JP5719430B2 - グラフェン・チャネルに基づく装置およびその製作方法 - Google Patents
グラフェン・チャネルに基づく装置およびその製作方法 Download PDFInfo
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- JP5719430B2 JP5719430B2 JP2013510543A JP2013510543A JP5719430B2 JP 5719430 B2 JP5719430 B2 JP 5719430B2 JP 2013510543 A JP2013510543 A JP 2013510543A JP 2013510543 A JP2013510543 A JP 2013510543A JP 5719430 B2 JP5719430 B2 JP 5719430B2
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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Description
Claims (9)
- 半導体装置であって、
第1の基板上に形成される少なくとも1つのグラフェン・チャネル、前記グラフェン・チャネルを囲む第1の酸化物層、ならびに前記第1の酸化物層を通って延在する前記グラフェン・チャネルに対するソースおよびドレイン・コンタクトを有する第1のウエハと、
第2の基板に形成される相補型金属酸化物半導体(CMOS)装置層、前記CMOS装置層を囲む第2の酸化物層、および前記第2の酸化物層を通って延在する前記CMOS装置層に対する複数のコンタクトを有する第2のウエハであって、前記第1のウエハおよび前記第2のウエハは前記第1および第2の酸化物層の間の酸化物対酸化物ボンディングによってともに接合される、第2のウエハと
を含み、前記CMOS装置層に対する前記コンタクトの1つまたはそれ以上は、前記グラフェン・チャネルに対する前記ソースおよびドレイン・コンタクトと接触しており、前記CMOS装置層に対する前記コンタクトの他の1つまたはそれ以上は、前記グラフェン・チャネルに対するゲート・コンタクトである、装置。 - 前記CMOS装置層は1つまたはそれ以上のCMOS配線、構造および装置を含む、請求項1に記載の装置。
- 前記第1の基板は、絶縁ウエハ、絶縁上層を有するウエハ、または炭化ケイ素ウエハを含む、請求項1に記載の装置。
- 前記第2の基板は、シリコン・オン・インシュレータ・ウエハまたはバルク・シリコン・ウエハを含む、請求項1に記載の装置。
- 前記グラフェン・チャネルに対する前記ソースおよびドレイン・コンタクトならびに前記CMOS装置層に対する前記コンタクトの各々は銅を含み、前記第1のウエハおよび前記第2のウエハはさらに、前記グラフェン・チャネルに対する前記ソースおよびドレイン・コンタクトと、前記CMOS装置層に対する前記コンタクトの1つまたはそれ以上との間の銅対銅ボンディングによってともに接合される、請求項1に記載の装置。
- 前記第1のウエハおよび前記第2のウエハは向かい合わせの向きでともに接合される、請求項1に記載の装置。
- 半導体装置を製作する方法であって、
第1の基板上に形成される少なくとも1つのグラフェン・チャネル、前記グラフェン・チャネルを囲む第1の酸化物層、ならびに前記第1の酸化物層を通って延在する前記グラフェン・チャネルに対するソースおよびドレイン・コンタクトを有する第1のウエハを形成するステップと、
第2の基板に形成されるCMOS装置層、前記CMOS装置層を囲む第2の酸化物層、および前記第2の酸化物層を通って延在する前記CMOS装置層に対する複数のコンタクトを有する第2のウエハを形成するステップと、
前記第1のウエハおよび前記第2のウエハを前記第1および第2の酸化物層の間の酸化物対酸化物ボンディングによってともに接合することによって、前記CMOS装置層に対する前記コンタクトの1つまたはそれ以上が前記グラフェン・チャネルに対する前記ソースおよびドレイン・コンタクトと接触し、前記CMOS装置層に対する前記コンタクトの他の1つまたはそれ以上が前記グラフェン・チャネルに対するゲート・コンタクトとなるようにするステップと
を含む、方法。 - 前記第1のウエハまたは前記第2のウエハの一方を上下反転させることによって、前記第1のウエハまたは前記第2のウエハの他方との向かい合わせのボンディングを可能にするステップをさらに含む、請求項7に記載の方法。
- トランジスタ装置であって、
基板と、
前記基板上に形成されるソースおよびドレイン・コンタクトと、
前記基板上に形成されて前記ソースおよびドレイン・コンタクトを接続するグラフェン・チャネルと、
誘電体によって前記グラフェン・チャネルから分離されている前記グラフェン・チャネル上のゲート・コンタクトであって、前記ゲート・コンタクトは前記ソースおよびドレイン・コンタクトとオーバーラップしない位置にあり、前記ゲート・コンタクトと前記ソースおよびドレイン・コンタクトとの間に前記グラフェン・チャネルの露出部分を残し、前記グラフェン・チャネルの前記露出部分にはジアゾニウム塩を含むp型のドーパントがドープされる、ゲート・コンタクトと
を含む、装置。
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US12/783,676 US8445320B2 (en) | 2010-05-20 | 2010-05-20 | Graphene channel-based devices and methods for fabrication thereof |
US12/783,676 | 2010-05-20 | ||
PCT/EP2011/056581 WO2011144423A1 (en) | 2010-05-20 | 2011-04-26 | Graphene channel-based devices and methods for fabrication thereof |
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KR101156620B1 (ko) * | 2009-04-08 | 2012-06-14 | 한국전자통신연구원 | 그라핀 채널층을 가지는 전계 효과 트랜지스터 |
US8895352B2 (en) * | 2009-06-02 | 2014-11-25 | International Business Machines Corporation | Method to improve nucleation of materials on graphene and carbon nanotubes |
US8106383B2 (en) * | 2009-11-13 | 2012-01-31 | International Business Machines Corporation | Self-aligned graphene transistor |
US8278643B2 (en) * | 2010-02-02 | 2012-10-02 | Searete Llc | Doped graphene electronic materials |
KR101813176B1 (ko) * | 2011-04-07 | 2017-12-29 | 삼성전자주식회사 | 그래핀 전자 소자 및 제조방법 |
US8772910B2 (en) * | 2011-11-29 | 2014-07-08 | International Business Machines Corporation | Doping carbon nanotubes and graphene for improving electronic mobility |
KR101919424B1 (ko) * | 2012-07-23 | 2018-11-19 | 삼성전자주식회사 | 트랜지스터 및 그 제조방법 |
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GB2493238A (en) | 2013-01-30 |
US8445320B2 (en) | 2013-05-21 |
GB201402301D0 (en) | 2014-03-26 |
KR101419631B1 (ko) | 2014-07-15 |
US20130234114A1 (en) | 2013-09-12 |
GB201208558D0 (en) | 2012-06-27 |
TW201207994A (en) | 2012-02-16 |
CN102893387B (zh) | 2015-02-25 |
US20130240839A1 (en) | 2013-09-19 |
GB2493238B (en) | 2014-04-16 |
WO2011144423A1 (en) | 2011-11-24 |
US20130302940A1 (en) | 2013-11-14 |
TWI497644B (zh) | 2015-08-21 |
US8900918B2 (en) | 2014-12-02 |
US8878193B2 (en) | 2014-11-04 |
KR20130018735A (ko) | 2013-02-25 |
GB2507686B (en) | 2014-07-16 |
JP2013531878A (ja) | 2013-08-08 |
GB2507686A (en) | 2014-05-07 |
SG184823A1 (en) | 2012-11-29 |
CN102893387A (zh) | 2013-01-23 |
US20110284818A1 (en) | 2011-11-24 |
DE112011100907B4 (de) | 2017-11-23 |
DE112011100907T5 (de) | 2013-01-03 |
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