KR101172195B1 - 태양광 발전장치 및 이의 제조방법 - Google Patents

태양광 발전장치 및 이의 제조방법 Download PDF

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Publication number
KR101172195B1
KR101172195B1 KR1020100091278A KR20100091278A KR101172195B1 KR 101172195 B1 KR101172195 B1 KR 101172195B1 KR 1020100091278 A KR1020100091278 A KR 1020100091278A KR 20100091278 A KR20100091278 A KR 20100091278A KR 101172195 B1 KR101172195 B1 KR 101172195B1
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KR
South Korea
Prior art keywords
electrode layer
protrusions
back electrode
substrate
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020100091278A
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English (en)
Korean (ko)
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KR20120029281A (ko
Inventor
이진우
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020100091278A priority Critical patent/KR101172195B1/ko
Priority to US13/641,332 priority patent/US20130032205A1/en
Priority to PCT/KR2011/003123 priority patent/WO2012036364A1/ko
Priority to JP2013529041A priority patent/JP5734437B2/ja
Priority to EP11825324.4A priority patent/EP2618384A4/en
Priority to CN201180042083.5A priority patent/CN103081124B/zh
Publication of KR20120029281A publication Critical patent/KR20120029281A/ko
Application granted granted Critical
Publication of KR101172195B1 publication Critical patent/KR101172195B1/ko
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/10—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)
KR1020100091278A 2010-09-16 2010-09-16 태양광 발전장치 및 이의 제조방법 Expired - Fee Related KR101172195B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020100091278A KR101172195B1 (ko) 2010-09-16 2010-09-16 태양광 발전장치 및 이의 제조방법
US13/641,332 US20130032205A1 (en) 2010-09-16 2011-04-27 Solar photovoltaic device and a production method therefor
PCT/KR2011/003123 WO2012036364A1 (ko) 2010-09-16 2011-04-27 태양광 발전장치 및 이의 제조방법
JP2013529041A JP5734437B2 (ja) 2010-09-16 2011-04-27 太陽光発電装置及びその製造方法
EP11825324.4A EP2618384A4 (en) 2010-09-16 2011-04-27 PHOTOVOLTAIC DEVICE AND MANUFACTURING METHOD THEREFOR
CN201180042083.5A CN103081124B (zh) 2010-09-16 2011-04-27 太阳能光伏装置及其生产方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100091278A KR101172195B1 (ko) 2010-09-16 2010-09-16 태양광 발전장치 및 이의 제조방법

Publications (2)

Publication Number Publication Date
KR20120029281A KR20120029281A (ko) 2012-03-26
KR101172195B1 true KR101172195B1 (ko) 2012-08-07

Family

ID=45831794

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100091278A Expired - Fee Related KR101172195B1 (ko) 2010-09-16 2010-09-16 태양광 발전장치 및 이의 제조방법

Country Status (6)

Country Link
US (1) US20130032205A1 (enExample)
EP (1) EP2618384A4 (enExample)
JP (1) JP5734437B2 (enExample)
KR (1) KR101172195B1 (enExample)
CN (1) CN103081124B (enExample)
WO (1) WO2012036364A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5997021B2 (ja) * 2012-11-28 2016-09-21 京セラ株式会社 光電変換装置およびその製造方法
US9437756B2 (en) 2013-09-27 2016-09-06 Sunpower Corporation Metallization of solar cells using metal foils
US9717401B1 (en) * 2016-02-01 2017-08-01 Jay S. Orringer, M.D., A Professional Corporation Wireless surgical headlight
JP7413833B2 (ja) 2020-02-27 2024-01-16 株式会社リコー 光電変換素子及び光電変換モジュール
WO2024247789A1 (ja) 2023-06-02 2024-12-05 パナソニックＩｐマネジメント株式会社 光電変換素子の製造方法および光電変換素子

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008226892A (ja) 2007-03-08 2008-09-25 Showa Shell Sekiyu Kk 集積構造の透光性ｃｉｓ系薄膜太陽電池モジュール及びその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0693518B2 (ja) * 1984-04-05 1994-11-16 株式会社半導体エネルギー研究所 半導体装置作製方法
JP4064340B2 (ja) * 2003-12-25 2008-03-19 昭和シェル石油株式会社 集積型薄膜太陽電池の製造方法
JP4648105B2 (ja) * 2005-06-21 2011-03-09 三菱重工業株式会社 太陽電池モジュール及び太陽電池モジュールの製造方法
US20080029152A1 (en) * 2006-08-04 2008-02-07 Erel Milshtein Laser scribing apparatus, systems, and methods
WO2008149835A1 (ja) * 2007-06-04 2008-12-11 Kaneka Corporation 集積型薄膜太陽電池とその製造方法
KR101476122B1 (ko) * 2008-08-14 2014-12-24 주성엔지니어링(주) 박막형 태양전지의 제조방법 및 제조장치
CN101419989B (zh) * 2008-11-24 2010-12-22 李毅 圆形硅薄膜太阳能电池
JPWO2010071201A1 (ja) * 2008-12-19 2012-05-31 シャープ株式会社 膜除去方法、光電変換装置の製造方法、光電変換装置、および膜除去装置
JP2010165879A (ja) * 2009-01-16 2010-07-29 Fujifilm Corp スクライブ加工装置、及びスクライブ加工方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008226892A (ja) 2007-03-08 2008-09-25 Showa Shell Sekiyu Kk 集積構造の透光性ｃｉｓ系薄膜太陽電池モジュール及びその製造方法

Also Published As

Publication number Publication date
CN103081124A (zh) 2013-05-01
WO2012036364A1 (ko) 2012-03-22
CN103081124B (zh) 2015-09-09
JP2013537371A (ja) 2013-09-30
KR20120029281A (ko) 2012-03-26
EP2618384A4 (en) 2014-04-16
US20130032205A1 (en) 2013-02-07
EP2618384A1 (en) 2013-07-24
JP5734437B2 (ja) 2015-06-17

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