JP5676413B2 - 電力用半導体装置 - Google Patents

電力用半導体装置 Download PDF

Info

Publication number
JP5676413B2
JP5676413B2 JP2011236784A JP2011236784A JP5676413B2 JP 5676413 B2 JP5676413 B2 JP 5676413B2 JP 2011236784 A JP2011236784 A JP 2011236784A JP 2011236784 A JP2011236784 A JP 2011236784A JP 5676413 B2 JP5676413 B2 JP 5676413B2
Authority
JP
Japan
Prior art keywords
power semiconductor
die pad
lead
lead frame
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011236784A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013098199A5 (https=
JP2013098199A (ja
Inventor
藤野 純司
純司 藤野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2011236784A priority Critical patent/JP5676413B2/ja
Publication of JP2013098199A publication Critical patent/JP2013098199A/ja
Publication of JP2013098199A5 publication Critical patent/JP2013098199A5/ja
Application granted granted Critical
Publication of JP5676413B2 publication Critical patent/JP5676413B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07541Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07552Controlling the environment, e.g. atmosphere composition or temperature changes in structures or sizes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/521Structures or relative sizes of bond wires
    • H10W72/527Multiple bond wires having different sizes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5366Shapes of wire connectors the bond wires having kinks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5445Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5449Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/547Dispositions of multiple bond wires
    • H10W72/5475Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/926Multiple bond pads having different sizes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/932Plan-view shape, i.e. in top view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2011236784A 2011-10-28 2011-10-28 電力用半導体装置 Active JP5676413B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011236784A JP5676413B2 (ja) 2011-10-28 2011-10-28 電力用半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011236784A JP5676413B2 (ja) 2011-10-28 2011-10-28 電力用半導体装置

Publications (3)

Publication Number Publication Date
JP2013098199A JP2013098199A (ja) 2013-05-20
JP2013098199A5 JP2013098199A5 (https=) 2014-01-09
JP5676413B2 true JP5676413B2 (ja) 2015-02-25

Family

ID=48619888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011236784A Active JP5676413B2 (ja) 2011-10-28 2011-10-28 電力用半導体装置

Country Status (1)

Country Link
JP (1) JP5676413B2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9376514B2 (en) 2012-09-20 2016-06-28 Lg Chem, Ltd. Vinyl chloride latex with low energy consumption and method for preparing the same

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015178296A1 (ja) 2014-05-20 2015-11-26 三菱電機株式会社 電力用半導体装置
CN108922883A (zh) * 2018-08-23 2018-11-30 济南晶恒电子有限责任公司 片式同步整流器件
CN110736574B (zh) * 2019-12-01 2024-07-23 扬州扬杰电子科技股份有限公司 一种氮化镓mosfet封装应力应变分布感测结构
JP6851559B1 (ja) * 2020-03-13 2021-03-31 三菱電機株式会社 半導体装置および電力変換装置
JP7535909B2 (ja) * 2020-10-20 2024-08-19 三菱電機株式会社 電力用半導体装置およびその製造方法ならびに電力変換装置
JP7660487B2 (ja) * 2021-11-22 2025-04-11 三菱電機株式会社 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55149957U (https=) * 1979-04-13 1980-10-29
JPS57170560U (https=) * 1981-04-21 1982-10-27
JPS62219649A (ja) * 1986-03-20 1987-09-26 Hitachi Ltd 電子装置
JPH06140558A (ja) * 1992-10-29 1994-05-20 Sanyo Electric Co Ltd 半導体装置
JP3067560B2 (ja) * 1994-12-02 2000-07-17 松下電器産業株式会社 電子部品製造方法
JP2004022601A (ja) * 2002-06-12 2004-01-22 Mitsubishi Electric Corp 半導体装置
JP2006080300A (ja) * 2004-09-09 2006-03-23 Kokusan Denki Co Ltd リードフレーム及びその製造方法
JP2011066289A (ja) * 2009-09-18 2011-03-31 Renesas Electronics Corp 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9376514B2 (en) 2012-09-20 2016-06-28 Lg Chem, Ltd. Vinyl chloride latex with low energy consumption and method for preparing the same

Also Published As

Publication number Publication date
JP2013098199A (ja) 2013-05-20

Similar Documents

Publication Publication Date Title
JP5279632B2 (ja) 半導体モジュール
JP6234630B2 (ja) パワーモジュール
JP5676413B2 (ja) 電力用半導体装置
CN101378040B (zh) 半导体装置
TWI450373B (zh) 雙側冷卻整合功率裝置封裝及模組,以及製造方法
US9673118B2 (en) Power module and method of manufacturing power module
US8188583B2 (en) Semiconductor device and method of manufacturing same
JP5863602B2 (ja) 電力用半導体装置
JP6114149B2 (ja) 半導体装置
JP7845824B2 (ja) 半導体装置
CN105529319A (zh) 半导体装置
JP2002270736A (ja) 半導体装置
CN111354710B (zh) 半导体装置及其制造方法
CN115206919A (zh) 半导体装置
JP2022143168A (ja) 半導体装置
JP2010287726A (ja) 半導体装置
US11398447B2 (en) Semiconductor device and method for producing semiconductor device
JP2019029410A (ja) 半導体モジュール
JP2015167171A (ja) 半導体装置
JP2022143167A (ja) 半導体装置
CN115206905B (zh) 半导体装置和使用该半导体装置的半导体模块
JP7582301B2 (ja) 半導体装置
JP5741526B2 (ja) 半導体装置及びその製造方法
JP2021027146A (ja) 半導体装置
JP2019079891A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131114

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20131114

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140530

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140916

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141031

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20141202

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141225

R151 Written notification of patent or utility model registration

Ref document number: 5676413

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250