CN104835763B - 一种花瓣形表面结构的可控温加热盘 - Google Patents

一种花瓣形表面结构的可控温加热盘 Download PDF

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CN104835763B
CN104835763B CN201510209103.3A CN201510209103A CN104835763B CN 104835763 B CN104835763 B CN 104835763B CN 201510209103 A CN201510209103 A CN 201510209103A CN 104835763 B CN104835763 B CN 104835763B
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heating dish
heat
heating
center
wafer
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CN104835763A (zh
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陈英男
姜崴
郑旭东
关帅
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Piotech Inc
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Piotech Shenyang Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks

Abstract

一种花瓣形表面结构的可控温加热盘,主要解决现有的加热盘及静电卡盘所存在的无法快速、准确控制晶圆温度的问题。它包括中心设有进气孔的加热盘。所述加热盘的表面制有花瓣形布局的气体流动径向沟槽,在加热盘中心的一个圆形空间设有中心稳流区。所述加热盘设计有圆形空间边缘稳流区及设有的气体回收孔。所述的加热盘外圆的沟槽设计成开放式或封闭式。本发明通过合理化设计的表面气体分布结构,使得导热介质能够直接、快速、均匀的分布在加热盘与晶圆之间,并依据介质流动所带来的压力及流速变化规律确定各个区域大小或沟槽尺寸,来调节导热介质所带走的热量,以实现对晶圆温度的快速准确控制。可广泛应用于半导体薄膜沉积应用技术领域。

Description

一种花瓣形表面结构的可控温加热盘
技术领域
本发明涉及一种应用于半导体沉积设备的可控温加热盘的盘面结构。使用花瓣形盘面气体分布形式,以实现对晶圆温度的精确控制。属于半导体薄膜沉积应用及制造技术领域。
背景技术
半导体设备在沉积反应时往往需要使晶圆及腔室空间预热或维持在沉积反应所需要的温度,大多数半导体沉积设备都会使用加热盘或静电卡盘来实现对晶圆预热的目的。但因为沉积反应多是在真空条件下进行,真空环境因缺乏导热介质,热传导性能较差。往往无法快速将晶圆预热到所需温度,或是在沉积反应前无法均匀的将晶圆预热。在有射频参与的半导体镀膜设备中,当射频所激发的能量到达晶圆表面时,因为热传导介质的缺乏,往往又会使晶圆表面的温度快速升高,使得晶圆表面温度超出沉积所需温度,而使晶圆发生损坏。随着晶圆尺寸的逐渐增大,晶圆本身的温度均匀性直接决定着晶圆品质的好或坏,快速、准确的控温对生产效率的提高及产品良率的提高都是至关重要的。
现有的半导体沉积设备加热盘及静电卡盘大都只具有加热盘自身的温度调节及控温功能,对于晶圆的温度是无法达到精确控制的。然而沉积反应所最急需的确是对晶圆温度的快速、准确控制。只有将晶圆的温度快速、准确的维持在沉积反应所需的温度范围内,才能实现对产品良率及效率的提升。
发明内容
本发明以解决上述问题为目的,主要解决现有的加热盘及静电卡盘所存在的无法快速、准确控制晶圆温度的问题。本发明通过进气通道在加热盘表面与晶圆间形成一定的气隙,并在其中通入热传导效果较好的导热气体作为传热介质,经加热盘的温度快速的传到到晶圆,或是将晶圆的温度迅速的传到至加热盘上导出。通过合理的盘面结构设计,使得导热介质能够快速均匀的在空隙中流动,及时实现加热盘及晶圆的热交换。
为实现上述目的,本发明采用下述技术方案:一种花瓣形表面结构的可控温加热盘,采用在加热盘表面设计一种花瓣形的沟槽形式,中间作为气体导入的入口,有一个圆形空间用来释放气体进入时压力及将其通过多条径向沟槽将中间进入的导热介质输送到加热盘的边缘区域,因导热介质在流动过程中会因压力损失而使流速降低,故在加热盘边缘设计圆形空间作为气体滞留及缓存区,使得中心与边缘带走的热量相同,以精确控制晶圆温度。气体最终会在缓存区的气体回收孔中从加热盘内部返回至导热介质冷却装置,并在其中实现冷却,以便将多余的热量带走。冷却后的气体会再次从加热盘中心流入,以实现导热介质的循环流动。也可将加热盘外圆的滞留区设计成开放式,使导热介质直接扩散至腔室空间而不收集介质重新进行循环
本发明的有益效果及特点:
通过一种花瓣形表面结构的沟槽,在加热盘及晶圆之间形成一定的气隙空间,并在该气隙空间中通入热传导系数较高的导热介质,用以加强真空环境下的热传导效率。通过合理化设计的表面气体分布结构,使得导热介质能够直接、快速、均匀的分布在加热盘与晶圆之间,并依据介质流动所带来的压力及流速变化规律确定各个区域大小或沟槽尺寸,来调节导热介质所带走的热量,以实现对晶圆温度的快速准确控制。进一步提高晶圆的成品率及半导体沉积设备的生产效率。
附图说明
图1是本发明的结构示意图。
图中零件标号分别代表:
1、进气孔;2、中心稳流区;3、径向沟槽;4、边缘稳流区;5、气体回收孔;6、加热盘。
下面结合附图和实施例对本发明作进一步的说明。
具体实施方式
实施例
如图1所示,一种花瓣形表面结构的可控温加热盘,包括中心设有进气孔1的加热盘6。所述加热盘6的表面制有花瓣形布局的气体流动径向沟槽3,在加热盘6中心的一个圆形空间设有中心稳流区2;所述加热盘6的边缘设计有圆形空间边缘稳流区4及设有的气体回收孔5。
工作原理:热传导介质从加热盘6中心的进气孔1进入加热盘6表面的花瓣形布局的气体流动到径向沟槽3。上述的热传导介质通过多条径向沟槽3从加热盘6中间流动到加热盘6的边缘区域,在加热盘边缘设计有圆形空间边缘稳流区4作为气体滞留及缓存区,消除导热介质在流动过程中因压力损失而产生流速降低现象,使得中心与边缘带走的热量相同,以精确控制晶圆温度。气体最终会在加热盘6边缘的气体回收孔5中从加热盘6内部返回至导热介质冷却装置,并在其中实现冷却,以便将多余的热量带走。冷却后的气体会再次从加热盘中心流入,以实现导热介质的循环流动。
上述的加热盘外圆的沟槽设计成开放式或封闭式,使导热介质直接扩散至腔室空间而不收集介质重新进行循环。

Claims (1)

1.一种花瓣形表面结构的可控温加热盘,其特征在于:它包括中心设有进气孔的加热盘,所述加热盘的表面制有花瓣形布局的气体流动径向沟槽,在加热盘中心的一个圆形空间设有中心稳流区;所述加热盘的边缘设计有圆形空间边缘稳流区及设有的气体回收孔,所述的加热盘外圆的沟槽设计成开放式或封闭式。
CN201510209103.3A 2015-04-27 2015-04-27 一种花瓣形表面结构的可控温加热盘 Active CN104835763B (zh)

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CN109962030B (zh) * 2017-12-22 2022-03-29 中微半导体设备(上海)股份有限公司 一种静电吸盘
CN114318304B (zh) * 2021-12-27 2023-11-24 拓荆科技股份有限公司 一种加热盘结构

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