JP5715610B2 - パターン化サンプルを検査するための光学システム及び方法 - Google Patents

パターン化サンプルを検査するための光学システム及び方法 Download PDF

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Publication number
JP5715610B2
JP5715610B2 JP2012232344A JP2012232344A JP5715610B2 JP 5715610 B2 JP5715610 B2 JP 5715610B2 JP 2012232344 A JP2012232344 A JP 2012232344A JP 2012232344 A JP2012232344 A JP 2012232344A JP 5715610 B2 JP5715610 B2 JP 5715610B2
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illumination
light
mask
collection
inspection
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JP2012232344A
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Japanese (ja)
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JP2013122445A5 (enExample
JP2013122445A (ja
Inventor
ベルラツキ ヨアフ
ベルラツキ ヨアフ
コフレル イド
コフレル イド
メシュラク ドロン
メシュラク ドロン
バルカン コビ
バルカン コビ
Original Assignee
アプライド マテリアルズ イスラエル リミテッド
アプライド マテリアルズ イスラエル リミテッド
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Publication of JP2013122445A5 publication Critical patent/JP2013122445A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8822—Dark field detection

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2012232344A 2011-12-12 2012-10-02 パターン化サンプルを検査するための光学システム及び方法 Expired - Fee Related JP5715610B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/323,591 2011-12-12
US13/323,591 US8614790B2 (en) 2011-12-12 2011-12-12 Optical system and method for inspection of patterned samples

Publications (3)

Publication Number Publication Date
JP2013122445A JP2013122445A (ja) 2013-06-20
JP2013122445A5 JP2013122445A5 (enExample) 2014-07-17
JP5715610B2 true JP5715610B2 (ja) 2015-05-07

Family

ID=48571710

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012232344A Expired - Fee Related JP5715610B2 (ja) 2011-12-12 2012-10-02 パターン化サンプルを検査するための光学システム及び方法

Country Status (4)

Country Link
US (1) US8614790B2 (enExample)
JP (1) JP5715610B2 (enExample)
KR (1) KR101460128B1 (enExample)
TW (1) TWI465714B (enExample)

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* Cited by examiner, † Cited by third party
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US9194811B1 (en) 2013-04-01 2015-11-24 Kla-Tencor Corporation Apparatus and methods for improving defect detection sensitivity
US9696264B2 (en) * 2013-04-03 2017-07-04 Kla-Tencor Corporation Apparatus and methods for determining defect depths in vertical stack memory
US9709510B2 (en) * 2014-06-26 2017-07-18 Kla-Tencor Corp. Determining a configuration for an optical element positioned in a collection aperture during wafer inspection
US9958327B2 (en) 2014-10-01 2018-05-01 Nanometrics Incorporated Deconvolution to reduce the effective spot size of a spectroscopic optical metrology device
KR20170083678A (ko) * 2016-01-08 2017-07-19 삼성전자주식회사 기판 검사 방법
JP6738644B2 (ja) 2016-04-15 2020-08-12 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 撮像装置及び撮像方法
WO2018096526A1 (en) * 2016-11-23 2018-05-31 Nova Measuring Instruments Ltd. Optical system and method for measuring parameters of patterned structures in microelectronic devices
JP6969163B2 (ja) * 2017-05-31 2021-11-24 株式会社ニコン 検査装置及び検査方法、露光装置及び露光方法、並びに、デバイス製造方法
KR102680009B1 (ko) * 2018-09-07 2024-07-03 에스케이하이닉스 주식회사 반도체 패턴 계측 장치, 이를 이용한 반도체 패턴 계측 시스템 및 방법
JP7261903B2 (ja) 2019-05-06 2023-04-20 エーエスエムエル ネザーランズ ビー．ブイ． 暗視野顕微鏡
KR20240018489A (ko) * 2021-06-09 2024-02-13 에이에스엠엘 네델란즈 비.브이. 애퍼처 아포디제이션을 갖는 구조적 조명을 이용한 레티클 입자 검출을 위한 검사 시스템
JP7763106B2 (ja) * 2022-01-12 2025-10-31 東京エレクトロン株式会社 基板検査装置、基板検査方法、及び、基板検査プログラム
CN121013974A (zh) * 2023-09-01 2025-11-25 应用材料公司 用于混合式接合缺陷检测的多向照明
US12092962B1 (en) 2023-10-26 2024-09-17 Onto Innovation Inc. Measurements of structures in presence of signal contaminations
WO2025101441A1 (en) * 2023-11-06 2025-05-15 Applied Materials Israel Ltd. Metrology using joint angle and wavelength scattering
US12306393B1 (en) * 2024-01-09 2025-05-20 Adam M. Hanninen Pixelated phase mask for chemical imaging

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682373A (ja) * 1992-09-03 1994-03-22 Nikon Corp 欠陥検査方法
JP3936959B2 (ja) * 1994-10-07 2007-06-27 株式会社ルネサステクノロジ パターンの欠陥検査方法およびその装置
JP4560900B2 (ja) * 2000-06-19 2010-10-13 ソニー株式会社 検査装置
WO2002040970A1 (en) 2000-11-15 2002-05-23 Real Time Metrology, Inc. Optical method and apparatus for inspecting large area planar objects
US6686602B2 (en) 2002-01-15 2004-02-03 Applied Materials, Inc. Patterned wafer inspection using spatial filtering
US7130039B2 (en) 2002-04-18 2006-10-31 Kla-Tencor Technologies Corporation Simultaneous multi-spot inspection and imaging
JP2004170111A (ja) * 2002-11-18 2004-06-17 Matsushita Electric Ind Co Ltd 異物検査装置
JP4260587B2 (ja) * 2003-09-18 2009-04-30 株式会社日立ハイテクノロジーズ パターン欠陥検査装置
US7295303B1 (en) * 2004-03-25 2007-11-13 Kla-Tencor Technologies Corporation Methods and apparatus for inspecting a sample
KR20090072808A (ko) * 2007-12-28 2009-07-02 주식회사 하이닉스반도체 포토마스크의 검사 장치 및 이를 이용한 검사 방법
US7973921B2 (en) * 2008-06-25 2011-07-05 Applied Materials South East Asia Pte Ltd. Dynamic illumination in optical inspection systems
KR20100001215A (ko) * 2008-06-26 2010-01-06 주식회사 하이닉스반도체 반도체 소자의 패턴 검사방법
JP5237874B2 (ja) * 2009-04-24 2013-07-17 株式会社日立ハイテクノロジーズ 欠陥検査方法および欠陥検査装置
JP5320187B2 (ja) 2009-07-01 2013-10-23 株式会社日立ハイテクノロジーズ 欠陥検査方法及び欠陥検査装置
KR101272039B1 (ko) * 2009-11-05 2013-06-07 한양대학교 산학협력단 극자외선 노광 공정용 반사형 마스크 결함 검출 장치 및 방법
JP2011180145A (ja) * 2011-03-28 2011-09-15 Hitachi High-Technologies Corp 欠陥検査装置

Also Published As

Publication number Publication date
US8614790B2 (en) 2013-12-24
TW201323862A (zh) 2013-06-16
US20130148114A1 (en) 2013-06-13
KR101460128B1 (ko) 2014-11-10
TWI465714B (zh) 2014-12-21
JP2013122445A (ja) 2013-06-20
KR20130066505A (ko) 2013-06-20

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