JP5710982B2 - 透光性多結晶材料及びその製造方法 - Google Patents
透光性多結晶材料及びその製造方法 Download PDFInfo
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- JP5710982B2 JP5710982B2 JP2010543918A JP2010543918A JP5710982B2 JP 5710982 B2 JP5710982 B2 JP 5710982B2 JP 2010543918 A JP2010543918 A JP 2010543918A JP 2010543918 A JP2010543918 A JP 2010543918A JP 5710982 B2 JP5710982 B2 JP 5710982B2
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- single crystal
- crystal particles
- polycrystalline material
- rare earth
- magnetic field
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- 239000000463 material Substances 0.000 title claims description 84
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 239000013078 crystal Substances 0.000 claims description 186
- 239000002245 particle Substances 0.000 claims description 105
- 229910052587 fluorapatite Inorganic materials 0.000 claims description 70
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 65
- -1 rare earth ions Chemical class 0.000 claims description 52
- 238000005245 sintering Methods 0.000 claims description 47
- 239000000126 substance Substances 0.000 claims description 34
- 229910052586 apatite Inorganic materials 0.000 claims description 33
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 28
- 238000000465 moulding Methods 0.000 claims description 26
- 229910052779 Neodymium Inorganic materials 0.000 claims description 25
- 238000010304 firing Methods 0.000 claims description 24
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 claims description 22
- VSIIXMUUUJUKCM-UHFFFAOYSA-D pentacalcium;fluoride;triphosphate Chemical compound [F-].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O VSIIXMUUUJUKCM-UHFFFAOYSA-D 0.000 claims description 18
- 229910052684 Cerium Inorganic materials 0.000 claims description 17
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 17
- 229910052691 Erbium Inorganic materials 0.000 claims description 17
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 17
- 229910052772 Samarium Inorganic materials 0.000 claims description 17
- 229910052771 Terbium Inorganic materials 0.000 claims description 17
- 229910052775 Thulium Inorganic materials 0.000 claims description 16
- 230000005415 magnetization Effects 0.000 claims description 16
- 239000000725 suspension Substances 0.000 claims description 15
- 229910052689 Holmium Inorganic materials 0.000 claims description 13
- 229910052773 Promethium Inorganic materials 0.000 claims description 12
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical group [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 12
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 12
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 12
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims description 12
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 12
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims description 12
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 claims description 12
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 12
- 230000003068 static effect Effects 0.000 claims description 12
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims description 12
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 claims description 12
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 10
- 229910052720 vanadium Inorganic materials 0.000 claims description 10
- 229910052765 Lutetium Inorganic materials 0.000 claims description 9
- 238000002834 transmittance Methods 0.000 claims description 9
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 8
- CNEVBWVCXNYGIA-UHFFFAOYSA-N gadolinium(3+);trioxido(oxo)vanadium Chemical compound [Gd+3].[O-][V]([O-])([O-])=O CNEVBWVCXNYGIA-UHFFFAOYSA-N 0.000 claims description 7
- 229910052727 yttrium Inorganic materials 0.000 claims description 7
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 229940077441 fluorapatite Drugs 0.000 claims description 5
- 229910052588 hydroxylapatite Inorganic materials 0.000 claims description 5
- XYJRXVWERLGGKC-UHFFFAOYSA-D pentacalcium;hydroxide;triphosphate Chemical compound [OH-].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O XYJRXVWERLGGKC-UHFFFAOYSA-D 0.000 claims description 5
- 238000007569 slipcasting Methods 0.000 claims description 5
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 5
- 230000002708 enhancing effect Effects 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 description 36
- 238000000034 method Methods 0.000 description 22
- 230000000052 comparative effect Effects 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 13
- 239000002002 slurry Substances 0.000 description 10
- 229910052731 fluorine Inorganic materials 0.000 description 9
- 238000001513 hot isostatic pressing Methods 0.000 description 7
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 6
- 229910052602 gypsum Inorganic materials 0.000 description 6
- 239000010440 gypsum Substances 0.000 description 6
- 239000002270 dispersing agent Substances 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- HIQSCMNRKRMPJT-UHFFFAOYSA-J lithium;yttrium(3+);tetrafluoride Chemical class [Li+].[F-].[F-].[F-].[F-].[Y+3] HIQSCMNRKRMPJT-UHFFFAOYSA-J 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/0253—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing permanent magnets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28B—SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
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- C—CHEMISTRY; METALLURGY
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/447—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on phosphates, e.g. hydroxyapatite
-
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
-
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
- C04B35/6455—Hot isostatic pressing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
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- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1685—Ceramics
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/602—Making the green bodies or pre-forms by moulding
- C04B2235/6027—Slip casting
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- C—CHEMISTRY; METALLURGY
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/605—Making or treating the green body or pre-form in a magnetic field
-
- C—CHEMISTRY; METALLURGY
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9646—Optical properties
- C04B2235/9653—Translucent or transparent ceramics other than alumina
-
- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
-
- H—ELECTRICITY
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
-
- H—ELECTRICITY
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium
-
- H—ELECTRICITY
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
- H01S3/1673—YVO4 [YVO]
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- Crystals, And After-Treatments Of Crystals (AREA)
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Description
前記単結晶粒子は、アパタイト系化合物、バナデート系化合物、アルミナ系化合物、又はイットリウムリチウムフロライド系化合物よりなり、
前記透光性多結晶材料の直線透過率は50%以上であり、
前記希土類元素が、セリウム(Ce)、プラセオジウム(Pr)、ネオジム(Nd)、プロメチウム(Pm)、サマリウム(Sm)、テルビウム(Tb)、ジスプロシウム(Dy)、ホロミウム(Ho)、エルビウム(Er)、ツリウム(Tm)及びイッテルビウム(Yb)よりなる群から選ばれる少なくとも一種であることを特徴とする。
磁場空間でスリップキャスティングを行うことにより、前記懸濁液から成形体を得る成形工程と、
前記成形体を焼成して、結晶方位が制御された多結晶構造を有する透光性の多結晶体よりなる透光性多結晶材料を得る焼成工程と、を備え、
前記希土類イオンは、前記単結晶粒子の磁気異方性を増強させる磁気異方性増強物質であり、
前記成形工程で、前記単結晶粒子が前記磁気異方性を発揮するように温度制御しつつ、該単結晶粒子における磁化容易軸の方向に応じて静磁場及び回転磁場のうちの一方を選択して印加し、
前記焼成工程で、前記成形体を1600〜1900Kの温度で一次焼結して一次焼結体を得る一次焼結工程と、該一次焼結体を1600〜1900Kの温度で熱間等方加圧焼結する二次焼結工程とを順に実施して、直線透過率が50%以上の透光性多結晶材料を製造する方法であって、
前記単結晶粒子は、アパタイト系化合物、バナデート系化合物、アルミナ系化合物、又はイットリウムリチウムフロライド系化合物よりなり、
前記希土類元素が、セリウム(Ce)、プラセオジウム(Pr)、ネオジム(Nd)、プロメチウム(Pm)、サマリウム(Sm)、テルビウム(Tb)、ジスプロシウム(Dy)、ホロミウム(Ho)、エルビウム(Er)、ツリウム(Tm)及びイッテルビウム(Yb)よりなる群から選ばれる少なくとも一種であることを特徴とする。
3…電磁石
Claims (12)
- 光学的に異方性の単結晶粒子であって、希土類元素からなり4f電子を有する希土類イオンを前記単結晶粒子の結晶中に含めることにより磁気異方性が増強された複数の前記単結晶粒子から、配向が制御された前記単結晶粒子より成る成形体を磁場空間で成形し、前記成形体を焼成して得られた透光性の多結晶体よりなり、
各該単結晶粒子の結晶方向が一方向に揃った多結晶構造を有する透光性多結晶材料であって、
前記単結晶粒子は、アパタイト系化合物、バナデート系化合物、アルミナ系化合物、又はイットリウムリチウムフロライド系化合物よりなり、
前記透光性多結晶材料の直線透過率は50%以上であり、
前記希土類元素が、セリウム(Ce)、プラセオジウム(Pr)、ネオジム(Nd)、プロメチウム(Pm)、サマリウム(Sm)、テルビウム(Tb)、ジスプロシウム(Dy)、ホロミウム(Ho)、エルビウム(Er)、ツリウム(Tm)及びイッテルビウム(Yb)よりなる群から選ばれる少なくとも一種であることを特徴とする透光性多結晶材料。 - 前記アパタイト系化合物がα5(βO4)3γ(α:Ca又はSr、β:P又はV、γ:OH又はF)の化学式で示されるフッ素アパタイト、水酸アパタイト又はバナジウムアパタイトである請求項1に記載の透光性多結晶材料。
- 前記バナデート系化合物がYVO4の化学式で示されるイットリウムオルソバナデート、GdVO4の化学式で示されるガドリニウムオルソバナデート及びLuVO4の化学式で示されるルテチウムオルソバナデートよりなる群から選ばれる一種である請求項1に記載の透光性多結晶材料。
- 光学材料に用いられる請求項1に記載の透光性多結晶材料。
- 希土類元素からなり4f電子を有する希土類イオンが添加された光学的に異方性の単結晶粒子を含む原料粉末を溶液中に分散させて、懸濁液を準備する準備工程と、
磁場空間でスリップキャスティングを行うことにより、前記懸濁液から成形体を得る成形工程と、
前記成形体を焼成して、結晶方位が制御された多結晶構造を有する透光性の多結晶体よりなる透光性多結晶材料を得る焼成工程と、を備え、
前記希土類イオンは、前記単結晶粒子の磁気異方性を増強させる磁気異方性増強物質であり、
前記成形工程で、前記単結晶粒子が前記磁気異方性を発揮するように温度制御しつつ、該単結晶粒子における磁化容易軸の方向に応じて静磁場及び回転磁場のうちの一方を選択して印加し、
前記焼成工程で、前記成形体を1600〜1900Kの温度で一次焼結して一次焼結体を得る一次焼結工程と、該一次焼結体を1600〜1900Kの温度で熱間等方加圧焼結する二次焼結工程とを順に実施して、直線透過率が50%以上の透光性多結晶材料を製造する方法であって、
前記単結晶粒子は、アパタイト系化合物、バナデート系化合物、アルミナ系化合物、又はイットリウムリチウムフロライド系化合物よりなり、
前記希土類元素が、セリウム(Ce)、プラセオジウム(Pr)、ネオジム(Nd)、プロメチウム(Pm)、サマリウム(Sm)、テルビウム(Tb)、ジスプロシウム(Dy)、ホロミウム(Ho)、エルビウム(Er)、ツリウム(Tm)及びイッテルビウム(Yb)よりなる群から選ばれる少なくとも一種であることを特徴とする透光性多結晶材料の製造方法。 - 前記成形工程で、前記単結晶粒子における磁化容易軸がc軸である場合は静磁場を印加する請求項5に記載の透光性多結晶材料の製造方法。
- 前記成形工程で、前記単結晶粒子における磁化容易軸がa軸である場合は鉛直方向を回転軸とする回転磁場を印加する請求項5に記載の透光性多結晶材料の製造方法。
- 前記単結晶粒子がアパタイト系化合物よりなり、かつ前記希土類元素がセリウム(Ce)、プラセオジウム(Pr)、ネオジム(Nd)、テルビウム(Tb)、ジスプロシウム(Dy)及びホロミウム(Ho)よりなる群から選ばれる少なくとも一種である場合、又は
前記単結晶粒子がバナデート系化合物よりなり、かつ前記希土類元素がプロメチウム(Pm)、サマリウム(Sm)、エルビウム(Er)、ツリウム(Tm)及びイッテルビウム(Yb)よりなる群から選ばれる少なくとも一種である場合であって、
前記成形工程で静磁場を印加する請求項6に記載の透光性多結晶材料の製造方法。 - 前記単結晶粒子がアパタイト系化合物よりなり、かつ前記希土類元素がプロメチウム(Pm)、サマリウム(Sm)、エルビウム(Er)、ツリウム(Tm)及びイッテルビウム(Yb)よりなる群から選ばれる少なくとも一種である場合、又は
前記単結晶粒子がバナデート系化合物よりなり、かつ前記希土類元素がセリウム(Ce)、プラセオジウム(Pr)、ネオジム(Nd)、テルビウム(Tb)、ジスプロシウム(Dy)及びホロミウム(Ho)よりなる群から選ばれる少なくとも一種である場合であって、
前記成形工程で回転磁場を印加する請求項7に記載の透光性多結晶材料の製造方法。 - 前記アパタイト系化合物がα5(βO4)3γ(α:Ca又はSr、β:P又はV、γ:OH又はF)の化学式で示されるフッ素アパタイト、水酸アパタイト又はバナジウムアパタイトである請求項5に記載の透光性多結晶材料の製造方法。
- 前記バナデート系化合物がYVO4の化学式で示されるイットリウムオルソバナデート、GdVO4の化学式で示されるガドリニウムオルソバナデート及びLuVO4の化学式で示されるルテチウムオルソバナデートよりなる群から選ばれる一種である請求項5に記載の透光性多結晶材料の製造方法。
- 前記成形工程で印加する磁場の強度が1T(テスラ)以上であり、該成形工程で前記単結晶粒子の結晶温度が300K以下となるように温度制御する請求項5に記載の透光性多結晶材料の製造方法。
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