JP5700665B2 - 光電変換装置の作製方法 - Google Patents

光電変換装置の作製方法 Download PDF

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Publication number
JP5700665B2
JP5700665B2 JP2011128179A JP2011128179A JP5700665B2 JP 5700665 B2 JP5700665 B2 JP 5700665B2 JP 2011128179 A JP2011128179 A JP 2011128179A JP 2011128179 A JP2011128179 A JP 2011128179A JP 5700665 B2 JP5700665 B2 JP 5700665B2
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JP
Japan
Prior art keywords
semiconductor layer
electrode
photoelectric conversion
separation groove
conversion device
Prior art date
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Expired - Fee Related
Application number
JP2011128179A
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English (en)
Japanese (ja)
Other versions
JP2012019208A5 (https=
JP2012019208A (ja
Inventor
和夫 西
和夫 西
貴史 廣瀬
貴史 廣瀬
史人 井坂
史人 井坂
楠本　直人
直人 楠本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2011128179A priority Critical patent/JP5700665B2/ja
Publication of JP2012019208A publication Critical patent/JP2012019208A/ja
Publication of JP2012019208A5 publication Critical patent/JP2012019208A5/ja
Application granted granted Critical
Publication of JP5700665B2 publication Critical patent/JP5700665B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/35—Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Photovoltaic Devices (AREA)
JP2011128179A 2010-06-09 2011-06-08 光電変換装置の作製方法 Expired - Fee Related JP5700665B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011128179A JP5700665B2 (ja) 2010-06-09 2011-06-08 光電変換装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010131841 2010-06-09
JP2010131841 2010-06-09
JP2011128179A JP5700665B2 (ja) 2010-06-09 2011-06-08 光電変換装置の作製方法

Publications (3)

Publication Number Publication Date
JP2012019208A JP2012019208A (ja) 2012-01-26
JP2012019208A5 JP2012019208A5 (https=) 2014-05-22
JP5700665B2 true JP5700665B2 (ja) 2015-04-15

Family

ID=45095240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011128179A Expired - Fee Related JP5700665B2 (ja) 2010-06-09 2011-06-08 光電変換装置の作製方法

Country Status (2)

Country Link
US (1) US20110303272A1 (https=)
JP (1) JP5700665B2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5912404B2 (ja) 2010-10-29 2016-04-27 株式会社半導体エネルギー研究所 光電変換装置
KR20130136739A (ko) * 2012-06-05 2013-12-13 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR101393743B1 (ko) * 2012-06-28 2014-05-13 엘지이노텍 주식회사 태양전지 및 이의 제조 방법
EP3718145A4 (en) * 2017-11-30 2021-06-23 China Triumph International Engineering Co., Ltd. Thin film device with additional conductive lines and method for producing it

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6254478A (ja) * 1985-08-24 1987-03-10 Semiconductor Energy Lab Co Ltd 光電変換装置
JPS6269566A (ja) * 1985-09-21 1987-03-30 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPS6284569A (ja) * 1985-10-08 1987-04-18 Sanyo Electric Co Ltd 光起電力装置の製造方法
US4981525A (en) * 1988-02-19 1991-01-01 Sanyo Electric Co., Ltd. Photovoltaic device
WO1992007386A1 (en) * 1990-10-15 1992-04-30 United Solar Systems Corporation Monolithic solar cell array and method for its manufacture
JPH04336471A (ja) * 1991-05-13 1992-11-24 Canon Inc 半導体薄膜のピンホールの除去方法
US6720576B1 (en) * 1992-09-11 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and photoelectric conversion device
US5385848A (en) * 1993-09-20 1995-01-31 Iowa Thin Film Technologies, Inc Method for fabricating an interconnected array of semiconductor devices
TW387152B (en) * 1996-07-24 2000-04-11 Tdk Corp Solar battery and manufacturing method thereof
US7276453B2 (en) * 2004-08-10 2007-10-02 E.I. Du Pont De Nemours And Company Methods for forming an undercut region and electronic devices incorporating the same
US20070079866A1 (en) * 2005-10-07 2007-04-12 Applied Materials, Inc. System and method for making an improved thin film solar cell interconnect
TW200849621A (en) * 2006-12-21 2008-12-16 Helianthos Bv Method for making solar sub-cells from a solar cell
EP1970951A3 (en) * 2007-03-13 2009-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

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Publication number Publication date
JP2012019208A (ja) 2012-01-26
US20110303272A1 (en) 2011-12-15

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