WO2023286858A1 - 銅/セラミックス接合体、絶縁回路基板、および、銅/セラミックス接合体の製造方法、絶縁回路基板の製造方法 - Google Patents
銅/セラミックス接合体、絶縁回路基板、および、銅/セラミックス接合体の製造方法、絶縁回路基板の製造方法 Download PDFInfo
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- WO2023286858A1 WO2023286858A1 PCT/JP2022/027861 JP2022027861W WO2023286858A1 WO 2023286858 A1 WO2023286858 A1 WO 2023286858A1 JP 2022027861 W JP2022027861 W JP 2022027861W WO 2023286858 A1 WO2023286858 A1 WO 2023286858A1
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- copper
- ceramic
- ceramic substrate
- active metal
- copper plate
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- 239000010949 copper Substances 0.000 title claims abstract description 199
- 239000000919 ceramic Substances 0.000 title claims abstract description 198
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 195
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 191
- 239000000758 substrate Substances 0.000 title claims description 117
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 120
- 239000002184 metal Substances 0.000 claims abstract description 119
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 51
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 67
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 66
- 229910052799 carbon Inorganic materials 0.000 claims description 66
- 238000010438 heat treatment Methods 0.000 claims description 36
- 238000007599 discharging Methods 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 28
- 229910017944 Ag—Cu Inorganic materials 0.000 claims description 18
- 229910045601 alloy Inorganic materials 0.000 claims description 16
- 239000000956 alloy Substances 0.000 claims description 16
- 239000011261 inert gas Substances 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 11
- 150000002739 metals Chemical class 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 239000007791 liquid phase Substances 0.000 claims description 9
- 238000003475 lamination Methods 0.000 claims description 8
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- 238000005304 joining Methods 0.000 claims description 4
- 150000001879 copper Chemical class 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 21
- 238000001816 cooling Methods 0.000 description 17
- 239000010936 titanium Substances 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 238000005219 brazing Methods 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000013507 mapping Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004868 gas analysis Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910017945 Cu—Ti Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011817 metal compound particle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/04—Ceramic interlayers
- C04B2237/08—Non-oxidic interlayers
- C04B2237/083—Carbide interlayers, e.g. silicon carbide interlayers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/04—Ceramic interlayers
- C04B2237/08—Non-oxidic interlayers
- C04B2237/086—Carbon interlayers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/125—Metallic interlayers based on noble metals, e.g. silver
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
- C04B2237/127—The active component for bonding being a refractory metal
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/343—Alumina or aluminates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/366—Aluminium nitride
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/368—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/407—Copper
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/60—Forming at the joining interface or in the joining layer specific reaction phases or zones, e.g. diffusion of reactive species from the interlayer to the substrate or from a substrate to the joining interface, carbide forming at the joining interface
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
Definitions
- the present invention provides a copper/ceramic joined body in which a copper member made of copper or a copper alloy and a ceramic member are joined, an insulated circuit board in which a copper plate made of copper or a copper alloy is joined to the surface of a ceramic substrate, Also, the present invention relates to a method for manufacturing a copper/ceramic bonded body and a method for manufacturing an insulated circuit board.
- a power module, an LED module, and a thermoelectric module have a structure in which a power semiconductor element, an LED element, and a thermoelectric element are joined to an insulating circuit board in which a circuit layer made of a conductive material is formed on one side of an insulating layer.
- power semiconductor elements for high power control used to control wind power generation, electric vehicles, hybrid vehicles, etc. generate a large amount of heat during operation.
- Patent Document 1 proposes an insulated circuit board in which a circuit layer and a metal layer are formed by bonding copper plates to one side and the other side of a ceramic substrate.
- copper plates are arranged on one surface and the other surface of a ceramic substrate with an Ag—Cu—Ti brazing material interposed therebetween, and the copper plates are joined by heat treatment (so-called active metal brazing method).
- Patent Document 2 proposes a power module substrate in which a copper plate made of copper or a copper alloy and a ceramic substrate made of AlN or Al 2 O 3 are bonded using a bonding material containing Ag and Ti. ing. Furthermore, Patent Document 3 proposes a power module substrate in which a copper plate made of copper or a copper alloy and a ceramic substrate made of silicon nitride are bonded using a bonding material containing Ag and Ti. As described above, when a copper plate and a ceramic substrate are bonded using a bonding material containing Ti, Ti, which is an active metal, reacts with the ceramic substrate, thereby improving the wettability of the bonding material and the copper plate. The bonding strength with the ceramic substrate is improved.
- the heat generation temperature of the semiconductor elements mounted on the insulated circuit board tends to be higher, and the insulated circuit board is required to have higher cooling/heating cycle reliability to withstand severe cooling/heating cycles. It is Here, as described above, when a copper plate and a ceramic substrate are bonded using a bonding material containing Ti, the vicinity of the bonding interface becomes hard, cracks occur in the ceramic member during thermal cycle loading, and the thermal cycle reliability is improved. was likely to decline.
- An object of the present invention is to provide a body, an insulated circuit board comprising this copper/ceramic bonded body, a method for manufacturing the copper/ceramic bonded body, and a method for manufacturing an insulated circuit board.
- the inventors of the present invention conducted intensive studies. It was found that the metal reacts with carbon to form an active metal carbide, and hardening by the active metal carbide hardens the bonding interface. For this reason, the present inventors have found that by optimizing the amount of active metal carbide present, it is possible to suppress the occurrence of cracks in the ceramic member during thermal cycle loads.
- a copper/ceramic joined body is a copper member obtained by joining a copper member made of copper or a copper alloy and a ceramic member.
- a ceramic bonded body wherein an active metal compound layer is formed on the ceramic member side at the bonding interface between the ceramic member and the copper member, and the active metal compound layer extends from the active metal compound layer to the copper member side by 10 ⁇ m.
- the area ratio of the active metal carbide in the region is set to 8% or less. It can also be said that the copper/ceramic joined body has the copper member and the ceramic member, and the copper member and the ceramic member are joined together.
- an active metal compound layer is formed on the ceramic member side at the joint interface between the ceramic member and the copper member, and the active metal compound layer Since the area ratio of the active metal carbide in the region from to the copper member side to 10 ⁇ m is set to 8% or less, it is possible to suppress the bonding interface from becoming hard, and suppress the occurrence of cracks in the ceramic member during thermal cycle loading. can do.
- the thickness t1 of the active metal compound layer is in the range of 0.05 ⁇ m or more and 1.2 ⁇ m or less.
- the thickness t1 of the active metal compound layer is in the range of 0.05 ⁇ m or more and 1.2 ⁇ m or less, the ceramic member and the copper member are reliably and strongly bonded by the active metal, Hardening of the joint interface is further suppressed.
- an Ag—Cu alloy layer is formed on the copper member side at the bonding interface between the ceramic member and the copper member, and the Ag— It is preferable that the thickness t2 of the Cu alloy layer is in the range of 1 ⁇ m or more and 30 ⁇ m or less. In this case, the Ag of the bonding material sufficiently reacts with the copper member to reliably and firmly bond the ceramic member and the copper member together, and hardening of the bonding interface is further suppressed.
- An insulated circuit board is an insulated circuit board in which a copper plate made of copper or a copper alloy is bonded to a surface of a ceramic substrate, wherein the bonding interface between the ceramic substrate and the copper plate includes: An active metal compound layer is formed on the ceramic substrate side, and the area ratio of the active metal carbide in a region from the active metal compound layer to the copper plate side of 10 ⁇ m is 8% or less. It can also be said that the insulating circuit board has the ceramic substrate and the copper plate, and the copper plate is joined to the surface of the ceramic substrate.
- the active metal compound layer is formed on the ceramic substrate side at the bonding interface between the ceramic substrate and the copper plate, and the active metal compound layer extends from the copper plate. Since the area ratio of the active metal carbide in the region up to 10 ⁇ m to the side is set to 8% or less, it is possible to suppress the bonding interface from becoming hard and suppress the occurrence of cracks in the ceramic substrate during thermal cycle loading. .
- the thickness t1 of the active metal compound layer is in the range of 0.05 ⁇ m or more and 1.2 ⁇ m or less.
- the thickness t1 of the active metal compound layer is in the range of 0.05 ⁇ m or more and 1.2 ⁇ m or less, the ceramic substrate and the copper plate are reliably and strongly bonded by the active metal, Hardening of the interface is further suppressed.
- an Ag—Cu alloy layer is formed on the copper plate side at the bonding interface between the ceramic substrate and the copper plate, and the Ag—Cu alloy layer It is preferable that the thickness t2 is within the range of 1 ⁇ m or more and 30 ⁇ m or less. In this case, the Ag of the bonding material sufficiently reacts with the copper plate to ensure firm bonding between the ceramic substrate and the copper plate, and hardening of the bonding interface is further suppressed.
- a method for manufacturing a copper/ceramic bonded body is a method for manufacturing a copper/ceramic bonded body, in which a copper/ceramic bonded body is manufactured from the copper member and the ceramic member. , Ag and one or more active metals selected from Ti, Zr, Nb, and Hf.
- a laminating step of laminating the copper member and the ceramic member is charged into a heating furnace, and the pressure in the furnace is increased while introducing an inert gas into the furnace and discharging the gas in the furnace.
- a heat treatment is performed while the ceramic member is pressed in the stacking direction to generate a liquid phase at the interface between the copper member and the ceramic member, and then the liquid phase is solidified by cooling to solidify the copper member and the ceramic member. and a final joining step of joining the ceramic member.
- the laminate of the copper member and the ceramic member is charged into a heating furnace, an inert gas is introduced into the furnace, and an inert gas is introduced into the furnace.
- the amount of carbon between the copper member and the ceramic member is set to 200 ⁇ g/cm 2 or less. is preferred. In this case, since the amount of carbon between the copper member and the ceramic member is limited to 200 ⁇ g/cm 2 or less in the bonding material disposing step, the generation of active metal carbide during bonding can be further suppressed. can be done.
- a method of manufacturing an insulated circuit board according to an aspect of the present invention is a method of manufacturing an insulated circuit board described above, wherein Ag, Ti, Zr, a bonding material disposing step of disposing a bonding material containing one or more active metals selected from Nb and Hf; a lamination step of laminating the copper plate and the ceramic substrate via the bonding material;
- the laminate of the copper plate and the ceramic substrate is put into a heating furnace, and the pressure in the furnace is maintained within the range of 150 Pa or more and 700 Pa or more while introducing an inert gas into the furnace and discharging the gas in the furnace.
- the laminate of the copper plate and the ceramic substrate is placed in a heating furnace, an inert gas is introduced into the furnace, and the gas in the furnace is expelled. While discharging, the pressure in the furnace is maintained within a range of 150 Pa or more and 700 Pa or more and heated, and a carbon component discharging step is provided to discharge the carbon component between the copper plate and the ceramic substrate. It is possible to suppress the formation of active metal carbide in. Therefore, it is possible to suppress the bonding interface from becoming hard, and to suppress the occurrence of cracks in the ceramic substrate under thermal cycle load.
- the amount of carbon between the copper plate and the ceramic substrate is 200 ⁇ g/cm 2 or less in the step of disposing the bonding material. .
- the amount of carbon between the copper plate and the ceramic substrate is limited to 200 ⁇ g/cm 2 or less in the step of disposing the bonding material, it is possible to further suppress the generation of active metal carbide during bonding. can.
- a copper/ceramic joined body that can suppress the occurrence of cracks in a ceramic member even when a severe thermal cycle is applied and has excellent thermal cycle reliability, and the copper/ceramic joined body It is possible to provide an insulated circuit board made of, a method for manufacturing a copper/ceramic bonded body, and a method for manufacturing an insulated circuit board.
- FIG. 1 is a schematic explanatory diagram of a power module using an insulated circuit board according to an embodiment of the present invention
- FIG. FIG. 2 is an enlarged explanatory view of a bonding interface between a circuit layer and a metal layer of an insulated circuit board and a ceramic substrate according to an embodiment of the present invention
- 1 is a flowchart of a method for manufacturing an insulated circuit board according to an embodiment of the present invention
- FIG. It is a schematic explanatory drawing of the manufacturing method of the insulation circuit board which concerns on embodiment of this invention.
- FIG. 4 is an explanatory diagram showing a method of calculating the area ratio of active metal carbide in an example of the present invention.
- the copper/ceramic bonded body according to the present embodiment includes a ceramic substrate 11 as a ceramic member made of ceramics, and a copper plate 42 (circuit layer 12) and a copper plate 43 (metal layer 13) as copper members made of copper or a copper alloy. is an insulating circuit board 10 formed by bonding the .
- FIG. 1 shows a power module 1 having an insulated circuit board 10 according to this embodiment.
- This power module 1 includes an insulating circuit board 10 on which a circuit layer 12 and a metal layer 13 are arranged, and a semiconductor element 3 bonded to one surface (upper surface in FIG. 1) of the circuit layer 12 via a bonding layer 2. and a heat sink 5 arranged on the other side (lower side in FIG. 1) of the metal layer 13 .
- the semiconductor element 3 is made of a semiconductor material such as Si.
- the semiconductor element 3 and the circuit layer 12 are bonded via the bonding layer 2 .
- the bonding layer 2 is made of, for example, a Sn--Ag-based, Sn--In-based, or Sn--Ag--Cu-based solder material.
- the heat sink 5 is for dissipating heat from the insulating circuit board 10 described above.
- the heat sink 5 is made of copper or a copper alloy, and is made of phosphorus-deoxidized copper in this embodiment.
- the heat sink 5 is provided with a channel through which cooling fluid flows.
- the heat sink 5 and the metal layer 13 are joined by a solder layer 7 made of a solder material.
- the solder layer 7 is made of, for example, a Sn--Ag-based, Sn--In-based, or Sn--Ag--Cu-based solder material.
- the insulating circuit board 10 of the present embodiment includes a ceramic substrate 11, a circuit layer 12 provided on one surface (upper surface in FIG. 1) of the ceramic substrate 11, and a ceramic substrate. and a metal layer 13 disposed on the other surface (lower surface in FIG. 1) of the substrate 11 .
- the ceramics substrate 11 is made of ceramics such as silicon nitride (Si 3 N 4 ), aluminum nitride (AlN), alumina (Al 2 O 3 ), etc., which are excellent in insulation and heat dissipation.
- the ceramic substrate 11 is made of aluminum nitride (AlN), which has excellent heat dissipation properties.
- the thickness of the ceramic substrate 11 is set within a range of, for example, 0.2 mm or more and 1.5 mm or less, and is set to 0.635 mm in this embodiment.
- the circuit layer 12 is formed by bonding a copper plate 42 made of copper or a copper alloy to one surface (upper surface in FIG. 4) of the ceramic substrate 11. As shown in FIG. In this embodiment, the circuit layer 12 is formed by bonding a rolled plate of oxygen-free copper to the ceramic substrate 11 .
- the thickness of the copper plate 42 that forms the circuit layer 12 is set within a range of 0.1 mm or more and 2.0 mm or less, and is set to 0.6 mm in this embodiment.
- the metal layer 13 is formed by bonding a copper plate 43 made of copper or a copper alloy to the other surface of the ceramic substrate 11 (the lower surface in FIG. 4).
- the metal layer 13 is formed by bonding a rolled plate of oxygen-free copper to the ceramic substrate 11 .
- the thickness of the copper plate 43 that forms the metal layer 13 is set within a range of 0.1 mm or more and 2.0 mm or less, and is set to 0.6 mm in this embodiment.
- an active metal compound layer 21 and an Ag—Cu alloy layer 22 are formed in order from the ceramic substrate 11 side at the bonding interface between the ceramic substrate 11, the circuit layer 12 and the metal layer 13. ing.
- the active metal compound constituting the active metal compound layer 21 does not contain an active metal carbide. It can also be said that the active metal compound layer 21 is part of the ceramic substrate 11 . It can also be said that the Ag—Cu alloy layer 22 is part of the circuit layer 12 and the metal layer 13 . Therefore, the bonding interface between the ceramic substrate 11 and the circuit layer 12 and metal layer 13 (copper plates 42 and 43) is the interface between the active metal compound layer 21 and the Ag--Cu alloy layer 22.
- the bonding interface between the ceramic substrate 11 and the circuit layer 12 and the metal layer 13 (copper plates 42 and 43) is the active metal compound layer 21, the circuit layer 12 and the metal layer 13 (copper plate 42 , 43).
- the active metal compound layer 21 is a layer made of a compound of an active metal (one or more selected from Ti, Zr, Nb, and Hf) used in the bonding material 45 . More specifically, when the ceramic substrate is made of silicon nitride (Si 3 N 4 ) or aluminum nitride (AlN), the layer becomes a nitride of these active metals, and the ceramic substrate is made of alumina (Al 2 O 3 ), the layer consists of oxides of these active metals.
- the active metal compound layer 21 is formed by aggregating active metal compound particles.
- the average particle size of these particles is 10 nm or more and 100 nm or less.
- the active metal compound layer 21 is made of titanium nitride (TiN). That is, particles of titanium nitride (TiN) having an average particle diameter of 10 nm or more and 100 nm or less are aggregated and formed.
- active metal carbide 24 is present at the joint interface between the ceramic substrate 11 and the circuit layer 12 and the metal layer 13, as shown in FIG.
- the active metal carbide 24 in the field of view up to 10 ⁇ m from the surface of the active metal compound layer 21 toward the circuit layer 12 and the metal layer 13. area ratio is 8% or less.
- the thickness t1 of the active metal compound layer 21 formed at the bonding interface between the ceramic substrate 11 and the circuit layer 12 and metal layer 13 is within the range of 0.05 ⁇ m or more and 1.2 ⁇ m or less. It is preferable that Further, in the present embodiment, the thickness t2 of the Ag—Cu alloy layer 22 formed at the bonding interface between the ceramic substrate 11 and the circuit layer 12 and the metal layer 13 is preferably 1 ⁇ m or more and 30 ⁇ m or less. .
- FIG. 1 A method for manufacturing the insulated circuit board 10 according to the present embodiment will be described below with reference to FIGS. 3 and 4.
- FIG. 1 A method for manufacturing the insulated circuit board 10 according to the present embodiment will be described below with reference to FIGS. 3 and 4.
- a copper plate 42 to be the circuit layer 12 and a copper plate 43 to be the metal layer 13 are prepared. Then, a bonding material 45 is applied to the bonding surfaces of the copper plate 42 to be the circuit layer 12 and the copper plate 43 to be the metal layer 13 and dried.
- the coating thickness of the paste-like bonding material 45 is preferably within the range of 10 ⁇ m or more and 50 ⁇ m or less after drying. In this embodiment, the paste bonding material 45 is applied by screen printing.
- the bonding material 45 contains Ag and active metals (Ti, Zr, Nb, Hf).
- an Ag--Ti based brazing material (Ag--Cu--Ti based brazing material) is used as the bonding material 45.
- the Ag--Ti-based brazing material (Ag--Cu--Ti-based brazing material) contains, for example, 0% by mass or more and 45% by mass or less of Cu, and 0.5% by mass or more and 20% by mass of Ti, which is an active metal. It is preferable to use a composition having a content in the range of mass % or less, with the balance being Ag and unavoidable impurities.
- the specific surface area of Ag powder contained in the bonding material 45 is preferably 0.15 m 2 /g or more, more preferably 0.25 m 2 /g or more, and more preferably 0.40 m 2 /g or more. is more preferred.
- the specific surface area of the Ag powder contained in the bonding material 45 is preferably 1.40 m 2 /g or less, more preferably 1.00 m 2 /g or less, and 0.75 m 2 /g or less. is more preferable.
- the amount of carbon between the copper plates 42 and 43 and the ceramic substrate 11 is preferably within the range of 5 ⁇ g/cm 2 or more and 200 ⁇ g/cm 2 or less.
- the amount of carbon is the amount of carbon determined by the following method. First, regarding the organic components (components other than Ag powder and active metal powder) of the bonding material 45, the residue amount (%) when the temperature was raised from room temperature to 500° C. at 10° C./min in an Ar flow atmosphere was measured by TG-DTA. , and the amount of carbon in the organic component converted per application amount was obtained.
- the amount of carbon in the Ag powder and the active metal powder contained in the bonding material was measured by gas analysis (infrared absorption method).
- the sum of the amount of carbon in the organic component and the amount of carbon in the powder is the amount of carbon.
- This amount of carbon can be adjusted by adjusting the amount of carbon contained in the organic components (solvent, dispersant, etc.) contained in the bonding material 45, the Ag powder, and the active metal powder.
- the amount of carbon exceeds 200 ⁇ g/cm 2
- the discharge of carbon in the carbon component discharge step S03 described later becomes insufficient, and the precipitation density of the active metal carbide particles increases, causing hardening near the interface and thermal cycle. Reliability may decrease.
- the bonding material 45 particularly the Ag powder and the active metal powder, contains a certain amount of carbon that is difficult to decompose by heat as an inevitable impurity, it is difficult to reduce the amount of carbon to less than 5 ⁇ g/cm 2 .
- a copper plate 42 to be the circuit layer 12 is laminated on one surface (upper surface in FIG. 4) of the ceramic substrate 11 with a bonding material 45 interposed therebetween, and on the other surface (lower surface in FIG. 4) of the ceramic substrate 11 , a copper plate 43 to be the metal layer 13 is laminated with a bonding material 45 interposed therebetween.
- Carbon component discharge step S03 Next, the laminate of the copper plate 42, the ceramic substrate 11, and the copper plate 43 is put into a heating furnace, and heated while introducing an inert gas (He, Ar, etc.) into the furnace and discharging the gas in the furnace. , carbon components (carbon contained in organic components (solvent, dispersant, etc.), Ag powder and active metal powder) between the copper plates 42 and 43 and the ceramic substrate 11 are discharged.
- the pressure inside the heating furnace is set within the range of 10 ⁇ 6 Pa or more and 10 ⁇ 3 or less.
- the inert gas is introduced into the furnace and the in-furnace gas is discharged, and the introduction amount of the inert gas and the discharge amount of the in-furnace gas are adjusted so that the pressure in the furnace is within the range of 150 Pa or more and 700 Pa or less. adjust.
- the pressure in the furnace is less than 150 Pa
- the discharge of the carbon component becomes insufficient, and the deposition density of the active metal carbide particles increases, causing hardening in the vicinity of the interface and lowering the thermal cycle reliability.
- the pressure in the furnace exceeds 700 Pa
- the discharge of the carbon component is inhibited, and the precipitation density of the active metal carbide particles increases, hardening the vicinity of the interface and lowering the thermal cycle reliability.
- the heating temperature in the main bonding step S04 is preferably within the range of 800° C. or higher and 850° C. or lower.
- the sum of temperature integral values in the heating step from 780° C. to the heating temperature and the holding step at the heating temperature is preferably in the range of 7° C. ⁇ h or more and 120° C. ⁇ h or less.
- the pressure load in the main bonding step S04 is within the range of 0.029 MPa or more and 2.94 MPa or less. Note that the load may be applied from the carbon component discharge step S03.
- the degree of vacuum in the main bonding step S04 is preferably in the range of 1 ⁇ 10 ⁇ 6 Pa or more and 5 ⁇ 10 ⁇ 2 Pa or less.
- the cooling rate during cooling is preferably in the range of 2° C./min or more and 20° C./min or less.
- the cooling rate here is the cooling rate from the heating temperature to 780° C., which is the Ag—Cu eutectic temperature.
- the insulating circuit board 10 of the present embodiment is manufactured through the bonding material disposing step S01, the laminating step S02, the carbon component discharging step S03, and the main bonding step S04.
- Heat-sink bonding step S05 Next, the heat sink 5 is bonded to the other side of the metal layer 13 of the insulated circuit board 10 .
- the insulating circuit board 10 and the heat sink 5 are laminated with a solder material interposed therebetween and placed in a heating furnace.
- semiconductor element bonding step S06 Next, the semiconductor element 3 is soldered to one surface of the circuit layer 12 of the insulating circuit board 10 .
- the power module 1 shown in FIG. 1 is produced by the above-described steps.
- the insulating circuit board 10 (copper/ceramic bonded body) of the present embodiment configured as described above, at the bonding interface between the ceramic substrate 11, the circuit layer 12, and the metal layer 13, on the ceramic substrate 11 side,
- the active metal compound layer 21 is formed, and the area ratio of the active metal carbide 24 in the region from the active metal compound layer 21 to the circuit layer 12 and metal layer 13 side of 10 ⁇ m is set to 8% or less. Hardening of the ceramic substrate 11 can be suppressed, and the occurrence of cracks in the ceramic substrate 11 under thermal cycle load can be suppressed.
- the area ratio of the active metal carbide 24 is preferably 7% or less, more preferably 5% or less. Although it is preferable that there is no active metal carbide 24, the area ratio of the active metal carbide 24 contained as unavoidable impurities is 0.6% or more.
- the thickness t1 of the active metal compound layer 21 is in the range of 0.05 ⁇ m or more and 1.2 ⁇ m or less, the ceramic substrate 11 and the circuit layer are separated by the active metal. 12 and metal layer 13 are reliably and strongly bonded, and hardening of the bonding interface is further suppressed.
- the thickness t1 of the active metal compound layer 21 is preferably 0.08 ⁇ m or more and 1.0 ⁇ m or less, more preferably 0.15 ⁇ m or more and 0.6 ⁇ m or less.
- an Ag—Cu alloy layer 22 is formed at the joint interface between the ceramic substrate 11, the circuit layer 12 and the metal layer 13, and the Ag—Cu alloy layer 22 has a thickness t2 is in the range of 1 ⁇ m or more and 30 ⁇ m or less, Ag contained in the bonding material 45 sufficiently reacts with the copper plate 42 that becomes the circuit layer 12 and the copper plate 43 that becomes the metal layer 13 to form the ceramic substrate 11.
- the circuit layer 12 and the metal layer 13 are reliably and strongly bonded, and hardening of the bonding interface is further suppressed.
- the thickness t2 of the Ag—Cu alloy layer 22 is preferably 3 ⁇ m or more and 25 ⁇ m or less, more preferably 5 ⁇ m or more and 15 ⁇ m or less.
- the pressure in the furnace is increased while discharging the carbon component between the copper plate 42 serving as the circuit layer 12 and the copper plate 43 serving as the metal layer 13 and the ceramics substrate 11. Since the carbon component discharging step S03 is provided for discharging the carbon component between the copper plates 42 and 43 and the ceramic substrate 11 while maintaining the pressure within the range of 150 Pa or more and 700 Pa or more and heating, the active metal carbide 24 is removed during bonding. generation can be suppressed. Therefore, it is possible to suppress hardening of the joint interface, and it is possible to suppress the occurrence of cracks in the ceramic substrate 11 under thermal cycle load.
- the amount of carbon between the copper plate 42 that becomes the circuit layer 12 and the copper plate 43 that becomes the metal layer 13 and the ceramic substrate 11 is reduced to 200 ⁇ g. /cm 2 or less, the formation of the active metal carbide 24 during bonding can be further suppressed.
- the amount of carbon is preferably 170 ⁇ g/cm 2 or less, more preferably 150 ⁇ g/cm 2 or less.
- a power module is configured by mounting a semiconductor element on an insulated circuit board, but the present invention is not limited to this.
- an LED module may be configured by mounting an LED element on the circuit layer of the insulating circuit board, or a thermoelectric module may be configured by mounting a thermoelectric element on the circuit layer of the insulating circuit board.
- the ceramic substrate is made of aluminum nitride ( AlN).
- other ceramic substrates such as silicon nitride (Si 3 N 4 ) may be used.
- Ti was used as an example of the active metal contained in the bonding material. It suffices if it contains the above active metals. These active metals may be contained as hydrides.
- the circuit layer was described as being formed by bonding a rolled plate of oxygen-free copper to a ceramic substrate, but the present invention is not limited to this, and a copper piece punched out of a copper plate is used.
- a circuit layer may be formed by bonding to a ceramic substrate while being arranged in a circuit pattern. In this case, each copper piece should have the interface structure with the ceramic substrate as described above.
- the bonding material is provided on the bonding surface of the copper plate, but the present invention is not limited to this, and the bonding material may be provided between the ceramic substrate and the copper plate. Alternatively, a bonding material may be provided on the bonding surface of the ceramic substrate.
- a ceramic substrate (40 mm ⁇ 40 mm) shown in Table 1 was prepared.
- the thickness of AlN and Al 2 O 3 was 0.635 mm, and the thickness of Si 3 N 4 was 0.32 mm.
- a copper plate made of oxygen-free copper and having a thickness of 37 mm ⁇ 37 mm and having a thickness shown in Table 1 was prepared as a copper plate serving as a circuit layer and a metal layer.
- a bonding material containing Ag powder and active metal powder shown in Table 1 was applied to a copper plate serving as a circuit layer and a metal layer so that the target thickness after drying would be the value shown in Table 1.
- a paste material was used as the bonding material, and the amounts of Ag, Cu, and active metal were as shown in Table 1.
- the BET value (specific surface area) of the Ag powder was measured by using AUTOSORB-1 manufactured by QUANTACHRROME, vacuum deaeration by heating at 150 ° C. for 30 minutes as pretreatment, N 2 adsorption, liquid nitrogen 77 K, BET multipoint method. It was measured.
- the amount of carbon in the bonding material was measured as follows. First, regarding the organic component of the bonding material, the amount of residue (%) when the temperature was raised from room temperature to 500° C. at 10° C./min in an Ar flow atmosphere was measured by TG-DTA, and the organic component was converted per application amount. was determined. Next, the amount of carbon in the Ag powder and the active metal powder contained in the bonding material (the amount of carbon in the powder) was measured by gas analysis (infrared absorption method). The sum of the amount of carbon in the organic component and the amount of carbon in the powder is the amount of carbon, which is shown in the table.
- a copper plate which will be the circuit layer, was laminated on one side of the ceramic substrate.
- a copper plate serving as a metal layer was laminated on the other surface of the ceramic substrate.
- This laminate was put into a heating furnace. Then, as a carbon discharge step, the pressure in the heating furnace is set to 3 ⁇ 10 -3 Pa, then an inert gas (Ar gas) is introduced and the gas in the furnace is discharged, and the pressure in the furnace is set to the value shown in Table 2. adjusted to be Further, the temperature and time were set so that the temperature integral value within the range of 300° C. or higher and 650° C. or lower was as shown in Table 2.
- Ar gas inert gas
- the laminate was heated while being pressed in the lamination direction to generate an Ag—Cu liquid phase.
- the pressure load was set to 0.294 MPa, and the temperature integral values within the range of 780° C. or higher and 850° C. or lower were as shown in Table 2.
- the copper plate serving as the circuit layer, the ceramic substrate, and the metal plate serving as the metal layer were bonded to obtain an insulated circuit substrate (copper/ceramic bonded body).
- the area ratio of the active metal carbide, the thickness t1 of the active metal compound layer, the thickness t2 of the Ag—Cu alloy layer, and the thermal cycle reliability were evaluated as follows. and evaluated.
- the area S1 Elemental maps of Ag, Cu, active metals, and ceramic components in a region of 100 ⁇ m in width ⁇ 10 ⁇ m in thickness direction were obtained for five fields of view, respectively.
- the ceramic components are Al and N in the case of AlN, Al and O in the case of Al 2 O 3 , and Si and N in the case of Si 3 N 4 .
- the area excluding the overlapping portion of the active metal and other components was defined as "active metal carbide", and its area S2 was calculated.
- the area ratio of the active metal carbide was defined as 100 ⁇ S2/S1, and Table 2 shows the average values of 5 fields of view and a total of 10 fields of view. If the active metal compound layer has undulations, the region is set along the undulations.
- invention examples 1 to 3 using AlN as a ceramic substrate and comparative examples 1 and 2 are compared.
- the furnace pressure in the carbon component discharging step was set to 50 Pa, and the area ratio of the active metal carbide in the region from the active metal compound layer to the copper plate side of 10 ⁇ m was 13.2%.
- the furnace pressure in the carbon component discharging step was set to 1200 Pa, and the area ratio of the active metal carbide in the region from the active metal compound layer to the copper plate side of 10 ⁇ m was 11.3%.
- the thermal cycle test cracks occurred 50 times, indicating insufficient thermal cycle reliability.
- the pressure in the furnace in the carbon component discharge step was set to 150 Pa, 250 Pa, and 600 Pa, and the active metal carbide in the region from the active metal compound layer to the copper plate side up to 10 ⁇ m
- the area ratios were 7.9%, 2.7% and 6.6%.
- cracks occurred 300 times, 500 times, and 400 times, indicating excellent thermal cycle reliability.
- inventive examples 4 to 6 using Si 3 N 4 as the ceramic substrate and comparative examples 3 and 4 are compared.
- the furnace pressure in the carbon component discharging step was set to 80 Pa, and the area ratio of the active metal carbide in the region from the active metal compound layer to the copper plate side of 10 ⁇ m was 10.8%.
- the furnace pressure in the carbon component discharging step was set to 1500 Pa, and the area ratio of the active metal carbide in the region from the active metal compound layer to the copper plate side of 10 ⁇ m was 9.3%.
- the thermal cycle test cracks occurred 1400 times, indicating insufficient thermal cycle reliability.
- the furnace pressure in the carbon component discharge step was set to 600 Pa, 400 Pa, and 300 Pa, and the active metal carbide in the region from the active metal compound layer to the copper plate side up to 10 ⁇ m
- the area ratios were 5.9%, 0.6% and 2.1%.
- cracks occurred more than 1,800 times, more than 2,000 times, more than 2,000 times, indicating excellent cooling/heating cycle reliability.
- inventive examples 7 and 8 using Al 2 O 3 as the ceramic substrate and comparative example 5 are compared.
- the furnace pressure in the carbon component discharging step was set to 80 Pa, and the area ratio of the active metal carbide in the region from the active metal compound layer to the copper plate side of 10 ⁇ m was 11.2%.
- the furnace pressure in the carbon component discharging process was set to 1200 Pa, and the area ratio of the active metal carbide in the region from the active metal compound layer to the copper plate side of 10 ⁇ m was 10.7%.
- the furnace pressure in the carbon component discharge step was set to 500 Pa and 700 Pa, and the area ratio of the active metal carbide in the region from the active metal compound layer to the copper plate side of 10 ⁇ m was 3.6% and 6.8%.
- the cooling/heating cycle test cracks occurred 450 times and 500 times, indicating excellent cooling/heating cycle reliability.
- the copper/ceramic bonded body and insulating circuit board of this embodiment are suitably applied to power modules, LED modules and thermoelectric modules.
- Insulated circuit board (copper/ceramic joint) 11 Ceramic substrate (ceramic member) 12 circuit layer (copper member) 13 metal layer (copper member) 21 Active metal compound layer 22 Ag—Cu alloy layer
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Abstract
Description
本願は、2021年7月16日に、日本に出願された特願2021-117953号に基づき優先権を主張し、その内容をここに援用する。
例えば、風力発電、電気自動車、ハイブリッド自動車等を制御するために用いられる大電力制御用のパワー半導体素子は、動作時の発熱量が多いことから、これを搭載する基板としては、セラミックス基板と、このセラミックス基板の一方の面に導電性の優れた金属板を接合して形成した回路層と、セラミックス基板の他方の面に金属板を接合して形成した放熱用の金属層と、を備えた絶縁回路基板が、従来から広く用いられている。
さらに、特許文献3には、銅又は銅合金からなる銅板と、窒化ケイ素からなるセラミックス基板とが、AgおよびTiを含む接合材を用いて接合されたパワーモジュール用基板が提案されている。
前述のように、Tiを含む接合材を用いて銅板とセラミックス基板とを接合した場合には、活性金属であるTiがセラミックス基板と反応することにより、接合材の濡れ性が向上し、銅板とセラミックス基板との接合強度が向上することになる。
ここで、前述のように、Tiを含む接合材を用いて銅板とセラミックス基板とを接合した場合には、接合界面近傍が硬くなり、冷熱サイクル負荷時にセラミックス部材に割れが生じ、冷熱サイクル信頼性が低下するおそれがあった。
銅/セラミックス接合体は、前記銅部材と、前記セラミックス部材とを有し、前記銅部材と前記セラミックス部材とが接合されていると言うこともできる。
この場合、前記活性金属化合物層の厚さt1が0.05μm以上1.2μm以下の範囲内とされているので、活性金属によってセラミックス部材と銅部材とが確実に強固に接合されているとともに、接合界面が硬くなることがさらに抑制される。
この場合、接合材のAgが銅部材と十分に反応してセラミックス部材と銅部材とが確実に強固に接合されているとともに、接合界面が硬くなることがさらに抑制される。
絶縁回路基板は、前記セラミックス基板と、前記銅板とを有し、前記セラミックス基板の表面に前記銅板が接合されていると言うこともできる。
この場合、前記活性金属化合物層の厚さt1が0.05μm以上1.2μm以下の範囲内とされているので、活性金属によってセラミックス基板と銅板とが確実に強固に接合されているとともに、接合界面が硬くなることがさらに抑制される。
この場合、接合材のAgが銅板と十分に反応してセラミックス基板と銅板とが確実に強固に接合されているとともに、接合界面が硬くなることがさらに抑制される。
この場合、前記接合材配設工程において、前記銅部材と前記セラミックス部材との間におけるカーボン量を200μg/cm2以下に制限しているので、接合時における活性金属炭化物の生成をさらに抑制することができる。
この場合、前記接合材配設工程において、前記銅板と前記セラミックス基板との間におけるカーボン量を200μg/cm2以下に制限しているので、接合時における活性金属炭化物の生成をさらに抑制することができる。
本実施形態に係る銅/セラミックス接合体は、セラミックスからなるセラミックス部材としてのセラミックス基板11と、銅又は銅合金からなる銅部材としての銅板42(回路層12)および銅板43(金属層13)とが接合されてなる絶縁回路基板10である。図1に、本実施形態である絶縁回路基板10を備えたパワーモジュール1を示す。
接合層2は、例えばSn-Ag系、Sn-In系、若しくはSn-Ag-Cu系のはんだ材で構成されている。
なお、本実施形態においては、ヒートシンク5と金属層13とが、はんだ材からなるはんだ層7によって接合されている。このはんだ層7は、例えばSn-Ag系、Sn-In系、若しくはSn-Ag-Cu系のはんだ材で構成されている。
本実施形態においては、回路層12は、無酸素銅の圧延板がセラミックス基板11に接合されることで形成されている。
なお、回路層12となる銅板42の厚さは0.1mm以上2.0mm以下の範囲内に設定されており、本実施形態では、0.6mmに設定されている。
本実施形態においては、金属層13は、無酸素銅の圧延板がセラミックス基板11に接合されることで形成されている。
なお、金属層13となる銅板43の厚さは0.1mm以上2.0mm以下の範囲内に設定されており、本実施形態では、0.6mmに設定されている。
活性金属化合物層21は、セラミックス基板11の一部であると言うこともできる。Ag-Cu合金層22は、回路層12および金属層13の一部であると言うこともできる。このため、セラミックス基板11と回路層12および金属層13(銅板42,43)との接合界面は、活性金属化合物層21とAg-Cu合金層22との界面である。Ag-Cu合金層22を有しない場合、セラミックス基板11と回路層12および金属層13(銅板42,43)との接合界面は、活性金属化合物層21と回路層12および金属層13(銅板42,43)との界面である。
ここで、活性金属化合物層21は接合材45で用いる活性金属(Ti,Zr,Nb,Hfから選択される1種以上)の化合物からなる層である。より具体的には、セラミックス基板が窒化ケイ素(Si3N4)、又は、窒化アルミニウム(AlN)からなる場合には、これらの活性金属の窒化物からなる層となり、セラミックス基板がアルミナ(Al2O3)である場合には、これらの活性金属の酸化物からなる層となる。
活性金属化合物層21は活性金属化合物の粒子が集合して形成されている。この粒子の平均粒径は10nm以上100nm以下である。
なお、本実施形態では、接合材45が活性金属としてTiを含有し、セラミックス基板11が窒化アルミニウムで構成されているため、活性金属化合物層21は、窒化チタン(TiN)で構成される。すなわち、平均粒径が10nm以上100nm以下の窒化チタン(TiN)の粒子が集合して形成されている。
ここで、セラミックス基板11と回路層12および金属層13との積層方向に沿った断面において、活性金属化合物層21の表面から回路層12および金属層13側へ10μmまでの視野における活性金属炭化物24の面積率が8%以下とされている。
また、本実施形態においては、セラミックス基板11と回路層12および金属層13との接合界面に形成されたAg-Cu合金層22の厚さt2が、1μm以上30μm以下とされていることが好ましい。
回路層12となる銅板42と、金属層13となる銅板43とを準備する。
そして、回路層12となる銅板42および金属層13となる銅板43の接合面に、接合材45を塗布し、乾燥させる。ペースト状の接合材45の塗布厚さは、乾燥後で10μm以上50μm以下の範囲内とすることが好ましい。
本実施形態では、スクリーン印刷によってペースト状の接合材45を塗布する。
このカーボン量は、接合材45に含まれる有機成分(溶媒、分散剤等)、Ag粉および活性金属粉に含まれるカーボン量により調整することができる。
次に、セラミックス基板11の一方の面(図4において上面)に、接合材45を介して回路層12となる銅板42を積層するとともに、セラミックス基板11の他方の面(図4において下面)に、接合材45を介して金属層13となる銅板43を積層する。
次に、銅板42とセラミックス基板11と銅板43との積層体を加熱炉内に装入し、炉内に不活性ガス(He,Ar等)を導入するとともに炉内ガスを排出しながら加熱し、銅板42,43とセラミックス基板11の間のカーボン成分(有機成分(溶媒、分散剤等)、Ag粉および活性金属粉に含まれるカーボン)を排出する。
カーボン成分排出工程S03においては、不活性ガスを導入する前に、加熱炉の炉内圧力を10-6Pa以上10-3以下の範囲内とする。そして、炉内への不活性ガスの導入および炉内ガスの排出を行い、炉内圧力が150Pa以上700Pa以下の範囲内となるように、不活性ガスの導入量および炉内ガスの排出量を調整する。
また、カーボン成分排出工程S03において、300℃以上650℃以下の範囲内における温度積分値を250℃・h以上1000℃・h以下の範囲内となるように、温度と時間を調整することが好ましい。
次に、銅板42とセラミックス基板11と銅板43とを加圧した状態で、真空雰囲気の加熱炉内で加熱し、接合材45を溶融する。その後、冷却を行うことにより、溶融した接合材45を凝固させて、回路層12となる銅板42とセラミックス基板11、セラミックス基板11と金属層13となる銅板43とを接合する。
また、本接合工程S04における加圧荷重は、0.029MPa以上2.94MPa以下の範囲内とすることが好ましい。なお、荷重はカーボン成分排出工程S03から付与されていても構わない。
さらに、本接合工程S04における真空度は、1×10-6Pa以上5×10-2Pa以下の範囲内とすることが好ましい。
また、冷却時における冷却速度は、2℃/min以上20℃/min以下の範囲内とすることが好ましい。なお、ここでの冷却速度は加熱温度からAg-Cu共晶温度である780℃までの冷却速度である。
次に、絶縁回路基板10の金属層13の他方の面側にヒートシンク5を接合する。
絶縁回路基板10とヒートシンク5とを、はんだ材を介して積層して加熱炉に装入し、はんだ層7を介して絶縁回路基板10とヒートシンク5とをはんだ接合する。
次に、絶縁回路基板10の回路層12の一方の面に、半導体素子3をはんだ付けにより接合する。
前述の工程により、図1に示すパワーモジュール1が製出される。
活性金属炭化物24の面積率は、好ましくは7%以下であり、より好ましくは5%以下である。活性金属炭化物24は無いことが好ましいが、不可避不純物として含まれる活性金属炭化物24の面積率は0.6%以上である。
活性金属化合物層21の厚さt1は、好ましくは0.08μm以上1.0μm以下であり、より好ましくは0.15μm以上0.6μm以下である。
Ag-Cu合金層22の厚さt2は、好ましくは3μm以上25μm以下であり、より好ましくは5μm以上15μm以下である。
カーボン量は、好ましくは170μg/cm2以下であり、より好ましくは150μg/cm2以下である。
例えば、本実施形態では、絶縁回路基板に半導体素子を搭載してパワーモジュールを構成するものとして説明したが、これに限定されることはない。例えば、絶縁回路基板の回路層にLED素子を搭載してLEDモジュールを構成してもよいし、絶縁回路基板の回路層に熱電素子を搭載して熱電モジュールを構成してもよい。
また、本実施形態では、銅板の接合面に接合材を配設するものとして説明したが、これに限定されることはなく、セラミックス基板と銅板の間に接合材が配設されていればよく、セラミックス基板の接合面に接合材を配設してもよい。
また、回路層および金属層となる銅板として、無酸素銅からなり、表1に示す厚さの37mm×37mmの銅板を準備した。
なお、接合材はペースト材を用い、Ag,Cu,活性金属の量は表1の通りとした。
また、Ag粉のBET値(比表面積)はQUANTACHRROME社製AUTOSORB-1を用い、前処理として150℃で30分加熱の真空脱気を行い、N2吸着、液体窒素77K、BET多点法で測定した。
まず、接合材の有機成分については、Arフロー雰囲気で室温から500℃まで10℃/minで昇温した時の残渣量(%)をTG-DTAにより測定し、塗布量当たりに換算した有機成分のカーボン量を求めた。次に、接合材に含まれるAg粉および活性金属粉のカーボン量(粉末のカーボン量)は、ガス分析(赤外線吸収法)によって測定した。これらの、有機成分のカーボン量と粉末のカーボン量との合計がカーボン量であり、これを表に記載した。
そして、加熱した積層体を冷却することにより、回路層となる銅板とセラミックス基板と金属層となる金属板を接合し、絶縁回路基板(銅/セラミックス接合体)を得た。
回路層および金属層とセラミックス基板との接合界面の断面を観察し、SEM-EDSにより活性金属化合物層からから回路層表面および金属層表面側に向けて、図5に示すように、面積S1=幅100μm×厚み方向10μmの領域におけるAg,Cu,活性金属およびセラミックス成分の元素マップをそれぞれ5視野取得した。なお、セラミックス成分は、AlNの場合はAl,Nであり、Al2O3の場合はAl,Oであり、Si3N4の場合はSi,Nとなる。
活性金属のマップにおいて、活性金属と他成分の重複部を除外した領域を「活性金属炭化物」とし、その面積S2を算出した。
活性金属炭化物の面積率=100×S2/S1と定義し、それぞれ5視野、計10視野の平均値を表2に記載した。なお、活性金属化合物層にうねりが生じている場合には、うねりに沿って領域を設定する。
回路層とセラミックス基板との接合界面、および、セラミックス基板と金属層との接合界面の断面を、走査型電子顕微鏡(カールツァイスNTS社製ULTRA55、加速電圧1.8kV)を用いて倍率30000倍で測定し、エネルギー分散型X線分析法により、N、O及び活性金属元素の元素マッピングをそれぞれ5視野取得した。活性金属元素とNまたはOが同一領域に存在する場合に活性金属化合物層が有ると判断した。
それぞれ5視野、計10視野で観察を行い、活性金属元素とNまたはOが同一領域に存在する範囲の面積を、測定した幅で割ったものの平均値を「活性金属化合物層の厚さ」として表2に記載した。
回路層とセラミックス基板との接合界面、および、セラミックス基板と金属層との接合界面の断面を、EPMA装置を用いて、Ag,Cu,活性金属の各元素マッピングを取得した。それぞれ5視野で各元素マッピングを取得した。
それぞれ5視野、計10視野で観察を行い、Ag+Cu+活性金属=100質量%としたとき、Ag濃度が15質量%以上である領域をAg-Cu合金層とし、その面積を求めて、測定領域の幅で割った値(面積/測定領域の幅)を求めた。その値の平均をAg-Cu合金層の厚さとして表2に記載した。
上述の絶縁回路基板を、セラミックス基板の材質に応じて、下記の冷熱サイクルを負荷し、SAT検査(超音波探傷検査)によりセラミックス割れの有無を判定した。評価結果を表2に示す。
AlN,Al2O3の場合:-40℃×10min←→150℃×10minを500サイクルまで50サイクル毎にSAT検査。
Si3N4の場合:-40℃×5min←→150℃×10minを2000サイクルまで200サイクル毎にSAT検査。
比較例1においては、カーボン成分排出工程における炉内圧力が50Paとされており、活性金属化合物層から銅板側へ10μmまでの領域における活性金属炭化物の面積率が13.2%となった。そして、冷熱サイクル試験において割れ発生回数が50回となり、冷熱サイクル信頼性が不十分であった。
比較例2においては、カーボン成分排出工程における炉内圧力が1200Paとされており、活性金属化合物層から銅板側へ10μmまでの領域における活性金属炭化物の面積率が11.3%となった。そして、冷熱サイクル試験において割れ発生回数が50回となり、冷熱サイクル信頼性が不十分であった。
比較例3においては、カーボン成分排出工程における炉内圧力が80Paとされており、活性金属化合物層から銅板側へ10μmまでの領域における活性金属炭化物の面積率が10.8%となった。そして、冷熱サイクル試験において割れ発生回数が1200回となり、冷熱サイクル信頼性が不十分であった。
比較例4においては、カーボン成分排出工程における炉内圧力が1500Paとされており、活性金属化合物層から銅板側へ10μmまでの領域における活性金属炭化物の面積率が9.3%となった。そして、冷熱サイクル試験において割れ発生回数が1400回となり、冷熱サイクル信頼性が不十分であった。
比較例5においては、カーボン成分排出工程における炉内圧力が80Paとされており、活性金属化合物層から銅板側へ10μmまでの領域における活性金属炭化物の面積率が11.2%となった。そして、冷熱サイクル試験において割れ発生回数が100回となり、冷熱サイクル信頼性が不十分であった。
比較例6においては、カーボン成分排出工程における炉内圧力が1200Paとされており、活性金属化合物層から銅板側へ10μmまでの領域における活性金属炭化物の面積率が10.7%となった。そして、冷熱サイクル試験において割れ発生回数が150回となり、冷熱サイクル信頼性が不十分であった。
11 セラミックス基板(セラミックス部材)
12 回路層(銅部材)
13 金属層(銅部材)
21 活性金属化合物層
22 Ag-Cu合金層
Claims (10)
- 銅又は銅合金からなる銅部材と、セラミックス部材とが接合されてなる銅/セラミックス接合体であって、
前記セラミックス部材と前記銅部材との接合界面において、前記セラミックス部材側には活性金属化合物層が形成されており、
前記活性金属化合物層から前記銅部材側へ10μmまでの領域における活性金属炭化物の面積率が8%以下とされていることを特徴とする銅/セラミックス接合体。 - 前記活性金属化合物層の厚さt1が0.05μm以上1.2μm以下の範囲内とされていることを特徴とする請求項1に記載の銅/セラミックス接合体。
- 前記セラミックス部材と前記銅部材との接合界面において、前記銅部材側にはAg-Cu合金層が形成されており、
前記Ag-Cu合金層の厚さt2が1μm以上30μm以下の範囲内とされていることを特徴とする請求項1または請求項2に記載の銅/セラミックス接合体。 - セラミックス基板の表面に、銅又は銅合金からなる銅板が接合されてなる絶縁回路基板であって、
前記セラミックス基板と前記銅板との接合界面において、前記セラミックス基板側には活性金属化合物層が形成されており、
前記活性金属化合物層から前記銅板側へ10μmまでの領域における活性金属炭化物の面積率が8%以下とされていることを特徴とする絶縁回路基板。 - 前記活性金属化合物層の厚さt1が0.05μm以上1.2μm以下の範囲内とされていることを特徴とすることを特徴とする請求項4に記載の絶縁回路基板。
- 前記セラミックス基板と前記銅板との接合界面において、前記銅板側にはAg-Cu合金層が形成されており、
前記Ag-Cu合金層の厚さt2が1μm以上30μm以下の範囲内とされていることを特徴とする請求項4または請求項5に記載の絶縁回路基板。 - 請求項1または請求項2に記載の銅/セラミックス接合体を製造する銅/セラミックス接合体の製造方法であって、
前記銅部材と前記セラミックス部材との間に、AgとTi,Zr,Nb,Hfから選択される1種以上の活性金属を含む接合材を配設する接合材配設工程と、
前記銅部材と前記セラミックス部材とを、前記接合材を介して積層する積層工程と、
前記銅部材と前記セラミックス部材との積層体を加熱炉に装入し、炉内に不活性ガスを導入するとともに炉内のガスを排出しながら、炉内の圧力を150Pa以上700Pa以上の範囲内に維持するとともに加熱し、前記銅部材と前記セラミックス部材との間のカーボン成分を排出するカーボン成分排出工程と、
前記接合材を介して積層された前記銅部材と前記セラミックス部材とを積層方向に加圧した状態で加熱処理し、前記銅部材と前記セラミックス部材の界面に液相を生じさせ、その後、冷却することで前記液相を凝固させて、前記銅部材と前記セラミックス部材とを接合する本接合工程と、
を備えていることを特徴とする銅/セラミックス接合体の製造方法。 - 前記接合材配設工程において、前記銅部材と前記セラミックス部材との間におけるカーボン量を200μg/cm2以下とすることを特徴とする請求項7に記載の銅/セラミックス接合体の製造方法。
- 請求項4または請求項5に記載の絶縁回路基板を製造する絶縁回路基板の製造方法であって、
前記銅板と前記セラミックス基板との間に、AgとTi,Zr,Nb,Hfから選択される1種以上の活性金属を含む接合材を配設する接合材配設工程と、
前記銅板と前記セラミックス基板とを、前記接合材を介して積層する積層工程と、
前記銅板と前記セラミックス基板との積層体を加熱炉に装入し、炉内に不活性ガスを導入するとともに炉内のガスを排出しながら、炉内の圧力を150Pa以上700Pa以上の範囲内に維持するとともに加熱し、前記銅板と前記セラミックス基板との間のカーボン成分を排出するカーボン成分排出工程と、
前記接合材を介して積層された前記銅板と前記セラミックス基板とを積層方向に加圧した状態で加熱処理し、前記銅板と前記セラミックス基板の界面に液相を生じさせ、その後、冷却することで前記液相を凝固させて、前記銅板と前記セラミックス基板とを接合する本接合工程と、
を備えていることを特徴とする絶縁回路基板の製造方法。 - 前記接合材配設工程において、前記銅板と前記セラミックス基板との間におけるカーボン量を200μg/cm2以下とすることを特徴とする請求項9に記載の絶縁回路基板の製造方法。
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JPH05170563A (ja) * | 1991-12-25 | 1993-07-09 | Kawasaki Steel Corp | 銅板とセラミックスの接合方法 |
WO2013002407A1 (ja) * | 2011-06-30 | 2013-01-03 | 日立金属株式会社 | ろう材、ろう材ペースト、セラミックス回路基板、セラミックスマスター回路基板及びパワー半導体モジュール |
WO2018180965A1 (ja) * | 2017-03-30 | 2018-10-04 | 株式会社 東芝 | セラミックス銅回路基板およびそれを用いた半導体装置 |
WO2021044854A1 (ja) * | 2019-09-02 | 2021-03-11 | 株式会社 東芝 | 接合体、回路基板、及び半導体装置 |
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JPS5757359U (ja) | 1980-09-22 | 1982-04-03 | ||
JP6904088B2 (ja) | 2016-06-30 | 2021-07-14 | 三菱マテリアル株式会社 | 銅/セラミックス接合体、及び、絶縁回路基板 |
JP3211856U (ja) | 2017-05-09 | 2017-08-10 | 株式会社アイエスピー | メジャー付きタオル |
JP2021117953A (ja) | 2020-01-27 | 2021-08-10 | 広洲 石黒 | デザイン思考エンジンの構成と定式化の方法 |
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- 2022-07-15 CN CN202280041985.5A patent/CN117480871A/zh active Pending
- 2022-07-15 WO PCT/JP2022/027861 patent/WO2023286858A1/ja active Application Filing
- 2022-07-15 US US18/560,166 patent/US20240274497A1/en active Pending
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH05170563A (ja) * | 1991-12-25 | 1993-07-09 | Kawasaki Steel Corp | 銅板とセラミックスの接合方法 |
WO2013002407A1 (ja) * | 2011-06-30 | 2013-01-03 | 日立金属株式会社 | ろう材、ろう材ペースト、セラミックス回路基板、セラミックスマスター回路基板及びパワー半導体モジュール |
WO2018180965A1 (ja) * | 2017-03-30 | 2018-10-04 | 株式会社 東芝 | セラミックス銅回路基板およびそれを用いた半導体装置 |
WO2021044854A1 (ja) * | 2019-09-02 | 2021-03-11 | 株式会社 東芝 | 接合体、回路基板、及び半導体装置 |
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JP2023013631A (ja) | 2023-01-26 |
US20240274497A1 (en) | 2024-08-15 |
DE112022003588T5 (de) | 2024-05-02 |
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