JP5681338B2 - 窒化物半導体レーザ素子 - Google Patents

窒化物半導体レーザ素子 Download PDF

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Publication number
JP5681338B2
JP5681338B2 JP2007048426A JP2007048426A JP5681338B2 JP 5681338 B2 JP5681338 B2 JP 5681338B2 JP 2007048426 A JP2007048426 A JP 2007048426A JP 2007048426 A JP2007048426 A JP 2007048426A JP 5681338 B2 JP5681338 B2 JP 5681338B2
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Japan
Prior art keywords
film
protective film
nitride semiconductor
region
thickness
Prior art date
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JP2007048426A
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English (en)
Japanese (ja)
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JP2008211112A (ja
JP2008211112A5 (enExample
Inventor
敦生 道上
敦生 道上
知典 森住
知典 森住
祐且 高橋
祐且 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
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Nichia Corp
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Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2007048426A priority Critical patent/JP5681338B2/ja
Priority to US12/033,404 priority patent/US7764722B2/en
Priority to EP08151908A priority patent/EP1962395B1/en
Priority to KR1020080016891A priority patent/KR101407885B1/ko
Priority to EP09158504A priority patent/EP2086076B1/en
Priority to CN2008100808963A priority patent/CN101257186B/zh
Publication of JP2008211112A publication Critical patent/JP2008211112A/ja
Publication of JP2008211112A5 publication Critical patent/JP2008211112A5/ja
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Publication of JP5681338B2 publication Critical patent/JP5681338B2/ja
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  • Semiconductor Lasers (AREA)
JP2007048426A 2007-02-26 2007-02-28 窒化物半導体レーザ素子 Active JP5681338B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2007048426A JP5681338B2 (ja) 2007-02-28 2007-02-28 窒化物半導体レーザ素子
US12/033,404 US7764722B2 (en) 2007-02-26 2008-02-19 Nitride semiconductor laser element
KR1020080016891A KR101407885B1 (ko) 2007-02-26 2008-02-25 질화물 반도체 레이저 소자
EP09158504A EP2086076B1 (en) 2007-02-26 2008-02-25 Nitride semiconductor laser element
EP08151908A EP1962395B1 (en) 2007-02-26 2008-02-25 Nitride semiconductor laser element
CN2008100808963A CN101257186B (zh) 2007-02-26 2008-02-26 氮化物半导体激光器元件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007048426A JP5681338B2 (ja) 2007-02-28 2007-02-28 窒化物半導体レーザ素子

Publications (3)

Publication Number Publication Date
JP2008211112A JP2008211112A (ja) 2008-09-11
JP2008211112A5 JP2008211112A5 (enExample) 2010-03-25
JP5681338B2 true JP5681338B2 (ja) 2015-03-04

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ID=39787135

Family Applications (1)

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JP2007048426A Active JP5681338B2 (ja) 2007-02-26 2007-02-28 窒化物半導体レーザ素子

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JP (1) JP5681338B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5572919B2 (ja) * 2007-06-07 2014-08-20 日亜化学工業株式会社 窒化物半導体レーザ素子

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3381073B2 (ja) * 1992-09-28 2003-02-24 ソニー株式会社 半導体レーザ装置とその製造方法
JP3211775B2 (ja) * 1997-09-26 2001-09-25 日本電気株式会社 分布帰還型半導体レーザの製造方法
JP2004072004A (ja) * 2002-08-09 2004-03-04 Keiji Tanaka マイクロレンズ付発光素子およびその形成方法
JP4529372B2 (ja) * 2003-04-23 2010-08-25 日亜化学工業株式会社 半導体レーザ素子
JP4451371B2 (ja) * 2004-12-20 2010-04-14 シャープ株式会社 窒化物半導体レーザ素子
JP4734923B2 (ja) * 2005-01-06 2011-07-27 ソニー株式会社 半導体レーザの製造方法
JP5285835B2 (ja) * 2005-07-13 2013-09-11 株式会社東芝 半導体素子およびその製造方法

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JP2008211112A (ja) 2008-09-11

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