WO2021238955A1 - 一种加热装置及半导体加工设备 - Google Patents

一种加热装置及半导体加工设备 Download PDF

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Publication number
WO2021238955A1
WO2021238955A1 PCT/CN2021/095934 CN2021095934W WO2021238955A1 WO 2021238955 A1 WO2021238955 A1 WO 2021238955A1 CN 2021095934 W CN2021095934 W CN 2021095934W WO 2021238955 A1 WO2021238955 A1 WO 2021238955A1
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Prior art keywords
heating
channel
gas
ring
sub
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PCT/CN2021/095934
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English (en)
French (fr)
Inventor
田西强
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北京北方华创微电子装备有限公司
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Priority to EP21812127.5A priority Critical patent/EP4159890A1/en
Priority to KR1020227038984A priority patent/KR20220164589A/ko
Priority to US17/999,914 priority patent/US20230230858A1/en
Priority to JP2022572698A priority patent/JP2023528000A/ja
Publication of WO2021238955A1 publication Critical patent/WO2021238955A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Definitions

  • the present invention relates to the technical field of semiconductor manufacturing, in particular to a heating device and semiconductor processing equipment.
  • Chemical Vapor Deposition (Chemical Vapor Deposition, hereinafter referred to as CVD) process uses various energy sources such as heating or plasma to cause chemical reactions between experimental substances or chemical reactions with corresponding gases in the reactor through chemical reactions.
  • the technology of generating another gaseous compound, and then through physical carrier or chemical migration, this gaseous compound will be transported to the corresponding area with a different temperature from the source area of the reactant material for deposition to form a solid deposit.
  • the wafer 10 is usually placed on a heater 20 as shown in FIG. , And the vacuum suction hole is in communication with the vacuum pipeline 22, and the wafer 10 can be adsorbed on the heating plate 21 through the vacuum suction hole.
  • the air pressure in the reaction chamber is generally greater than the air pressure in the vacuum line 22
  • the air pressure in the edge area between the wafer 10 and the heating plate 21 is relatively large, and the wafer 10 and the The air pressure in the middle area between the heating plates 21 is relatively small, which causes the heat transfer gas between the wafer 10 and the heating plate 21 to have a higher air pressure in the edge area of the wafer 10, and the air pressure in the middle area of the wafer 10 is lower.
  • the temperature of the edge area of the wafer is high and the temperature of the middle area is low.
  • the temperature of the middle area of the wafer 10 has not yet reached the process temperature.
  • Temperature has a greater influence on the film formation rate of wafer 10.
  • the higher the temperature the faster the film formation rate, which causes the film thickness at the edge area of the wafer 10 to be greater than the film thickness in the middle area, resulting in different areas of the same wafer 10
  • the different film thicknesses result in poor film formation uniformity of the wafer 10.
  • the invention discloses a heating device and semiconductor processing equipment, which can solve the problem of poor film uniformity of wafers.
  • the present invention adopts the following technical solutions:
  • the embodiment of the present invention discloses a heating device for carrying and heating a workpiece to be processed in a semiconductor processing equipment.
  • the heating device includes a base, a heating component and a cooling mechanism, wherein:
  • the heating component is provided with a first gas passage, and the outlet of the first gas passage is located at the edge area of the heating surface of the heating component, and the inlet of the first gas passage is located at the side of the heating component away from the heating
  • the surface of the surface, the first gas channel is used to blow air to the edge of the workpiece to be processed
  • the base portion is arranged on a side of the heating element away from the heating surface, and the base portion and the heating element form an installation space between each other, and the cooling mechanism is arranged in the installation space and is located The position corresponding to the edge area of the heating surface is used to cool the heating component.
  • the cooling mechanism includes an annular component in which at least one of a cooling water channel for conveying cooling liquid and a cooling air channel for conveying cooling gas is integrated; wherein, the cooling air channel The outlet of is opposite to the surface of the heating component facing away from the heating surface, and is used to blow the cooling gas toward the surface.
  • a cooling water channel for conveying cooling liquid and a cooling air channel for conveying cooling gas are integrated in the ring assembly;
  • the ring assembly includes a ring body, a first ring cover plate, and a second ring A ring-shaped cover plate, wherein a ring-shaped groove is formed on a first surface of the ring-shaped main body opposite to the surface of the heating element that faces away from the heating surface, and the first ring-shaped cover plate and the ring
  • the shaped main body is connected in a sealed manner, and forms the closed cooling water channel with the annular groove;
  • a plurality of blowing holes are provided in the ring-shaped body, and the outlet of each blowing hole is located on the first surface, and the inlet of each blowing hole is located at the back of the ring-shaped body away from the first surface.
  • the second ring-shaped cover plate is connected to the ring-shaped body in a sealing manner on the side where the second surface of the ring-shaped body is located, and the second ring-shaped cover plate is connected to the
  • the ring-shaped body constitutes a closed ring-shaped air passage, and the ring-shaped air passage is communicated with the inlet of each of the air outlets.
  • a plurality of the blowing holes are distributed on the inner and outer sides of the cooling water channel, and the blowing holes on the same side are distributed at intervals along the circumferential direction of the annular body.
  • a heating part is further integrated in the ring assembly, and the heating part is used to heat at least one of the cooling water channel and the cooling air channel integrated in the ring assembly.
  • the heating part is a heating tube embedded in the annular component, and the heating tube is wound in a plane spiral around the axis of the annular component.
  • the cooling mechanism is in contact with a surface of the heating assembly that faces away from the heating surface; or, the cooling mechanism is arranged at a distance from the surface of the heating assembly that faces away from the heating surface, and is located on the surface of the heating assembly.
  • the cooling mechanism and the surface of the heating assembly away from the heating surface are provided with heat conducting parts respectively in contact with the two.
  • the heating assembly includes a heating body, an air passage plate disposed on a side of the heating body away from the heating surface, and an air source channel, wherein the air passage plate and the heating body are A second gas passage is formed, the second gas passage is in communication with the inlet of the first gas passage, and the second gas passage is also in communication with the gas source passage.
  • the second gas channel includes a first sub channel and a second sub channel, wherein the first sub channel is in communication with the first gas channel and is in communication with the second sub channel; the The second sub-channel is in communication with the air source channel;
  • the gas storage volume of the second subchannel and the gas storage volume of the first gas channel are both smaller than the gas storage volume of the first subchannel, and the flow rate of the second subchannel is greater than that of the first subchannel. The flow rate of the gas channel.
  • the first sub-channel is an annular channel; the second sub-channels are multiple, and the multiple second sub-channels are spaced apart along the circumferential direction of the annular channel, and each of the second sub-channels
  • the sub-channels are all straight channels extending along the radial direction of the annular channel, one end of the straight channel is communicated with the annular channel, and the other end of the straight channel is communicated with the air source channel.
  • the second gas passage is a groove opened on at least one of the two opposite surfaces of the gas passage plate and the heating body.
  • an installation groove is formed on the surface of the base opposite to the air passage plate, the installation groove and the air passage plate form the installation space, and the cooling mechanism is arranged in a groove of the installation groove A high temperature resistant part is provided between the cooling mechanism and the groove bottom.
  • a support is provided in the installation space, and the support is supported between the cooling mechanism and the bottom of the installation groove.
  • the heating assembly further includes an edge ring surrounding the heating body;
  • the first gas channel includes a third sub-channel and a fourth sub-channel, wherein the third sub-channel is arranged at the In the heating body, and the outlet of the third sub-channel is located on the outer peripheral wall of the heating body; the inlet of the third sub-channel is located on the surface of the heating body away from the heating surface, and is connected to The first sub-channel is connected;
  • the inner peripheral wall of the edge ring and the outer peripheral wall of the heating body are spaced apart to form the fourth sub-channel, and the fourth sub-channel is in communication with the third sub-channel.
  • a cooling channel for conveying a cooling medium is provided in the edge ring.
  • the embodiment of the present invention also discloses a semiconductor processing equipment, including a reaction chamber, and the above-mentioned heating device is arranged in the reaction chamber.
  • a venting structure is provided in the heating assembly.
  • the venting structure is used to blow the edge of the workpiece to be processed.
  • the blown gas can take away the heat from the edge of the workpiece to be processed, and at the same time .
  • the base and the heating component form an installation space between each other, and the cooling mechanism is arranged in the installation space and located at a position corresponding to the edge area of the heating surface for cooling the heating component.
  • the cooling mechanism can cool the edge area of the heating assembly, so that the heat conduction gas between the workpiece to be processed and the heating assembly can be evenly distributed, preventing the workpiece from being processed
  • the air pressure of the heat-conducting gas between the heat-conducting gas and the heating assembly at the edge of the workpiece to be processed is relatively large, while the air pressure in the middle area of the workpiece to be processed is relatively small.
  • the edge area of the heating component is cooled by the cooling mechanism, which can also make the edge temperature of the workpiece to be processed and the temperature of the middle area as much as possible during the heating process of the workpiece to be processed, and prevent the temperature of the edge of the workpiece to be processed from reaching the process temperature.
  • the temperature in the middle area of the workpiece to be processed has not yet reached the process temperature, so that the temperature distribution of the workpiece to be processed is relatively uniform, avoiding the difference in film thickness of different areas of the same workpiece to be processed, and thereby improving the uniformity of film formation of the workpiece to be processed.
  • Figure 1 is a schematic structural diagram of a typical heater in the prior art
  • FIG. 2 is a schematic diagram of the structure of the heating device disclosed in the embodiment of the present invention.
  • FIG. 3 is a schematic diagram of the structure of the cooling mechanism disclosed in the embodiment of the present invention.
  • Fig. 4 is a schematic structural diagram of a heating device disclosed in another embodiment of the present invention.
  • first and second in the specification and claims of this application are used to distinguish similar objects, but not to describe a specific sequence or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present application can be implemented in a sequence other than those illustrated or described herein.
  • the objects distinguished by “first”, “second”, etc. are generally of one type, and the number of objects is not limited. For example, there may be one or more first objects.
  • “and/or” in the description and claims means at least one of the connected objects, and the character “/” generally means that the associated objects before and after are in an "or” relationship.
  • the embodiment of the present invention discloses a heating device.
  • the disclosed heating device is used to carry and heat a workpiece 100 to be processed in a semiconductor processing equipment.
  • the workpiece 100 to be processed may generally be a wafer.
  • semiconductor processing equipment usually includes a reaction chamber.
  • the heating device is located in the reaction chamber. During wafer processing, the wafer is placed on the heating device. The heating device heats the wafer. When the process temperature is reached, the coating process of the wafer is performed to realize the processing of the wafer.
  • the disclosed heating device includes a base 200, a heating assembly, and a cooling mechanism 400, wherein: the heating assembly has a heating surface for carrying a workpiece 100 to be processed, and the heating assembly is provided with a venting structure for the workpiece to be processed Blow at the edge of 100.
  • the heating assembly can have a variety of structures.
  • the heating assembly includes a heating body 300, an air passage plate 500 arranged on the side of the heating body 300 away from the heating surface, and a gas source ( Figure (Not shown in) connected to the air source channel 900, wherein the heating body 300 is in the shape of a disk, and is used to place and heat the workpiece 100 to be processed.
  • the heating body 300 is provided with a heating tube which can generate heat and heat the heating body 300 so as to transfer the heat to the workpiece 100 to be processed through the heating body 300.
  • the above-mentioned ventilation structure includes, for example, a first gas channel 310 and a second gas channel 600, wherein the outlet of the first gas channel 310 is located at the edge of the heating surface of the heating body 300 (ie, the surface of the heating body 300 facing upward in FIG. 2) Area, the entrance of the first gas channel 310 is located on the surface of the heating body 300 away from the heating surface (ie, the surface of the heating body 300 facing downward in FIG.
  • the second gas passage 600 is located between the gas passage plate 500 and the heating body 300, and the second gas passage 600 communicates with the inlet of the first gas passage 310, and the second gas passage 600 is also communicated with the aforementioned gas source passage.
  • the gas provided by the gas source sequentially flows from the gas source channel 900, the second gas channel 600, and the first gas channel 310 to the edge of the workpiece 100 to be processed.
  • the above-mentioned second gas passage 600 is a groove opened on at least one of the two opposite surfaces of the gas passage plate 500 and the heating body 300, and the gas passage plate 500 and the heating body 300 are grooves.
  • the second gas channel 600 can be formed after being connected, and the method of forming the second gas channel 600 is not limited in the embodiment of the present invention.
  • the outlet of the first gas passage 310 is located at the edge area of the heating surface of the heating body 300, so that the first gas passage 310 can blow the edge of the workpiece 100 to be processed, and the blown gas can Take away the heat from the edge of the workpiece 100 to be processed.
  • the second gas passage 600 may include a first sub-channel 610 and a second sub-channel 610.
  • Two sub-channels 620 wherein the first sub-channel 610 communicates with the above-mentioned first gas channel 310 and the second sub-channel 620; the second sub-channel 620 communicates with the above-mentioned gas source channel 900.
  • the gas flowing out of the gas source channel 900 flows into the first gas channel 310 via the second sub channel 620 and the first sub channel 610 in sequence.
  • the gas storage volume of the second sub-channel 620 and the gas storage volume of the first gas channel 310 are both smaller than the gas storage volume of the first sub-channel 610, and the flow rate of the second sub-channel 620 is greater than that of the first gas channel 310
  • the flow rate of the gas is concentrated in the first sub-channel 610 to achieve the effect of holding pressure, thereby increasing the flow rate of the gas in the first gas channel 310.
  • the gas with a faster flow rate can take away more of the outer edge area of the heating body 300 The heat, so that the gas with a faster flow rate can better cool the outer edge area of the heating body 300 when it flows through the first gas channel 310.
  • the first sub-channel 610 is an annular channel; there are multiple second sub-channels 620, and the multiple second sub-channels 620 are spaced apart along the circumferential direction of the above-mentioned annular channel, and each second sub-channel 620
  • the sub-channels 620 are all straight channels extending along the radial direction of the annular channel, one end of the straight channel is connected with the annular channel, and the other end of the straight channel is connected with the above-mentioned gas source channel 900. In this way, the gas flowing out of the gas source channel 900 can flow uniformly to the above-mentioned annular channel via a plurality of straight channels at the same time, so that the uniformity of the gas distribution can be improved.
  • the first sub-channel 610 and the second sub-channel 620 may be formed in a variety of ways.
  • the first sub-channel 610 and the second sub-channel 620 are not limited.
  • the above-mentioned annular channel (ie, the first sub-channel 610) and the plurality of straight channels (ie, the second sub-channel 620) are respectively opened on at least one of the two opposite surfaces of the air channel plate 500 and the heating body 300.
  • the ring groove and multiple connecting grooves are respectively opened on at least one of the two opposite surfaces of the air channel plate 500 and the heating body 300.
  • the heating assembly further includes an edge ring 301 surrounding the heating body 300.
  • the above-mentioned first gas channel 310 includes a third sub-channel 310b and a fourth sub-channel 310a, wherein the third sub-channel 310b is arranged in the heating body 300, and the outlet of the third sub-channel 310b is located on the outer peripheral wall of the heating body 300;
  • the entrance of the third sub-channel 310b is located on the surface of the heating body 300 that faces away from the heating surface and communicates with the first sub-channel 610; and the inner peripheral wall of the edge ring 301 is spaced from the outer peripheral wall of the heating body 300 to form the aforementioned
  • the fourth sub-channel 310a, the fourth sub-channel 310a and the third sub-channel 310b are in communication.
  • a groove is provided in one of the inner peripheral wall of the edge ring 301 and the outer peripheral wall of the heating body 300, and the fourth sub-channel 310a can be formed after the edge ring 301 and the heating body 300 are connected.
  • the fourth sub-channel 310a There is no restriction on the formation of the fourth sub-channel 310a.
  • the other structures and functions of the edge ring 301 and the heating body 300 are all known technologies, and for the sake of brevity of the text, they will not be repeated here.
  • the edge ring 301 is provided with a cooling channel 320 for conveying a cooling medium.
  • the cooling medium is, for example, cooling gas or cooling water.
  • the cooling gas or cooling water in the cooling channel 320 can take away the heat from the edge of the heating body 300, so that the temperature of the edge of the heating body 300 is lower.
  • the heat-conducting gas between the workpiece 100 to be processed and the heating body 300 can be evenly distributed, preventing the heat-conducting gas between the workpiece 100 to be processed and the heating body 300 from being at the edge of the workpiece 100 to be processed
  • the air pressure is higher, and the air pressure in the middle area of the workpiece 100 to be processed is lower, so that the heating body 300 can uniformly heat the workpiece 100 to be processed, so that the edge temperature of the workpiece 100 to be processed and the temperature in the middle area are as same as possible, thereby making
  • the temperature distribution of the workpiece 100 to be processed is relatively uniform, which avoids the difference in film thickness in different regions of the same workpiece 100 to be processed, thereby making the uniformity of the film formation of the workpiece 100 to be processed better.
  • the cooling channel 320 is an annular water channel, which can surround the heating body 300, so that the heat at the edge of the heating body 300 can be more taken away by the cooling gas or cooling water in the cooling channel 320, and the cooling is further improved.
  • the cooling effect of the channel 320 on the edge of the heating body 300 further improves the uniformity of film formation in different regions of the workpiece 100 to be processed.
  • the cooling mechanism 400 can cool the edge area of the heating assembly, so that the heat conduction gas between the workpiece 100 to be processed and the heating assembly can be evenly distributed. It is prevented that the air pressure of the heat-conducting gas between the workpiece 100 to be processed and the heating assembly at the edge of the workpiece 100 to be processed is relatively large, and the pressure in the middle area of the workpiece 100 to be processed is relatively small.
  • the edge area of the heating assembly is cooled by the cooling mechanism 400, and the edge temperature of the workpiece 100 to be processed can be made the same as possible with the temperature of the middle area during the heating process of the workpiece 100 to be processed, so as to prevent the temperature of the edge of the workpiece 100 to be processed from reaching At the process temperature, the temperature in the middle area of the workpiece 100 to be processed has not yet reached the process temperature, so that the temperature distribution of the workpiece 100 to be processed is more uniform, avoiding the difference in film thickness in different regions of the same workpiece to be processed, thereby improving the quality of the workpiece to be processed Film uniformity.
  • the cooling mechanism 400 can absorb heat during operation and play a role in cooling and heating the body 300.
  • the air passage plate 500 is provided with a plurality of air passages, some of which are used to blow the edge of the workpiece 100 to be processed, to prevent back plating or side plating of the workpiece 100 to be processed, and to improve the yield rate of the workpiece 100 to be processed. Part of the air passage is used to form a negative pressure in the heating device, so that the heating device absorbs the workpiece 100 to be processed.
  • the above-mentioned cooling mechanism 400 includes an annular component, as shown in FIG. At least one of the passages 410; wherein the outlet of the cooling air passage 410 is opposite to the surface of the heating element facing away from the heating surface, and is used to blow cooling gas toward the surface.
  • the ring assembly may have various structures.
  • the ring assembly integrates a cooling cooling water channel 430 for conveying cooling liquid and a cooling air channel 410 for conveying cooling gas.
  • the ring assembly includes a ring body 401, a first ring cover plate 402, and a second ring cover plate 403, wherein the ring body 401 has a first surface ( That is, an annular groove is formed on the upward surface of the annular body 401, and the first annular cover plate 402 is sealed to the annular body 401, and forms a closed cooling water channel 430 with the annular groove. Cooling water can be passed into the cooling water channel 430.
  • the cooling water in the cooling water channel 430 can take away the heat conducted from the outer edge area of the air channel plate 500 to the cooling mechanism 400, so that the cooling mechanism 400 can take away the heat in the outer edge area of the air channel plate 500.
  • Heat thereby realizing the effect of cooling the outer edge area of the air duct plate 500, and further realizing the effect of cooling and heating the edge of the body 300.
  • this water cooling method has a better cooling effect, so that the cooling mechanism 400 can better cool the outer edge area of the air passage plate 500, and thus can make the temperature distribution of the workpiece 100 to be processed more Uniformity, so that the uniformity of the film formation of the workpiece 100 to be processed is better.
  • the ring body 401 is also provided with a plurality of blowing holes 410b, and the outlet of each blowing hole 410b is located on the above-mentioned first surface of the ring body 401, and the inlet of each blowing hole 410b is located at The second surface of the ring body 401 facing away from the first surface (the surface of the ring body 401 facing downward); the second ring cover 403 is on the side of the ring body 401 where the second surface is located 401 is connected in a sealed manner, and the second annular cover 403 and the annular main body 401 constitute a closed annular air passage 410a, which serves as the communication between the annular air passage 410a and the inlet of each blowing hole 410b.
  • the cooling gas can flow through the annular air passage 410a to each blow hole 410b in turn, and blow to the outer edge area of the air passage plate 500 through the outlet of the blow hole 410b, so that the cooling gas takes away the heat in the outer edge area of the air passage plate 500. In this way, the effect of cooling the outer edge area of the air duct plate 500 is achieved.
  • This setting method is simple and reliable, which is convenient for designers to design the cooling mechanism 400 and reduces the design difficulty of the cooling mechanism 400.
  • the cooling gas is more difficult to affect the environment and cool The cost of gas is lower.
  • the above-mentioned multiple blowing holes 410b are distributed on the inner and outer sides of the cooling water channel 430, and the blowing holes 410b on the same side are arranged in a ring shape.
  • the main body 401 is distributed at intervals in the circumferential direction.
  • a cooling water channel 430 and a cooling air channel 410 are integrated in the ring assembly, so that the outer edge area of the air channel plate 500 can be cooled by the cooling gas, and the air channel can be cooled by the cooling water.
  • the cooling water in the cooling water channel 430 can also cool the cooling gas in the cooling air channel 410, so that the cooling mechanism 400 has a better cooling effect on the outer edge area of the air channel plate 500, thereby cooling
  • the mechanism 400 can further cool the edge of the heating body 300 to make the temperature distribution of the workpiece 100 to be processed more uniform.
  • only one of the cooling water channel 430 and the cooling air channel 410 may be provided.
  • the temperature of the cooling gas or cooling water may be too low, causing the cooling mechanism 400 to over-cool the edge of the heating body 300, resulting in a lower temperature at the edge of the workpiece 100 to be processed ,
  • the temperature in the middle region of the workpiece 100 to be processed is relatively high, resulting in uneven temperature distribution of the workpiece 100 to be processed, which in turn leads to different film thicknesses in different regions of the same workpiece 100 to be processed.
  • a heating part 440 is also integrated in the above-mentioned annular assembly, and the heating part 440 is used to connect at least one of the cooling water channel 430 and the cooling air channel 410 integrated in the above-mentioned annular assembly.
  • One is heated.
  • the cooling mechanism 400 from over-cooling the edge of the heating body 300 due to the too low temperature of the cooling gas, thereby making the temperature distribution of the workpiece 100 to be processed more uniform, and avoiding the low temperature at the edge of the workpiece 100 to be processed.
  • the temperature in the middle area of the processed workpiece 100 is relatively high, so that the film thickness of different areas of the same workpiece 100 to be processed can be as the same as possible.
  • the heating part 440 can also be used to heat the cooling water in the cooling water channel 430 to prevent the cooling mechanism 400 from overcooling the edge of the heating body 300 due to the excessively low temperature of the cooling water.
  • the temperature distribution of the processed workpiece 100 is relatively uniform, so as to avoid the low temperature at the edge of the workpiece 100 to be processed, and the high temperature in the middle area of the workpiece 100 to be processed, so that the film thickness of different regions of the same workpiece 100 to be processed can be as large as possible. same.
  • the heating part 440 may have various structures.
  • the heating part 440 is a heating tube embedded in the above-mentioned ring-shaped component (for example, the ring-shaped body 401), and the heating tube is wound in a plane spiral around the axis of the ring-shaped component. Therefore, the heating uniformity in the circumferential direction of the cooling main body 401 can be ensured.
  • the cooling mechanism 400 may be in contact with the surface of the heating component facing away from the heating surface.
  • the annular component may be in contact with the outer edge area of the air passage plate 500, so that the cooling mechanism 400 can be in contact with The outer edge area of the air passage plate 500 is directly connected, and the cooling mechanism 400 absorbs heat from the edge of the heating body 300 through the outer edge area of the air passage plate 500, so that the cooling mechanism 400 can cool the edge of the heating body 300.
  • the heating body 300 can uniformly heat the workpiece 100 to be processed, so that the temperature distribution of the workpiece 100 to be processed is more uniform.
  • the cooling mechanism 400 may also be spaced apart from the surface of the heating component facing away from the heating surface, and a heat conduction portion 700 is provided between the cooling mechanism 400 and the surface of the heating component facing away from the heating surface, respectively contacting the two.
  • the above-mentioned annular component is opposite to the outer edge area of the airway plate 500, that is, there is a distance between the above-mentioned annular component and the outer edge area of the airway plate 500, and the distance between the above-mentioned annular component and the airway plate 500 is
  • a heat conduction portion 700 is provided between the outer edge regions, and the heat conduction portion 700 can conduct heat from the outer edge area of the airway plate 500 to the above-mentioned annular component, so that the above-mentioned annular component transfers the heat from the outer edge region of the airway plate 500 Go, play the role of cooling and heating the edge of the body 300.
  • the above-mentioned two heat conduction connection methods both enable the cooling mechanism 400 to cool the edge of the heating body 300 better, so that the temperature distribution of the workpiece 100 to be processed is more uniform.
  • the heat conducting part 700 may be a copper plate, stainless steel fins, copper fins, thermal conductive glue, thermal conductive foam, and the like.
  • the base 200 and the heating component form an installation space between each other, and the cooling mechanism 400 is arranged in the installation space.
  • the surface of the base 200 opposite to the air passage plate 500 may be provided with The installation groove, after the base 200 is connected to the air passage plate 500, the installation groove can form an installation space with the air passage plate 500, and the cooling mechanism 400 is arranged at the bottom of the installation groove, so that the cooling mechanism 400 is arranged in the installation space, and the cooling mechanism A high-temperature resistant part is provided between 400 and the bottom of the groove to prevent the heat from the heating body 300 from being transferred to the base 200.
  • the high-temperature resistant part enables the cooling mechanism 400 to be more stably arranged at the bottom of the installation groove to avoid high temperatures.
  • the connection relationship between the cooling mechanism 400 and the bottom of the groove fails.
  • the method of forming the installation space is relatively simple, and the installation method of the cooling mechanism 400 is simple and reliable, which is convenient for the staff to set up.
  • a support 800 may be provided in the installation space.
  • the support 800 is supported between the cooling mechanism 400 and the bottom of the installation groove to prevent a large contact area between the cooling mechanism 400 and the bottom of the groove, thereby preventing the cooling mechanism 400 from absorbing
  • the heat on the base 200 further ensures that the cooling mechanism 400 can cool the heating body 300 well, and improves the cooling effect of the cooling mechanism 400 on the heating body 300.
  • a vent structure is provided in the heating assembly.
  • the vent structure is used to blow air on the edge of the workpiece to be processed.
  • the blown gas can take away the heat from the edge of the workpiece to be processed.
  • the base and the heating component form an installation space between each other, and the cooling mechanism is arranged in the installation space and located at a position corresponding to the edge area of the heating surface for cooling the heating component.
  • the cooling mechanism can cool the edge area of the heating assembly, so that the heat conduction gas between the workpiece to be processed and the heating assembly can be evenly distributed, preventing the workpiece from being processed
  • the air pressure of the heat-conducting gas between the heat-conducting gas and the heating assembly at the edge of the workpiece to be processed is relatively large, while the air pressure in the middle area of the workpiece to be processed is relatively small.
  • the edge area of the heating component is cooled by the cooling mechanism, which can also make the edge temperature of the workpiece to be processed and the temperature of the middle area as much as possible during the heating process of the workpiece to be processed, and prevent the temperature of the edge of the workpiece to be processed from reaching the process temperature.
  • the temperature in the middle area of the workpiece to be processed has not yet reached the process temperature, so that the temperature distribution of the workpiece to be processed is relatively uniform, avoiding the difference in film thickness of different areas of the same workpiece to be processed, and thereby improving the uniformity of film formation of the workpiece to be processed.
  • the embodiment of the present invention also discloses a semiconductor processing equipment.
  • the disclosed semiconductor processing equipment includes a reaction chamber in which the heating device as described in the above embodiment is provided.
  • the semiconductor processing equipment disclosed in the embodiments of the present invention adopts the heating device disclosed in the embodiments of the present invention to make the edge temperature of the workpiece to be processed and the temperature in the middle area as much as possible during the heating process of the workpiece to be processed, thereby preventing the When the temperature of the edge of the processed workpiece reaches the process temperature, the temperature in the middle area of the workpiece to be processed has not yet reached the process temperature, so that the temperature distribution of the workpiece to be processed is more uniform, and the film thickness of different regions of the same workpiece to be processed is avoided, thereby increasing Film uniformity of the workpiece to be processed.

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Abstract

本发明公开一种加热装置及半导体加工设备，所公开的加热装置用于在半导体加工设备中承载并加热待加工工件，该加热装置包括基部、加热组件和冷却机构，其中：加热组件开设有通气结构，通气结构用于对待加工工件的边缘进行吹气；基部设置于加热组件的背离其加热面的一侧，且基部与加热组件在彼此之间形成安装空间，冷却机构设置于安装空间中，且位于与加热面的边缘区域相对应的位置处，用于对加热组件进行冷却。上述方案能够解决晶圆的成膜均匀性较差的问题。

Description

一种加热装置及半导体加工设备 技术领域
本发明涉及半导体制造技术领域，尤其涉及一种加热装置及半导体加工设备。
背景技术
化学气相沉积(Chemical Vapor Deposition，以下简称CVD)工艺是利用加热或等离子体等各种能源，通过化学反应的方式，在反应器内使实验物质之间发生化学反应或与相应的气体发生化学反应生成另一种气态化合物的技术，然后经过物理载带或者化学迁移的方式，这种气态化合物会被输送到与反应物质源区温度不同的相应区域进行沉积从而形成固态沉积物。
在晶圆10进行CVD工艺加工的过程中，晶圆10通常放置在如图1所示的加热器20上，该加热器20设有加热盘21，加热盘21的中间区域开设有真空吸孔，且真空吸孔与真空管路22连通，通过真空吸孔能够将晶圆10吸附在加热盘21上。在加热盘21加热晶圆10的过程中，由于反应腔室中的气压通常大于真空管路22中的气压，因此晶圆10与加热盘21之间的边缘区域气压较大，而晶圆10与加热盘21之间的中间区域气压较小，导致晶圆10与加热盘21之间的导热气体在晶圆10边缘区域的气压较大，在晶圆10中间区域的气压较小，所以在一定时间内晶圆存在边缘区域温度高，中间区域温度低的温度分布不均的情形，导致晶圆10边缘区域的温度已经达到工艺温度时，晶圆10中间区域的温度还未达到工艺温度，而温度对晶圆10的成膜速率影响较大，一般温度越高，成膜速率越快，从而导致晶圆10边缘区域处的膜厚大于中间区域的膜厚，造成同一晶圆10不同区域的成膜厚度不同，进而导致晶圆10的成膜均匀性较差。
发明内容
本发明公开一种加热装置及半导体加工设备，能够解决晶圆的成膜均匀性较差的问题。
为了解决上述问题，本发明采用下述技术方案：
本发明实施例公开一种加热装置，用于在半导体加工设备中承载并加热待加工工件，所述加热装置包括基部、加热组件和冷却机构，其中：
所述加热组件开设有第一气体通道，且所述第一气体通道的出口位于所述加热组件的加热面的边沿区域，所述第一气体通道的入口位于所述加热组件的背离所述加热面的表面，所述第一气体通道用于对所述待加工工件的边缘进行吹气；
所述基部设置于所述加热组件的背离所述加热面的一侧，且所述基部与所述加热组件在彼此之间形成安装空间，所述冷却机构设置于所述安装空间中，且位于与所述加热面的边缘区域相对应的位置处，用于对所述加热组件进行冷却。
可选的，所述冷却机构包括环状组件，所述环状组件中集成有用于输送冷却液体的冷却水道和用于输送冷却气体的冷却气道中的至少一者；其中，所述冷却气道的出口与所述加热组件的背离所述加热面的表面相对，用以朝向该表面吹送所述冷却气体。
可选的，所述环状组件中集成有用于输送冷却液体的冷却水道和用于输送冷却气体的冷却气道；所述环状组件包括环状主体、第一环状盖板和第二环状盖板，其中，所述环状主体的与所述加热组件的背离所述加热面的表面相对的第一表面上形成有环状凹槽，所述第一环状盖板与所述环状主体密封连接，且与所述环状凹槽构成封闭的所述冷却水道；
所述环状主体中设置有多个吹气孔，且每个所述吹气孔的出口位于所述 第一表面上，每个所述吹气孔的入口位于所述环状主体的背离所述第一表面的第二表面上；所述第二环状盖板在所述环状主体的所述第二表面所在一侧与所述环状主体密封连接，且所述第二环状盖板与所述环状主体构成封闭的环状气道，所述环状气道与各个所述出气孔的入口连通。
可选的，多个所述吹气孔分布在所述冷却水道的内外两侧，且同一侧的所述吹气孔沿所述环状主体的周向间隔分布。
可选的，所述环状组件中还集成有加热部，所述加热部用于对所述环状组件中集成的所述冷却水道和所述冷却气道中的至少一者进行加热。
可选的，所述加热部为内嵌在所述环状组件中的加热管，所述加热管围绕所述环状组件的轴线呈平面螺旋状缠绕。
可选的，所述冷却机构与所述加热组件的背离所述加热面的表面相接触；或者，所述冷却机构与所述加热组件的背离所述加热面的表面间隔设置，且在所述冷却机构与所述加热组件的背离所述加热面的表面之间设置有分别与二者相接触的导热部。
可选的，所述加热组件包括加热本体、设置在所述加热本体的背离所述加热面一侧的气道板，以及气源通道，其中，所述气道板与所述加热本体之间形成第二气体通道，所述第二气体通道与所述第一气体通道的入口连通，且所述第二气体通道还与所述气源通道连通。
可选的，所述第二气体通道包括第一子通道和第二子通道，其中，所述第一子通道与所述第一气体通道连通，且与所述第二子通道连通；所述第二子通道与所述气源通道连通；
其中，所述第二子通道的存气体积和所述第一气体通道的存气体积均小于所述第一子通道的存气体积，且所述第二子通道的流量大于所述第一气体通道的流量。
可选的，所述第一子通道为环形通道；所述第二子通道为多条，多条所 述第二子通道沿所述环形通道的周向间隔分布，且每条所述第二子通道均为沿所述环形通道的径向延伸的直通道，所述直通道的一端与所述环形通道连通，所述直通道的另一端与所述气源通道连通。
可选的，所述第二气体通道为开设在所述气道板和所述加热本体相对的两个表面中的至少一者的凹槽。
可选的，所述基部的与所述气道板相对的表面开设有安装槽，所述安装槽与所述气道板形成所述安装空间，所述冷却机构设置于所述安装槽的槽底，且所述冷却机构与所述槽底之间设有耐高温部。
可选的，所述安装空间中设置有支撑件，所述支撑件支撑于所述冷却机构与所述安装槽的槽底之间。
可选的，所述加热组件还包括环绕在所述加热本体的周围的边缘环；所述第一气体通道包括第三子通道和第四子通道，其中，所述第三子通道设置在所述加热本体中，且所述第三子通道的出口位于所述加热本体的外周壁上；所述第三子通道的入口位于所述加热本体的背离所述加热面的表面，并与所述第一子通道连通；
所述边缘环的内周壁与所述加热本体的外周壁间隔设置，以形成所述第四子通道，所述第四子通道和所述第三子通道连通。
可选的，所述边缘环中设置有用于输送冷却媒介的冷却通道。
本发明实施例还公开一种半导体加工设备，包括反应腔室，所述反应腔室中设置有上述的加热装置。
本发明采用的技术方案能够达到以下有益效果：
本发明实施例公开的加热装置和半导体加工设备中，在加热组件中开设通气结构，该通气结构用于对待加工工件的边缘进行吹气，吹出的气体能够带走待加工工件边缘的热量，同时，基部与加热组件在彼此之间形成安装空间，冷却机构设置于该安装空间中，且位于与加热面的边缘区域相对应的位 置处，用于对加热组件进行冷却。通过将冷却机构设置在与加热面的边缘区域相对应的位置处，可以使冷却机构冷却加热组件的边缘区域，以使待加工工件与加热组件之间的导热气体能够均匀分布，防止待加工工件与加热组件之间的导热气体在待加工工件边缘处的气压较大，而在待加工工件中间区域的气压较小。同时，通过冷却机构冷却加热组件的边缘区域，还可以在待加工工件加热过程中，使待加工工件的边缘温度与中间区域温度尽可能地相同，防止待加工工件边缘的温度达到工艺温度时，待加工工件中间区域的温度还未达到工艺温度，从而使得待加工工件的温度分布较为均匀，避免同一待加工工件不同区域的成膜厚度不一，进而提高待加工工件的成膜均匀性。
附图说明
为了更清楚地说明本发明实施例或背景技术中的技术方案，下面将对实施例或背景技术中所需要使用的附图作简单的介绍，显而易见地，对于本领域普通技术人员而言，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术中一种典型的加热器的结构示意图；
图2为本发明实施例公开的加热装置的结构示意图；
图3为本发明实施例公开的冷却机构的结构示意图；
图4为本发明另一实施例公开的加热装置的结构示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合本发明具体实施例及相应的附图对本发明技术方案进行清楚、完整地描述。显然，所描述的实施例仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本申请的说明书和权利要求书中的术语“第一”、“第二”等是用于区别类似的对象，而不用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换，以便本申请的实施例能够以除了在这里图示或描述的那些以外的顺序实施。且“第一”、“第二”等所区分的对象通常为一类，并不限定对象的个数，例如第一对象可以是一个，也可以是多个。此外，说明书以及权利要求中“和/或”表示所连接对象的至少其中之一，字符“/”，一般表示前后关联对象是一种“或”的关系。
下面结合附图，通过具体的实施例及其应用场景对本申请各个实施例公开的技术方案进行详细地说明。
请参考图2至图4，本发明实施例公开一种加热装置，所公开的加热装置用于在半导体加工设备中承载并加热待加工工件100，待加工工件100通常可以为晶圆。具体地，半导体加工设备通常包括反应腔室，该加热装置位于反应腔室中，在晶圆加工过程中，晶圆放置在该加热装置上，通过该加热装置加热晶圆，待晶圆的温度达到工艺温度时，进行晶圆的镀膜工艺，实现晶圆的加工。
所公开的加热装置包括包括基部200、加热组件和冷却机构400，其中：加热组件具有用于承载待加工工件100的加热面，并且该加热组件开设有通气结构，该通气结构用于对待加工工件100的边缘进行吹气。加热组件可以有多种结构，例如，在本实施例中，加热组件包括加热本体300、设置在该加热本体300的背离上述加热面一侧的气道板500，以及用于与气源(图中未示出)连接的气源通道900，其中，加热本体300呈盘状，用于放置及加热待加工工件100。例如，加热本体300中设置有加热管，该加热管能够产生热量并加热该加热本体300，以通过加热本体300将热量传递至待加工工件100。
上述通气结构例如包括第一气体通道310和第二气体通道600，其中， 第一气体通道310的出口位于加热本体300的上述加热面(即，图2中加热本体300朝上的表面)的边沿区域，第一气体通道310的入口位于加热本体300的背离上述加热面的表面(即，图2中加热本体300朝下的表面)，第一气体通道310用于对待加工工件100的边缘进行吹气；第二气体通道600位于气道板500与加热本体300之间，且第二气体通道600与第一气体通道310的入口连通，并且第二气体通道600还与上述气源通道连通。由气源提供的气体依次晶圆上述气源通道900、第二气体通道600和第一气体通道310流向待加工工件100的边缘处。
通过上述第一气体通道310对待加工工件100的边缘进行吹气，可以防止待加工工件100出现背镀或侧镀的情况，提高待加工工件100的良品率。
在一些实施例中，可选的，上述第二气体通道600为开设在气道板500和加热本体300相对的两个表面中的至少一者的凹槽，在气道板500与加热本体300相连后能够形成第二气体通道600，本发明实施例中对第二气体通道600的形成方式不做限制。
本发明实施例公开的加热装置中，第一气体通道310的出口位于加热本体300的加热面的边沿区域，以使第一气体通道310能够对待加工工件100的边缘进行吹气，吹出的气体能够带走待加工工件100边缘的热量。而且，通过使上述第一气体通道310设置在加热本体300的外缘区域，可以使气体在流经第一气体通道310时带走加热本体300外缘区域的热量，以使第一气体通道310中的气体能够冷却加热本体300的外缘区域，同时，第一气体通道310中吹出的气体还能够带走待加工工件100边缘的热量，使得待加工工件100的温度分布更为均匀。
为了使气体在流经第一气体通道310时能够带走加热本体300外缘区域更多的热量，在一种可选的实施例中，第二气体通道600可以包括第一子通道610和第二子通道620，其中，第一子通道610与上述第一气体通道310 连通，且与第二子通道620连通；第二子通道620与上述气源通道900连通。由气源通道900流出的气体依次经由第二子通道620和第一子通道610流入第一气体通道310。
上述实施例中，第二子通道620的存气体积和第一气体通道310的存气体积均小于第一子通道610的存气体积，且第二子通道620的流量大于第一气体通道310的流量，以使气体在第一子通道610处聚集，实现憋压的效果，从而能够提高第一气体通道310中气体的流速，流速较快的气体能够带走加热本体300外缘区域更多的热量，以使流速较快的气体在流经第一气体通道310时能够更好地冷却加热本体300外缘区域，同时，流速较快的气体吹到待加工工件100的边缘时，也能带走更多的热量，使得待加工工件100的温度分布更为均匀，在待加工工件100加热过程中，加热本体300能够更加均匀地加热待加工工件100，以使待加工工件100的边缘温度与中间区域温度尽可能地相同，进一步避免同一待加工工件100不同区域的成膜厚度不一，进一步提高待加工工件100的成膜均匀性。
在一些实施例中，可选的，第一子通道610为环形通道；第二子通道620为多条，多条第二子通道620沿上述环形通道的周向间隔分布，且每条第二子通道620均为沿环形通道的径向延伸的直通道，该直通道的一端与环形通道连通，该直通道的另一端与上述气源通道900连通。这样，由气源通道900流出的气体可以同时经由多个直通道均匀地流向上述环形通道，从而可以提高气体分布均匀性。
如上文所述，第一子通道610和第二子通道620的形成方式可以有多种，本发明实施例中对第一子通道610和第二子通道620的形成方式不做限制。具体地，上述环形通道(即，第一子通道610)和多个直通道(即，第二子通道620)分别为开设在气道板500和加热本体300相对的两个表面中的至少一者的环槽和多个连接槽。相较于开孔形成第一子通道610和第二子通道 620的方式，在气道板500和加热本体300中的至少一者上开设环槽和连接槽的方式更有利于加工方便，工序较少，且加工简单，从而能够降低气道板500和/或加热本体300的加工难度，还能够降低加工过程的中成本。
在一些实施例中，可选的，加热组件还包括环绕在加热本体300的周围的边缘环301。上述第一气体通道310包括第三子通道310b和第四子通道310a，其中，第三子通道310b设置在加热本体300中，且第三子通道310b的出口位于加热本体300的外周壁上；第三子通道310b的入口位于加热本体300的背离上述加热面的表面，并与上述第一子通道610连通；并且，边缘环301的内周壁与加热本体300的外周壁间隔设置，以形成上述第四子通道310a，第四子通道310a和第三子通道310b连通。可选的，在边缘环301的内周壁与加热本体300的外周壁中的一者开设有沟槽，在边缘环301和加热本体300相连后能够形成第四子通道310a，本发明实施例中对第四子通道310a的形成方式不做限制。边缘环301和加热本体300的其他结构以及功能均为已知技术，为了文本简洁，在此不再赘述。
在一种可选的实施例中，如图4所示，边缘环301中设置有用于输送冷却媒介的冷却通道320。冷却媒介例如为冷却气体或冷却水。冷却通道320中的冷却气体或冷却水能够带走加热本体300边缘的热量，以使加热本体300边缘的温度较低。在加热装置加热待加工工件100的过程中，待加工工件100与加热本体300之间的导热气体能够均匀分布，防止待加工工件100与加热本体300之间的导热气体在待加工工件100边缘处的气压较大，在待加工工件100中间区域的气压较小，从而使得加热本体300能够均匀加热待加工工件100，以使待加工工件100的边缘温度与中间区域温度尽可能地相同，进而使得待加工工件100的温度分布较为均匀，避免同一待加工工件100不同区域的成膜厚度不一，进而使得待加工工件100的成膜均匀性较好。
进一步地，冷却通道320为环状水道，环状水道能够环绕加热本体300， 以使加热本体300边缘的热量能够更多地被冷却通道320中的冷却气体或冷却水所带走，进一步提高冷却通道320对加热本体300边缘的冷却效果，进而提高待加工工件100不同区域的成膜均匀性。
基部200为加热装置的基础构件，基部200能够为加热装置的其他部件提供安装基础。具体地，基部200设置于上述加热组件的背离其加热面的一侧，且基部200与上述加热组件在彼此之间形成安装空间，上述冷却机构400设置于该安装空间中，且位于与上述加热面的边缘区域相对应的位置处，用于对上述加热组件进行冷却。
通过将冷却机构400设置在与上述加热面的边缘区域相对应的位置处，可以使冷却机构400冷却加热组件的边缘区域，以使待加工工件100与加热组件之间的导热气体能够均匀分布，防止待加工工件100与加热组件之间的导热气体在待加工工件100边缘处的气压较大，而在待加工工件100中间区域的气压较小。同时，通过冷却机构400冷却加热组件的边缘区域，还可以在待加工工件100加热过程中，使待加工工件100的边缘温度与中间区域温度尽可能地相同，防止待加工工件100边缘的温度达到工艺温度时，待加工工件100中间区域的温度还未达到工艺温度，从而使得待加工工件100的温度分布较为均匀，避免同一待加工工件不同区域的成膜厚度不一，进而提高待加工工件的成膜均匀性。
冷却机构400在运行时能够吸收热量，起到冷却加热本体300的作用。气道板500上开设有多个气道，部分气道用于对待加工工件100的边缘进行吹气，防止待加工工件100出现背镀或侧镀的情况，提高待加工工件100的良品率，部分气道用于加热装置中形成负压，以使加热装置吸附待加工工件100。
在一些实施例中，可选的，上述冷却机构400包括环状组件，如图3所 示，该环状组件中集成有用于输送冷却液体的冷却冷却水道430和用于输送冷却气体的冷却气道410中的至少一者；其中，冷却气道410的出口与上述加热组件的背离上述加热面的表面相对，用以朝向该表面吹送冷却气体。由于冷却机构400采用环状组件，其对应于上述加热面的边缘区域，可以冷却加热组件的边缘区域，而且环状组件与气道板500外缘区域的相对的面积较大，从而能够使得环状组件更快地将气道板500外缘区域的热量带走，进而能够使得冷却机构400更好地冷却加热本体300，以使待加工工件100不同区域的成膜厚度能够尽可能地相同。
上述环状组件的结构可以有多种，例如，如图3所示，环状组件中集成有用于输送冷却液体的冷却冷却水道430和用于输送冷却气体的冷却气道410。并且，环状组件包括环状主体401、第一环状盖板402和第二环状盖板403，其中，环状主体401的与上述加热组件的背离加热面的表面相对的第一表面(即，环状主体401朝上的表面)上形成有环状凹槽，第一环状盖板402与环状主体401密封连接，且与上述环状凹槽构成封闭的冷却冷却水道430。冷却冷却水道430中可通入冷却水。在具体的冷却过程中，冷却水道430中的冷却水能够带走从气道板500的外缘区域传导至冷却机构400的热量，从而使得冷却机构400能够带走气道板500外缘区域的热量，从而实现冷却气道板500外缘区域的效果，进而实现冷却加热本体300边沿的效果。相较于气体冷却的方式，此种水冷却的方式冷却效果更好，从而使得冷却机构400能够更好地冷却气道板500的外缘区域，进而能够使得待加工工件100的温度分布更为均匀，以使待加工工件100的成膜均匀性更好。
而且，如图3所示，环状主体401中还设置有多个吹气孔410b，且每个吹气孔410b的出口位于环状主体401的上述第一表面上，每个吹气孔410b的入口位于环状主体401的背离上述第一表面的第二表面(环状主体401朝下的表面)上；第二环状盖板403在环状主体401的该第二表面所在一侧与 环状主体401密封连接，且第二环状盖板403与环状主体401构成封闭的环状气道410a，用作该环状气道410a与各个吹气孔410b的入口连通。冷却气体可以依次经由环状气道410a流向各个吹气孔410b，并经由吹气孔410b的出口吹到气道板500的外缘区域，以使冷却气体带走气道板500外缘区域的热量，从而实现冷却气道板500外缘区域的效果。此种设置方式简单可靠，方便设计人员设计冷却机构400，降低冷却机构400的设计难度，同时，冷却气体吹出后较难影响待加工工件100的加工，同时，冷却气体较难影响环境，且冷却气体的成本较低。
在一些可选的实施例中，为了提高在冷却主体401的圆周方向上的冷却均匀性，上述多个吹气孔410b分布在冷却水道430的内外两侧，且同一侧的吹气孔410b沿环状主体401的周向间隔分布。
需要说明的是，在本实施例中，环状组件中集成有冷却水道430和冷却气道410，以既能够通过冷却气体冷却气道板500的外缘区域，又能够通过冷却水冷却气道板500的外缘区域，同时，冷却水道430中的冷却水还能够冷却冷却气道410中的冷却气体，以使冷却机构400对气道板500外缘区域的冷却效果更好，进而使得冷却机构400能够更进一步地冷却加热本体300的边沿，以使待加工工件100的温度分布更为均匀。当然，在实际应用中，根据具体需要，也可以仅设置冷却水道430和冷却气道410中的其中一种。
在冷却机构400冷却加热本体300边沿的过程中，可能由于冷却气体或冷却水的温度过低，导致冷却机构400对加热本体300的边沿过度冷却，从而导致待加工工件100边缘处的温度较低，待加工工件100中间区域的温度较高，致使待加工工件100的温度分布不均，进而导致同一待加工工件100不同区域的成膜厚度不一。基于此，在一种可选的实施例中，上述环状组件中还集成有加热部440，该加热部440用于对上述环状组件中集成的冷却水道430和冷却气道410中的至少一者进行加热。这样，可以防止因冷却气体 的温度过低而导致冷却机构400对加热本体300边沿过度冷却，从而能够使得待加工工件100的温度分布较为均匀，避免待加工工件100边缘处的温度较低，待加工工件100中间区域的温度较高，进而使得同一待加工工件100不同区域的成膜厚度能够尽可能地相同。
当然，加热部440还能够用于加热冷却水道430中的冷却水，防止因冷却水的温度过低而导致冷却机构400对加热本体300的边沿过度冷却，相似地，本申请实施方式能够使得待加工工件100的温度分布较为均匀，从而避免待加工工件100边缘处的温度较低，待加工工件100中间区域的温度较高，进而使得同一待加工工件100不同区域的成膜厚度能够尽可能地相同。
上述加热部440的结构可以有多种，例如，加热部440为内嵌在上述环状组件(例如环状主体401)中的加热管，该加热管围绕环状组件的轴线呈平面螺旋状缠绕，从而可以保证在冷却主体401的圆周方向上的加热均匀性。
在本发明实施例中，冷却机构400可以与上述加热组件的背离加热面的表面相接触，例如，上述环状组件可以与气道板500的外缘区域相接触，以使冷却机构400可以与气道板500的外缘区域直接相连，冷却机构400通过气道板500的外缘区域吸收加热本体300边沿的热量，从而使得冷却机构400能够冷却加热本体300边沿。在待加工工件100加热过程中，加热本体300能够均匀加热待加工工件100，使得待加工工件100的温度分布较为均匀。
或者，冷却机构400也可以与上述加热组件的背离加热面的表面间隔设置，且在冷却机构400与上述加热组件的背离加热面的表面之间设置有分别与二者相接触的导热部700。例如，上述环状组件与气道板500的外缘区域相对，也就是说，上述环状组件与气道板500的外缘区域之间具有距离，且上述环状组件与气道板500的外缘区域之间设置有导热部700，该导热部700能够将气道板500外缘区域的热量传导至上述环状组件，从而使得上述环状组件将气道板500外缘区域的热量带走，起到冷却加热本体300边沿的作用。 上述两种导热相连的方式均使得冷却机构400较好地能够冷却加热本体300边沿，从而使得待加工工件100的温度分布更为均匀。导热部700可以为铜板、不锈钢翅片、铜翅片、导热胶和导热泡棉等。
如上文所述，基部200与加热组件(例如气道板500)在彼此之间形成安装空间，冷却机构400设置于安装空间，具体地，基部200的与气道板500相对的表面可以开设有安装槽，在基部200与气道板500相连后，安装槽能够与气道板500形成安装空间，冷却机构400设置于安装槽的槽底，以使冷却机构400设置于安装空间，且冷却机构400与槽底之间设有耐高温部，避免加热本体300上的热量传导至基部200，同时，耐高温部能够使得冷却机构400较为稳定地设置于安装槽的槽底，避免因温度较高而导致冷却机构400与槽底的连接关系失效。本实施例中，形成安装空间的方式较为简单，且冷却机构400安装方式简单可靠，方便工作人员设置。
进一步地，安装空间中可以设置有支撑件800，支撑件800支撑于冷却机构400与安装槽的槽底之间，防止冷却机构400与槽底的接触面积较大，从而能够防止冷却机构400吸收基部200上的热量，进而保证冷却机构400能够较好地冷却加热本体300，提高冷却机构400对加热本体300的冷却效果。
综上所述，本发明实施例公开的加热装置，在加热组件中开设通气结构，该通气结构用于对待加工工件的边缘进行吹气，吹出的气体能够带走待加工工件边缘的热量，同时，基部与加热组件在彼此之间形成安装空间，冷却机构设置于该安装空间中，且位于与加热面的边缘区域相对应的位置处，用于对加热组件进行冷却。通过将冷却机构设置在与加热面的边缘区域相对应的位置处，可以使冷却机构冷却加热组件的边缘区域，以使待加工工件与加热组件之间的导热气体能够均匀分布，防止待加工工件与加热组件之间的导热气体在待加工工件边缘处的气压较大，而在待加工工件中间区域的气压较小。 同时，通过冷却机构冷却加热组件的边缘区域，还可以在待加工工件加热过程中，使待加工工件的边缘温度与中间区域温度尽可能地相同，防止待加工工件边缘的温度达到工艺温度时，待加工工件中间区域的温度还未达到工艺温度，从而使得待加工工件的温度分布较为均匀，避免同一待加工工件不同区域的成膜厚度不一，进而提高待加工工件的成膜均匀性。
基于本发明实施例所公开的加热装置，本发明实施例还公开一种半导体加工设备，所公开的半导体加工设备包括反应腔室，反应腔室中设置有如上文实施例所述的加热装置。
本发明实施例公开的半导体加工设备，其通过采用本发明实施例所公开的加热装置，可以在待加工工件加热过程中，使待加工工件的边缘温度与中间区域温度尽可能地相同，防止待加工工件边缘的温度达到工艺温度时，待加工工件中间区域的温度还未达到工艺温度，从而使得待加工工件的温度分布较为均匀，避免同一待加工工件不同区域的成膜厚度不一，进而提高待加工工件的成膜均匀性。
本发明上文实施例中重点描述的是各个实施例之间的不同，各个实施例之间不同的优化特征只要不矛盾，均可以组合形成更优的实施例，考虑到行文简洁，在此则不再赘述。
以上所述仅为本发明的实施例而已，并不用于限制本发明。对于本领域技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原理之内所作的任何修改、等同替换、改进等，均应包含在本发明的权利要求范围之内。

Claims (16)

  1. 一种加热装置，用于在半导体加工设备中承载并加热待加工工件，其特征在于，所述加热装置包括基部、加热组件和冷却机构，其中：
    所述加热组件开设有通气结构，所述通气结构用于对所述待加工工件的边缘进行吹气；
    所述基部设置于所述加热组件的背离其加热面的一侧，且所述基部与所述加热组件在彼此之间形成安装空间，所述冷却机构设置于所述安装空间中，且位于与所述加热面的边缘区域相对应的位置处，用于对所述加热组件进行冷却。
  2. 根据权利要求1所述的加热装置，其特征在于，所述冷却机构包括环状组件，所述环状组件中集成有用于输送冷却液体的冷却水道和用于输送冷却气体的冷却气道中的至少一者；其中，所述冷却气道的出口与所述加热组件的背离所述加热面的表面相对，用以朝向该表面吹送所述冷却气体。
  3. 根据权利要求2所述的加热装置，其特征在于，所述环状组件中集成有用于输送冷却液体的冷却水道和用于输送冷却气体的冷却气道；所述环状组件包括环状主体、第一环状盖板和第二环状盖板，其中，所述环状主体的与所述加热组件的背离所述加热面的表面相对的第一表面上形成有环状凹槽，所述第一环状盖板与所述环状主体密封连接，且与所述环状凹槽构成封闭的所述冷却水道；
    所述环状主体中设置有多个吹气孔，且每个所述吹气孔的出口位于所述第一表面上，每个所述吹气孔的入口位于所述环状主体的背离所述第一表面的第二表面上；所述第二环状盖板在所述环状主体的所述第二表面所在一侧与所述环状主体密封连接，且所述第二环状盖板与所述环状主体构成封闭的环状气道，所述环状气道与各个所述出气孔的入口连通。
  4. 根据权利要求3所述的加热装置，其特征在于，多个所述吹气孔分布在所述冷却水道的内外两侧，且同一侧的所述吹气孔沿所述环状主体的周 向间隔分布。
  5. 根据权利要求2所述的加热装置，其特征在于，所述环状组件中还集成有加热部，所述加热部用于对所述环状组件中集成的所述冷却水道和所述冷却气道中的至少一者进行加热。
  6. 根据权利要求5所述的加热装置，其特征在于，所述加热部为内嵌在所述环状组件中的加热管，所述加热管围绕所述环状组件的轴线呈平面螺旋状缠绕。
  7. 根据权利要求1-6中任意一项所述的加热装置，其特征在于，所述冷却机构与所述加热组件的背离所述加热面的表面相接触；或者，所述冷却机构与所述加热组件的背离所述加热面的表面间隔设置，且在所述冷却机构与所述加热组件的背离所述加热面的表面之间设置有分别与二者相接触的导热部。
  8. 根据权利要求1所述的加热装置，其特征在于，所述加热组件包括加热本体、设置在所述加热本体的背离所述加热面一侧的气道板，以及用于与气源连接的气源通道，其中，所述通气结构包括第一气体通道和第二气体通道，其中，所述第一气体通道的出口位于所述加热本体的所述加热面的边沿区域，所述第一气体通道的入口位于所述加热本体的背离所述加热面的表面，所述第一气体通道用于对所述待加工工件的边缘进行吹气；
    所述第二气体通道位于所述气道板与所述加热本体之间，且所述第二气体通道与所述第一气体通道的入口连通，并且所述第二气体通道还与所述气源通道连通。
  9. 根据权利要求8所述的加热装置，其特征在于，所述第二气体通道包括第一子通道和第二子通道，其中，所述第一子通道与所述第一气体通道连通，且与所述第二子通道连通；所述第二子通道与所述气源通道连通；
    其中，所述第二子通道的存气体积和所述第一气体通道的存气体积均小于所述第一子通道的存气体积，且所述第二子通道的流量大于所述第一气体 通道的流量。
  10. 根据权利要求9所述的加热装置，其特征在于，所述第一子通道为环形通道；所述第二子通道为多条，多条所述第二子通道沿所述环形通道的周向间隔分布，且每条所述第二子通道均为沿所述环形通道的径向延伸的直通道，所述直通道的一端与所述环形通道连通，所述直通道的另一端与所述气源通道连通。
  11. 根据权利要求8-10任意一项所述的加热装置，其特征在于，所述第二气体通道为开设在所述气道板和所述加热本体相对的两个表面中的至少一者的凹槽。
  12. 根据权利要求8所述的加热装置，其特征在于，所述基部的与所述气道板相对的表面开设有安装槽，所述安装槽与所述气道板形成所述安装空间，所述冷却机构设置于所述安装槽的槽底，且所述冷却机构与所述槽底之间设有耐高温部。
  13. 根据权利要求12所述的加热装置，其特征在于，所述安装空间中设置有支撑件，所述支撑件支撑于所述冷却机构与所述安装槽的槽底之间。
  14. 根据权利要求9所述的加热装置，其特征在于，所述加热组件还包括环绕在所述加热本体的周围的边缘环；所述第一气体通道包括第三子通道和第四子通道，其中，所述第三子通道设置在所述加热本体中，且所述第三子通道的出口位于所述加热本体的外周壁上；所述第三子通道的入口位于所述加热本体的背离所述加热面的表面，并与所述第一子通道连通；
    所述边缘环的内周壁与所述加热本体的外周壁间隔设置，以形成所述第四子通道，所述第四子通道和所述第三子通道连通。
  15. 根据权利要求14所述的加热装置，其特征在于，所述边缘环中设置有用于输送冷却媒介的冷却通道。
  16. 一种半导体加工设备，包括反应腔室，其特征在于，所述反应腔室中设置有如权利要求1至15中任一项所述的加热装置。
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