JP5726663B2 - ナノシリコンカーバイドコーティングを用いる炭素材料の界面強化方法 - Google Patents
ナノシリコンカーバイドコーティングを用いる炭素材料の界面強化方法 Download PDFInfo
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- 239000003575 carbonaceous material Substances 0.000 title claims description 54
- 238000000034 method Methods 0.000 title claims description 31
- 239000005543 nano-size silicon particle Substances 0.000 title claims description 15
- 238000000576 coating method Methods 0.000 title description 10
- 239000011248 coating agent Substances 0.000 title description 9
- 238000005728 strengthening Methods 0.000 title description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 61
- 229910052782 aluminium Inorganic materials 0.000 claims description 57
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 51
- 239000002041 carbon nanotube Substances 0.000 claims description 47
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 47
- 239000000203 mixture Substances 0.000 claims description 21
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 18
- 229910018540 Si C Inorganic materials 0.000 claims description 17
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims description 13
- 238000000498 ball milling Methods 0.000 claims description 13
- 230000006698 induction Effects 0.000 claims description 13
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 4
- 239000008393 encapsulating agent Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 8
- 239000011863 silicon-based powder Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 238000000635 electron micrograph Methods 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 238000003801 milling Methods 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000011856 silicon-based particle Substances 0.000 description 5
- 238000002411 thermogravimetry Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 4
- 239000002048 multi walled nanotube Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229920000049 Carbon (fiber) Polymers 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000004917 carbon fiber Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 101000836529 Brevibacillus brevis Alpha-acetolactate decarboxylase Proteins 0.000 description 1
- 102100027269 Fructose-bisphosphate aldolase C Human genes 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000002134 carbon nanofiber Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/984—Preparation from elemental silicon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
- C22C1/1036—Alloys containing non-metals starting from a melt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
- C22C1/1084—Alloys containing non-metals by mechanical alloying (blending, milling)
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0084—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ carbon or graphite as the main non-metallic constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
- C22C2026/002—Carbon nanotubes
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- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Carbon And Carbon Compounds (AREA)
- Manufacture Of Alloys Or Alloy Compounds (AREA)
- Chemical Or Physical Treatment Of Fibers (AREA)
Description
シリコン粉末のサイズをボールミルを用いて調節するために、カーボンナノチューブとして、多層のカーボンナノチューブであって、厚さ10〜20nm、及び長さ10から20μm(Hanwa Nanotech、CM95)のものを使用した。シリコン粉末はAldrichから購入した。シリコン粉末及びカーボンナノチューブをSKD11製のステンレスボールミル容器(Taemyong Science)に導入し、アルミニウムの酸化を防止するために不活性ガス(アルゴン)でパージした。カーボンナノチューブは30重量%用いた。ボールミリングとして、ミリングを300rpmで10時間実施した。ここで、ミリングに使用したボールはジルコニアボール(Daehan、DH.ML1032)で、直径5mmであった。
実施例1から得られたシリコンナノ粉末及びカーボンナノチューブをボールミル容器に導入した。比率は、3:5、6:5、12:5及び20:5であった。酸化を防止するために不活性ガス(アルゴン)でパージした。ボールミリングは、230rpmで1時間実施された。図4は、6:5比率で1時間ミリングした後の10,000x倍で観察された電子顕微鏡写真である。シリコンナノ粉末及びカーボンナノチューブが均一に混合されていることが分かる。
実施例2で混合された試験サンプルのそれぞれをグラファイト坩堝(Dongbang Carbon)に導入し、高周波誘導炉(Eltek)を通じて真空下で1300℃で1時間、加熱処理を行った。図5aは、シリコンナノ粒子及びカーボンナノチューブの3:5比率での混合物の加熱処理後の100,000x倍で観察された電子顕微鏡写真である。図5b、5c及び5dは、ぞれぞれ、比率6:5、12:5及び20:5での、シリコンナノ粒子及びカーボンナノチューブ混合物の加熱処理後の100,000x倍で観察された電子顕微鏡写真である。シリコンナノ粒子がカーボンナノチューブの表面を均一にコーティングしていることが分かる。
上で製造したカーボンナノチューブ(6:5)(Si−C共有結合及びコーティング)及びアルミニウム粉末をボールミル容器に導入し、不活性ガス(アルゴン)でパージしてアルミニウムの酸化を防止した。ボールミリングを230rpmで6時間実施した(韓国特許出願No10−2007−0135267)。ここで、Si−C共有結合及びコーティングを持つカーボンナノチューブの濃度は5重量%であった。図8は、ボールミリング後にデジタルカメラ(ニコンクールピクス−3700)で得た写真である。カーボンナノチューブがアルミニウムに被包されていることが分かる。
実施例4で製造された、5重量%のカーボンナノチューブを含むアルミニウムに被包されたカーボンナノチューブを溶融し、ALDC12アルミニウムインゴッド(Woosin metal Co ltd KSD 23321)にキャストし、インペラ攪拌した。これにより1重量%のカーボンナノチューブを含むアルミニウムインゴッドが得られた。インペラはグラファイト製であり、攪拌は500rpmで真空下650℃〜700℃で20分間実施した。
Claims (6)
- (a)シリコンナノ粒子と炭素材料を混合してシリコン−炭素材料混合物を製造するステップと、
(b)前記シリコン−炭素材料混合物を、高周波誘導加熱処理してSi−C共有結合を形成するステップと、
(c)前記Si−C共有結合をもって形成された炭素材料とアルミニウムとを混合してアルミニウム中に前記炭素材料を被包し、その後ボールミリングするステップと、
(d)前記炭素材料を混合したアルミニウムにさらにアルミニウムを添加し、その後溶融するステップとを含み、
前記炭素材料がカーボンナノチューブであることを特徴とする、
炭素材料−アルミニウム複合材の製造方法。 - 請求項1に記載の方法であり、前記シリコンナノ粒子がボールミルで製造される、炭素材料−アルミニウム複合材の製造方法。
- 請求項1に記載の方法であり、前記シリコン−炭素材料混合物がボールミリングで混合される、炭素材料−アルミニウム複合材の製造方法。
- 請求項1に記載の方法であり、前記Si−C共有結合をもって形成された炭素材料が高周波誘導加熱により形成される、炭素材料−アルミニウム複合材の製造方法。
- 請求項1に記載の方法であり、前記炭素材料と混合された前記アルミニウムが、ボールミリングで被包体に形成される、方法。
- 請求項1に記載の方法であり、前記炭素材料−アルミニウム複合材は、被含体になった混合体に更にアルミニウムを添加し、溶解方法によって形成されたことを特徴とする、請求項1に記載の炭素材料−アルミニウム複合材の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020110015577A KR101242529B1 (ko) | 2011-02-22 | 2011-02-22 | 나노 실리콘카바이드 코팅을 이용한 탄소재료 계면강화 방법 |
KR10-2011-0015577 | 2011-02-22 |
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JP2012171861A JP2012171861A (ja) | 2012-09-10 |
JP5726663B2 true JP5726663B2 (ja) | 2015-06-03 |
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JP2011162867A Active JP5726663B2 (ja) | 2011-02-22 | 2011-07-26 | ナノシリコンカーバイドコーティングを用いる炭素材料の界面強化方法 |
Country Status (5)
Country | Link |
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US (1) | US8673053B2 (ja) |
EP (1) | EP2492241A1 (ja) |
JP (1) | JP5726663B2 (ja) |
KR (1) | KR101242529B1 (ja) |
CN (1) | CN102642833A (ja) |
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KR100907334B1 (ko) * | 2008-01-04 | 2009-07-13 | 성균관대학교산학협력단 | 알루미늄과 탄소재료 간의 공유결합을 형성하는 방법, 알루미늄과 탄소재료 복합체를 제조하는 방법 및 그 방법에 의하여 제조된 알루미늄과 탄소재료 복합체 |
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KR20100072826A (ko) * | 2008-12-22 | 2010-07-01 | 제일모직주식회사 | 금속 카바이드의 제조 방법 |
KR101173847B1 (ko) * | 2009-02-05 | 2012-08-14 | 주식회사 대유신소재 | 탄소나노튜브를 이용하여 제조된 나노입자 및 그 제조방법 |
JP5193096B2 (ja) * | 2009-03-04 | 2013-05-08 | 日精樹脂工業株式会社 | カーボンナノ複合金属材料の製造方法 |
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- 2011-07-26 JP JP2011162867A patent/JP5726663B2/ja active Active
- 2011-08-25 CN CN2011102456142A patent/CN102642833A/zh active Pending
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KR101242529B1 (ko) | 2013-03-12 |
US8673053B2 (en) | 2014-03-18 |
US20120210823A1 (en) | 2012-08-23 |
EP2492241A1 (en) | 2012-08-29 |
JP2012171861A (ja) | 2012-09-10 |
KR20120096269A (ko) | 2012-08-30 |
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