JP7254177B2 - 粒子検出のためのラジアル偏光子 - Google Patents
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Description
本出願は、米国特許法第119条(e)に基づいて、Jenn-Kuen Leong、Daniel Kavaldjiev、John Fielden、およびGuoheng Zhaoを発明者とする、2018年11月14日に出願された米国仮特許出願第62/767,246号、発明の名称「PARTICLE DETECTION WITH IMPROVED RESOLUTION ON WAFER INSPECTION SYSTEM」の優先権を主張するものであり、同仮出願の全文は参照することにより本明細書に組み込まれるものとする。
Claims (19)
- 照明ビームを生成するように構成された照明源と、
照明方向に沿って軸外角度で前記照明ビームをサンプルに向けるように構成された1つまたは複数の照明光学系と、
検出器と、
前記照明ビームに応答して前記サンプルから集光された光に基づいて前記検出器上に前記サンプルの暗視野画像を生成するように構成された1つまたは複数の集光光学系と、
前記1つまたは複数の集光光学系の瞳面に位置するラジアル偏光子であって、前記瞳面における前記サンプルからの前記照明ビームの鏡面反射の位置に対応する前記瞳面の基準位置と一致するように、その頂点が前記瞳面において位置合わせされており、前記頂点に関して放射状に偏光されたラジアル偏光を除去し、前記頂点に関して接線方向に偏光された光を通過するように構成されるラジアル偏光子と、
を備えるシステム。 - 前記照明ビームが、前記サンプルにおいてp偏光される、請求項1に記載のシステム。
- 前記ラジアル偏光子が、前記サンプルの表面上の1つまたは複数の粒子によって散乱された光を通過させるように方向付けられている、請求項1に記載のシステム。
- 前記頂点が、前記1つまたは複数の集光光学系によって集光された光と関連付けられた集光範囲の外側に位置している、請求項1に記載のシステム。
- 前記ラジアル偏光子が、前記頂点に関するラジアル偏光を除去するように除去方向が連続的に変化する連続偏光子を備える、請求項1に記載のシステム。
- 前記ラジアル偏光子が、前記照明方向に垂直な方向に沿った前記1つまたは複数の集光光学系の前記瞳面に配置された複数のセグメントを含むセグメント化された偏光子であって、
各セグメントの除去軸が、前記ラジアル偏光を除去するように方向付けられている、請求項1に記載のシステム。 - 前記セグメント化された偏光子が、角度を付けてセグメント化された偏光子であって、
前記複数のセグメントが、前記瞳面において前記頂点の周囲に放射状に配置されている、請求項6に記載のシステム。 - 前記ラジアル偏光子が位置する前記瞳面に位置する位相マスクであって、前記瞳面の集光範囲の2つ以上の領域において光に別々の位相シフトをもたらして、前記サンプル上の1つまたは複数の粒子から散乱された光の点拡がり関数を再形成するように構成された位相マスクをさらに備え、
前記集光範囲が、前記1つまたは複数の集光光学系の開口数に対応し、前記ラジアル偏光子及び前記位相マスクの両方を用いて前記サンプルの前記暗視野画像が生成される、請求項1に記載のシステム。 - 前記集光範囲の前記2つ以上の領域が、前記照明方向に沿って分割された、前記集光範囲の第1の半分および前記集光範囲の第2の半分である、請求項8に記載のシステム。
- 前記位相マスクの第1のセグメントが、前記集光範囲の前記第1の半分をカバーする半波長板である、請求項9に記載のシステム。
- 前記半波長板が、前記瞳面において前記サンプル上の前記照明ビームの入射面に直交する角度に対応する方向に沿ってπ位相シフトをもたらすように方向付けられている、請求項10に記載のシステム。
- 前記位相マスクの第2のセグメントが、前記集光範囲の前記第2の半分をカバーする、伝搬方向に沿って光学的に均質な材料から形成された補償板であって、
前記補償板を通る光の光路が、選択された許容範囲内で前記半波長板を通る光の光路に対応する、請求項10に記載のシステム。 - 前記位相マスクの第2のセグメントが、前記集光範囲の前記第2の半分をカバーする開口である、請求項10に記載のシステム。
- 前記半波長板が、前記集光範囲の前記第1の半分と前記第2の半分とを通過する光の間の光路の差を少なくとも部分的に補償するように傾斜している、請求項13に記載のシステム。
- 前記集光範囲の前記2つ以上の領域が、前記照明方向および前記照明方向に直交する方向に沿って分割された、前記集光範囲の4つの4分の1である、請求項8に記載のシステム。
- 前記位相マスクが、
前記集光範囲の第1の4分の1と、前記第1の4分の1に隣接する、前記集光範囲の第2の4分の1とをカバーする第1の半波長板であって、前記瞳面において前記サンプル上の前記照明ビームの入射面における角度に対応する方向に沿ってπ遅延をもたらすように方向付けられた第1の半波長板と、
前記集光範囲の前記第2の4分の1と、前記第2の4分の1に隣接する、前記集光範囲の第3の4分の1とをカバーする第2の半波長板であって、前記瞳面において前記入射面に直交する角度に対応する方向に沿ってπ遅延をもたらすように方向付けられた第2の半波長板と、を含む、請求項15に記載のシステム。 - 前記位相マスクが、前記集光範囲の第4の4分の1をカバーする、伝搬方向に沿って光学的に均質な材料から形成された補償板をさらに含み、
前記補償板を通る光の光路が、前記第1の半波長板または前記第2の半波長板のうちの少なくとも1つを通る光の光路に対応する、請求項16に記載のシステム。 - 前記位相マスクの第2のセグメントが、前記集光範囲の第4の4分の1をカバーする開口である、請求項16に記載のシステム。
- 前記第1の半波長板と前記第2の半波長板の少なくとも1つが、前記集光範囲の前記4つの4分の1を通過する光の間の光路の差を少なくとも部分的に補償するように傾斜している、請求項16に記載のシステム。
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US20210239893A1 (en) * | 2020-01-30 | 2021-08-05 | Lawrence Livermore National Security, Llc | Polarization manipulation of free-space electromagnetic radiation fields |
US11474437B2 (en) | 2020-04-28 | 2022-10-18 | Applied Materials Israel Ltd. | Increasing signal-to-noise ratio in optical imaging of defects on unpatterned wafers |
US11525777B2 (en) * | 2020-04-28 | 2022-12-13 | Applied Materials Israel Ltd. | Optimizing signal-to-noise ratio in optical imaging of defects on unpatterned wafers |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014222239A (ja) | 2009-07-22 | 2014-11-27 | ケーエルエー−テンカー・コーポレーションKla−Tencor Corporation | リング状照射を備える暗視野検査システム |
WO2018128995A1 (en) | 2017-01-05 | 2018-07-12 | Kla-Tencor Corporation | Systems and methods for defect material classification |
US10942135B2 (en) | 2018-11-14 | 2021-03-09 | Kla Corporation | Radial polarizer for particle detection |
Family Cites Families (53)
Publication number | Priority date | Publication date | Assignee | Title |
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US3758201A (en) | 1971-07-15 | 1973-09-11 | American Optical Corp | Optical system for improved eye refraction |
US5286313A (en) | 1991-10-31 | 1994-02-15 | Surface Combustion, Inc. | Process control system using polarizing interferometer |
US5426506A (en) | 1993-03-22 | 1995-06-20 | The University Of Chicago | Optical method and apparatus for detection of surface and near-subsurface defects in dense ceramics |
EP0696739B1 (en) | 1994-08-12 | 2002-11-20 | Matsushita Electric Industrial Co., Ltd. | Optical sensor |
US6288780B1 (en) | 1995-06-06 | 2001-09-11 | Kla-Tencor Technologies Corp. | High throughput brightfield/darkfield wafer inspection system using advanced optical techniques |
JP3370487B2 (ja) * | 1995-07-25 | 2003-01-27 | ペンタックス株式会社 | 情報読取装置 |
DE19535392A1 (de) | 1995-09-23 | 1997-03-27 | Zeiss Carl Fa | Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit |
FR2758890B1 (fr) | 1997-01-29 | 1999-02-26 | Thomson Multimedia Sa | Dispositif optique de polarisation |
US6034776A (en) | 1997-04-16 | 2000-03-07 | The United States Of America As Represented By The Secretary Of Commerce | Microroughness-blind optical scattering instrument |
US6281993B1 (en) * | 1998-03-30 | 2001-08-28 | International Business Machines Corporation | Phase shifting element for optical information processing storing systems |
US20080198456A1 (en) | 1998-07-31 | 2008-08-21 | Colorlink, Inc. | Laminated retarder stack |
JP3610837B2 (ja) | 1998-09-18 | 2005-01-19 | 株式会社日立製作所 | 試料表面の観察方法及びその装置並びに欠陥検査方法及びその装置 |
JP3640059B2 (ja) | 1999-02-12 | 2005-04-20 | パイオニア株式会社 | 収差補正装置及びこれを用いた光学装置 |
AU2001295060A1 (en) | 2000-09-20 | 2002-04-02 | Kla-Tencor-Inc. | Methods and systems for semiconductor fabrication processes |
US6891627B1 (en) | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
DE10124474A1 (de) | 2001-05-19 | 2002-11-21 | Zeiss Carl | Mikrolithographisches Belichtungsverfahren sowie Projektionsobjektiv zur Durchführung des Verfahrens |
WO2003075207A2 (en) | 2002-03-01 | 2003-09-12 | Planar Systems, Inc. | Reflection resistant touch screens |
US6924893B2 (en) | 2002-05-13 | 2005-08-02 | Marine Biological Laboratory | Enhancing polarized light microscopy |
JP4223769B2 (ja) | 2002-08-30 | 2009-02-12 | 富士通株式会社 | 測定装置 |
JP3878107B2 (ja) * | 2002-11-06 | 2007-02-07 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法及びその装置 |
TWI628698B (zh) | 2003-10-28 | 2018-07-01 | 尼康股份有限公司 | 照明光學裝置、曝光裝置、曝光方法以及元件製造方法 |
KR101099913B1 (ko) | 2004-01-16 | 2011-12-29 | 칼 짜이스 에스엠티 게엠베하 | 편광변조 광학소자 |
US8270077B2 (en) | 2004-01-16 | 2012-09-18 | Carl Zeiss Smt Gmbh | Polarization-modulating optical element |
US7271874B2 (en) | 2004-11-02 | 2007-09-18 | Asml Holding N.V. | Method and apparatus for variable polarization control in a lithography system |
US7728965B2 (en) * | 2005-06-06 | 2010-06-01 | Kla-Tencor Technologies Corp. | Systems and methods for inspecting an edge of a specimen |
CN101233455A (zh) | 2005-06-13 | 2008-07-30 | Asml荷兰有限公司 | 投影透镜偏振传感器、光刻投影系统、测量偏振状态的方法 |
US7317512B2 (en) | 2005-07-11 | 2008-01-08 | Asml Netherlands B.V. | Different polarization in cross-section of a radiation beam in a lithographic apparatus and device manufacturing method |
DE102006031807A1 (de) | 2005-07-12 | 2007-01-18 | Carl Zeiss Smt Ag | Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage, sowie Depolarisator |
WO2007055120A1 (ja) | 2005-11-10 | 2007-05-18 | Nikon Corporation | 照明光学装置、露光装置、および露光方法 |
US7714997B2 (en) * | 2006-11-07 | 2010-05-11 | Hitachi High-Technologies Corporation | Apparatus for inspecting defects |
US20090015761A1 (en) | 2007-05-04 | 2009-01-15 | Itronix Corporation | Combination transparent touch panel liquid crystal display stack and methods of manufacturing same |
JP2009053132A (ja) | 2007-08-29 | 2009-03-12 | Hitachi High-Technologies Corp | 欠陥検査方法および欠陥検査装置 |
JP4971932B2 (ja) | 2007-10-01 | 2012-07-11 | キヤノン株式会社 | 照明光学系、露光装置、デバイス製造方法および偏光制御ユニット |
DE102009015393B3 (de) | 2009-03-20 | 2010-09-02 | Carl Zeiss Smt Ag | Messverfahren und Messsystem zur Messung der Doppelbrechung |
WO2010130673A1 (en) | 2009-05-15 | 2010-11-18 | Asml Netherlands B.V. | Inspection method for lithography |
JP5216752B2 (ja) | 2009-11-18 | 2013-06-19 | 株式会社日立ハイテクノロジーズ | 欠陥検出方法及び欠陥検出装置並びにこれを備えた欠陥観察装置 |
EP2369413B1 (en) | 2010-03-22 | 2021-04-07 | ASML Netherlands BV | Illumination system and lithographic apparatus |
DE102011013613A1 (de) * | 2010-10-01 | 2012-04-05 | Carl Zeiss Microimaging Gmbh | Mikroskop und Mikroskopierverfahren |
SG190678A1 (en) | 2010-12-16 | 2013-07-31 | Kla Tencor Corp | Wafer inspection |
US9255894B2 (en) * | 2012-11-09 | 2016-02-09 | Kla-Tencor Corporation | System and method for detecting cracks in a wafer |
US9995850B2 (en) * | 2013-06-06 | 2018-06-12 | Kla-Tencor Corporation | System, method and apparatus for polarization control |
KR101643357B1 (ko) | 2013-08-26 | 2016-07-27 | 가부시키가이샤 뉴플레어 테크놀로지 | 촬상 장치, 검사 장치 및 검사 방법 |
CN103431845B (zh) * | 2013-08-28 | 2015-08-05 | 北京信息科技大学 | 基于径向偏振光束的光学相干层析成像方法及装置 |
JP6273162B2 (ja) * | 2014-03-25 | 2018-01-31 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法及びその装置 |
JP2015206642A (ja) * | 2014-04-18 | 2015-11-19 | 株式会社日立ハイテクノロジーズ | 欠陥観察方法及びその装置 |
JP6369860B2 (ja) | 2014-07-15 | 2018-08-08 | 株式会社日立ハイテクノロジーズ | 欠陥観察方法及びその装置 |
US9891177B2 (en) | 2014-10-03 | 2018-02-13 | Kla-Tencor Corporation | TDI sensor in a darkfield system |
US10187626B2 (en) | 2015-04-10 | 2019-01-22 | The Board Of Trustees Of The Leland Stanford Junior University | Apparatuses and methods for three-dimensional imaging of an object |
US10067072B2 (en) * | 2015-07-10 | 2018-09-04 | Kla-Tencor Corporation | Methods and apparatus for speckle suppression in laser dark-field systems |
US10018560B2 (en) * | 2016-02-02 | 2018-07-10 | Kla-Tencor Corporation | System and method for hyperspectral imaging metrology |
US9874526B2 (en) | 2016-03-28 | 2018-01-23 | Kla-Tencor Corporation | Methods and apparatus for polarized wafer inspection |
JP6759053B2 (ja) | 2016-10-26 | 2020-09-23 | 株式会社ニューフレアテクノロジー | 偏光イメージ取得装置、パターン検査装置、偏光イメージ取得方法、及びパターン検査方法 |
CN108680544B (zh) * | 2018-04-23 | 2021-04-06 | 浙江大学 | 一种结构化照明的光切片荧光显微成像方法和装置 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014222239A (ja) | 2009-07-22 | 2014-11-27 | ケーエルエー−テンカー・コーポレーションKla−Tencor Corporation | リング状照射を備える暗視野検査システム |
WO2018128995A1 (en) | 2017-01-05 | 2018-07-12 | Kla-Tencor Corporation | Systems and methods for defect material classification |
US10942135B2 (en) | 2018-11-14 | 2021-03-09 | Kla Corporation | Radial polarizer for particle detection |
CN112969910B (zh) | 2018-11-14 | 2022-06-17 | 科磊股份有限公司 | 用于粒子检测的系统和方法 |
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