CN106611733B - 一种多进口空腔加热支撑架 - Google Patents

一种多进口空腔加热支撑架 Download PDF

Info

Publication number
CN106611733B
CN106611733B CN201510694985.7A CN201510694985A CN106611733B CN 106611733 B CN106611733 B CN 106611733B CN 201510694985 A CN201510694985 A CN 201510694985A CN 106611733 B CN106611733 B CN 106611733B
Authority
CN
China
Prior art keywords
support frame
hole
boss
diversion trench
cover plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201510694985.7A
Other languages
English (en)
Other versions
CN106611733A (zh
Inventor
吕光泉
吴凤丽
郑英杰
张建
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Piotech Inc
Original Assignee
Piotech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Piotech Inc filed Critical Piotech Inc
Priority to CN201510694985.7A priority Critical patent/CN106611733B/zh
Publication of CN106611733A publication Critical patent/CN106611733A/zh
Application granted granted Critical
Publication of CN106611733B publication Critical patent/CN106611733B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

一种多进口空腔加热支撑架，主要解决工艺过程中加热盘温升过快降温慢而导致半导体镀膜设备热交换效率及产能较低，晶圆温度不够均匀致使薄膜失败的问题，本发明提供一种多进口空腔加热支撑架，该加热支撑架包括支撑架上盘体，支撑架下盘体，导流槽盖板，陶瓷柱及陶瓷柱安装螺母。本发明的加热支撑架通过循环媒介的自动控温，可以实现对加热支撑架温度的自动调节，能够精确的控制加热支撑架的温度。

Description

一种多进口空腔加热支撑架
技术领域
本发明涉及一种多进口空腔加热支撑架，属于半导体薄膜沉积应用及制造技术领域。
背景技术
半导体设备在进行沉积反应时往往需要使晶圆及腔室加热或维持在沉积反应所需要的温度，所以加热盘必需具备加热结构以满足给晶圆预热的目的。大多数半导体薄膜沉积设备，在沉积过程中还会有等离子体参与沉积反应，因等离子体能量的释放以及化学气体间反应的能量释放，加热盘及晶圆的温度会随着射频及工艺时间的增加温度会不断的上升，如果在进行相同温度下的工艺，需要等待加热盘降到相同的温度后才能进行，这样会耗费大量的时间，设备的产能相对比较低。如果晶圆和加热盘的温度升温过快，晶圆和加热盘的温度会超出薄膜所需承受的温度，致使薄膜失败。
为了解决工艺过程中加热盘温升过快降温慢而导致半导体镀膜设备热交换效率及产能较低，晶圆温度不够均匀致使薄膜失败的问题，我们需要有能够自动调温的装置，来保证加热盘的温度。
发明内容
本发明以解决上述问题为目的，提供了一种多进口空腔加热支撑架，该支撑架采用支撑架上盘体与支撑架下盘体形成的空腔，并且利用媒介的循环进行冷却和加热，对支撑架进行温度的控制。
为实现上述目的，本发明采用下述技术方案：
一种多进口空腔加热支撑架，该加热支撑架包括支撑架上盘体，支撑架下盘体，导流槽盖板，陶瓷柱及陶瓷柱安装螺母；所述支撑架上盘体的下盘面设有凸台A，凸台B，陶瓷柱孔及热电偶孔，凸台A与凸台B形成环形沟槽，凸台B上分布有三个导流口，为媒介流入腔体内提供通道；所述陶瓷柱孔与热电偶孔的外围分别设有凸台C和凸台D；所述支撑架下盘体的上盘面上与上述陶瓷柱孔相对应的位置设有螺纹孔，在上盘面靠近中心的位置设有媒介入口、媒介出口及与上述热电偶孔位置相对应的热电偶安装螺纹孔，还设有以媒介入口为中心分别向支撑架下盘体外围开有的三个导流槽，每个导流槽的两侧分别有凸台E，用于承载导流槽盖板，每个导流槽的外端还设有终端孔，终端孔的位置在上述环形沟槽对应的范围内；所述导流槽盖板的外端设有与导流槽终端孔相对应的导流槽盖板端孔；
所述支撑架下盘体通过导流槽与导流槽盖板焊接后再与支撑架上盘体通过真空钎焊进行焊接，然后将陶瓷柱安装在陶瓷柱孔内，再采用陶瓷柱安装螺母通过螺纹孔对陶瓷柱进行固定形成空腔。
所述凸台A、凸台B、凸台C与凸台D的高度相等。
本发明的有益效果及特点在于：
本发明的多进口空腔加热支撑架，通过循环媒介的自动控温，可以实现对加热支撑架温度的自动调节，能够精确的控制加热支撑架的温度。
附图说明
图1为本发明的多进口空腔加热支撑架的结构示意图；
图2为本发明支撑架上盘体的下盘面的结构示意图；
图3为本发明支撑架下盘体的上盘面的结构示意图；
图4为办发明的导流槽盖板的结构示意图。
具体实施方式
下面结合实施例进一步对本发明进行详细说明，但发明保护内容不局限于所述实施例：
如图1-4所示，一种多进口空腔加热支撑架，该加热支撑架包括支撑架上盘体1，陶瓷柱2，导流槽盖板3，支撑架下盘体4及陶瓷柱安装螺母5；所述支撑架上盘体1的下盘面设有凸台A21，凸台B22，陶瓷柱孔7及热电偶孔9，凸台A21与凸台B22形成环形沟槽8，凸台B22上分布有三个导流口10，为媒介流入腔体内提供通道；所述陶瓷柱孔7与热电偶孔9的外围分别设有凸台C23和凸台D24；所述支撑架下盘体4的上盘面上与上述陶瓷柱孔7相对应的位置设有螺纹孔6，在上盘面靠近中心的位置设有媒介入口12、媒介出口11及与上述热电偶孔9位置相对应的热电偶安装螺纹孔15，还设有以媒介入口12为中心分别向支撑架下盘体4外围开有的三个导流槽13，每个导流槽13的两侧分别有凸台E31，用于承载导流槽盖板3，每个导流槽13的外端还设有终端孔14，终端孔14的位置在上述环形沟槽8对应的范围内；所述导流槽盖板3的外端设有与终端孔14相对应的导流槽盖板端孔16；
所述支撑架下盘体4上的导流槽13与导流槽盖板3焊接后再与支撑架上盘体1通过真空钎焊进行焊接，然后将陶瓷柱2安装在陶瓷柱孔7内，再采用陶瓷柱安装螺母5通过螺纹孔6对陶瓷柱2进行固定形成空腔。所述凸台A21、凸台B22、凸台C23与凸台D24的高度相等。
使用时，支撑架上盘体1与支撑架下盘体4形成空腔，然后将媒介通过媒介入口12通入，经过导流槽13，由导流槽终端孔14流入环形沟槽8中，再由导流口10流入空腔中，然后由媒介出口11流出，利用媒介对该加热支撑架进行冷却或加热，利用媒介的循环，对加热支撑架进行温度的控制。

Claims (2)

1.一种多进口空腔加热支撑架，其特征在于，该加热支撑架包括支撑架上盘体，支撑架下盘体，导流槽盖板，陶瓷柱及陶瓷柱安装螺母；所述支撑架上盘体的下盘面设有凸台A，凸台B，陶瓷柱孔及热电偶孔，凸台A与凸台B形成环形沟槽，凸台B上分布有三个导流口，为媒介流入腔体内提供通道；所述陶瓷柱孔与热电偶孔的外围分别设有凸台C和凸台D；所述支撑架下盘体的上盘面上与上述陶瓷柱孔相对应的位置设有螺纹孔，在上盘面靠近中心的位置设有媒介入口、媒介出口及与上述热电偶孔位置相对应的热电偶安装螺纹孔，还设有以媒介入口为中心分别向支撑架下盘体外围开有的三个导流槽，每个导流槽的两侧分别有凸台E，用于承载导流槽盖板，每个导流槽的外端还设有终端孔，终端孔的位置在上述环形沟槽对应的范围内；所述导流槽盖板的外端设有与导流槽终端孔相对应的导流槽盖板端孔；
所述支撑架下盘体通过导流槽与导流槽盖板焊接后再与支撑架上盘体通过真空钎焊进行焊接，然后将陶瓷柱安装在陶瓷柱孔内，再采用陶瓷柱安装螺母通过螺纹孔对陶瓷柱进行固定形成空腔。
2.如权利要求1所述的一种多进口空腔加热支撑架，其特征在于，所述凸台A、凸台B、凸台C与凸台D的高度相等。
CN201510694985.7A 2015-10-22 2015-10-22 一种多进口空腔加热支撑架 Active CN106611733B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510694985.7A CN106611733B (zh) 2015-10-22 2015-10-22 一种多进口空腔加热支撑架

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510694985.7A CN106611733B (zh) 2015-10-22 2015-10-22 一种多进口空腔加热支撑架

Publications (2)

Publication Number Publication Date
CN106611733A CN106611733A (zh) 2017-05-03
CN106611733B true CN106611733B (zh) 2020-07-31

Family

ID=58613077

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510694985.7A Active CN106611733B (zh) 2015-10-22 2015-10-22 一种多进口空腔加热支撑架

Country Status (1)

Country Link
CN (1) CN106611733B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107557743B (zh) * 2017-08-24 2019-06-11 中国科学院长春光学精密机械与物理研究所 大口径SiC反射镜镀膜支撑装置
CN110379729B (zh) * 2018-04-13 2022-10-21 北京北方华创微电子装备有限公司 加热基座及半导体加工设备

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201309964Y (zh) * 2008-12-05 2009-09-16 苏明宗 一种加热器的改良结构
CN101603778A (zh) * 2009-05-07 2009-12-16 北京航空航天大学 喷泉式冷却水循环的冷坩埚
CN201954548U (zh) * 2011-02-28 2011-08-31 陈顺发 一种上进风式灶具燃烧器
CN203845857U (zh) * 2014-04-25 2014-09-24 康那香企业股份有限公司 散气盘
CN104878370A (zh) * 2015-05-29 2015-09-02 沈阳拓荆科技有限公司 一种分体式可控温加热盘结构
CN104911544A (zh) * 2015-06-25 2015-09-16 沈阳拓荆科技有限公司 控温盘
CN104988472A (zh) * 2015-06-25 2015-10-21 沈阳拓荆科技有限公司 半导体镀膜设备控温系统

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201309964Y (zh) * 2008-12-05 2009-09-16 苏明宗 一种加热器的改良结构
CN101603778A (zh) * 2009-05-07 2009-12-16 北京航空航天大学 喷泉式冷却水循环的冷坩埚
CN201954548U (zh) * 2011-02-28 2011-08-31 陈顺发 一种上进风式灶具燃烧器
CN203845857U (zh) * 2014-04-25 2014-09-24 康那香企业股份有限公司 散气盘
CN104878370A (zh) * 2015-05-29 2015-09-02 沈阳拓荆科技有限公司 一种分体式可控温加热盘结构
CN104911544A (zh) * 2015-06-25 2015-09-16 沈阳拓荆科技有限公司 控温盘
CN104988472A (zh) * 2015-06-25 2015-10-21 沈阳拓荆科技有限公司 半导体镀膜设备控温系统

Also Published As

Publication number Publication date
CN106611733A (zh) 2017-05-03

Similar Documents

Publication Publication Date Title
WO2016206542A1 (zh) 半导体镀膜设备控温系统
US20110180233A1 (en) Apparatus for controlling temperature uniformity of a showerhead
US20150332942A1 (en) Pedestal fluid-based thermal control
CN104911544A (zh) 控温盘
CN104878370A (zh) 一种分体式可控温加热盘结构
JP2010541239A5 (zh)
US20230230858A1 (en) Heating device and semiconductor processing apparatus
CN103526186B (zh) 一种用于mocvd反应器的晶片载盘及mocvd反应器
US20110180243A1 (en) Apparatus for controlling temperature uniformity of a substrate
CN106611733B (zh) 一种多进口空腔加热支撑架
CN110556319B (zh) 加热器、半导体加工腔室及加工设备
CN104835762A (zh) 一种窗花形表面结构的可控温加热盘
CN113604786B (zh) 半导体设备的加热器及半导体设备
CN104928651A (zh) 一种温流室出气的可控温加热盘
CN104835761A (zh) 一种边缘出气的可控温加热盘
CN104835763B (zh) 一种花瓣形表面结构的可控温加热盘
CN104835764A (zh) 一种蜘蛛网形表面结构的可控温加热盘
CN104576484A (zh) 半导体设备中的托盘结构
CN111383885B (zh) 一种能提高控温精度的基片安装台及等离子体处理设备
CN106609354A (zh) 一种半导体镀膜设备可控温基台
CN103594553B (zh) 一种阵列式硅片装载靶盘
CN106637139A (zh) 一种稳流室空腔可控温基体托架结构
CN106637132B (zh) 循环媒介自动控温、热传导气体传导温度的晶圆反应台
CN105047543A (zh) 一种涡旋形表面结构的可控温加热盘
CN106609364A (zh) 带有循环媒介自动控温结构的薄膜沉积设备加热底盘

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP03 Change of name, title or address

Address after: No.900 Shuijia, Hunnan District, Shenyang City, Liaoning Province

Patentee after: Tuojing Technology Co.,Ltd.

Address before: 110179 3rd floor, No.1-1 Xinyuan street, Hunnan New District, Shenyang City, Liaoning Province

Patentee before: PIOTECH Co.,Ltd.

CP03 Change of name, title or address