JP5692227B2 - 電力用半導体装置 - Google Patents

電力用半導体装置 Download PDF

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Publication number
JP5692227B2
JP5692227B2 JP2012522420A JP2012522420A JP5692227B2 JP 5692227 B2 JP5692227 B2 JP 5692227B2 JP 2012522420 A JP2012522420 A JP 2012522420A JP 2012522420 A JP2012522420 A JP 2012522420A JP 5692227 B2 JP5692227 B2 JP 5692227B2
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insulating film
well
well region
region
contact hole
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English (en)
Japanese (ja)
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JPWO2012001837A1 (ja
Inventor
史郎 日野
史郎 日野
三浦　成久
成久 三浦
中田　修平
修平 中田
大塚　健一
健一 大塚
昭裕 渡辺
昭裕 渡辺
古川　彰彦
彰彦 古川
中尾　之泰
之泰 中尾
昌之 今泉
昌之 今泉
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/143—VDMOS having built-in components the built-in components being PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2012522420A 2010-06-30 2011-02-08 電力用半導体装置 Active JP5692227B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012522420A JP5692227B2 (ja) 2010-06-30 2011-02-08 電力用半導体装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010149090 2010-06-30
JP2010149090 2010-06-30
PCT/JP2011/000684 WO2012001837A1 (ja) 2010-06-30 2011-02-08 電力用半導体装置
JP2012522420A JP5692227B2 (ja) 2010-06-30 2011-02-08 電力用半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014233404A Division JP6008145B2 (ja) 2010-06-30 2014-11-18 電力用半導体装置

Publications (2)

Publication Number Publication Date
JPWO2012001837A1 JPWO2012001837A1 (ja) 2013-08-22
JP5692227B2 true JP5692227B2 (ja) 2015-04-01

Family

ID=45401589

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JP2012522420A Active JP5692227B2 (ja) 2010-06-30 2011-02-08 電力用半導体装置
JP2014233404A Active JP6008145B2 (ja) 2010-06-30 2014-11-18 電力用半導体装置

Family Applications After (1)

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JP2014233404A Active JP6008145B2 (ja) 2010-06-30 2014-11-18 電力用半導体装置

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JP (2) JP5692227B2 (enExample)
WO (1) WO2012001837A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3540781A1 (en) 2018-03-16 2019-09-18 Hitachi Power Semiconductor Device, Ltd. Semiconductor device, power module, and power conversion device

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5994604B2 (ja) 2012-11-28 2016-09-21 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
US9577086B2 (en) 2013-04-03 2017-02-21 Mitsubishi Electric Corporation Semiconductor device
US9231091B2 (en) * 2014-05-12 2016-01-05 Infineon Technologies Ag Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones
JP5940235B1 (ja) 2014-10-01 2016-06-29 三菱電機株式会社 半導体装置
DE112016006723B4 (de) * 2016-04-11 2024-12-12 Mitsubishi Electric Corporation Halbleitereinrichtung
DE112017004237B4 (de) * 2016-08-25 2023-12-14 Mitsubishi Electric Corporation Halbleitereinheit
WO2019092871A1 (ja) 2017-11-13 2019-05-16 新電元工業株式会社 ワイドギャップ半導体装置
CN111295764B (zh) * 2017-11-13 2024-03-01 新电元工业株式会社 宽带隙半导体装置
JP6554614B1 (ja) 2017-12-14 2019-07-31 新電元工業株式会社 ワイドギャップ半導体装置
JP7113221B2 (ja) 2018-02-08 2022-08-05 パナソニックＩｐマネジメント株式会社 炭化珪素半導体装置
WO2019186853A1 (ja) 2018-03-29 2019-10-03 新電元工業株式会社 ワイドギャップ半導体装置
JP7310144B2 (ja) * 2019-01-10 2023-07-19 富士電機株式会社 炭化珪素半導体装置
JP2020036045A (ja) * 2019-11-29 2020-03-05 ローム株式会社 半導体装置
CN111564497B (zh) * 2020-04-30 2023-04-18 西安理工大学 一种具有非均匀体二极管的SiC MOSFET器件
CN112768447B (zh) * 2021-01-11 2024-11-12 杭州士兰集昕微电子有限公司 逆导型绝缘栅双极型晶体管及其制造方法
IT202100003653A1 (it) 2021-02-17 2022-08-17 St Microelectronics Srl Dispositivo mosfet di carburo di silicio, a conduzione verticale, avente struttura di polarizzazione di porta perfezionata e relativo procedimento di fabbricazione
US20250089316A1 (en) * 2023-09-13 2025-03-13 Wolfspeed, Inc. Power Semiconductor Device with Balancing Shunt Structure

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01276770A (ja) * 1988-04-28 1989-11-07 Fuji Electric Co Ltd 半導体装置
JPH03252166A (ja) * 1990-03-01 1991-11-11 Toshiba Corp Ｍｏｓ型電界効果トランジスタ
JPH04229661A (ja) * 1990-06-08 1992-08-19 Nippondenso Co Ltd 絶縁ゲート型バイポーラトランジスタおよびその製造方法
JPH07249765A (ja) * 1994-03-10 1995-09-26 Nippondenso Co Ltd 絶縁ゲート型電界効果トランジスタ
JPH08102495A (ja) * 1994-09-30 1996-04-16 Toshiba Corp 半導体装置
JP2000294770A (ja) * 1999-04-09 2000-10-20 Rohm Co Ltd 半導体装置
JP2004363477A (ja) * 2003-06-06 2004-12-24 Sanken Electric Co Ltd 絶縁ゲート型半導体装置
JP2005243674A (ja) * 2004-02-24 2005-09-08 Renesas Technology Corp 半導体装置
JP2009302091A (ja) * 2008-06-10 2009-12-24 Denso Corp 炭化珪素半導体装置およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05343692A (ja) * 1992-06-09 1993-12-24 Nec Corp 縦型電界効果トランジスタ
JP4696356B2 (ja) * 2000-12-14 2011-06-08 株式会社デンソー 半導体装置
JP4286877B2 (ja) * 2007-03-13 2009-07-01 Ｏｋｉセミコンダクタ株式会社 炭化珪素半導体装置およびその製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01276770A (ja) * 1988-04-28 1989-11-07 Fuji Electric Co Ltd 半導体装置
JPH03252166A (ja) * 1990-03-01 1991-11-11 Toshiba Corp Ｍｏｓ型電界効果トランジスタ
JPH04229661A (ja) * 1990-06-08 1992-08-19 Nippondenso Co Ltd 絶縁ゲート型バイポーラトランジスタおよびその製造方法
JPH07249765A (ja) * 1994-03-10 1995-09-26 Nippondenso Co Ltd 絶縁ゲート型電界効果トランジスタ
JPH08102495A (ja) * 1994-09-30 1996-04-16 Toshiba Corp 半導体装置
JP2000294770A (ja) * 1999-04-09 2000-10-20 Rohm Co Ltd 半導体装置
JP2004363477A (ja) * 2003-06-06 2004-12-24 Sanken Electric Co Ltd 絶縁ゲート型半導体装置
JP2005243674A (ja) * 2004-02-24 2005-09-08 Renesas Technology Corp 半導体装置
JP2009302091A (ja) * 2008-06-10 2009-12-24 Denso Corp 炭化珪素半導体装置およびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3540781A1 (en) 2018-03-16 2019-09-18 Hitachi Power Semiconductor Device, Ltd. Semiconductor device, power module, and power conversion device
US10529813B2 (en) 2018-03-16 2020-01-07 Hitachi Power Semiconductor Device, Ltd. Semiconductor device, power module, and power conversion device

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JP2015057850A (ja) 2015-03-26
JPWO2012001837A1 (ja) 2013-08-22
JP6008145B2 (ja) 2016-10-19
WO2012001837A1 (ja) 2012-01-05

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