JP5685107B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP5685107B2
JP5685107B2 JP2011036242A JP2011036242A JP5685107B2 JP 5685107 B2 JP5685107 B2 JP 5685107B2 JP 2011036242 A JP2011036242 A JP 2011036242A JP 2011036242 A JP2011036242 A JP 2011036242A JP 5685107 B2 JP5685107 B2 JP 5685107B2
Authority
JP
Japan
Prior art keywords
transistor
pattern
conductive layer
layer
oxide semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011036242A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011199269A (ja
JP2011199269A5 (https=
Inventor
丸山　純矢
純矢 丸山
太一 遠藤
太一 遠藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2011036242A priority Critical patent/JP5685107B2/ja
Publication of JP2011199269A publication Critical patent/JP2011199269A/ja
Publication of JP2011199269A5 publication Critical patent/JP2011199269A5/ja
Application granted granted Critical
Publication of JP5685107B2 publication Critical patent/JP5685107B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2011036242A 2010-02-26 2011-02-22 半導体装置の作製方法 Active JP5685107B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011036242A JP5685107B2 (ja) 2010-02-26 2011-02-22 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010043407 2010-02-26
JP2010043407 2010-02-26
JP2011036242A JP5685107B2 (ja) 2010-02-26 2011-02-22 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014204481A Division JP2015026859A (ja) 2010-02-26 2014-10-03 半導体装置

Publications (3)

Publication Number Publication Date
JP2011199269A JP2011199269A (ja) 2011-10-06
JP2011199269A5 JP2011199269A5 (https=) 2014-02-13
JP5685107B2 true JP5685107B2 (ja) 2015-03-18

Family

ID=44877028

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2011036242A Active JP5685107B2 (ja) 2010-02-26 2011-02-22 半導体装置の作製方法
JP2014204481A Withdrawn JP2015026859A (ja) 2010-02-26 2014-10-03 半導体装置
JP2016129748A Active JP6130562B2 (ja) 2010-02-26 2016-06-30 半導体装置の作製方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2014204481A Withdrawn JP2015026859A (ja) 2010-02-26 2014-10-03 半導体装置
JP2016129748A Active JP6130562B2 (ja) 2010-02-26 2016-06-30 半導体装置の作製方法

Country Status (1)

Country Link
JP (3) JP5685107B2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6226518B2 (ja) * 2011-10-24 2017-11-08 株式会社半導体エネルギー研究所 半導体装置
KR102290801B1 (ko) * 2013-06-21 2021-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP6039150B2 (ja) * 2015-08-18 2016-12-07 株式会社半導体エネルギー研究所 半導体装置の作製方法及び半導体装置
JPWO2024116030A1 (https=) * 2022-11-30 2024-06-06

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61147574A (ja) * 1984-12-21 1986-07-05 Asahi Glass Co Ltd 薄膜トランジスタ
JPS61285723A (ja) * 1985-06-13 1986-12-16 Oki Electric Ind Co Ltd 微細パタ−ン形成方法
JPS6450531A (en) * 1987-08-21 1989-02-27 Nec Corp Formation of fine pattern
JPH03101556U (https=) * 1990-02-05 1991-10-23
KR100216266B1 (ko) * 1996-12-26 1999-08-16 구본준 반도체 장치의 제조방법
JP2003218112A (ja) * 2002-01-21 2003-07-31 Sharp Corp 金属積層膜の形成方法及び半導体装置
KR100603349B1 (ko) * 2004-06-17 2006-07-20 삼성에스디아이 주식회사 박막 트랜지스터, 이를 제조한 방법 및 이를 구비하는평판 디스플레이 장치
KR100785038B1 (ko) * 2006-04-17 2007-12-12 삼성전자주식회사 비정질 ＺｎＯ계 ＴＦＴ
JP2008235334A (ja) * 2007-03-16 2008-10-02 Sony Corp 固体撮像装置の製造方法、固体撮像装置、および、カメラ
WO2008126492A1 (ja) * 2007-04-05 2008-10-23 Idemitsu Kosan Co., Ltd. 電界効果型トランジスタ及び電界効果型トランジスタの製造方法
JP5434000B2 (ja) * 2008-07-17 2014-03-05 株式会社リコー 電界効果型トランジスタ及びその製造方法

Also Published As

Publication number Publication date
JP2011199269A (ja) 2011-10-06
JP2015026859A (ja) 2015-02-05
JP2016171355A (ja) 2016-09-23
JP6130562B2 (ja) 2017-05-17

Similar Documents

Publication Publication Date Title
JP6437147B2 (ja) 半導体装置
JP7531743B1 (ja) 半導体装置
TWI853494B (zh) 半導體裝置
JP6345825B2 (ja) 半導体装置
JP5701031B2 (ja) 半導体装置
JP6076097B2 (ja) 半導体装置
JP6130562B2 (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131218

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20131218

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140926

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140930

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141003

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150113

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150116

R150 Certificate of patent or registration of utility model

Ref document number: 5685107

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250