JP5665463B2 - Ｉｉｉ族窒化物半導体素子製造用基板およびｉｉｉ族窒化物半導体自立基板またはｉｉｉ族窒化物半導体素子の製造方法 - Google Patents

Ｉｉｉ族窒化物半導体素子製造用基板およびｉｉｉ族窒化物半導体自立基板またはｉｉｉ族窒化物半導体素子の製造方法 Download PDF

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JP5665463B2
JP5665463B2 JP2010222767A JP2010222767A JP5665463B2 JP 5665463 B2 JP5665463 B2 JP 5665463B2 JP 2010222767 A JP2010222767 A JP 2010222767A JP 2010222767 A JP2010222767 A JP 2010222767A JP 5665463 B2 JP5665463 B2 JP 5665463B2
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layer
group iii
iii nitride
substrate
nitride semiconductor
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JP2012077345A5 (zh
JP2012077345A (ja
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鳥羽　隆一
隆一 鳥羽
雅仁 宮下
雅仁 宮下
隆文 八百
隆文 八百
藤井　克司
克司 藤井
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Dowa Holdings Co Ltd
Dowa Electronics Materials Co Ltd
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Dowa Holdings Co Ltd
Dowa Electronics Materials Co Ltd
Dowa Mining Co Ltd
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Priority to JP2010222767A priority Critical patent/JP5665463B2/ja
Priority to KR1020137008856A priority patent/KR101503618B1/ko
Priority to CN201610077452.9A priority patent/CN105529248B/zh
Priority to PCT/JP2011/073154 priority patent/WO2012043885A1/ja
Priority to CN201180047494.3A priority patent/CN103348043B/zh
Publication of JP2012077345A publication Critical patent/JP2012077345A/ja
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    • C30—CRYSTAL GROWTH
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/586—Nitriding
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
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    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

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  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Led Devices (AREA)
  • Chemical Vapour Deposition (AREA)
JP2010222767A 2010-09-30 2010-09-30 Ｉｉｉ族窒化物半導体素子製造用基板およびｉｉｉ族窒化物半導体自立基板またはｉｉｉ族窒化物半導体素子の製造方法 Active JP5665463B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010222767A JP5665463B2 (ja) 2010-09-30 2010-09-30 Ｉｉｉ族窒化物半導体素子製造用基板およびｉｉｉ族窒化物半導体自立基板またはｉｉｉ族窒化物半導体素子の製造方法
KR1020137008856A KR101503618B1 (ko) 2010-09-30 2011-09-30 Iii족 질화물 반도체 소자 제조용 기판의 제조 방법, iii족 질화물 반도체 자립 기판 또는 iii족 질화물 반도체 소자의 제조 방법, 및 iii족 질화물 성장용 기판
CN201610077452.9A CN105529248B (zh) 2010-09-30 2011-09-30 Iii族氮化物半导体元件制造用基板的制造方法、iii族氮化物半导体自支撑基板或iii族氮化物半导体元件的制造方法、以及iii族氮化物生长用基板
PCT/JP2011/073154 WO2012043885A1 (ja) 2010-09-30 2011-09-30 Iii族窒化物半導体素子製造用基板の製造方法、iii族窒化物半導体自立基板またはiii族窒化物半導体素子の製造方法、およびiii族窒化物成長用基板
CN201180047494.3A CN103348043B (zh) 2010-09-30 2011-09-30 Iii族氮化物半导体元件制造用基板的制造方法、iii族氮化物半导体自支撑基板或iii族氮化物半导体元件的制造方法、以及iii族氮化物生长用基板

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JP2010222767A JP5665463B2 (ja) 2010-09-30 2010-09-30 Ｉｉｉ族窒化物半導体素子製造用基板およびｉｉｉ族窒化物半導体自立基板またはｉｉｉ族窒化物半導体素子の製造方法

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JP2012077345A JP2012077345A (ja) 2012-04-19
JP2012077345A5 JP2012077345A5 (zh) 2013-10-24
JP5665463B2 true JP5665463B2 (ja) 2015-02-04

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KR (1) KR101503618B1 (zh)
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WO (1) WO2012043885A1 (zh)

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FR2997557B1 (fr) 2012-10-26 2016-01-01 Commissariat Energie Atomique Dispositif electronique a nanofil(s) muni d'une couche tampon en metal de transition, procede de croissance d'au moins un nanofil, et procede de fabrication d'un dispositif
FR2997420B1 (fr) * 2012-10-26 2017-02-24 Commissariat Energie Atomique Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes
KR102187487B1 (ko) * 2014-04-03 2020-12-08 엘지이노텍 주식회사 발광소자 및 이를 구비한 조명 장치
JP6832928B2 (ja) * 2015-11-11 2021-02-24 アモテック・カンパニー・リミテッド フェライトシートの製造方法およびこれを利用したフェライトシート
JP6266742B1 (ja) * 2016-12-20 2018-01-24 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板、及び、ｉｉｉ族窒化物半導体基板の製造方法
KR102513206B1 (ko) * 2018-05-23 2023-03-23 가부시키가이샤 사무코 Ⅲ족 질화물 반도체 기판의 제조 방법
TWI825187B (zh) * 2018-10-09 2023-12-11 日商東京威力科創股份有限公司 氮化物半導體膜之形成方法
CN113841223B (zh) * 2019-05-23 2024-02-06 三菱电机株式会社 半导体基板的制造方法和半导体装置的制造方法

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US6218207B1 (en) * 1998-05-29 2001-04-17 Mitsushita Electronics Corporation Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same
JP3631724B2 (ja) * 2001-03-27 2005-03-23 日本電気株式会社 Ｉｉｉ族窒化物半導体基板およびその製造方法
JP4117156B2 (ja) * 2002-07-02 2008-07-16 日本電気株式会社 Ｉｉｉ族窒化物半導体基板の製造方法
ATE522643T1 (de) * 2005-04-04 2011-09-15 Tohoku Techno Arch Co Ltd Verfahren zum züchten eines gan-einzelkristalls, verfahren zur herstellung eines gan-substrats, verfahren zur herstellung eines elements auf gan- basis und element auf gan-basis
JP4320380B2 (ja) * 2006-10-03 2009-08-26 株式会社 東北テクノアーチ 構造体
JP4248005B2 (ja) * 2006-10-03 2009-04-02 株式会社 東北テクノアーチ 基板の製造方法
JP5060875B2 (ja) * 2007-08-28 2012-10-31 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体とその製造方法

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WO2012043885A1 (ja) 2012-04-05
CN105529248B (zh) 2018-04-06
KR101503618B1 (ko) 2015-03-18
CN103348043B (zh) 2016-03-09
WO2012043885A9 (ja) 2013-07-18
JP2012077345A (ja) 2012-04-19
CN105529248A (zh) 2016-04-27
KR20130113452A (ko) 2013-10-15
CN103348043A (zh) 2013-10-09

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