JP5709564B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5709564B2
JP5709564B2 JP2011026355A JP2011026355A JP5709564B2 JP 5709564 B2 JP5709564 B2 JP 5709564B2 JP 2011026355 A JP2011026355 A JP 2011026355A JP 2011026355 A JP2011026355 A JP 2011026355A JP 5709564 B2 JP5709564 B2 JP 5709564B2
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insulator
disposed
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waveguide member
interlayer insulating
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Japanese (ja)
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JP2012164945A (ja
JP2012164945A5 (enExample
Inventor
鈴木　健太郎
健太郎 鈴木
剛士 岡部
剛士 岡部
博晃 佐野
博晃 佐野
旬史 岩田
旬史 岩田
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Canon Inc
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Canon Inc
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Priority to JP2011026355A priority Critical patent/JP5709564B2/ja
Priority to US13/366,577 priority patent/US8846436B2/en
Priority to CN201210027892.5A priority patent/CN102637705B/zh
Publication of JP2012164945A publication Critical patent/JP2012164945A/ja
Publication of JP2012164945A5 publication Critical patent/JP2012164945A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2011026355A 2011-02-09 2011-02-09 半導体装置の製造方法 Active JP5709564B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011026355A JP5709564B2 (ja) 2011-02-09 2011-02-09 半導体装置の製造方法
US13/366,577 US8846436B2 (en) 2011-02-09 2012-02-06 Semiconductor device manufacturing method for forming an opening to provide a plug
CN201210027892.5A CN102637705B (zh) 2011-02-09 2012-02-09 半导体器件制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011026355A JP5709564B2 (ja) 2011-02-09 2011-02-09 半導体装置の製造方法

Related Child Applications (1)

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JP2015042753A Division JP5968481B2 (ja) 2015-03-04 2015-03-04 半導体装置の製造方法

Publications (3)

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JP2012164945A JP2012164945A (ja) 2012-08-30
JP2012164945A5 JP2012164945A5 (enExample) 2014-09-18
JP5709564B2 true JP5709564B2 (ja) 2015-04-30

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JP2011026355A Active JP5709564B2 (ja) 2011-02-09 2011-02-09 半導体装置の製造方法

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US (1) US8846436B2 (enExample)
JP (1) JP5709564B2 (enExample)
CN (1) CN102637705B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4866972B1 (ja) * 2011-04-20 2012-02-01 パナソニック株式会社 固体撮像装置及びその製造方法
US20120267741A1 (en) * 2011-04-21 2012-10-25 Panasonic Corporation Solid-state imaging device and method for manufacturing the same
JP6039294B2 (ja) 2012-08-07 2016-12-07 キヤノン株式会社 半導体装置の製造方法
JP2015114433A (ja) * 2013-12-10 2015-06-22 富士通セミコンダクター株式会社 半導体装置及び半導体装置の製造方法
JP2015153870A (ja) * 2014-02-13 2015-08-24 キヤノン株式会社 半導体装置の製造方法、光電変換装置
JP2017162925A (ja) * 2016-03-08 2017-09-14 キヤノン株式会社 撮像装置の製造方法
JP2017220620A (ja) 2016-06-09 2017-12-14 キヤノン株式会社 固体撮像装置の製造方法
US10319765B2 (en) * 2016-07-01 2019-06-11 Canon Kabushiki Kaisha Imaging device having an effective pixel region, an optical black region and a dummy region each with pixels including a photoelectric converter
JP6574808B2 (ja) * 2016-07-01 2019-09-11 キヤノン株式会社 撮像装置
JP7086558B2 (ja) * 2016-10-28 2022-06-20 キヤノン株式会社 光電変換装置および撮像システム
GB2558714B (en) 2016-10-28 2020-04-08 Canon Kk Photoelectric conversion apparatus and image pickup system
EP3955300A1 (en) * 2020-08-11 2022-02-16 Infineon Technologies Dresden GmbH & Co . KG Device for an image sensor, image sensor for an optical camera and optical camera

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61173251A (ja) * 1985-01-28 1986-08-04 Mitsubishi Electric Corp フオトマスクの製造方法
JP2002057318A (ja) 2000-08-07 2002-02-22 Sony Corp 固体撮像素子及びその製造方法
JP4427949B2 (ja) 2002-12-13 2010-03-10 ソニー株式会社 固体撮像素子及びその製造方法
US7442973B2 (en) * 2002-12-13 2008-10-28 Sony Corporation Solid-state imaging device and production method therefor
JP2008103757A (ja) * 2002-12-25 2008-05-01 Sony Corp 固体撮像素子およびその製造方法
JP2006229206A (ja) * 2005-02-14 2006-08-31 Samsung Electronics Co Ltd 向上された感度を有するイメージセンサ及びその製造方法
JP2007149893A (ja) 2005-11-25 2007-06-14 Matsushita Electric Ind Co Ltd 固体撮像装置の製造方法、固体撮像装置及びカメラ
JP2008166677A (ja) 2006-12-08 2008-07-17 Sony Corp 固体撮像装置とその製造方法並びにカメラ
US7973271B2 (en) * 2006-12-08 2011-07-05 Sony Corporation Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera
JP5446484B2 (ja) * 2008-07-10 2014-03-19 ソニー株式会社 固体撮像装置とその製造方法および撮像装置
JP5402083B2 (ja) 2008-09-29 2014-01-29 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP2011023481A (ja) * 2009-07-14 2011-02-03 Panasonic Corp 固体撮像装置及びその製造方法
JP5418044B2 (ja) * 2009-07-30 2014-02-19 ソニー株式会社 固体撮像装置およびその製造方法

Also Published As

Publication number Publication date
CN102637705A (zh) 2012-08-15
JP2012164945A (ja) 2012-08-30
US20120202312A1 (en) 2012-08-09
US8846436B2 (en) 2014-09-30
CN102637705B (zh) 2014-10-08

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