JP5734437B2 - 太陽光発電装置及びその製造方法 - Google Patents

太陽光発電装置及びその製造方法 Download PDF

Info

Publication number
JP5734437B2
JP5734437B2 JP2013529041A JP2013529041A JP5734437B2 JP 5734437 B2 JP5734437 B2 JP 5734437B2 JP 2013529041 A JP2013529041 A JP 2013529041A JP 2013529041 A JP2013529041 A JP 2013529041A JP 5734437 B2 JP5734437 B2 JP 5734437B2
Authority
JP
Japan
Prior art keywords
rear electrode
region
power generation
protrusion
protrusions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013529041A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013537371A (ja
JP2013537371A5 (enExample
Inventor
ウー リー、ジン
ウー リー、ジン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of JP2013537371A publication Critical patent/JP2013537371A/ja
Publication of JP2013537371A5 publication Critical patent/JP2013537371A5/ja
Application granted granted Critical
Publication of JP5734437B2 publication Critical patent/JP5734437B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/10—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP2013529041A 2010-09-16 2011-04-27 太陽光発電装置及びその製造方法 Expired - Fee Related JP5734437B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2010-0091278 2010-09-16
KR1020100091278A KR101172195B1 (ko) 2010-09-16 2010-09-16 태양광 발전장치 및 이의 제조방법
PCT/KR2011/003123 WO2012036364A1 (ko) 2010-09-16 2011-04-27 태양광 발전장치 및 이의 제조방법

Publications (3)

Publication Number Publication Date
JP2013537371A JP2013537371A (ja) 2013-09-30
JP2013537371A5 JP2013537371A5 (enExample) 2014-06-19
JP5734437B2 true JP5734437B2 (ja) 2015-06-17

Family

ID=45831794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013529041A Expired - Fee Related JP5734437B2 (ja) 2010-09-16 2011-04-27 太陽光発電装置及びその製造方法

Country Status (6)

Country Link
US (1) US20130032205A1 (enExample)
EP (1) EP2618384A4 (enExample)
JP (1) JP5734437B2 (enExample)
KR (1) KR101172195B1 (enExample)
CN (1) CN103081124B (enExample)
WO (1) WO2012036364A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024247789A1 (ja) 2023-06-02 2024-12-05 パナソニックＩｐマネジメント株式会社 光電変換素子の製造方法および光電変換素子

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5997021B2 (ja) * 2012-11-28 2016-09-21 京セラ株式会社 光電変換装置およびその製造方法
US9437756B2 (en) 2013-09-27 2016-09-06 Sunpower Corporation Metallization of solar cells using metal foils
US9717401B1 (en) * 2016-02-01 2017-08-01 Jay S. Orringer, M.D., A Professional Corporation Wireless surgical headlight
JP7413833B2 (ja) 2020-02-27 2024-01-16 株式会社リコー 光電変換素子及び光電変換モジュール

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0693518B2 (ja) * 1984-04-05 1994-11-16 株式会社半導体エネルギー研究所 半導体装置作製方法
JP4064340B2 (ja) * 2003-12-25 2008-03-19 昭和シェル石油株式会社 集積型薄膜太陽電池の製造方法
JP4648105B2 (ja) * 2005-06-21 2011-03-09 三菱重工業株式会社 太陽電池モジュール及び太陽電池モジュールの製造方法
US20080029152A1 (en) * 2006-08-04 2008-02-07 Erel Milshtein Laser scribing apparatus, systems, and methods
JP4994061B2 (ja) 2007-03-08 2012-08-08 昭和シェル石油株式会社 集積構造の透光性ｃｉｓ系薄膜太陽電池モジュール及びその製造方法
WO2008149835A1 (ja) * 2007-06-04 2008-12-11 Kaneka Corporation 集積型薄膜太陽電池とその製造方法
KR101476122B1 (ko) * 2008-08-14 2014-12-24 주성엔지니어링(주) 박막형 태양전지의 제조방법 및 제조장치
CN101419989B (zh) * 2008-11-24 2010-12-22 李毅 圆形硅薄膜太阳能电池
JPWO2010071201A1 (ja) * 2008-12-19 2012-05-31 シャープ株式会社 膜除去方法、光電変換装置の製造方法、光電変換装置、および膜除去装置
JP2010165879A (ja) * 2009-01-16 2010-07-29 Fujifilm Corp スクライブ加工装置、及びスクライブ加工方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024247789A1 (ja) 2023-06-02 2024-12-05 パナソニックＩｐマネジメント株式会社 光電変換素子の製造方法および光電変換素子

Also Published As

Publication number Publication date
CN103081124A (zh) 2013-05-01
WO2012036364A1 (ko) 2012-03-22
CN103081124B (zh) 2015-09-09
JP2013537371A (ja) 2013-09-30
KR20120029281A (ko) 2012-03-26
EP2618384A4 (en) 2014-04-16
KR101172195B1 (ko) 2012-08-07
US20130032205A1 (en) 2013-02-07
EP2618384A1 (en) 2013-07-24

Similar Documents

Publication Publication Date Title
JP5881675B2 (ja) 太陽光発電装置及びその製造方法
JP2013508945A (ja) 太陽光発電装置及びその製造方法
JP2012522393A (ja) 太陽光発電装置及びその製造方法
KR100999797B1 (ko) 태양광 발전장치 및 이의 제조방법
JP2013506990A (ja) 太陽光発電装置及びその製造方法
JP2013506991A (ja) 太陽光発電装置及びその製造方法
JP5734437B2 (ja) 太陽光発電装置及びその製造方法
JP2013537364A (ja) 太陽光発電装置及びその製造方法
JP5840213B2 (ja) 太陽光発電装置及びその製造方法
KR101382880B1 (ko) 태양광 발전장치 및 이의 제조방법
JP2013532911A (ja) 太陽光発電装置及びその製造方法
KR101189432B1 (ko) 태양전지 및 이의 제조방법
KR101114079B1 (ko) 태양광 발전장치 및 이의 제조방법
JP5602234B2 (ja) 太陽光発電装置及びその製造方法
JP2013510427A (ja) 太陽電池及びその製造方法
JP6185840B2 (ja) 太陽光発電装置及びその製造方法
KR101055019B1 (ko) 태양광 발전장치 및 이의 제조방법
JP2014504033A (ja) 太陽電池及びその製造方法
JP2013536996A (ja) 太陽光発電装置及びその製造方法
KR101210164B1 (ko) 태양전지 및 이의 제조방법
KR101210104B1 (ko) 태양광 발전장치
KR101765922B1 (ko) 태양전지 및 이의 제조방법
KR101349525B1 (ko) 태양광 발전장치
KR101349432B1 (ko) 태양광 발전장치 및 이의 제조방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140428

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140428

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20141128

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20141202

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150302

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150407

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150414

R150 Certificate of patent or registration of utility model

Ref document number: 5734437

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees