CN102637705B - 半导体器件制造方法 - Google Patents
半导体器件制造方法 Download PDFInfo
- Publication number
- CN102637705B CN102637705B CN201210027892.5A CN201210027892A CN102637705B CN 102637705 B CN102637705 B CN 102637705B CN 201210027892 A CN201210027892 A CN 201210027892A CN 102637705 B CN102637705 B CN 102637705B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 106
- 238000004519 manufacturing process Methods 0.000 title claims description 54
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 238000006243 chemical reaction Methods 0.000 claims abstract description 52
- 239000012212 insulator Substances 0.000 claims description 140
- 238000000034 method Methods 0.000 claims description 61
- 239000000463 material Substances 0.000 claims description 54
- 238000005530 etching Methods 0.000 claims description 40
- 238000002360 preparation method Methods 0.000 claims 3
- 239000011229 interlayer Substances 0.000 abstract description 127
- 230000002093 peripheral effect Effects 0.000 abstract description 70
- 239000010410 layer Substances 0.000 description 99
- 230000006870 function Effects 0.000 description 19
- 229910052581 Si3N4 Inorganic materials 0.000 description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000011368 organic material Substances 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 239000012792 core layer Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
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- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/026—Wafer-level processing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-026355 | 2011-02-09 | ||
| JP2011026355A JP5709564B2 (ja) | 2011-02-09 | 2011-02-09 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102637705A CN102637705A (zh) | 2012-08-15 |
| CN102637705B true CN102637705B (zh) | 2014-10-08 |
Family
ID=46600899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210027892.5A Active CN102637705B (zh) | 2011-02-09 | 2012-02-09 | 半导体器件制造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8846436B2 (enExample) |
| JP (1) | JP5709564B2 (enExample) |
| CN (1) | CN102637705B (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4866972B1 (ja) * | 2011-04-20 | 2012-02-01 | パナソニック株式会社 | 固体撮像装置及びその製造方法 |
| US20120267741A1 (en) * | 2011-04-21 | 2012-10-25 | Panasonic Corporation | Solid-state imaging device and method for manufacturing the same |
| JP6039294B2 (ja) | 2012-08-07 | 2016-12-07 | キヤノン株式会社 | 半導体装置の製造方法 |
| JP2015114433A (ja) * | 2013-12-10 | 2015-06-22 | 富士通セミコンダクター株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP2015153870A (ja) * | 2014-02-13 | 2015-08-24 | キヤノン株式会社 | 半導体装置の製造方法、光電変換装置 |
| JP2017162925A (ja) * | 2016-03-08 | 2017-09-14 | キヤノン株式会社 | 撮像装置の製造方法 |
| JP2017220620A (ja) | 2016-06-09 | 2017-12-14 | キヤノン株式会社 | 固体撮像装置の製造方法 |
| JP6574808B2 (ja) * | 2016-07-01 | 2019-09-11 | キヤノン株式会社 | 撮像装置 |
| US10319765B2 (en) * | 2016-07-01 | 2019-06-11 | Canon Kabushiki Kaisha | Imaging device having an effective pixel region, an optical black region and a dummy region each with pixels including a photoelectric converter |
| JP7086558B2 (ja) * | 2016-10-28 | 2022-06-20 | キヤノン株式会社 | 光電変換装置および撮像システム |
| US10763298B2 (en) | 2016-10-28 | 2020-09-01 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus and image pickup system |
| EP3955300A1 (en) * | 2020-08-11 | 2022-02-16 | Infineon Technologies Dresden GmbH & Co . KG | Device for an image sensor, image sensor for an optical camera and optical camera |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1745478A (zh) * | 2002-12-13 | 2006-03-08 | 索尼株式会社 | 固态成像装置及其制造方法 |
| CN101197386A (zh) * | 2006-12-08 | 2008-06-11 | 索尼株式会社 | 固体摄像装置及其制造方法和照相机 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61173251A (ja) * | 1985-01-28 | 1986-08-04 | Mitsubishi Electric Corp | フオトマスクの製造方法 |
| JP2002057318A (ja) | 2000-08-07 | 2002-02-22 | Sony Corp | 固体撮像素子及びその製造方法 |
| KR20110015473A (ko) * | 2002-12-13 | 2011-02-15 | 소니 주식회사 | 고체 촬상 소자 및 그 제조방법 |
| JP2008103757A (ja) * | 2002-12-25 | 2008-05-01 | Sony Corp | 固体撮像素子およびその製造方法 |
| JP2006229206A (ja) * | 2005-02-14 | 2006-08-31 | Samsung Electronics Co Ltd | 向上された感度を有するイメージセンサ及びその製造方法 |
| JP2007149893A (ja) | 2005-11-25 | 2007-06-14 | Matsushita Electric Ind Co Ltd | 固体撮像装置の製造方法、固体撮像装置及びカメラ |
| EP1930950B1 (en) * | 2006-12-08 | 2012-11-07 | Sony Corporation | Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera |
| JP5446484B2 (ja) * | 2008-07-10 | 2014-03-19 | ソニー株式会社 | 固体撮像装置とその製造方法および撮像装置 |
| JP5402083B2 (ja) | 2008-09-29 | 2014-01-29 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
| JP2011023481A (ja) * | 2009-07-14 | 2011-02-03 | Panasonic Corp | 固体撮像装置及びその製造方法 |
| JP5418044B2 (ja) * | 2009-07-30 | 2014-02-19 | ソニー株式会社 | 固体撮像装置およびその製造方法 |
-
2011
- 2011-02-09 JP JP2011026355A patent/JP5709564B2/ja active Active
-
2012
- 2012-02-06 US US13/366,577 patent/US8846436B2/en active Active
- 2012-02-09 CN CN201210027892.5A patent/CN102637705B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1745478A (zh) * | 2002-12-13 | 2006-03-08 | 索尼株式会社 | 固态成像装置及其制造方法 |
| CN101197386A (zh) * | 2006-12-08 | 2008-06-11 | 索尼株式会社 | 固体摄像装置及其制造方法和照相机 |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2002-57318A 2002.02.22 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102637705A (zh) | 2012-08-15 |
| JP2012164945A (ja) | 2012-08-30 |
| JP5709564B2 (ja) | 2015-04-30 |
| US20120202312A1 (en) | 2012-08-09 |
| US8846436B2 (en) | 2014-09-30 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |