JP5713542B2 - 源ガスから発生したプラズマで製品を処理する装置 - Google Patents

源ガスから発生したプラズマで製品を処理する装置 Download PDF

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Publication number
JP5713542B2
JP5713542B2 JP2009121573A JP2009121573A JP5713542B2 JP 5713542 B2 JP5713542 B2 JP 5713542B2 JP 2009121573 A JP2009121573 A JP 2009121573A JP 2009121573 A JP2009121573 A JP 2009121573A JP 5713542 B2 JP5713542 B2 JP 5713542B2
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Prior art keywords
electrodes
outer periphery
gas distribution
electrode
source gas
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Expired - Fee Related
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JP2009121573A
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Japanese (ja)
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JP2009295580A5 (zh
JP2009295580A (ja
Inventor
ヴィ． ボールデン ザ セカンド トーマス
ヴィ． ボールデン ザ セカンド トーマス
フィエロ ルイス
フィエロ ルイス
ディー． ゲテイ ジェームズ
ディー． ゲテイ ジェームズ
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Nordson Corp
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Nordson Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J15/00—Gas-filled discharge tubes with gaseous cathodes, e.g. plasma cathode
    • H01J15/02—Details, e.g. electrode, gas filling, shape of vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Cleaning In General (AREA)
  • Drying Of Semiconductors (AREA)
JP2009121573A 2008-05-20 2009-05-20 源ガスから発生したプラズマで製品を処理する装置 Expired - Fee Related JP5713542B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/123,954 US8372238B2 (en) 2008-05-20 2008-05-20 Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
US12/123,954 2008-05-20

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015045390A Division JP6078571B2 (ja) 2008-05-20 2015-03-09 製品を処理する装置

Publications (3)

Publication Number Publication Date
JP2009295580A JP2009295580A (ja) 2009-12-17
JP2009295580A5 JP2009295580A5 (zh) 2012-07-05
JP5713542B2 true JP5713542B2 (ja) 2015-05-07

Family

ID=41341204

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2009121573A Expired - Fee Related JP5713542B2 (ja) 2008-05-20 2009-05-20 源ガスから発生したプラズマで製品を処理する装置
JP2015045390A Expired - Fee Related JP6078571B2 (ja) 2008-05-20 2015-03-09 製品を処理する装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2015045390A Expired - Fee Related JP6078571B2 (ja) 2008-05-20 2015-03-09 製品を処理する装置

Country Status (6)

Country Link
US (2) US8372238B2 (zh)
JP (2) JP5713542B2 (zh)
KR (2) KR101645191B1 (zh)
CN (2) CN103474327B (zh)
SG (2) SG176502A1 (zh)
TW (1) TWI519212B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015146317A (ja) * 2008-05-20 2015-08-13 ノードソン コーポレーションＮｏｒｄｓｏｎ Ｃｏｒｐｏｒａｔｉｏｎ 密封型処理チャンバと電極への内部バスによる電気接続とを備えた多電極プラズマ処理システム

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US8333166B2 (en) 2011-05-04 2012-12-18 Nordson Corporation Plasma treatment systems and methods for uniformly distributing radiofrequency power between multiple electrodes
WO2013040486A1 (en) * 2011-09-15 2013-03-21 Cold Plasma Medical Technologies, Inc. Cold plasma treatment devices and associated methods
US8597982B2 (en) 2011-10-31 2013-12-03 Nordson Corporation Methods of fabricating electronics assemblies
US9840778B2 (en) 2012-06-01 2017-12-12 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma chamber having an upper electrode having controllable valves and a method of using the same
CN102881551B (zh) * 2012-09-12 2015-05-27 珠海宝丰堂电子科技有限公司 具有气流限制机构的等离子体处理系统及其方法
CN103904016A (zh) * 2014-04-04 2014-07-02 株洲南车时代电气股份有限公司 硅片承载装置
AU2016282065A1 (en) * 2015-06-23 2018-02-08 Aurora Labs Limited Plasma driven particle propagation apparatus and pumping method
JP1562489S (zh) * 2015-08-14 2016-11-07
US11374184B2 (en) 2016-09-08 2022-06-28 Boe Technology Group Co., Ltd. Flexible substrate and fabrication method thereof, and flexible display apparatus
TWI800505B (zh) * 2017-04-24 2023-05-01 美商應用材料股份有限公司 對電漿反應器的電極施加功率
CN108787634A (zh) * 2018-07-19 2018-11-13 深圳市神州天柱科技有限公司 一种等离子清洗机
US11602039B2 (en) 2018-12-20 2023-03-07 Mécanique Analytique Inc Electrode assemblies for plasma discharge devices
CN110223904A (zh) * 2019-07-19 2019-09-10 江苏鲁汶仪器有限公司 一种具有法拉第屏蔽装置的等离子体处理系统

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015146317A (ja) * 2008-05-20 2015-08-13 ノードソン コーポレーションＮｏｒｄｓｏｎ Ｃｏｒｐｏｒａｔｉｏｎ 密封型処理チャンバと電極への内部バスによる電気接続とを備えた多電極プラズマ処理システム

Also Published As

Publication number Publication date
SG157301A1 (en) 2009-12-29
CN101587827B (zh) 2013-09-04
JP2015146317A (ja) 2015-08-13
US20130139967A1 (en) 2013-06-06
TW201004493A (en) 2010-01-16
CN103474327A (zh) 2013-12-25
KR20160095654A (ko) 2016-08-11
US8372238B2 (en) 2013-02-12
US20090288773A1 (en) 2009-11-26
KR101645191B1 (ko) 2016-08-12
KR101695632B1 (ko) 2017-01-13
CN103474327B (zh) 2016-03-16
TWI519212B (zh) 2016-01-21
US10109448B2 (en) 2018-10-23
SG176502A1 (en) 2011-12-29
JP6078571B2 (ja) 2017-02-08
CN101587827A (zh) 2009-11-25
JP2009295580A (ja) 2009-12-17
KR20090121225A (ko) 2009-11-25

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