JP5723377B2 - 半導体のためのエッチングプロセス - Google Patents

半導体のためのエッチングプロセス Download PDF

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Publication number
JP5723377B2
JP5723377B2 JP2012537938A JP2012537938A JP5723377B2 JP 5723377 B2 JP5723377 B2 JP 5723377B2 JP 2012537938 A JP2012537938 A JP 2012537938A JP 2012537938 A JP2012537938 A JP 2012537938A JP 5723377 B2 JP5723377 B2 JP 5723377B2
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JP
Japan
Prior art keywords
etching
semiconductor
photoresist
semiconductors
reactive
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Expired - Fee Related
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JP2012537938A
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English (en)
Japanese (ja)
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JP2013510442A5 (de
JP2013510442A (ja
Inventor
マイケル エー． ハーセ，
マイケル エー． ハーセ，
テリー エル． スミス，
テリー エル． スミス，
ジュン‐イン ツァン，
ジュン‐イン ツァン，
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2013510442A publication Critical patent/JP2013510442A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
JP2012537938A 2009-11-09 2010-11-02 半導体のためのエッチングプロセス Expired - Fee Related JP5723377B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25929909P 2009-11-09 2009-11-09
US61/259,299 2009-11-09
PCT/US2010/055096 WO2011056783A2 (en) 2009-11-09 2010-11-02 Etching process for semiconductors

Publications (3)

Publication Number Publication Date
JP2013510442A JP2013510442A (ja) 2013-03-21
JP2013510442A5 JP2013510442A5 (de) 2013-08-29
JP5723377B2 true JP5723377B2 (ja) 2015-05-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012537938A Expired - Fee Related JP5723377B2 (ja) 2009-11-09 2010-11-02 半導体のためのエッチングプロセス

Country Status (7)

Country Link
US (1) US8765611B2 (de)
EP (1) EP2499663A2 (de)
JP (1) JP5723377B2 (de)
KR (1) KR20120095411A (de)
CN (1) CN102893378A (de)
TW (1) TW201135832A (de)
WO (1) WO2011056783A2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5710433B2 (ja) * 2011-09-13 2015-04-30 株式会社東芝 成膜装置のクリーニング方法および成膜装置
FR2984769B1 (fr) * 2011-12-22 2014-03-07 Total Sa Procede de texturation de la surface d'un substrat de silicium, substrat structure et dispositif photovoltaique comportant un tel substrat structure
US8883028B2 (en) 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
EP2922103B1 (de) 2012-08-21 2017-04-05 Oji Holdings Corporation Substrat für lichtemittierende Halbleiterelemente und lichtemittierendes Halbleiterelement
WO2014051909A1 (en) * 2012-09-25 2014-04-03 Applied Materials, Inc. Chamber clean with in gas heating source
CN103901516B (zh) * 2012-12-26 2016-06-15 清华大学 光栅的制备方法
US8941145B2 (en) * 2013-06-17 2015-01-27 The Boeing Company Systems and methods for dry etching a photodetector array
US9012305B1 (en) * 2014-01-29 2015-04-21 Applied Materials, Inc. Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate non-reactive post mask-opening clean
JP6871706B2 (ja) 2016-09-30 2021-05-12 日機装株式会社 半導体発光素子の製造方法
JPWO2021095608A1 (de) * 2019-11-12 2021-05-20
CN113823992B (zh) * 2021-09-14 2022-11-11 苏州长瑞光电有限公司 半导体器件制造方法及半导体器件
CN115343788B (zh) * 2022-08-18 2024-03-15 上海交通大学 基于循环刻蚀工艺的石英微透镜制备方法及石英微透镜

Family Cites Families (23)

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Publication number Priority date Publication date Assignee Title
JPH0294522A (ja) * 1988-09-30 1990-04-05 Toshiba Corp ドライエッチング方法
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
DE69320963T2 (de) * 1992-06-22 1999-05-12 Lam Res Corp Plasmareinigungsverfahren zum entfernen von rückständen in einer plasmabehandlungskammer
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
JPH07335620A (ja) * 1994-06-09 1995-12-22 Sony Corp Ｉｉ−ｖｉ族化合物半導体の選択的ドライエッチング方法
EP0774772A1 (de) 1995-11-17 1997-05-21 Applied Materials, Inc. Verfahren zum physikalischen Ätzen von elektrisch leitenden Siliziumoberflächen
DE19736370C2 (de) * 1997-08-21 2001-12-06 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silizium
KR100269323B1 (ko) * 1998-01-16 2000-10-16 윤종용 반도체장치의백금막식각방법
IT1301840B1 (it) * 1998-06-30 2000-07-07 Stmicroelettronica S R L Metodo per incrementare la seletttvita' tra un film di materialefotosensibile ed uno strato da sottoporre ed incisione in processi
DE19919832A1 (de) * 1999-04-30 2000-11-09 Bosch Gmbh Robert Verfahren zum anisotropen Plasmaätzen von Halbleitern
SE9903213D0 (sv) * 1999-06-21 1999-09-10 Carl Fredrik Carlstroem Dry etching process of compound semiconductor materials
US6352081B1 (en) * 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
US6347874B1 (en) * 2000-02-16 2002-02-19 3M Innovative Properties Company Wedge light extractor with risers
JP3776824B2 (ja) * 2002-04-05 2006-05-17 株式会社東芝 半導体発光素子およびその製造方法
DE10247913A1 (de) * 2002-10-14 2004-04-22 Robert Bosch Gmbh Plasmaanlage und Verfahren zum anisotropen Einätzen von Strukturen in ein Substrat
US7238970B2 (en) * 2003-10-30 2007-07-03 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
JP2005353972A (ja) 2004-06-14 2005-12-22 Canon Inc プラズマ処理方法
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7575007B2 (en) * 2006-08-23 2009-08-18 Applied Materials, Inc. Chamber recovery after opening barrier over copper
WO2008083188A2 (en) 2006-12-29 2008-07-10 3M Innovative Properties Company Led light source with converging extractor in an optical element
US8179034B2 (en) * 2007-07-13 2012-05-15 3M Innovative Properties Company Light extraction film for organic light emitting diode display and lighting devices
CN101472455A (zh) 2007-12-29 2009-07-01 3M创新有限公司 电磁屏蔽衬垫和用于填充电磁屏蔽系统中的间隙的方法
CN102473817A (zh) * 2009-06-30 2012-05-23 3M创新有限公司 无镉再发光半导体构造

Also Published As

Publication number Publication date
CN102893378A (zh) 2013-01-23
KR20120095411A (ko) 2012-08-28
TW201135832A (en) 2011-10-16
US20110108956A1 (en) 2011-05-12
US8765611B2 (en) 2014-07-01
WO2011056783A3 (en) 2011-07-28
WO2011056783A2 (en) 2011-05-12
EP2499663A2 (de) 2012-09-19
JP2013510442A (ja) 2013-03-21

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