JP5669839B2 - 磁気積層体設計 - Google Patents

磁気積層体設計 Download PDF

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Publication number
JP5669839B2
JP5669839B2 JP2012520671A JP2012520671A JP5669839B2 JP 5669839 B2 JP5669839 B2 JP 5669839B2 JP 2012520671 A JP2012520671 A JP 2012520671A JP 2012520671 A JP2012520671 A JP 2012520671A JP 5669839 B2 JP5669839 B2 JP 5669839B2
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JP
Japan
Prior art keywords
layer
magnetic
free layer
free
ferromagnetic
Prior art date
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Expired - Fee Related
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JP2012520671A
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English (en)
Japanese (ja)
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JP2012533188A5 (enExample
JP2012533188A (ja
Inventor
シー，ハイウェン
クエール，アントワーヌ
リー，ブライアン
ライアン，パトリック
ジン，インシク
アンダーソン，ポール
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Seagate Technology LLC
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Seagate Technology LLC
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Publication of JP2012533188A5 publication Critical patent/JP2012533188A5/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1114—Magnetoresistive having tunnel junction effect
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1143—Magnetoresistive with defined structural feature

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Magnetic Heads (AREA)
JP2012520671A 2009-07-13 2010-07-08 磁気積層体設計 Expired - Fee Related JP5669839B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/501,632 US7939188B2 (en) 2008-10-27 2009-07-13 Magnetic stack design
US12/501,632 2009-07-13
PCT/US2010/041296 WO2011008614A1 (en) 2009-07-13 2010-07-08 Magnetic stack design

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2013141582A Division JP5752183B2 (ja) 2009-07-13 2013-07-05 磁気積層体設計
JP2013141583A Division JP2013243378A (ja) 2009-07-13 2013-07-05 磁気積層体設計

Publications (3)

Publication Number Publication Date
JP2012533188A JP2012533188A (ja) 2012-12-20
JP2012533188A5 JP2012533188A5 (enExample) 2013-08-22
JP5669839B2 true JP5669839B2 (ja) 2015-02-18

Family

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Family Applications (5)

Application Number Title Priority Date Filing Date
JP2012520671A Expired - Fee Related JP5669839B2 (ja) 2009-07-13 2010-07-08 磁気積層体設計
JP2013141583A Pending JP2013243378A (ja) 2009-07-13 2013-07-05 磁気積層体設計
JP2013141582A Expired - Fee Related JP5752183B2 (ja) 2009-07-13 2013-07-05 磁気積層体設計
JP2015075907A Expired - Fee Related JP6113216B2 (ja) 2009-07-13 2015-04-02 磁気積層体設計
JP2015134288A Active JP6193312B2 (ja) 2009-07-13 2015-07-03 磁気積層体設計

Family Applications After (4)

Application Number Title Priority Date Filing Date
JP2013141583A Pending JP2013243378A (ja) 2009-07-13 2013-07-05 磁気積層体設計
JP2013141582A Expired - Fee Related JP5752183B2 (ja) 2009-07-13 2013-07-05 磁気積層体設計
JP2015075907A Expired - Fee Related JP6113216B2 (ja) 2009-07-13 2015-04-02 磁気積層体設計
JP2015134288A Active JP6193312B2 (ja) 2009-07-13 2015-07-03 磁気積層体設計

Country Status (5)

Country Link
US (2) US7939188B2 (enExample)
JP (5) JP5669839B2 (enExample)
KR (1) KR101459511B1 (enExample)
CN (1) CN102687215B (enExample)
WO (1) WO2011008614A1 (enExample)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0652395B2 (ja) 1986-08-25 1994-07-06 富士写真フイルム株式会社 写真フイルム用スプ−ル
US7935435B2 (en) * 2008-08-08 2011-05-03 Seagate Technology Llc Magnetic memory cell construction
US8169810B2 (en) * 2008-10-08 2012-05-01 Seagate Technology Llc Magnetic memory with asymmetric energy barrier
US7939188B2 (en) * 2008-10-27 2011-05-10 Seagate Technology Llc Magnetic stack design
US7998758B2 (en) * 2008-11-05 2011-08-16 Seagate Technology Llc Method of fabricating a magnetic stack design with decreased substrate stress
US8043732B2 (en) * 2008-11-11 2011-10-25 Seagate Technology Llc Memory cell with radial barrier
US8455117B2 (en) * 2009-03-04 2013-06-04 Seagate Technology Llc Bit-patterned stack with antiferromagnetic shell
JP5794892B2 (ja) * 2010-11-26 2015-10-14 ルネサスエレクトロニクス株式会社 磁気メモリ
US8541247B2 (en) * 2010-12-20 2013-09-24 Seagate Technology Llc Non-volatile memory cell with lateral pinning
JP5492144B2 (ja) * 2011-05-27 2014-05-14 株式会社日立製作所 垂直磁化磁気抵抗効果素子及び磁気メモリ
US9082695B2 (en) * 2011-06-06 2015-07-14 Avalanche Technology, Inc. Vialess memory structure and method of manufacturing same
US8313959B1 (en) 2011-08-17 2012-11-20 Taiwan Semiconductor Manufacturing Company, Ltd. Hole first hardmask definition
US8981503B2 (en) 2012-03-16 2015-03-17 Headway Technologies, Inc. STT-MRAM reference layer having substantially reduced stray field and consisting of a single magnetic domain
US9007818B2 (en) 2012-03-22 2015-04-14 Micron Technology, Inc. Memory cells, semiconductor device structures, systems including such cells, and methods of fabrication
US9368176B2 (en) * 2012-04-20 2016-06-14 Alexander Mikhailovich Shukh Scalable magnetoresistive element
US9054030B2 (en) 2012-06-19 2015-06-09 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US8923038B2 (en) 2012-06-19 2014-12-30 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US9373775B2 (en) 2012-09-13 2016-06-21 Micron Technology, Inc. Methods of forming magnetic memory cells
US9379315B2 (en) 2013-03-12 2016-06-28 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, and memory systems
US8970991B2 (en) * 2013-03-12 2015-03-03 Seagate Technology Llc Coupling feature in a magnetoresistive trilayer lamination
US9368714B2 (en) 2013-07-01 2016-06-14 Micron Technology, Inc. Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems
US9466787B2 (en) 2013-07-23 2016-10-11 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, memory systems, and electronic systems
US8872149B1 (en) * 2013-07-30 2014-10-28 Taiwan Semiconductor Manufacturing Company, Ltd. RRAM structure and process using composite spacer
US9203017B2 (en) 2013-08-02 2015-12-01 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions including a package structure usable in spin transfer torque memories
US9196825B2 (en) 2013-09-03 2015-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Reversed stack MTJ
US9257636B2 (en) 2013-09-11 2016-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Perpendicular magnetic random-access memory (MRAM) formation by direct self-assembly method
US9461242B2 (en) 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US9177576B2 (en) 2013-10-03 2015-11-03 HGST Netherlands B.V. Giant magneto resistive sensor and method for making same
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
KR102312731B1 (ko) * 2014-03-28 2021-10-15 인텔 코포레이션 점 콘택 자유 자성층을 갖는 스핀 전달 토크 메모리를 형성하기 위한 기술
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9269888B2 (en) 2014-04-18 2016-02-23 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US10003014B2 (en) * 2014-06-20 2018-06-19 International Business Machines Corporation Method of forming an on-pitch self-aligned hard mask for contact to a tunnel junction using ion beam etching
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US9768377B2 (en) 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
US9559294B2 (en) 2015-01-29 2017-01-31 Taiwan Semiconductor Manufacturing Co., Ltd. Self-aligned magnetoresistive random-access memory (MRAM) structure for process damage minimization
US10008662B2 (en) 2015-03-12 2018-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. Perpendicular magnetic tunneling junction (MTJ) for improved magnetoresistive random-access memory (MRAM) process
KR20170012791A (ko) * 2015-07-24 2017-02-03 에스케이하이닉스 주식회사 전자 장치의 제조 방법
US9853205B1 (en) * 2016-10-01 2017-12-26 International Business Machines Corporation Spin transfer torque magnetic tunnel junction with off-centered current flow
US10607898B2 (en) 2017-11-08 2020-03-31 Tdk Corporation Tunnel magnetoresistive effect element, magnetic memory, and built-in memory
WO2019092817A1 (ja) 2017-11-08 2019-05-16 Tdk株式会社 トンネル磁気抵抗効果素子、磁気メモリ、及び内蔵型メモリ
CN115996579A (zh) * 2021-10-15 2023-04-21 中国科学院微电子研究所 一种sot-mram及其制造方法
EP4362650B1 (en) * 2022-10-31 2025-08-06 Commissariat à l'Energie Atomique et aux Energies Alternatives Magnetic tunnel junction, array of magnetic tunnel junctions, and associated fabrication method

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5759263A (en) * 1996-12-05 1998-06-02 Abb Research Ltd. Device and a method for epitaxially growing objects by cvd
US6738236B1 (en) 1998-05-07 2004-05-18 Seagate Technology Llc Spin valve/GMR sensor using synthetic antiferromagnetic layer pinned by Mn-alloy having a high blocking temperature
JP2001274480A (ja) * 2000-03-27 2001-10-05 Sharp Corp 磁気メモリの製造方法
US6700753B2 (en) 2000-04-12 2004-03-02 Seagate Technology Llc Spin valve structures with specular reflection layers
JP2003318460A (ja) * 2002-04-24 2003-11-07 Alps Electric Co Ltd 磁気検出素子及びその製造方法
US6781173B2 (en) 2002-08-29 2004-08-24 Micron Technology, Inc. MRAM sense layer area control
US6759263B2 (en) 2002-08-29 2004-07-06 Chentsau Ying Method of patterning a layer of magnetic material
JP2004186659A (ja) * 2002-10-07 2004-07-02 Alps Electric Co Ltd 磁気検出素子
US6956257B2 (en) * 2002-11-18 2005-10-18 Carnegie Mellon University Magnetic memory element and memory device including same
JP2004214459A (ja) 2003-01-06 2004-07-29 Sony Corp 不揮発性磁気メモリ装置及びその製造方法
JP2004259913A (ja) * 2003-02-26 2004-09-16 Sony Corp 環状体の製造方法および磁気記憶装置およびその製造方法
US6980469B2 (en) 2003-08-19 2005-12-27 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
JP2005109201A (ja) * 2003-09-30 2005-04-21 Fujitsu Ltd 強磁性トンネル接合素子、磁気メモリセル及び磁気ヘッド
JP2005129801A (ja) * 2003-10-24 2005-05-19 Sony Corp 磁気記憶素子及び磁気メモリ
JP4590862B2 (ja) * 2003-12-15 2010-12-01 ソニー株式会社 磁気メモリ装置及びその製造方法
US7105372B2 (en) * 2004-01-20 2006-09-12 Headway Technologies, Inc. Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy
JP4337641B2 (ja) 2004-06-10 2009-09-30 ソニー株式会社 不揮発性磁気メモリ装置及びフォトマスク
KR100648143B1 (ko) * 2004-11-03 2006-11-24 한국과학기술연구원 전류 인가 자기 저항 소자
US7241632B2 (en) 2005-04-14 2007-07-10 Headway Technologies, Inc. MTJ read head with sidewall spacers
JP2007053143A (ja) * 2005-08-15 2007-03-01 Sony Corp 記憶素子、メモリ
CN101000821B (zh) * 2006-01-11 2010-05-12 中国科学院物理研究所 一种闭合形状的磁性多层膜及其制备方法和用途
US7936595B2 (en) * 2005-12-31 2011-05-03 Institute Of Physics, Chinese Academy Of Sciences Close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same
US7630177B2 (en) * 2006-02-14 2009-12-08 Hitachi Global Storage Technologies Netherlands B.V. Tunnel MR head with closed-edge laminated free layer
US20070187785A1 (en) * 2006-02-16 2007-08-16 Chien-Chung Hung Magnetic memory cell and manufacturing method thereof
US8018011B2 (en) * 2007-02-12 2011-09-13 Avalanche Technology, Inc. Low cost multi-state magnetic memory
US7595520B2 (en) * 2006-07-31 2009-09-29 Magic Technologies, Inc. Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same
TWI307507B (en) 2006-10-20 2009-03-11 Ind Tech Res Inst Magnetic tunnel junction devices and magnetic random access memory
JP4384183B2 (ja) * 2007-01-26 2009-12-16 株式会社東芝 磁気抵抗素子および磁気メモリ
JP2008218829A (ja) * 2007-03-06 2008-09-18 Toshiba Corp 磁気抵抗素子及びその製造方法
US7919826B2 (en) * 2007-04-24 2011-04-05 Kabushiki Kaisha Toshiba Magnetoresistive element and manufacturing method thereof
US7486552B2 (en) 2007-05-21 2009-02-03 Grandis, Inc. Method and system for providing a spin transfer device with improved switching characteristics
JP2009094104A (ja) * 2007-10-03 2009-04-30 Toshiba Corp 磁気抵抗素子
US7688615B2 (en) 2007-12-04 2010-03-30 Macronix International Co., Ltd. Magnetic random access memory, manufacturing method and programming method thereof
US20090302403A1 (en) 2008-06-05 2009-12-10 Nguyen Paul P Spin torque transfer magnetic memory cell
US7935435B2 (en) * 2008-08-08 2011-05-03 Seagate Technology Llc Magnetic memory cell construction
US7834385B2 (en) 2008-08-08 2010-11-16 Seagate Technology Llc Multi-bit STRAM memory cells
US20100053822A1 (en) * 2008-08-28 2010-03-04 Seagate Technology Llc Stram cells with ampere field assisted switching
US7939188B2 (en) * 2008-10-27 2011-05-10 Seagate Technology Llc Magnetic stack design
US9165625B2 (en) 2008-10-30 2015-10-20 Seagate Technology Llc ST-RAM cells with perpendicular anisotropy
US8043732B2 (en) * 2008-11-11 2011-10-25 Seagate Technology Llc Memory cell with radial barrier

Also Published As

Publication number Publication date
JP2013254960A (ja) 2013-12-19
JP2013243378A (ja) 2013-12-05
JP2015156501A (ja) 2015-08-27
CN102687215B (zh) 2015-02-11
US20110180888A1 (en) 2011-07-28
US20100102406A1 (en) 2010-04-29
KR20120115205A (ko) 2012-10-17
JP2012533188A (ja) 2012-12-20
JP6193312B2 (ja) 2017-09-06
JP5752183B2 (ja) 2015-07-22
US8197953B2 (en) 2012-06-12
JP6113216B2 (ja) 2017-04-12
US7939188B2 (en) 2011-05-10
KR101459511B1 (ko) 2014-11-07
JP2015216392A (ja) 2015-12-03
CN102687215A (zh) 2012-09-19
WO2011008614A1 (en) 2011-01-20

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