KR101460128B1 - 패터닝된 샘플들을 검사하기 위한 광학적 시스템 및 방법 - Google Patents

패터닝된 샘플들을 검사하기 위한 광학적 시스템 및 방법 Download PDF

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KR101460128B1
KR101460128B1 KR1020120130919A KR20120130919A KR101460128B1 KR 101460128 B1 KR101460128 B1 KR 101460128B1 KR 1020120130919 A KR1020120130919 A KR 1020120130919A KR 20120130919 A KR20120130919 A KR 20120130919A KR 101460128 B1 KR101460128 B1 KR 101460128B1
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South Korea
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light
illumination
mask
collection
inspection
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Korean (ko)
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KR20130066505A (ko
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요아브 벨라츠키
아이도 코플러
도론 메슈라흐
코비 바르칸
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어플라이드 머티리얼즈 이스라엘 리미티드
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8822—Dark field detection

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020120130919A 2011-12-12 2012-11-19 패터닝된 샘플들을 검사하기 위한 광학적 시스템 및 방법 Expired - Fee Related KR101460128B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/323,591 2011-12-12
US13/323,591 US8614790B2 (en) 2011-12-12 2011-12-12 Optical system and method for inspection of patterned samples

Publications (2)

Publication Number Publication Date
KR20130066505A KR20130066505A (ko) 2013-06-20
KR101460128B1 true KR101460128B1 (ko) 2014-11-10

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KR1020120130919A Expired - Fee Related KR101460128B1 (ko) 2011-12-12 2012-11-19 패터닝된 샘플들을 검사하기 위한 광학적 시스템 및 방법

Country Status (4)

Country Link
US (1) US8614790B2 (enExample)
JP (1) JP5715610B2 (enExample)
KR (1) KR101460128B1 (enExample)
TW (1) TWI465714B (enExample)

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US9194811B1 (en) 2013-04-01 2015-11-24 Kla-Tencor Corporation Apparatus and methods for improving defect detection sensitivity
US9696264B2 (en) * 2013-04-03 2017-07-04 Kla-Tencor Corporation Apparatus and methods for determining defect depths in vertical stack memory
US9709510B2 (en) * 2014-06-26 2017-07-18 Kla-Tencor Corp. Determining a configuration for an optical element positioned in a collection aperture during wafer inspection
US9958327B2 (en) * 2014-10-01 2018-05-01 Nanometrics Incorporated Deconvolution to reduce the effective spot size of a spectroscopic optical metrology device
KR20170083678A (ko) * 2016-01-08 2017-07-19 삼성전자주식회사 기판 검사 방법
JP6738644B2 (ja) 2016-04-15 2020-08-12 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 撮像装置及び撮像方法
US11512943B2 (en) 2016-11-23 2022-11-29 Nova Ltd Optical system and method for measuring parameters of patterned structures in micro-electronic devices
JP6969163B2 (ja) * 2017-05-31 2021-11-24 株式会社ニコン 検査装置及び検査方法、露光装置及び露光方法、並びに、デバイス製造方法
KR102680009B1 (ko) * 2018-09-07 2024-07-03 에스케이하이닉스 주식회사 반도체 패턴 계측 장치, 이를 이용한 반도체 패턴 계측 시스템 및 방법
WO2020224882A1 (en) * 2019-05-06 2020-11-12 Asml Netherlands B.V. Dark field microscope
CN117413221A (zh) * 2021-06-09 2024-01-16 Asml荷兰有限公司 用于使用具有孔径变迹的结构照射进行掩模版粒子检测的检查系统
JP7763106B2 (ja) * 2022-01-12 2025-10-31 東京エレクトロン株式会社 基板検査装置、基板検査方法、及び、基板検査プログラム
WO2025049065A1 (en) * 2023-09-01 2025-03-06 Applied Materials, Inc. Multidirectional illumination for hybrid bonding defect detection
US12092962B1 (en) 2023-10-26 2024-09-17 Onto Innovation Inc. Measurements of structures in presence of signal contaminations
WO2025101441A1 (en) * 2023-11-06 2025-05-15 Applied Materials Israel Ltd. Metrology using joint angle and wavelength scattering
US12306393B1 (en) * 2024-01-09 2025-05-20 Adam M. Hanninen Pixelated phase mask for chemical imaging

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090072808A (ko) * 2007-12-28 2009-07-02 주식회사 하이닉스반도체 포토마스크의 검사 장치 및 이를 이용한 검사 방법
KR20100001215A (ko) * 2008-06-26 2010-01-06 주식회사 하이닉스반도체 반도체 소자의 패턴 검사방법
KR20110049336A (ko) * 2009-11-05 2011-05-12 한양대학교 산학협력단 극자외선 노광 공정용 반사형 마스크 결함 검출 장치 및 방법

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JPH0682373A (ja) * 1992-09-03 1994-03-22 Nikon Corp 欠陥検査方法
JP3936959B2 (ja) * 1994-10-07 2007-06-27 株式会社ルネサステクノロジ パターンの欠陥検査方法およびその装置
JP4560900B2 (ja) * 2000-06-19 2010-10-13 ソニー株式会社 検査装置
US6630996B2 (en) 2000-11-15 2003-10-07 Real Time Metrology, Inc. Optical method and apparatus for inspecting large area planar objects
US6686602B2 (en) 2002-01-15 2004-02-03 Applied Materials, Inc. Patterned wafer inspection using spatial filtering
US7130039B2 (en) 2002-04-18 2006-10-31 Kla-Tencor Technologies Corporation Simultaneous multi-spot inspection and imaging
JP2004170111A (ja) * 2002-11-18 2004-06-17 Matsushita Electric Ind Co Ltd 異物検査装置
JP4260587B2 (ja) * 2003-09-18 2009-04-30 株式会社日立ハイテクノロジーズ パターン欠陥検査装置
US7295303B1 (en) * 2004-03-25 2007-11-13 Kla-Tencor Technologies Corporation Methods and apparatus for inspecting a sample
US7973921B2 (en) * 2008-06-25 2011-07-05 Applied Materials South East Asia Pte Ltd. Dynamic illumination in optical inspection systems
JP5237874B2 (ja) * 2009-04-24 2013-07-17 株式会社日立ハイテクノロジーズ 欠陥検査方法および欠陥検査装置
JP5320187B2 (ja) 2009-07-01 2013-10-23 株式会社日立ハイテクノロジーズ 欠陥検査方法及び欠陥検査装置
JP2011180145A (ja) * 2011-03-28 2011-09-15 Hitachi High-Technologies Corp 欠陥検査装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090072808A (ko) * 2007-12-28 2009-07-02 주식회사 하이닉스반도체 포토마스크의 검사 장치 및 이를 이용한 검사 방법
KR20100001215A (ko) * 2008-06-26 2010-01-06 주식회사 하이닉스반도체 반도체 소자의 패턴 검사방법
KR20110049336A (ko) * 2009-11-05 2011-05-12 한양대학교 산학협력단 극자외선 노광 공정용 반사형 마스크 결함 검출 장치 및 방법

Also Published As

Publication number Publication date
US20130148114A1 (en) 2013-06-13
JP5715610B2 (ja) 2015-05-07
TWI465714B (zh) 2014-12-21
US8614790B2 (en) 2013-12-24
JP2013122445A (ja) 2013-06-20
TW201323862A (zh) 2013-06-16
KR20130066505A (ko) 2013-06-20

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