1223328 玖、發明說明 發明所屬之技術領域 本發明係關於一種在半導體晶圓上製造薄膜的裝置。 先前技術 用以在晶圓上沉積薄膜的裝置係藉由將多種反應氣體 送入至該裝置中，以便於該晶圓上沉積薄膜。爲製造高度 整合的晶片，應該將該等具有高純度且電氣特徵極佳的薄 膜沉積在晶圓上。再者，因爲半導體製造廠都期望實施微 (micro)設計規貝[]，所以必須使得該薄膜的厚度非常均勻 以及改良該薄膜的雜質以及電氣特徵。爲達此目的，該等 被送入至該裝置中的反應氣體必須均勻地噴灑在該晶圓上 。因此，已經有人硏究如何改良在晶圓上沉積薄膜的裝置 之結構。 發明內容 爲解決上述的問題，本發明的其中一項目的是提供一 種用以在晶圓上沉積薄膜的裝置，其利用多種反應氣體可 有效地沉積該薄膜，以便實現高純度、極佳電氣特徵以及 對該晶圓產生極佳的階躍式覆蓋率。 本發明的另一項目的則是提供一種用以在晶圓上沉積 薄膜的裝置，用以改良散熱效率，以便即使晶圓區塊的溫 度非常高，亦能解決因爲噴嘴的高溫所導致的問題。 爲達到上面的目的，根據本發明的一項觀點，本發明 提供一種用以在晶圓上沉積薄膜的裝置，其包括一反應器 區塊110，其中放置著晶圓w ; —晶圓區塊120，其係被安 9 1223328 裝於該反應器區塊110之中，用以安置該晶圓w ; —頂盤 130,其係耦合用以覆蓋該反應器區塊110; —第一供應線 151，用以傳送欲供應給該晶圓w的第一反應氣體及/或鈍 性氣體；一第二供應線156，用以傳送欲供應給該晶圓w 的第二反應氣體及/或鈍性氣體；以及一噴嘴140,其係安 裝於該頂盤130中，其具有多個第一及第二噴孔149a及 149b，用以將該等第一及第二供應線151及156所供應的氣 體朝該晶圓w噴灑，其中該噴嘴140包括第一、第二及第 三擴散板141、144及147，其係被連續地堆疊在一起，其 中該第一擴散板141包括被連接至第二供應線156的放射 狀通道142以及用以與該等放射狀通道142進行交換的第 一分配孔142a及142b ;該第二擴散板144包括一第二擴散 區145，用以均勻地擴散經由該等第一分配孔142a及142b 所供應的氣體，以及以等間隔的方式形成於該第二擴散區 145中的第二分配孔145a ;以及該第三擴散板147，其包括 一第三擴散區148，用以均句地擴散經由該第一供應線151 所供應的氣體；第一噴孔149a，用以噴灑經由該第三擴散 區148所供應的氣體，以及第二噴孔149b，用以噴灑經由 該等第二分配孔145a所供應的氣體，該等第一及第二噴孔 149a及149b都係以特定的間隔而形成。 較佳的係會在頂盤130中形成多個盤分配孔132，用以 連接該第二供應線156及該等第一分配孔142a及142b。 較佳的係，該第二擴散板144的上表面係以不平整的 方式形成的，而該等第二分配孔145a則係形成於凹部中。 10 1223328 較佳的係，該第三擴散板147的上表面係以不平整的 方式形成的，而該等第一噴孔149a係形成於凹部中，而該 等第二噴孔149b則形成於凸部中。 較佳的係，該裝置進一步包括一第一擴散器163，其具 有多個以對稱方式所形成的開孔163a，用以均勻地混合經 由該第一供應線151所供應的第一反應氣體及/或鈍性氣體 ，並且將該氣體噴灑於第三擴散區148。 較佳的係，該裝置進一步包括一第二擴散器168，其係 內建於擴散反應室167之中，用以均勻地混合經由該第二 供應線156所供應的第二反應氣體及/或鈍性氣體，並且將 該氣體供應給該放射狀通道142,其中開孔168a會以對稱 方式形成在該第二擴散器168中。 較佳的係會在頂盤130中形成冷卻通道133，用以讓冷 卻劑流經其中。此處，該冷卻通道133包括一形成於該噴 嘴140之中間部份上的內側冷卻通道133a以及用以包圍該 內側冷卻通道133a的外側冷卻通道133b。 實施方式 現在將參考隨附圖式更完整地說明本發明，該等隨附 圖式中所示的係本發明的較佳實施例。 圖1爲根據本發明用以在晶圓上沉積薄膜的裝置之剖 面圖。圖，2及3爲圖1之頂盤及噴嘴的爆炸透視圖，其中 圖2爲俯視圖而圖3爲仰視圖。參考圖1至3，該用以在晶 圓上沉積薄膜的裝置包括一反應器區塊110、一晶圓區塊 120、一頂盤130以及一排氣單元（圖中未顯示）。此處，在 11 1223328 該反應器區塊110中置放著一晶圓w，該晶圓係經由晶圓 傳輸孔115而傳輸的。該晶圓區塊120係安裝於該反應器 區塊110之中，而該晶圓w則係被安置於該晶圓區塊120 中。該頂盤130係安裝用以覆蓋該反應器區塊11〇，以便將 · 該反應器區塊110與外界隔離。該排氣單元則會將該反應 -^ 器區塊110中的氣體排出到外界。 第一及第二供應線151及156係藉由反應氣體引入器 160裝配於該頂盤130的頂端，用以分別傳輸第一及第二反 0 應氣體及/或鈍性氣體給該晶圓w。噴嘴140則係安裝於該 頂盤130的底端，用以朝該晶圓w噴灑經由該等第一及第 二供應線151及156所供應的氣體。 此處，該頂盤130包括一安裝孔131，而噴嘴140則可 安裝在該頂盤130底部的安裝孔131中。在該安裝孔131 " 附近則會形成被連接至第一擴散板141中的放射狀通道142 的複數個盤分配孔132，稍後將作說明。 如圖13所示，在該頂盤130中會形成圓形冷卻通道 φ 133，用以冷卻頂盤130及噴嘴140。此處的冷卻通道數量 可能有複數個，舉例來說，本發明爲兩個。此時，必須控 制流經該等冷卻通道133a及133b的冷卻劑數量’以便控制 頂盤130及噴嘴140的冷卻程度。該等冷卻通道133可以 分成內側冷卻通道133a及外側冷卻通道133b °即使因爲晶 圓區塊120所產生的輻射熱致使在中心處的噴嘴140的溫 度高於其在邊緣處的溫度，只要藉由控制流經該等冷卻通 道133a及133b的冷卻劑數量，便可將噴嘴140的溫度保持 12 1223328 的相當均勻。 如圖9所示，該噴嘴140包括複數個第一噴孔149a及 第二噴孔149b，其係以等間隔的形式形成於底部。圖9中 以透明的圓形代表第一噴孔149a，以不透明的圓形代表第 二噴孔149b，以便能夠淸楚地說明本發明。第一供應線 151所供應的氣體會經由該等第一噴孔149a來噴灑，第二 供應線156所供應的氣體則會經由該等第二噴孔149b來噴 灑。 當更詳細地剖析該噴嘴140時，將會發現其係由第一 至第三擴散板141、144及147所構成的，三者係連續地堆 疊在該頂盤130的下方部。 圖4及5爲圖1之第一擴散板141的透視圖，其中圖4 爲俯視圖而圖5爲仰視圖。 參考圖4及5，該第一擴散板141包括被連接至第二供 應線156的放射狀通道142，以及被連接至該等放射狀通道 142的第一分配孔。此處，該等第一分配孔可分爲形成於該 等放射狀通道142的中間部分的內側第一分配孔142a，以 及形成於該等放射狀通道142的邊緣部分的外側第一分配 孔 142b。 此外，在該第一擴散板141的中間則會形成一安裝管 線143。此處，當將第二及第三擴散板144及147裝配至該 第一擴散板141，該安裝管線143則會被耦合至該安裝孔 131，以便將噴嘴140安裝於該頂盤130之中。 圖6及7爲圖1之第二擴散板144的透視圖，其中圖6 13 1223328 爲俯視圖而圖7爲仰視圖。 參考圖6及7 ’該第二擴散板144包括一第二擴散區 145,用以均勻地擴散經由該等內側及外側第一分配孔142a 及142b所供應的氣體，以及以等間隔的方式形成於該第二 擴散區145中的第二分配孔145a。此處係因爲該第二擴散 板144上表面不平整的關係，所以才會形成第二擴散區M5 。該第二擴散區145係以等間隔的方式形成各個凹部。 圖8及9爲圖1之第三擴散板ι47的透視圖，其中圖8 爲俯視圖而圖9爲仰視圖。 參考圖8及9 ’該第三擴散板147具有一第三擴散區 148，用以均勻地擴散經由該第一供應線151所供應的氣體 。此處，係因爲該第三擴散板147上表面不平整的關係， 所以才會形成第三擴散區148。 該等第一噴孔149a係形成於該第三擴散板147的凹部 中，而該等第二噴孔149b則係形成於凸部中。該等第一至 第三擴散板141、144及147經過堆疊之後，第一供應線 151所供應的氣體會經由該等第一噴孔149a來噴灑，第二 供應線156所供應的氣體則會經由該等第二噴孔149b來噴 灑。 該等第一至第三擴散板141、144及147係利用螺絲固 接在該頂盤130的底部，其中第二及第三擴散板144及147 之不平整的上表面會分別固接至第一擴散板141及第二擴 散板144的底部。此時，位於第二擴散板144中的第二分 配孔145a則會與位於第三擴散板147中的第二噴孔149b進 14 1223328 行交換。 圖10爲圖1之反應氣體引入器160的透視圖。圖11 及12爲內建於圖10之反應氣體引入器160中的第二擴散 器168的透視圖，其中圖11爲俯視圖而圖12爲仰視圖。 如圖1、2及10所示，該反應氣體引入器160係固接 於該頂盤130的頂部，非常緊密地插入至第一擴散板141 的安裝管線143之中。該反應氣體引入器160係由下面部 分所組成：一氣體引入管161，其係被耦合至該安裝管線 143的內部；一擴散反應室套蓋166，其係固接至該頂盤 130的頂部。此處，在該氣體引入管161及該安裝管線143 之間以及在該擴散反應室套蓋166及該頂盤130之間安裝 著多個〇型環，以便密封該等組件之間的間隙。 在該氣體引入管161中會形成一透氣孔162。 在該擴散反應室套蓋166內則會形成一環型的擴散反 應室167。 該第一供應線151會被耦合至該氣體引入管161。用以 均勻地混合第一反應氣體及/或鈍性氣體並且噴灑該氣體的 第一擴散器163係被配置在該氣體引入管161的末端。在 該第一擴散器163中會以對稱的方式形成複數個開孔163a 。此處，該等開孔163a係形成於位於第三擴散板H7之上 的第三擴散區148的中間部分。本發明中配置著四個開孔 163a 〇 該第二供應線156會被耦合至該擴散反應室套蓋166° 用以均勻地混合第二反應氣體及/或鈍性氣體並且透過盤分 15 1223328 配孔132將該氣體供應給該等放射狀通道142的第二擴散 器168係被安裝於反應室167內，該反應室167係形成於 該擴散反9應室套蓋166之內。在一環型部件中會以對稱的 方式形成複數個開孔168a，以便形成該第二擴散器168。 在慣用的噴嘴中，，會形成一個很大的圓形擴散區用 以高效率的方式擴散該第二反應氣體，然而當於高溫下實 施化學氣相沉積（CVD)或原子層沉積（ALD)製程時，此種結 構並無法利用熱傳輸效率保持合宜的噴嘴溫度。 在本發明中，即使當該晶圓區塊ί20的溫度高於550°C ，該等第一至第三擴散板141、144及147的不平整性仍然 能夠以高效率的方式將該晶圓區塊120的輻射熱傳導給頂 盤130。因此，可避免噴嘴140因爲高溫而被彎曲或是被銹 蝕，並且可將該噴嘴140與該製程氣體的反應情形降至最 低程度，以便將顆粒生成的情況降至最低程度。 此外，形成於該頂盤130中的冷卻通道133亦可控制 該噴嘴140的溫度。此處，如果因爲製程溫度的關係，而 無法單獨利用該噴嘴140至該頂盤130熱傳輸效率來保持 該噴嘴140的合宜溫度的話，便可利用冷卻劑（例如水、油 或氣體）流過該冷卻通道133。因此，便可保持該噴嘴140 之該等第一至第三擴散板141、144及147的的合宜溫度。 將該冷卻通道133分成內側冷卻通道133a及外側冷卻通道 133b的原因如上所述。 現在將於後面說明該部用以在該晶圓上沉積薄膜的裝 置的作業方式。 16 1223328 經由晶圓傳輸孔115而傳輸的晶圓w係安置於該晶圓 區塊120中。 接著，當將該晶圓w加熱至預設溫度後，便會藉由流 過該第一供應線151、該透氣孔162、該第一擴散器163以 及該等開孔163a將該第一反應氣體及/或鈍性氣體供應給該 第三擴散板147的第三擴散區148。被供應至該第三擴散區 148的第一反應氣體及/或鈍性氣體會充分地被擴散至該第 三擴散區148之中而且可透過該等第一噴孔149a而被噴灑 於該晶圓w之上。 另一方面，藉由流過該第二供應線156、該反應氣體引 入器160的擴散反應室167、該第二擴散器168的開孔168a 以及該等盤分配孔132便可將該第二反應氣體及/或鈍性氣 體供應給該第一擴散板141的放射狀通道142。接著，該第 二反應氣體及/或鈍性氣體便可透過該放射狀通道142的第 一分配孔142a及142b供應給該第二擴散板144的第二擴散 區145，並且擴散於該第二擴散區145之上。當流過該等第 二分配孔145a之後，該第二反應氣體及/或鈍性氣體便會透 過該等第二噴孔149b被噴灑於該晶圓w之上。 因此，該第一及第二反應氣體及/或鈍性氣體便會形成 該晶圓w之上的薄膜，而該製程中未被使用到的反應劑及 氣體則會經由排氣孔被傳輸到該排氣單元。 如上所述，該具有高雜質、極佳電氣特徵以及極佳的 步驟覆蓋範圍的薄膜可以利用該等反應氣體以高效率的方 式沉積於該晶圓上。此外，亦可於高溫下實施CVD製程或 17 1223328 ALD製程。 雖然已經參考本發明之較佳實施例對其作出詳盡的顯 示及說明，不過熟習本技藝的人士將會瞭解在不脫離隨附 申請專利範圍所界定之本發明的精神及範疇下’可於形式 上及細節部分進行各種變化。 圖式簡單說明 (一） 圖式部分 透過對其較佳實施例的詳細說明，並且參考隨附的圖 式，便可更淸楚本發明上述的目的及優點，其中： 圖1爲用以在晶圓上沉積薄膜的裝置之剖面圖； 圖2及3爲圖1之頂盤及噴嘴的分解立體圖，其中圖2 爲俯視圖而圖3爲仰視圖； 圖4及5爲圖1之第一擴散板的立體圖’其中圖4爲 俯視圖而圖5爲仰視圖； 圖6及7爲圖1之第二擴散板的立體圖，其中圖6爲 俯視圖而圖7爲仰視圖； 圖8及9爲圖1之第三擴散板的立體圖，其中圖8爲 俯視圖而圖9爲仰視圖； 圖10爲圖1之反應氣體引入器的透視圖； 圖11及12爲內建於圖10之反應氣體引入器中的第二 擴散器之立體圖，其中圖11爲俯視圖而圖12爲仰視圖； 以及 圖13爲形成於圖1之頂盤中的冷卻通道的平面圖。 (二） 元件符號說明 18 1223328 1 110 反應器區塊 2 w 晶圓 3 115 晶圓傳輸孔 4 120 晶圓區塊 5 130 頂盤 6 131 安裝孔 7 132 盤分配孔 8 133 冷卻通道 9 133a 內側冷卻通道 10 133b 外側冷卻通道 11 140 口賁嘴 12 141 第一擴散板 13 142 通道 14 142a?142b 第一分配孔 15 143 安裝管線 16 144 第二擴散板 17 145 第二擴散區 18 145a 第二分配孔 19 147 第三擴散板 20 148 第三擴散區 21 149a 第一噴孔 22 149b 第二噴孔 23 151 第一供應線 24 156 第二供應線1223328 (ii) Description of the invention Technical field of the invention The present invention relates to a device for manufacturing a thin film on a semiconductor wafer. In the prior art, a device for depositing a thin film on a wafer facilitates deposition of a thin film on the wafer by feeding a plurality of reactive gases into the device. To produce highly integrated wafers, these thin films with high purity and excellent electrical characteristics should be deposited on the wafer. Furthermore, since semiconductor manufacturers are expected to implement micro design regulations, it is necessary to make the thickness of the film very uniform and to improve the impurities and electrical characteristics of the film. To achieve this, the reaction gases fed into the device must be sprayed evenly on the wafer. Therefore, how to improve the structure of a device for depositing a thin film on a wafer has been investigated. SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, one object of the present invention is to provide a device for depositing a thin film on a wafer, which can efficiently deposit the thin film by using a plurality of reactive gases in order to achieve high purity and excellent electrical characteristics. And it produces excellent step coverage on the wafer. Another item of the present invention is to provide a device for depositing a thin film on a wafer to improve heat dissipation efficiency so that even if the temperature of the wafer block is very high, the problem caused by the high temperature of the nozzle can be solved. . To achieve the above object, according to an aspect of the present invention, the present invention provides a device for depositing a thin film on a wafer, which includes a reactor block 110 in which a wafer w is placed;-a wafer block 120, which is installed in the reactor block 110 by An 9 1223328 to house the wafer w;-a top plate 130, which is coupled to cover the reactor block 110;-a first supply line 151, for transmitting the first reaction gas and / or inert gas to be supplied to the wafer w; a second supply line 156, for transmitting the second reaction gas and / or inert gas to be supplied to the wafer w Gas; and a nozzle 140, which is installed in the top plate 130 and has a plurality of first and second spray holes 149a and 149b for supplying the first and second supply lines 151 and 156 The gas is sprayed toward the wafer w, wherein the nozzle 140 includes first, second, and third diffusion plates 141, 144, and 147, which are continuously stacked together, wherein the first diffusion plate 141 includes Radial passages 142 of the second supply line 156 and exchanges with the radial passages 142 A distribution hole 142a and 142b; the second diffusion plate 144 includes a second diffusion region 145 for uniformly diffusing the gas supplied through the first distribution holes 142a and 142b, and is formed in the space at an equal interval; A second distribution hole 145a in the second diffusion region 145; and the third diffusion plate 147, which includes a third diffusion region 148 for uniformly diffusing the gas supplied through the first supply line 151; The spray holes 149a are used to spray the gas supplied through the third diffusion zone 148, and the second spray holes 149b are used to spray the gas supplied through the second distribution holes 145a, and the first and second sprays Both the holes 149a and 149b are formed at specific intervals. Preferably, a plurality of tray distribution holes 132 are formed in the top tray 130 to connect the second supply line 156 and the first distribution holes 142a and 142b. Preferably, the upper surface of the second diffusion plate 144 is formed in an uneven manner, and the second distribution holes 145a are formed in the recessed portions. 10 1223328 Preferably, the upper surface of the third diffusion plate 147 is formed in an uneven manner, and the first spray holes 149a are formed in the recesses, and the second spray holes 149b are formed in In the convex part. Preferably, the device further includes a first diffuser 163 having a plurality of openings 163a formed in a symmetrical manner to uniformly mix the first reaction gas supplied through the first supply line 151 and And / or a passive gas, and spray the gas to the third diffusion region 148. Preferably, the apparatus further includes a second diffuser 168, which is built in the diffusion reaction chamber 167 to uniformly mix the second reaction gas supplied through the second supply line 156 and / or Passive gas, and the gas is supplied to the radial channel 142, wherein an opening 168a is formed in the second diffuser 168 in a symmetrical manner. The preferred system will form cooling channels 133 in the top plate 130 to allow the coolant to flow therethrough. Here, the cooling passage 133 includes an inner cooling passage 133a formed on a middle portion of the nozzle 140 and an outer cooling passage 133b surrounding the inner cooling passage 133a. Embodiments The present invention will now be described more fully with reference to the accompanying drawings, which are illustrated as preferred embodiments of the invention. FIG. 1 is a cross-sectional view of an apparatus for depositing a thin film on a wafer according to the present invention. Figures 2 and 3 are exploded perspective views of the top plate and nozzle of Figure 1, where Figure 2 is a top view and Figure 3 is a bottom view. Referring to Figures 1 to 3, the apparatus for depositing a thin film on a wafer includes a reactor block 110, a wafer block 120, a top plate 130, and an exhaust unit (not shown). Here, a wafer w is placed in the reactor block 110 of 11 1223328, and the wafer is transferred through the wafer transfer hole 115. The wafer block 120 is installed in the reactor block 110, and the wafer w is disposed in the wafer block 120. The top plate 130 is installed to cover the reactor block 110 so as to isolate the reactor block 110 from the outside. The exhaust unit exhausts the gas in the reactor block 110 to the outside. The first and second supply lines 151 and 156 are mounted on the top of the top plate 130 by a reaction gas introducer 160 to transmit the first and second reaction gases and / or inert gases to the wafer, respectively. w. The nozzle 140 is installed at the bottom end of the top plate 130 and sprays the gas supplied through the first and second supply lines 151 and 156 toward the wafer w. Here, the top plate 130 includes a mounting hole 131, and the nozzle 140 can be installed in the mounting hole 131 at the bottom of the top plate 130. Near the mounting hole 131 ", a plurality of disk distribution holes 132 connected to the radial passage 142 in the first diffusion plate 141 are formed, which will be described later. As shown in FIG. 13, a circular cooling channel φ 133 is formed in the top plate 130 to cool the top plate 130 and the nozzle 140. There may be a plurality of cooling channels, for example, the present invention has two. At this time, the amount of the coolant flowing through the cooling channels 133a and 133b must be controlled in order to control the degree of cooling of the top plate 130 and the nozzle 140. The cooling channels 133 can be divided into inner cooling channels 133a and outer cooling channels 133b. Even if the temperature of the nozzle 140 at the center is higher than the temperature at the edges due to the radiant heat generated by the wafer block 120, as long as it is controlled by control The amount of coolant flowing through the cooling channels 133a and 133b can keep the temperature of the nozzle 140 fairly uniform 12 1223328. As shown in FIG. 9, the nozzle 140 includes a plurality of first spray holes 149a and second spray holes 149b, which are formed at the bottom at equal intervals. In Fig. 9, the first nozzle hole 149a is represented by a transparent circle, and the second nozzle hole 149b is represented by an opaque circle, so that the present invention can be explained clearly. The gas supplied from the first supply line 151 is sprayed through the first spray holes 149a, and the gas supplied from the second supply line 156 is sprayed through the second spray holes 149b. When the nozzle 140 is analyzed in more detail, it will be found that it is composed of first to third diffusion plates 141, 144, and 147, and the three are continuously stacked on the lower portion of the top plate 130. 4 and 5 are perspective views of the first diffusion plate 141 of FIG. 1, wherein FIG. 4 is a top view and FIG. 5 is a bottom view. 4 and 5, the first diffuser plate 141 includes radial channels 142 connected to the second supply line 156, and first distribution holes connected to the radial channels 142. Here, the first distribution holes can be divided into an inner first distribution hole 142a formed in a middle portion of the radial channels 142, and an outer first distribution hole 142b formed in an edge portion of the radial channels 142. . In addition, a mounting line 143 is formed in the middle of the first diffusion plate 141. Here, when the second and third diffusion plates 144 and 147 are assembled to the first diffusion plate 141, the mounting line 143 is coupled to the mounting hole 131 so as to mount the nozzle 140 in the top plate 130. . 6 and 7 are perspective views of the second diffuser plate 144 of FIG. 1, wherein FIG. 6 13 1223328 is a top view and FIG. 7 is a bottom view. Referring to FIGS. 6 and 7 ′, the second diffusion plate 144 includes a second diffusion region 145 for uniformly diffusing the gas supplied through the inner and outer first distribution holes 142 a and 142 b, and formed at equal intervals. A second distribution hole 145a in the second diffusion region 145. Here, the second diffusion region M5 is formed because the upper surface of the second diffusion plate 144 is uneven. Each of the second diffusion regions 145 is formed at regular intervals. 8 and 9 are perspective views of the third diffuser plate 47 of FIG. 1, wherein FIG. 8 is a top view and FIG. 9 is a bottom view. Referring to FIGS. 8 and 9 ′, the third diffusion plate 147 has a third diffusion region 148 for uniformly diffusing the gas supplied through the first supply line 151. Here, the third diffusion region 148 is formed because the upper surface of the third diffusion plate 147 is uneven. The first spray holes 149a are formed in the concave portion of the third diffusion plate 147, and the second spray holes 149b are formed in the convex portion. After the first to third diffusion plates 141, 144, and 147 are stacked, the gas supplied from the first supply line 151 is sprayed through the first spray holes 149a, and the gas supplied from the second supply line 156 is sprayed. Sprayed through the second spray holes 149b. The first to third diffusion plates 141, 144, and 147 are fixed to the bottom of the top plate 130 by screws, and the uneven upper surfaces of the second and third diffusion plates 144 and 147 are respectively fixed to the first A bottom of the diffusion plate 141 and the second diffusion plate 144. At this time, the second distribution hole 145a located in the second diffusion plate 144 is exchanged with the second spray hole 149b located in the third diffusion plate 147. FIG. 10 is a perspective view of the reaction gas introducer 160 of FIG. 1. 11 and 12 are perspective views of the second diffuser 168 built in the reaction gas introducer 160 of FIG. 10, wherein FIG. 11 is a top view and FIG. 12 is a bottom view. As shown in FIGS. 1, 2 and 10, the reaction gas introducer 160 is fixed to the top of the top plate 130 and is inserted into the installation line 143 of the first diffusion plate 141 very tightly. The reaction gas introducer 160 is composed of the following parts: a gas introduction pipe 161 which is coupled to the inside of the installation pipeline 143; a diffusion reaction chamber cover 166 which is fixed to the top of the top plate 130 . Here, a plurality of O-rings are installed between the gas introduction pipe 161 and the installation line 143 and between the diffusion reaction chamber cover 166 and the top plate 130 in order to seal the gap between the components. A vent hole 162 is formed in the gas introduction pipe 161. A ring-shaped diffusion reaction chamber 167 is formed in the diffusion reaction chamber cover 166. The first supply line 151 is coupled to the gas introduction pipe 161. A first diffuser 163 for uniformly mixing the first reaction gas and / or the inert gas and spraying the gas is disposed at an end of the gas introduction pipe 161. A plurality of openings 163a are formed in the first diffuser 163 in a symmetrical manner. Here, the openings 163a are formed in the middle portion of the third diffusion region 148 located above the third diffusion plate H7. In the present invention, four openings 163a are configured. The second supply line 156 will be coupled to the diffusion reaction chamber cover 166 ° for uniformly mixing the second reaction gas and / or inert gas and passing through the plate 15 1223328. The second diffuser 168 for supplying the gas to the radial channels 142 is installed in the reaction chamber 167, and the reaction chamber 167 is formed in the diffusion reaction chamber cover 166. A plurality of openings 168a are formed in a ring-shaped member in a symmetrical manner to form the second diffuser 168. In the conventional nozzle, a large circular diffusion region is formed to diffuse the second reaction gas in an efficient manner. However, chemical vapor deposition (CVD) or atomic layer deposition (ALD) is performed at a high temperature. During the manufacturing process, this structure cannot use the heat transfer efficiency to maintain a suitable nozzle temperature. In the present invention, even when the temperature of the wafer block 20 is higher than 550 ° C, the unevenness of the first to third diffuser plates 141, 144, and 147 can still make the wafer in a highly efficient manner. The radiant heat of the block 120 is conducted to the top plate 130. Therefore, the nozzle 140 can be prevented from being bent or corroded due to the high temperature, and the reaction situation between the nozzle 140 and the process gas can be minimized, so as to minimize the generation of particles. In addition, the cooling channel 133 formed in the top plate 130 can also control the temperature of the nozzle 140. Here, if the heat transfer efficiency of the nozzle 140 to the top plate 130 cannot be used to maintain the proper temperature of the nozzle 140 because of the process temperature, a coolant (such as water, oil, or gas) can be used to flow through. The cooling channel 133. Therefore, the proper temperatures of the first to third diffusion plates 141, 144, and 147 of the nozzle 140 can be maintained. The reason why the cooling passage 133 is divided into the inner cooling passage 133a and the outer cooling passage 133b is as described above. The operation of the device for depositing a thin film on the wafer will be described later. 16 1223328 The wafer w transferred through the wafer transfer hole 115 is disposed in the wafer block 120. Then, when the wafer w is heated to a preset temperature, the first reaction is performed by flowing through the first supply line 151, the ventilation hole 162, the first diffuser 163, and the openings 163a. A gas and / or a passive gas is supplied to the third diffusion region 148 of the third diffusion plate 147. The first reaction gas and / or inert gas supplied to the third diffusion region 148 will be sufficiently diffused into the third diffusion region 148 and can be sprayed on the crystal through the first spray holes 149a. Above the circle w. On the other hand, the second supply line 156, the diffusion reaction chamber 167 of the reaction gas introducer 160, the openings 168a of the second diffuser 168, and the disk distribution holes 132 can flow through the second The reactive gas and / or the inert gas are supplied to the radial channels 142 of the first diffusion plate 141. Then, the second reactive gas and / or inert gas can be supplied to the second diffusion region 145 of the second diffusion plate 144 through the first distribution holes 142 a and 142 b of the radial passage 142 and diffused in the second Above the diffusion region 145. After flowing through the second distribution holes 145a, the second reaction gas and / or inert gas is sprayed on the wafer w through the second spray holes 149b. Therefore, the first and second reactive gases and / or inert gases will form a thin film on the wafer w, and the reactants and gases not used in the process will be transferred to the exhaust hole The exhaust unit. As described above, the thin film having high impurities, excellent electrical characteristics, and excellent step coverage can be deposited on the wafer in a highly efficient manner using the reaction gases. In addition, CVD process or 17 1223328 ALD process can also be performed at high temperature. Although the present invention has been shown and described in detail with reference to the preferred embodiments thereof, those skilled in the art will understand that the invention Various changes are made to the details and details. Brief description of the drawings (1) The detailed description of the preferred embodiment of the drawings, and reference to the accompanying drawings, can further understand the above-mentioned objects and advantages of the present invention, of which: FIG. 1 is used for A cross-sectional view of a device for depositing a thin film on a wafer; FIGS. 2 and 3 are exploded perspective views of a top plate and a nozzle of FIG. 1, wherein FIG. 2 is a top view and FIG. 3 is a bottom view; and FIGS. 4 and 5 are first diffusions of FIG. A perspective view of the plate, wherein FIG. 4 is a top view and FIG. 5 is a bottom view; FIGS. 6 and 7 are perspective views of the second diffusion plate of FIG. 1, wherein FIG. 6 is a top view and FIG. 7 is a bottom view; and FIGS. 8 and 9 are FIG. A perspective view of the third diffuser plate, wherein FIG. 8 is a top view and FIG. 9 is a bottom view; FIG. 10 is a perspective view of the reaction gas introducer of FIG. 1; and FIGS. 11 and 12 are built in the reaction gas introducer of FIG. 10. 11 is a top view and FIG. 12 is a bottom view; and FIG. 13 is a plan view of a cooling channel formed in the top plate of FIG. 1. (II) Component symbol description 18 1223328 1 110 Reactor block 2 w Wafer 3 115 Wafer transfer hole 4 120 Wafer block 5 130 Top plate 6 131 Mounting hole 7 132 Tray distribution hole 8 133 Cooling channel 9 133a Inside Cooling channel 10 133b Outside cooling channel 11 140 Mouth nozzle 12 141 First diffusion plate 13 142 Channel 14 142a? 142b First distribution hole 15 143 Installation line 16 144 Second diffusion plate 17 145 Second diffusion area 18 145a Second distribution Hole 19 147 Third diffusion plate 20 148 Third diffusion area 21 149a First spray hole 22 149b Second spray hole 23 151 First supply line 24 156 Second supply line
19 1223328 25 26 27 28 29 30 31 32 33 160 反應氣體引入器 161 氣體引入管 162 透氣孔 163 第一擴散器 163a 第一擴散器163的開孔 166 擴散反應室套蓋 167 擴散反應室 168 第二擴散器 168a 第二擴散器168的開孔19 1223328 25 26 27 28 29 30 31 32 33 160 Reaction gas introducer 161 Gas introduction tube 162 Ventilation hole 163 First diffuser 163a Opening of first diffuser 163 166 Diffusion reaction chamber cover 167 Diffusion reaction chamber 168 Second Diffuser 168a Opening of second diffuser 168
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