JP5732466B2 - 複数のゾーンから成るガスクッション上に置かれている基板ホルダを備えるcvd反応炉 - Google Patents
複数のゾーンから成るガスクッション上に置かれている基板ホルダを備えるcvd反応炉 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 129
- 239000007789 gas Substances 0.000 claims description 232
- 238000000034 method Methods 0.000 claims description 38
- 239000000203 mixture Substances 0.000 claims description 34
- 230000008569 process Effects 0.000 claims description 34
- 238000002156 mixing Methods 0.000 claims description 19
- 230000004888 barrier function Effects 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 15
- 238000007789 sealing Methods 0.000 claims description 9
- 238000012546 transfer Methods 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 4
- 230000002401 inhibitory effect Effects 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000012986 modification Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Natural products P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Description
2 基板ホルダ
3 基板
4 支持ポケット
4‘ 支持ポケットの底面
5 入口
6 入口
7 供給ライン
8 供給ライン
9 ガス分配チャンネル
10 ガス分配チャンネル
11 ガス収集チャンネル
12 ガス収集チャンネル
13 排出ライン
14 排出ライン
15 拡散障壁(密封リング)
16 底環状溝
17 環状溝
18 密封ギャップ
19 ガスクッション
20 中心ピン
21 ガス注入口
22 カバー
23 プロセスチャンバー
24 ガス排出口
25 中央プレート
26 中央キャリア
27 ガス分配チャンバー
28 供給ライン
29 供給ライン
30 ヒーター
31 反応炉ハウジング
32 マスフローコントローラ
32‘ マスフローコントローラ
33 マスフローコントローラ
33‘ マスフローコントローラ
34 切替バルブ
34‘ 切替バルブ
35 ガス供給源
36 ガス供給源
37 ガス供給源
38 外側のライン
39 供給チャンネル
40 供給チャンネル
41 中心
42 接続チャンネル
43 接続チャンネル
44 圧力調整器
45 スルーフロー圧力調節器
A 外側の環状のゾーン
C 内側の同心のゾーン
a 温度プロファイル
b 温度プロファイル
c 温度プロファイル
d 温度プロファイル
Claims (11)
- プロセスチャンバー(23)と当該プロセスチャンバー(23)の中に位置する基板ホルダキャリア(1)とを備えるCVD反応炉であって、
前記基板ホルダキャリア(1)が少なくとも1つの支持面(4‘)を備え、複数のガス供給ライン(7、8)が当該支持面(4‘)に開き、
前記基板ホルダキャリア(1)が基板ホルダ(2)を備え、当該基板ホルダ(2)の裏面が前記支持面(4‘)に面し、
前記支持面(4‘)と前記基板ホルダ(2)の裏面との間の空間に前記ガス供給ライン(7、8)を通って供給されるガスが、前記基板ホルダ(2)を運ぶガスクッション(19)を形成し、
前記ガスクッション(19)が、各々関連する前記ガス供給ライン(7、8)を通って個別に供給されることができる複数のゾーン(A、C)を備え、
前記ゾーン(A、C)が、当該ゾーン(A、C)の間でガスの交換を抑制する手段によってお互いから分離されており、
ガス排出ライン(13)が少なくとも内側のゾーン(C)と関連し、当該ガス排出ライン(13)を通って、前記内側のゾーン(C)に前記ガス供給ライン(7)を通って供給されるガスを排出することができる、
ことを特徴とするCVD反応炉。 - 前記ゾーン(A、C)の間でガスの交換を抑制する手段が、前記基板ホルダ(2)の回転の中心を環状に囲む拡散障壁を形成することを特徴とする請求項1に記載のCVD反応炉。
- 前記拡散障壁が、前記基板ホルダキャリア(1)の表面、特に前記支持面(4‘)の上に突き出ており、特に底環状溝(16)に挿入される密封リング(15)であり、
前記密封リング(15)が、前記2つのゾーン(A、C)のガスクッションの間に何回も方向を変えるギャップのみが残るように、対向する面、特に前記基板ホルダ(2)の裏面に位置する環状溝(17)に係合する、
ことを特徴とする請求項2に記載のCVD反応炉。 - いずれの場合にも前記ガス排出ライン(13)が複数の前記内側のゾーン(C)と関連することを特徴とする請求項1ないし3のいずれか1項に記載のCVD反応炉。
- 前記ガス排出ライン(13)が特に半径方向に外側に配置されたガス収集チャンネル(11)とつながっており、当該ガス収集チャンネル(11)が前記ゾーン(C)の端に沿って円周方向に延びることを特徴とする請求項1ないし4のいずれか1項に記載のCVD反応炉。
- 前記ガス供給ライン(7)が供給チャンネル(40)とつながっており、当該供給チャンネル(40)が特に半径方向に内側に位置するように前記ゾーン(C)の中心の周りに延びることを特徴とする請求項1ないし5のいずれか1項に記載のCVD反応炉。
- 前記基板ホルダ(2)が、前記基板ホルダキャリア(1)の支持ポケット(4)に包み込まれ、
前記支持ポケット(4)の底面(4‘)が、前記支持面を形成し、
前記基板ホルダ(2)の裏面が、前記支持ポケット(4)の底面(4‘)と並行であり、
基板(3)が、前記基板ホルダ(2)上で前記プロセスチャンバー(23)のカバー(22)の方向に上方に面する前記基板ホルダ(2)の表面に配置されることができ、
前記支持ポケット(4)の底面(4‘)が、供給チャンネル(39、40)と、当該供給チャンネル(39、40)とつながっており、特にらせん状であるガス分配チャンネル(9、10)とを備え、
ガス排出ライン(14)が外側のゾーン(A)と関連し、当該ガス排出ライン(14)を通って、前記外側のゾーン(A)に前記ガス供給ライン(8)を通って供給されるガスを排出することができ、
前記ガス分配チャンネル(9、10)が、前記ガス排出ライン(13、14)とつながるガス収集チャンネル(11、12)によって囲まれる、
ことを特徴とする請求項1ないし4のいずれか1項に記載のCVD反応炉。 - 多数の支持ポケット(4)が前記基板ホルダキャリア(1)の中心の周りに円形に配置され、当該各支持ポケット(4)は前記基板ホルダ(2)を収容することができ、
前記各基板ホルダ(2)は前記複数のゾーン(A、C)を持つ前記ガスクッション(19)によって運ばれ、
ガス排出ライン(14)が外側のゾーン(A)と関連し、当該ガス排出ライン(14)を通って、前記外側のゾーン(A)に前記ガス供給ライン(8)を通って供給されるガスを排出することができ、
前記ガス供給ライン(7、8)が個々の前記ゾーン(A、C)のために与えられ、前記ガス供給ライン(7、8)はガス供給デバイスに個別に接続されるか、または共通のガス供給デバイスに接続される、
ことを特徴とする請求項1ないし6のいずれか1項に記載のCVD反応炉。 - 下から加熱され、動的なガスクッション(19)で運ばれ、特に回転駆動される基板ホルダ(2)の表面温度の制御方法であって、
前記ガスクッション(19)が、特にお互いに関して同軸上に配置された複数のゾーン(A、C)を持ち、
前記複数のゾーン(A、C)の中にお互いに異なる熱伝導特性を持つガス(35、36、37)またはガス混合物が供給され、当該熱伝導特性は特に前記ガス混合物を変えることによって調節することができる、
ことを特徴とする基板ホルダの表面温度の制御方法。 - プロセスチャンバー(23)と当該プロセスチャンバー(23)の中に配置された基板ホルダキャリア(1)とを持つCVD反応炉を備える基板処理装置であって、
前記基板ホルダキャリア(1)が、前記プロセスチャンバー(23)に面する表面上の支持面(4‘)で基板ホルダ(2)を運び、ヒーター(30)によって裏面から加熱されることができ、
ガス供給ライン(7、8)が、前記支持面(4‘)に開き、
前記ガス供給ライン(7、8)が、ガス混合システムによって前記基板ホルダ(2)を運ぶ動的なガスクッション(19)を形成するガスを供給され、
前記ガスクッション(19)がお互いに隣接する複数のゾーン(A、C)を備え、当該複数のゾーン(A、C)が個々の前記ガス供給ライン(7、8)を通って前記ガス混合システムから供給され、
前記ガス混合システムが、お互いに異なるガス、またはガス混合物を前記個々のガス供給ライン(7、8)に対して供給することができるガス流制御エレメント(32、33、34)を備える、
ことを特徴とする基板処理装置。 - 前記ガス混合システムが、第1のガスのための第1のガス供給源(35)と第2のガスのための第2のガス供給源(36)とを備え、
前記ガスの組成の調節によって各前記ゾーン(A、C)における前記ガスクッション(19)の熱伝導特性を個別に調節するために、お互いに異なる熱伝導特性を持つ2つのガスが前記ガス流制御エレメント(32、33、34)によって個別に混合されることができる、
ことを特徴とする請求項10に記載の基板処理装置。
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DE102009044276A DE102009044276A1 (de) | 2009-10-16 | 2009-10-16 | CVD-Reaktor mit auf einem mehrere Zonen aufweisenden Gaspolster liegenden Substrathalter |
DE102009044276.6 | 2009-10-16 | ||
PCT/EP2010/065105 WO2011045241A1 (de) | 2009-10-16 | 2010-10-08 | Cvd-reaktor mit auf einem mehrere zonen aufweisenden gaspolster liegenden substrathalter |
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