JP5698947B2 - 電子機器用放熱板およびその製造方法 - Google Patents

電子機器用放熱板およびその製造方法 Download PDF

Info

Publication number
JP5698947B2
JP5698947B2 JP2010224217A JP2010224217A JP5698947B2 JP 5698947 B2 JP5698947 B2 JP 5698947B2 JP 2010224217 A JP2010224217 A JP 2010224217A JP 2010224217 A JP2010224217 A JP 2010224217A JP 5698947 B2 JP5698947 B2 JP 5698947B2
Authority
JP
Japan
Prior art keywords
alloy
layer
mass
less
heat sink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010224217A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011129880A (ja
Inventor
星明 寺尾
星明 寺尾
小日置　英明
英明 小日置
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Steel Corp
JFE Precision Corp
Original Assignee
JFE Steel Corp
JFE Precision Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JFE Steel Corp, JFE Precision Corp filed Critical JFE Steel Corp
Priority to JP2010224217A priority Critical patent/JP5698947B2/ja
Publication of JP2011129880A publication Critical patent/JP2011129880A/ja
Application granted granted Critical
Publication of JP5698947B2 publication Critical patent/JP5698947B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • B22F3/26—Impregnating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0425—Copper-based alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/045—Alloys based on refractory metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/06—Alloys based on chromium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C30/00—Alloys containing less than 50% by weight of each constituent
    • C22C30/02—Alloys containing less than 50% by weight of each constituent containing copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/11—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of chromium or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18—High-melting or refractory metals or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
    • B22F2007/042—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method
    • B22F2007/045—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method accompanied by fusion or impregnation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Powder Metallurgy (AREA)
  • Laminated Bodies (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Metal Rolling (AREA)
JP2010224217A 2009-10-01 2010-10-01 電子機器用放熱板およびその製造方法 Active JP5698947B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010224217A JP5698947B2 (ja) 2009-10-01 2010-10-01 電子機器用放熱板およびその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009229270 2009-10-01
JP2009229270 2009-10-01
JP2010224217A JP5698947B2 (ja) 2009-10-01 2010-10-01 電子機器用放熱板およびその製造方法

Publications (2)

Publication Number Publication Date
JP2011129880A JP2011129880A (ja) 2011-06-30
JP5698947B2 true JP5698947B2 (ja) 2015-04-08

Family

ID=43825887

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010224217A Active JP5698947B2 (ja) 2009-10-01 2010-10-01 電子機器用放熱板およびその製造方法

Country Status (6)

Country Link
US (1) US9299636B2 (ko)
EP (1) EP2485257B1 (ko)
JP (1) JP5698947B2 (ko)
KR (1) KR101679104B1 (ko)
CN (1) CN102612745B (ko)
WO (1) WO2011040044A1 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012221971A (ja) * 2011-04-04 2012-11-12 Sumitomo Metal Electronics Devices Inc 放熱板及びこれを用いる高放熱型半導体素子収納用パッケージ
DE102014213490C5 (de) * 2014-07-10 2020-06-18 Continental Automotive Gmbh Kühlvorrichtung, Verfahren zur Herstellung einer Kühlvorrichtung und Leistungsschaltung
KR101691724B1 (ko) * 2015-04-09 2016-12-30 주식회사 더굿시스템 고출력 소자용 방열판재
US9870995B2 (en) * 2015-06-18 2018-01-16 Taiwan Semiconductor Manufacturing Co., Ltd. Formation of copper layer structure with self anneal strain improvement
JP6233677B1 (ja) * 2016-08-31 2017-11-22 Jfe精密株式会社 放熱板及びその製造方法
WO2018047988A1 (ko) * 2016-09-06 2018-03-15 주식회사 더굿시스템 고출력 소자용 방열판재
DE102016218522B3 (de) 2016-09-27 2017-06-22 Jenoptik Laser Gmbh Optische oder optoelektronische Baugruppe und Verfahren zur Herstellung dafür
JP6981846B2 (ja) * 2017-10-26 2021-12-17 Jfe精密株式会社 放熱板及びその製造方法
JP6455896B1 (ja) * 2017-11-18 2019-01-23 Jfe精密株式会社 放熱板及びその製造方法
JP6994644B2 (ja) * 2017-12-01 2022-01-14 パナソニックＩｐマネジメント株式会社 接合体と接合方法および接合材料
JP6462172B1 (ja) * 2018-08-02 2019-01-30 Jfe精密株式会社 放熱板及びその製造方法
JP7139862B2 (ja) 2018-10-15 2022-09-21 株式会社デンソー 半導体装置
CN112958625B (zh) * 2021-01-28 2023-02-21 广西南南铝加工有限公司 一种铝合金超宽板的制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2860037B2 (ja) * 1993-03-15 1999-02-24 東京タングステン株式会社 半導体装置用放熱基板の製造方法
US6271585B1 (en) * 1997-07-08 2001-08-07 Tokyo Tungsten Co., Ltd. Heat sink substrate consisting essentially of copper and molybdenum and method of manufacturing the same
JPH11284111A (ja) * 1998-03-30 1999-10-15 Sumitomo Special Metals Co Ltd ヒートシンク部材及びその製造方法、並びにヒートシンク部材を用いた半導体パッケージ
JP3267565B2 (ja) 1998-08-27 2002-03-18 日本金属工業株式会社 複数材料の多層重ね熱間圧延接合により微細複合組織を有する金属板の製造方法
DE10010723B4 (de) 2000-03-04 2005-04-07 Metalor Technologies International Sa Verfahren zum Herstellen eines Kontaktwerkstoff-Halbzeuges für Kontaktstücke für Vakuumschaltgeräte sowie Kontaktwerkstoff-Halbzeuge und Kontaktstücke für Vakuumschaltgeräte
DE60113797T2 (de) 2000-04-14 2006-06-08 A.L.M.T. Corp. Material für eine wärme-abführende platte auf der ein halbleiter montiert ist, herstellungsmethode und keramisches gehäuse,produziert unter verwendung derselben
JP4615312B2 (ja) 2002-10-28 2011-01-19 株式会社アライドマテリアル 複合材料、その製造方法およびそれを用いた部材
JP2004249589A (ja) 2003-02-20 2004-09-09 Toshiba Corp 銅−モリブデン複合材料およびそれを用いたヒートシンク
JP4213134B2 (ja) 2004-04-15 2009-01-21 Ｊｆｅ精密株式会社 Ｃｕ−Ｃｒ合金及びＣｕ−Ｃｒ合金の製造方法
JP4302579B2 (ja) * 2004-06-03 2009-07-29 日鉱金属株式会社 高強度高導電性電子機器用銅合金
JP4799069B2 (ja) 2005-07-28 2011-10-19 Ｊｆｅ精密株式会社 電子機器で用いる放熱板
JP2007142126A (ja) 2005-11-18 2007-06-07 Allied Material Corp 複合材料及び半導体搭載用放熱基板、及びそれを用いたセラミックパッケージ
CN101384739B (zh) 2006-02-15 2011-01-19 Jfe精密株式会社 Cr-Cu合金、其制造方法、半导体用散热板和半导体用散热部件
JP4138844B2 (ja) 2006-02-15 2008-08-27 Ｊｆｅ精密株式会社 Ｃｒ−Ｃｕ合金およびその製造方法ならびに半導体用放熱板と半導体用放熱部品
JP5030633B2 (ja) 2007-03-26 2012-09-19 Ｊｆｅスチール株式会社 Ｃｒ−Ｃｕ合金板、半導体用放熱板及び半導体用放熱部品
WO2009008457A1 (ja) 2007-07-09 2009-01-15 Jfe Precision Corporation 電子部品用放熱部品、電子部品用ケース、電子部品用キャリアおよび電子部品用パッケージ

Also Published As

Publication number Publication date
EP2485257B1 (en) 2016-06-22
KR101679104B1 (ko) 2016-11-23
EP2485257A1 (en) 2012-08-08
CN102612745A (zh) 2012-07-25
KR20120095355A (ko) 2012-08-28
US9299636B2 (en) 2016-03-29
EP2485257A4 (en) 2014-03-12
US20120186800A1 (en) 2012-07-26
CN102612745B (zh) 2016-02-24
WO2011040044A1 (ja) 2011-04-07
JP2011129880A (ja) 2011-06-30

Similar Documents

Publication Publication Date Title
JP5698947B2 (ja) 電子機器用放熱板およびその製造方法
KR102422607B1 (ko) 접합체, 히트 싱크가 부착된 파워 모듈용 기판, 히트 싱크, 및 접합체의 제조 방법, 히트 싱크가 부착된 파워 모듈용 기판의 제조 방법, 히트 싱크의 제조 방법
KR102324373B1 (ko) 방열판 및 그 제조 방법
WO2009139472A1 (ja) パワーモジュール用基板、パワーモジュール、及びパワーモジュール用基板の製造方法
TW201526171A (zh) 接合體之製造方法及功率模組用基板之製造方法
CN106489197B (zh) 接合体、自带散热器的功率模块用基板、散热器、接合体的制造方法、自带散热器的功率模块用基板的制造方法及散热器的制造方法
JP2011124585A (ja) セラミックス配線基板、その製造方法及び半導体モジュール
TWI683403B (zh) 附有散熱片之電源模組用基板的製造方法
JP4104253B2 (ja) 基板一体型構造体
JP5030633B2 (ja) Ｃｒ−Ｃｕ合金板、半導体用放熱板及び半導体用放熱部品
JP6870767B2 (ja) 銅／セラミックス接合体、及び、絶縁回路基板
JP4138844B2 (ja) Ｃｒ−Ｃｕ合金およびその製造方法ならびに半導体用放熱板と半導体用放熱部品
TWI744474B (zh) 陶瓷／鋁接合體、絕緣電路基板、ｌｅｄ模組、陶瓷構件、陶瓷／鋁接合體之製造方法、絕緣電路基板之製造方法
JP2011082502A (ja) パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、パワーモジュール及びパワーモジュール用基板の製造方法
TW201617300A (zh) 陶瓷／鋁接合體之製造方法、電源模組用基板之製造方法及陶瓷／鋁接合體、電源模組用基板
WO2016167217A1 (ja) 接合体、ヒートシンク付パワーモジュール用基板、ヒートシンク、及び、接合体の製造方法、ヒートシンク付パワーモジュール用基板の製造方法、ヒートシンクの製造方法
TWI780113B (zh) 陶瓷／鋁－碳化矽複合材料接合體之製造方法、及附散熱塊之功率模組用基板之製造方法
JP5211314B2 (ja) Ｃｒ−Ｃｕ合金板およびそれを用いた電子機器用放熱板と電子機器用放熱部品
JP2011082350A (ja) 電子機器用放熱基板部品
WO2022224949A1 (ja) 銅／セラミックス接合体、および、絶縁回路基板
WO2023286858A1 (ja) 銅／セラミックス接合体、絶縁回路基板、および、銅／セラミックス接合体の製造方法、絶縁回路基板の製造方法
WO2022224946A1 (ja) 銅／セラミックス接合体、および、絶縁回路基板
WO2022224958A1 (ja) 銅／セラミックス接合体、および、絶縁回路基板
JP2016111328A (ja) 放熱基板と、それを使用した半導体パッケージと半導体モジュール
JP2023020266A (ja) 銅／セラミックス接合体、および、絶縁回路基板

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110421

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20110421

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130802

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140620

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140708

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140902

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150203

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150216

R150 Certificate of patent or registration of utility model

Ref document number: 5698947

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250