JP5712074B2 - 走査透過電子顕微鏡 - Google Patents

走査透過電子顕微鏡 Download PDF

Info

Publication number
JP5712074B2
JP5712074B2 JP2011158548A JP2011158548A JP5712074B2 JP 5712074 B2 JP5712074 B2 JP 5712074B2 JP 2011158548 A JP2011158548 A JP 2011158548A JP 2011158548 A JP2011158548 A JP 2011158548A JP 5712074 B2 JP5712074 B2 JP 5712074B2
Authority
JP
Japan
Prior art keywords
sample
image
electron microscope
transmission electron
depth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011158548A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013025967A (ja
JP2013025967A5 (enExample
Inventor
博実 稲田
博実 稲田
邦康 中村
邦康 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2011158548A priority Critical patent/JP5712074B2/ja
Priority to PCT/JP2012/068369 priority patent/WO2013012041A1/ja
Priority to CN201280035812.9A priority patent/CN103703537B/zh
Priority to US14/232,526 priority patent/US8878130B2/en
Priority to DE112012002668.3T priority patent/DE112012002668B4/de
Publication of JP2013025967A publication Critical patent/JP2013025967A/ja
Publication of JP2013025967A5 publication Critical patent/JP2013025967A5/ja
Application granted granted Critical
Publication of JP5712074B2 publication Critical patent/JP5712074B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H01J37/263—Contrast, resolution or power of penetration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/2206—Combination of two or more measurements, at least one measurement being that of secondary emission, e.g. combination of secondary electron [SE] measurement and back-scattered electron [BSE] measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/21—Means for adjusting the focus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0455—Diaphragms with variable aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1532—Astigmatism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/21—Focus adjustment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/221—Image processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/221—Image processing
    • H01J2237/225—Displaying image using synthesised colours
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/226—Image reconstruction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24475—Scattered electron detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/2611—Stereoscopic measurements and/or imaging
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2802—Transmission microscopes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2011158548A 2011-07-20 2011-07-20 走査透過電子顕微鏡 Active JP5712074B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011158548A JP5712074B2 (ja) 2011-07-20 2011-07-20 走査透過電子顕微鏡
PCT/JP2012/068369 WO2013012041A1 (ja) 2011-07-20 2012-07-19 走査電子顕微鏡及び走査透過電子顕微鏡
CN201280035812.9A CN103703537B (zh) 2011-07-20 2012-07-19 扫描电子显微镜及扫描透过电子显微镜
US14/232,526 US8878130B2 (en) 2011-07-20 2012-07-19 Scanning electron microscope and scanning transmission electron microscope
DE112012002668.3T DE112012002668B4 (de) 2011-07-20 2012-07-19 Rasterelektronenmikroskop und Rastertransmissionselektronenmikroskop

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011158548A JP5712074B2 (ja) 2011-07-20 2011-07-20 走査透過電子顕微鏡

Publications (3)

Publication Number Publication Date
JP2013025967A JP2013025967A (ja) 2013-02-04
JP2013025967A5 JP2013025967A5 (enExample) 2013-10-31
JP5712074B2 true JP5712074B2 (ja) 2015-05-07

Family

ID=47558216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011158548A Active JP5712074B2 (ja) 2011-07-20 2011-07-20 走査透過電子顕微鏡

Country Status (5)

Country Link
US (1) US8878130B2 (enExample)
JP (1) JP5712074B2 (enExample)
CN (1) CN103703537B (enExample)
DE (1) DE112012002668B4 (enExample)
WO (1) WO2013012041A1 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5712074B2 (ja) * 2011-07-20 2015-05-07 株式会社日立ハイテクノロジーズ 走査透過電子顕微鏡
US8704176B2 (en) * 2011-08-10 2014-04-22 Fei Company Charged particle microscope providing depth-resolved imagery
EP2584584A1 (en) * 2011-10-19 2013-04-24 FEI Company Method for adjusting a STEM equipped with an aberration corrector
EP2872966A1 (en) * 2012-07-12 2015-05-20 Dual Aperture International Co. Ltd. Gesture-based user interface
GB201302624D0 (en) 2013-02-14 2013-04-03 Univ Antwerpen High-resolution amplitude contrast imaging
WO2014192361A1 (ja) * 2013-05-30 2014-12-04 株式会社 日立ハイテクノロジーズ 荷電粒子線装置、試料観察方法
WO2015181981A1 (ja) * 2014-05-30 2015-12-03 富士通株式会社 電子顕微鏡による分析方法及び電子顕微鏡
JP6190768B2 (ja) * 2014-07-02 2017-08-30 株式会社日立ハイテクノロジーズ 電子顕微鏡装置およびそれを用いた撮像方法
CN104091745B (zh) * 2014-07-18 2016-06-01 镇江乐华电子科技有限公司 一种集成tem荧光屏和stem探测器的一体化结构
DE112014006916B4 (de) 2014-10-09 2021-01-28 Hitachi High-Tech Corporation Mit einem Strahl geladener Teilchen arbeitende Vorrichtung sowie Elektronenmikroskop
US20160123905A1 (en) * 2014-11-04 2016-05-05 Macronix International Co., Ltd. Inspection of inconsistencies in and on semiconductor devices and structures
JP6177817B2 (ja) 2015-01-30 2017-08-09 松定プレシジョン株式会社 荷電粒子線装置及び走査電子顕微鏡
WO2016149676A1 (en) * 2015-03-18 2016-09-22 Battelle Memorial Institute Electron beam masks for compressive sensors
US10170274B2 (en) 2015-03-18 2019-01-01 Battelle Memorial Institute TEM phase contrast imaging with image plane phase grating
US9625398B1 (en) 2016-01-11 2017-04-18 International Business Machines Corporation Cross sectional depth composition generation utilizing scanning electron microscopy
JP6677519B2 (ja) * 2016-02-03 2020-04-08 日本電子株式会社 電子顕微鏡および収差測定方法
WO2017189212A1 (en) 2016-04-29 2017-11-02 Battelle Memorial Institute Compressive scanning spectroscopy
US10133854B2 (en) 2016-05-12 2018-11-20 International Business Machines Corporation Compositional three-dimensional surface plots
JP6680359B2 (ja) 2016-06-29 2020-04-15 株式会社オートネットワーク技術研究所 端子モジュール及びコネクタ
CN106645250B (zh) * 2016-11-21 2024-04-26 宁波聚瑞精密仪器有限公司 一种具备光学成像功能的扫描透射电子显微镜
US10090131B2 (en) * 2016-12-07 2018-10-02 Kla-Tencor Corporation Method and system for aberration correction in an electron beam system
CN106876235B (zh) * 2017-02-21 2019-01-01 顾士平 质子显微镜、波谱仪、能谱仪、微纳加工平台
JP6805945B2 (ja) * 2017-04-12 2020-12-23 富士通株式会社 分析方法及び分析装置
US10295677B2 (en) 2017-05-08 2019-05-21 Battelle Memorial Institute Systems and methods for data storage and retrieval
US10904425B2 (en) * 2017-11-06 2021-01-26 Canon Kabushiki Kaisha Image processing apparatus, control method therefor, and storage medium for evaluating a focusing state of image data
EP3480586B1 (en) * 2017-11-06 2021-02-24 Bruker Nano GmbH X-ray fluorescence spectrometer
EP3550585B1 (en) * 2018-04-05 2021-06-23 FEI Company Studying dynamic specimens in a transmission charged particle microscope
JP2019185972A (ja) * 2018-04-06 2019-10-24 株式会社日立ハイテクノロジーズ 走査電子顕微鏡システム及びパターンの深さ計測方法
US10714309B1 (en) * 2019-04-04 2020-07-14 Fei Company Using images from secondary microscope detectors to automatically generate labeled images from primary microscope detectors
CN112485277A (zh) * 2019-08-23 2021-03-12 天津理工大学 一种对原子核成像的显微方法
JP6962979B2 (ja) * 2019-09-12 2021-11-05 日本電子株式会社 暗視野像の取得方法
US11404241B2 (en) * 2020-03-30 2022-08-02 Fei Company Simultaneous TEM and STEM microscope
US11460419B2 (en) 2020-03-30 2022-10-04 Fei Company Electron diffraction holography
US11264202B2 (en) * 2020-05-18 2022-03-01 Applied Materials Israel Ltd. Generating three dimensional information regarding structural elements of a specimen
EP3929962A1 (en) * 2020-06-25 2021-12-29 FEI Company Method of imaging a specimen using a transmission charged particle microscope
EP4369376A1 (en) * 2022-06-24 2024-05-15 FEI Company Improved transmission electron microscopy
KR20240069301A (ko) * 2022-11-11 2024-05-20 삼성전자주식회사 깊이 정보 추정 방법 및 장치
CN119985586B (zh) * 2025-04-11 2025-07-25 宁波伯锐锶电子束科技有限公司 一种生物样品的扫描图像获取方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521033A (ja) * 1991-07-16 1993-01-29 Fujitsu Ltd 荷電ビーム装置
JPH05299048A (ja) 1992-04-24 1993-11-12 Hitachi Ltd 電子線装置および走査電子顕微鏡
US6538249B1 (en) * 1999-07-09 2003-03-25 Hitachi, Ltd. Image-formation apparatus using charged particle beams under various focus conditions
US20020170887A1 (en) * 2001-03-01 2002-11-21 Konica Corporation Optical element producing method, base material drawing method and base material drawing apparatus
JP2004214060A (ja) * 2003-01-06 2004-07-29 Hitachi High-Technologies Corp 走査電子顕微鏡及びそれを用いた試料観察方法
JP2004335320A (ja) * 2003-05-09 2004-11-25 Hitachi High-Technologies Corp 荷電粒子線装置
JP4286625B2 (ja) * 2003-09-29 2009-07-01 株式会社日立ハイテクノロジーズ 電子顕微鏡による試料観察方法
US7067808B2 (en) 2003-10-14 2006-06-27 Topcon Corporation Electron beam system and electron beam measuring and observing method
JP4532177B2 (ja) * 2004-06-17 2010-08-25 株式会社トプコン 電子線システム
JP4262649B2 (ja) 2004-08-06 2009-05-13 株式会社日立ハイテクノロジーズ 走査型電子顕微鏡装置およびこれを用いた三次元画像表示方法
JP2006216396A (ja) * 2005-02-04 2006-08-17 Hitachi High-Technologies Corp 荷電粒子線装置
JP4445893B2 (ja) * 2005-04-06 2010-04-07 株式会社日立ハイテクノロジーズ 走査形電子顕微鏡
CN101025402B (zh) * 2006-02-17 2012-07-04 株式会社日立高新技术 扫描型电子显微镜装置以及使用它的摄影方法
JP2008084643A (ja) * 2006-09-27 2008-04-10 Fujitsu Ltd 電子顕微鏡及び立体観察方法
JP4791333B2 (ja) * 2006-11-30 2011-10-12 株式会社日立ハイテクノロジーズ パターン寸法計測方法及び走査型透過荷電粒子顕微鏡
JP2008270056A (ja) * 2007-04-24 2008-11-06 National Institute For Materials Science 走査型透過電子顕微鏡
US7888640B2 (en) * 2007-06-18 2011-02-15 Hitachi High-Technologies Corporation Scanning electron microscope and method of imaging an object by using the scanning electron microscope
US7759642B2 (en) * 2008-04-30 2010-07-20 Applied Materials Israel, Ltd. Pattern invariant focusing of a charged particle beam
JP5438937B2 (ja) * 2008-09-05 2014-03-12 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置
JP5397060B2 (ja) * 2009-07-17 2014-01-22 富士通株式会社 荷電粒子顕微鏡及び解析方法
DE102009028013B9 (de) * 2009-07-24 2014-04-17 Carl Zeiss Microscopy Gmbh Teilchenstrahlgerät mit einer Blendeneinheit und Verfahren zur Einstellung eines Strahlstroms in einem Teilchenstrahlgerät
JP5712074B2 (ja) * 2011-07-20 2015-05-07 株式会社日立ハイテクノロジーズ 走査透過電子顕微鏡

Also Published As

Publication number Publication date
WO2013012041A1 (ja) 2013-01-24
CN103703537A (zh) 2014-04-02
DE112012002668B4 (de) 2015-07-23
US8878130B2 (en) 2014-11-04
JP2013025967A (ja) 2013-02-04
CN103703537B (zh) 2015-06-17
US20140138542A1 (en) 2014-05-22
DE112012002668T5 (de) 2014-04-24

Similar Documents

Publication Publication Date Title
JP5712074B2 (ja) 走査透過電子顕微鏡
JP5404008B2 (ja) 粒子光機器においてサンプルの走査型透過画像を取得する方法
JP3867524B2 (ja) 電子線を用いた観察装置及び観察方法
Liu Advances and applications of atomic-resolution scanning transmission electron microscopy
US10784076B2 (en) 3D defect characterization of crystalline samples in a scanning type electron microscope
JP4553889B2 (ja) 粒子光学レンズの収差関数における収差係数の決定方法
JP2007179753A (ja) 走査透過電子顕微鏡、及び収差測定方法
Ren et al. Transmission electron imaging in the Delft multibeam scanning electron microscope 1
WO2015015985A1 (ja) 荷電粒子線装置及び荷電粒子線装置における収差測定法
US8227752B1 (en) Method of operating a scanning electron microscope
EP2378537A1 (en) A charged particle beam device and a method of operating a charged particle beam device
TWI839863B (zh) 決定聚焦帶電粒子束的束匯聚度的方法及帶電粒子束系統
JP5423612B2 (ja) 共焦点走査透過型電子顕微鏡装置及び３次元断層像観察方法
JP2003249186A (ja) 走査透過型電子顕微鏡に依る観察方法及び観察装置
JP2006173027A (ja) 走査透過電子顕微鏡、及び収差測定方法、ならびに収差補正方法
JP2008159286A (ja) プローブ評価方法
JP4337832B2 (ja) 電子線を用いた観察装置及び観察方法
WO2022186326A1 (ja) 学習器の学習方法、及び画像生成システム
JP2005032732A (ja) 走査電子顕微鏡
JP4920370B2 (ja) 透過型電子顕微鏡の情報伝達限界測定法およびこの測定法が適用された透過型電子顕微鏡
CZ307991B6 (cs) Clonová jednotka pro přístroj používající korpuskulární záření
JP5397060B2 (ja) 荷電粒子顕微鏡及び解析方法
Khursheed et al. Add-on transmission attachments for the scanning electron microscope
JP6213674B2 (ja) 電子顕微鏡による分析方法及び電子顕微鏡
JP4726048B2 (ja) 位相回復方式の電子顕微鏡による観察方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130821

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130821

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130821

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140819

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140905

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150210

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150309

R150 Certificate of patent or registration of utility model

Ref document number: 5712074

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350