JP5676413B2 - 電力用半導体装置 - Google Patents
電力用半導体装置 Download PDFInfo
- Publication number
- JP5676413B2 JP5676413B2 JP2011236784A JP2011236784A JP5676413B2 JP 5676413 B2 JP5676413 B2 JP 5676413B2 JP 2011236784 A JP2011236784 A JP 2011236784A JP 2011236784 A JP2011236784 A JP 2011236784A JP 5676413 B2 JP5676413 B2 JP 5676413B2
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- Prior art keywords
- power semiconductor
- die pad
- lead
- lead frame
- semiconductor device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
- H01L2224/48096—Kinked the kinked part being in proximity to the bonding area on the semiconductor or solid-state body
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
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- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
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- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
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- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011236784A JP5676413B2 (ja) | 2011-10-28 | 2011-10-28 | 電力用半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011236784A JP5676413B2 (ja) | 2011-10-28 | 2011-10-28 | 電力用半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013098199A JP2013098199A (ja) | 2013-05-20 |
| JP2013098199A5 JP2013098199A5 (enExample) | 2014-01-09 |
| JP5676413B2 true JP5676413B2 (ja) | 2015-02-25 |
Family
ID=48619888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011236784A Active JP5676413B2 (ja) | 2011-10-28 | 2011-10-28 | 電力用半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5676413B2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9376514B2 (en) | 2012-09-20 | 2016-06-28 | Lg Chem, Ltd. | Vinyl chloride latex with low energy consumption and method for preparing the same |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015178296A1 (ja) | 2014-05-20 | 2015-11-26 | 三菱電機株式会社 | 電力用半導体装置 |
| CN108922883A (zh) * | 2018-08-23 | 2018-11-30 | 济南晶恒电子有限责任公司 | 片式同步整流器件 |
| CN110736574B (zh) * | 2019-12-01 | 2024-07-23 | 扬州扬杰电子科技股份有限公司 | 一种氮化镓mosfet封装应力应变分布感测结构 |
| WO2021181678A1 (ja) * | 2020-03-13 | 2021-09-16 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
| JP7535909B2 (ja) * | 2020-10-20 | 2024-08-19 | 三菱電機株式会社 | 電力用半導体装置およびその製造方法ならびに電力変換装置 |
| JP7660487B2 (ja) * | 2021-11-22 | 2025-04-11 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55149957U (enExample) * | 1979-04-13 | 1980-10-29 | ||
| JPS57170560U (enExample) * | 1981-04-21 | 1982-10-27 | ||
| JPS62219649A (ja) * | 1986-03-20 | 1987-09-26 | Hitachi Ltd | 電子装置 |
| JPH06140558A (ja) * | 1992-10-29 | 1994-05-20 | Sanyo Electric Co Ltd | 半導体装置 |
| JP3067560B2 (ja) * | 1994-12-02 | 2000-07-17 | 松下電器産業株式会社 | 電子部品製造方法 |
| JP2004022601A (ja) * | 2002-06-12 | 2004-01-22 | Mitsubishi Electric Corp | 半導体装置 |
| JP2006080300A (ja) * | 2004-09-09 | 2006-03-23 | Kokusan Denki Co Ltd | リードフレーム及びその製造方法 |
| JP2011066289A (ja) * | 2009-09-18 | 2011-03-31 | Renesas Electronics Corp | 半導体装置の製造方法 |
-
2011
- 2011-10-28 JP JP2011236784A patent/JP5676413B2/ja active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9376514B2 (en) | 2012-09-20 | 2016-06-28 | Lg Chem, Ltd. | Vinyl chloride latex with low energy consumption and method for preparing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013098199A (ja) | 2013-05-20 |
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