JP5675275B2 - ジルコニア強化アルミナのesd保護用セラミック組成物、部材及びそれを形成するための方法 - Google Patents
ジルコニア強化アルミナのesd保護用セラミック組成物、部材及びそれを形成するための方法 Download PDFInfo
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- JP5675275B2 JP5675275B2 JP2010244531A JP2010244531A JP5675275B2 JP 5675275 B2 JP5675275 B2 JP 5675275B2 JP 2010244531 A JP2010244531 A JP 2010244531A JP 2010244531 A JP2010244531 A JP 2010244531A JP 5675275 B2 JP5675275 B2 JP 5675275B2
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- Compositions Of Oxide Ceramics (AREA)
Description
コロラド州、コロラドスプリングスのサンゴバン・セラミックス・アンド・プラスチックスより入手可能なAZ67粉末、Y−TZP20vol%とAl2O380vol%を有するZTA(ジルコニア強化アルミナ)を、ボールミルにおいてサブミクロンのFe2O3と混合する。Y−TZPの粉砕用媒体、脱イオン水及び分散剤をこのミルに充填する。粉砕は、均質な混合確実にするために10時間行った。粉砕により混合されたスラリーをRoto−Vap又は噴霧乾燥器を用いて乾燥した。マグネチックスターラーは、わずかに磁気性の粒子、例えば、Fe2O3の如何なる分離も排除するため避けなければならないことがわかった。乾燥したグラニュールを鋼の鋳型によってディスク又はスクエアタイルにプレスし、続いて207MPa(30,000psi)でCIP処理(冷間静水圧成形)を行った。これら約55%の相対密度のプレスされた部品(「又は未処理の成形体」)を、二ケイ化モリブデン(MoSi2)発熱体を有する炉を用いて空気中1,200〜1,400℃で1時間焼結し、表1にまとめるようにT.D.(理論密度)の95%を超える焼結密度を達成した。各組成物のT.D.は、相間の反応を無視できると仮定して混合の法則により評価した。焼結部品の密度は水置換法によって測定した。幾つかの焼結部品は、207MPaのアルゴン圧力下において1,200〜1,350℃で45分間HIP処理(熱間静水圧加圧)によってさらに高密度化し、実質的に気孔のない部品を得た。焼結又はHIP処理された部品の表面抵抗は、ESD S11.11によって同軸プローブを用いて測定した。幾つかのHIP処理部品を空気中700〜950℃で1〜5時間、所望のESD表面抵抗、105〜1011Ωに熱処理した。
コロラド州、コロラドスプリングスのサンゴバン・セラミックス・アンド・プラスチックスより入手可能なAZ93粉末、Y−TZP40vol%とAl2O360vol%を有するZTA(ジルコニア強化アルミナ)を、ボールミルにおいてサブミクロンのFe2O3と混合する。後の処理方法は例1と同じである。その結果は、ESD保護用ZTA系セラミックがAZ93粉末でも調製できることを示している。
ZTA(コロラド州、コロラドスプリングスのサンゴバン・セラミックス・アンド・プラスチックスより入手可能なAZ93、Y−TZP40vol%、Al2O360vol%)を、ジルコニア(Y−TZP)粉砕用媒体を用いて粉砕することにより、製粉されたFe2O3粉末(比表面積13m2/gに製粉、マサチューセッツ州、ワード・ヒルのアルファ・エイサー)と水中において混合し、続いてスプレー乾燥した。スプレー乾燥した粉末を、鋼の鋳型を用いて長方形のタイルにプレスし、続いて207MPaでCIP処理して約55%T.D.の圧粉密度にした。
例3の同じ材料をホットワックスの押出によって2mm直径の細いロッドに成形した。第一に、AZ93とFe2O3粉末の混合物を高温でワックスとさらに混合した。押し出されたロッドを空気中1275℃で約97%T.D.に焼結した。焼結したロッドを酸素生成粉体床によって1250℃、207MPaのアルゴンでさらにHIP処理した。HIP処理したロッドは、赤色で、磁性がなく、99.8%T.D.を超える高密度であった。HIP処理したロッドの抵抗率は、5×107Ω−cmに焼結されたロッドとほぼ同じままであった。
例4のHIP処理したロッドをワイヤーボンディングチップに機械加工した。この材料は、Y−TZP系ESD保護用セラミックと比べて、非常により高いヤング率270GPaと、押込荷重1kgfでビッカース硬さ15.3GPaとを有する。この材料は、効果的な超音波ボンディングと改善された耐摩耗性に関して有利である。
酸素生成粉末は、HIP処理の際に還元される。とりわけ、使用したPr6O11は、酸素減損の後より明るい色を示した。使用粉末は、空気中800〜1,000℃で5時間熱処理してPr6O11に再酸化することができる。それゆえ、酸素生成粉末は、追加のESD保護用部材の処理に繰り返し使用するため容易に再生することができる。
炭化ケイ素(SiC)の坩堝は、しばしば産業用途に関してより耐久性があり、優れた熱間強度と熱伝導性を有する。マサチューセッツ州、ウースターのサンゴバン・インダストリアル・セラミックスより入手可能なSiC坩堝を、例1と同じ方法によってHIP処理に使用した。HIP処理の後、HIP処理した試料は暗く、かなり磁性を帯びており、より低い抵抗率を示すことが見出された。坩堝を空気中1,000℃で5時間加熱することにより不動態化し酸化物層を形成した。不動態化した坩堝を用いて同じサイクルを繰り返した。そうして、不動態化した坩堝からHIP処理した試料が、アルミナ坩堝を用いて処理した試料と本質的に同じ特性を有することを見出した。HIP処理の際、未加工のSiC坩堝において酸素が消費されて還元性環境を作り出すのであろうと思われる。
ZTA(コロラド州、コロラドスプリングスのサンゴバン・セラミックス・アンド・プラスチックスより入手可能なAZ93)を、ジルコニア(Y−TZP)粉砕用媒体を用いて粉砕することにより、製粉されたFe2O3粉末(比表面積13m2/gに製粉、アルファ・エイサー)と水中において混合し、続いてスプレー乾燥した。スプレー乾燥した粉末を、鋼の鋳型を用いて長方形のタイルにプレスし、続いて207MPaでCIP処理して約55%T.D.の圧粉密度にした。
ZTA(コロラド州、コロラドスプリングスのサンゴバン・セラミックス・アンド・プラスチックスより入手可能なAZ93、Y−TZP40vol%、Al2O360vol%)を、ジルコニア(Y−TZP)粉砕用媒体を用いて粉砕することにより、製粉されたFe2O3粉末(比表面積13m2/gに製粉、マサチューセッツ州、ワード・ヒルのアルファ・エイサー)と水中において混合し、続いてスプレー乾燥した。次いで、スプレー乾燥した粉末を、ホットワックスの押出法において使用し、2mm直径の細いロッドを生成した。
材料の抵抗率は、高温の熱処理から多くの電荷担体を凝固する方法によって調整することができる。これは浸漬時間と冷却速度によって調節される。例えば、空気中で焼結されるZTA/Fe2O3組成物の表面抵抗は、0.5℃/分〜10℃/分の冷却速度で焼結温度1250℃から室温まで変化させることによって1×109〜5×107Ω−cmに変化させることができる。
ZTA(コロラド州、コロラドスプリングスのサンゴバン・セラミックス・アンド・プラスチックスより入手可能なAZ93、Y−TZP40vol%、Al2O360vol%)を、ジルコニア(Y−TZP)粉砕用媒体を用いて粉砕することにより、製粉されたFe2O3粉末(比表面積13m2/gに製粉、マサチューセッツ州、ワード・ヒルのアルファ・エイサー)と水中において混合し、続いてスプレー乾燥した。次いで、スプレー乾燥した粉末を、ホットワックスの押出法において使用し、2mm直径の細いロッドを生成した。
ZTA(コロラド州、コロラドスプリングスのサンゴバン・セラミックス・アンド・プラスチックスより入手可能なAZ93、Y−TZP40vol%、Al2O360vol%)を、ジルコニア(Y−TZP)粉砕用媒体を用いて粉砕することにより、製粉されたFe2O3粉末(比表面積13m2/gに製粉、マサチューセッツ州、ワード・ヒルのアルファ・エイサー)と水中において混合し、続いてスプレー乾燥した。スプレー乾燥した粉末を、鋼の鋳型を用いて丸いペレットにプレスし、続いて207MPaでCIP処理して約55%T.D.の圧粉密度にした。
ZTA(コロラド州、コロラドスプリングスのサンゴバン・セラミックス・アンド・プラスチックスより入手可能なAZ93、Y−TZP40vol%、Al2O360vol%)を、ジルコニア(Y−TZP)粉砕用媒体を用いて粉砕することにより、製粉されたFe2O3粉末(比表面積13m2/gに製粉、マサチューセッツ州、ワード・ヒルのアルファ・エイサー)と水中において混合し、続いてスプレー乾燥した。スプレー乾燥した粉末を、鋼の鋳型を用いて丸いペレットにプレスし、続いて207MPaでCIP処理して約55%T.D.の圧粉密度にした。
ZTA(コロラド州、コロラドスプリングスのサンゴバン・セラミックス・アンド・プラスチックスより入手可能なAZ93、Y−TZP40vol%、Al2O360vol%)を、ジルコニア(Y−TZP)粉砕用媒体を用いて粉砕することにより、製粉されたFe2O3粉末(比表面積13m2/gに製粉、マサチューセッツ州、ワード・ヒルのアルファ・エイサー)と水中において混合し、続いてスプレー乾燥した。次いで、スプレー乾燥した粉末を、ホットワックスの押出法において使用し、2mm直径の細いロッドを生成した。
Claims (51)
- 焼結組成物から形成されたESD保護用セラミック部材であって、
該焼結組成物が、Al2O3の一次成分と、正方晶ZrO2を含むZrO2を含む二次成分とを有するジルコニア強化アルミナの基材と;該基材の電気抵抗率を低減するための、遷移金属酸化物からなる抵抗率調節剤とを含み、該部材が105〜1011Ω−cmの範囲の体積抵抗率を有し、前記抵抗率調節剤が、前記基材に関して5〜40vol%の範囲の量で存在し、前記基材が、体積百分率に基づき55:45以上の比でAl 2 O 3 とZrO 2 を含む、ESD保護用セラミック部材。 - 前記遷移金属酸化物が、TiO2、MnO2、Fe2O3、CoO、NiO、Cr2O3、SnO2、LaMnO3、BaO6Fe2O3、LaCrO3、及びSrCrO3から成る群より選択された、請求項1に記載のESD保護用セラミック部材。
- 前記遷移金属酸化物が、Fe2O3、TiO2、及びMnO2から成る群より選択された、請求項1に記載のESD保護用セラミック部材。
- 前記遷移金属酸化物がFe2O3である、請求項3に記載のESD保護用セラミック部材。
- 前記比が60:40以上である、請求項1に記載のESD保護用セラミック部材。
- 前記一次成分が前記基材の一次相を形成し、前記二次成分が該一次成分中に分散された二次相を形成する、請求項1に記載のESD保護用セラミック部材。
- 前記二次成分が主として正方晶ZrO2を含む、請求項6に記載のESD保護用セラミック部材。
- 前記二次成分が、少なくとも75vol%の正方晶ZrO2を含む、請求項6に記載のESD保護用セラミック部材。
- 前記二次成分が、少なくとも85vol%の正方晶ZrO2を含む、請求項8に記載のESD保護用セラミック部材。
- 前記二次成分が、立方晶ZrO2と単斜晶ZrO2のうち少なくとも一方をさらに含む、請求項8に記載のESD保護用セラミック部材。
- 前記ZrO2が安定剤を含む、請求項1に記載のESD保護用セラミック部材。
- 前記安定剤が、イットリア、セリア、スカンジアから成る群より選択された少なくとも1つの材料を含む、請求項11に記載のESD保護用セラミック部材。
- 前記ZrO2が焼結前に前記安定剤と予備合金化された、請求項11に記載のESD保護用セラミック部材。
- 230GPaを超えるヤング率を有する、請求項1に記載のESD保護用セラミック部材。
- 13GPaを超えるビッカース硬さを有する、請求項1に記載のESD保護用セラミック部材。
- 10.0×10-6K-1未満の熱膨張係数を有する、請求項1に記載のESD保護用セラミック部材。
- 理論密度の少なくとも98%の密度を有する、請求項1に記載のESD保護用セラミック部材。
- 理論密度の少なくとも99%の密度を有する、請求項17に記載のESD保護用セラミック部材。
- 理論密度の少なくとも99.5%の密度を有する、請求項18に記載のESD保護用セラミック部材。
- 1.0μm未満の平均粒径を有する、請求項1に記載のESD保護用セラミック部材。
- ワイヤーボンディングチップ、ワイヤーボンディングキャピラリー、磁気抵抗効果ハンドリングツール、スライシングツール、ダイシングツール、脱着キャリヤーツール、ピックアンドプレースツール、半導体デバイスのパッケージングツール、単段及び二段プローブ、並びにテストソケットから成る群より選択された、請求項1に記載のESD保護用セラミック部材。
- 106〜109Ω−cmの範囲の体積抵抗率を有する、請求項1に記載のESD保護用セラミック部材。
- 35を超えるL*を有する、請求項1に記載のESD保護用セラミック部材。
- 5×104A/m以下の磁界Hcを有する、請求項1に記載のESD保護用セラミック部材。
- 10ガウス以下の残留磁気誘導Mrを有する、請求項1に記載のESD保護用セラミック部材。
- 焼結組成物から形成されたESD保護用セラミックボンディングツールであって、
該焼結組成物が、Al2O3の一次成分と、正方晶ZrO2を含むZrO2を含む二次成分とを有するジルコニア強化アルミナの基材と;該基材の電気抵抗率を低減するための、遷移金属酸化物からなる抵抗率調節剤とを含み、
該ツールが、理論密度の98%以上の密度と、106〜109Ω−cmの範囲の体積抵抗率とを有し、前記抵抗率調節剤が、前記基材に関して5〜40vol%の範囲の量で存在し、前記基材が、体積百分率に基づき55:45以上の比でAl 2 O 3 とZrO 2 を含む、ESD保護用セラミックボンディングツール。 - ワークピースをつかむために模様を施した先端部分を有する、請求項26に記載のツール。
- 前記先端部分を振動させるための超音波発生器をさらに含む、請求項27に記載のツール。
- ESD保護用セラミック部材を形成するための方法であって、
(i)Al2O3の一次成分と、正方晶ZrO2を含むZrO2の二次成分とを有するジルコニア強化アルミナの基材と;(ii)該基材の電気抵抗率を105〜1011Ω−cmの範囲の体積抵抗率まで低減するための、遷移金属酸化物からなる抵抗率調節剤とを含むセラミック本体を熱処理によって高密度化することを含み、該熱処理が1400℃未満の温度で実施され、前記抵抗率調節剤が、前記基材に関して5〜40vol%の範囲の量で存在し、前記基材が、体積百分率に基づき55:45以上の比でAl 2 O 3 とZrO 2 を含む、ESD保護用セラミック部材を形成するための方法。 - 前記熱処理が、無加圧焼結、圧力焼結、又はそれらの組み合わせから選択された方法によって実施される、請求項29に記載の方法。
- 前記熱処理が、熱間静水圧加圧(HIP処理)によって実施される圧力焼結を含む、請求項30に記載の方法。
- 前記温度が1350℃以下である、請求項29に記載の方法。
- ESD保護用セラミック部材を形成するための方法であって、
Al2O3の一次成分と、主として正方晶ZrO2から構成されるZrO2の二次成分とを含むジルコニア強化アルミナの基材と、該基材の電気抵抗率を105〜1011Ω−cmの範囲の体積抵抗率まで低減するための、遷移金属酸化物からなる抵抗率調節剤とを含むセラミック本体を熱間静水圧加圧(HIP処理)環境内の局所的な環境においてHIP処理することを含み、該局所的な環境が該HIP処理環境の処理ガス種よりも高い分圧を有する処理ガス種を含有し、前記部材が処理ガス源を含有する坩堝に提供され、該坩堝が前記局所的な環境である体積を画定し、前記抵抗率調節剤が、前記基材に関して5〜40vol%の範囲の量で存在し、前記基材が、体積百分率に基づき55:45以上の比でAl 2 O 3 とZrO 2 を含む、ESD保護用セラミック部材を形成するための方法。 - 前記HIP処理環境が希ガスを含有し、前記局所的な環境が酸素を含み、該局所的な環境が該HIP処理環境と比べて酸素リッチである、請求項33に記載の方法。
- 前記坩堝がそれを通るガス流を弱めるよう構成される、請求項33に記載の方法。
- 前記坩堝がHIP処理の際に1つの開口を有する、請求項35に記載の方法。
- 前記処理ガス源が粉末を含む、請求項33に記載の方法。
- 前記部材が前記粉末中に埋め込まれている、請求項37に記載の方法。
- 前記部材が、HIP処理の際に処理ガス源を含有する坩堝に提供される、請求項33に記載の方法。
- 前記処理ガス源が、前記抵抗率調節剤よりも容易に還元される材料を含む、請求項39に記載の方法。
- 前記処理ガス種が、前記局所的な環境において0.1気圧以上の分圧を有する、請求項33に記載の方法。
- 前記処理ガス種が、前記局所的な環境において0.5気圧以上の分圧を有する、請求項33に記載の方法。
- 前記処理ガス種が酸素であり、前記局所的な環境がHIP処理環境の平衡酸素分圧よりも高い酸素分圧を有する、請求項33に記載の方法。
- 前記セラミック部材がロッドである、請求項33に記載の方法。
- 前記ロッドが5:1よりも高いアスペクト比を有する、請求項33に記載の方法。
- マイクロエレクトロニクスデバイスをボンディングする方法であって、
(i)Al2O3の一次成分と、正方晶ZrO2を含むZrO2の二次成分とを有するジルコニア強化アルミナの基材と;(ii)該基材の電気抵抗率を低減するための、遷移金属酸化物からなる抵抗率調節剤とを有する焼結組成物から形成され、105〜1011Ω−cmの範囲の体積抵抗率を有するボンディングツールを該デバイスと接触させる工程;並びに
該ツールにバイアスをかけて該マイクロエレクトロニクスデバイスのボンディングを達成するバイアス工程
を含み、前記抵抗率調節剤が、前記基材に関して5〜40vol%の範囲の量で存在し、前記基材が、体積百分率に基づき55:45以上の比でAl 2 O 3 とZrO 2 を含む、マイクロエレクトロニクスデバイスをボンディングする方法。 - 前記バイアス工程が、超音波を用いて振動させることにより実施される、請求項46に記載の方法。
- 前記マイクロエレクトロニクスデバイスが、接点にボンディングされるためのワイヤーを含み、ボンディングを実施して該接点に該ワイヤーをボンディングする、請求項46に記載の方法。
- 前記ボンディングツールが、前記デバイス上の1000Vを500ms未満で100Vに散逸するようなESD特性を有する、請求項46に記載の方法。
- 前記処理ガス種が、酸化物を含む処理ガス源の分解によって提供される、請求項33に記載の方法。
- 前記処理ガス源が、前記遷移金属酸化物よりも容易に還元される材料を含む、請求項50に記載の方法。
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WO2004049402A2 (en) | 2004-06-10 |
WO2004049402A3 (en) | 2004-12-02 |
CN101061079A (zh) | 2007-10-24 |
JP2011068561A (ja) | 2011-04-07 |
AU2003295874A8 (en) | 2004-06-18 |
KR100727280B1 (ko) | 2007-06-13 |
US20080011811A1 (en) | 2008-01-17 |
JP2006508011A (ja) | 2006-03-09 |
US8516857B2 (en) | 2013-08-27 |
US7247588B2 (en) | 2007-07-24 |
AU2003295874A1 (en) | 2004-06-18 |
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US20060175584A1 (en) | 2006-08-10 |
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