JP5645500B2 - 放射線撮像装置、放射線撮像システム及び放射線撮像装置の製造方法 - Google Patents

放射線撮像装置、放射線撮像システム及び放射線撮像装置の製造方法 Download PDF

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JP5645500B2
JP5645500B2 JP2010142950A JP2010142950A JP5645500B2 JP 5645500 B2 JP5645500 B2 JP 5645500B2 JP 2010142950 A JP2010142950 A JP 2010142950A JP 2010142950 A JP2010142950 A JP 2010142950A JP 5645500 B2 JP5645500 B2 JP 5645500B2
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Japan
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heat
radiation imaging
adhesive layer
thermally expandable
imaging apparatus
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Expired - Fee Related
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JP2010142950A
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English (en)
Japanese (ja)
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JP2012007948A (ja
JP2012007948A5 (enExample
Inventor
石井　孝昌
孝昌 石井
井上　正人
正人 井上
正喜 秋山
正喜 秋山
竹田　慎市
慎市 竹田
覚 澤田
覚 澤田
大希 武井
大希 武井
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2010142950A priority Critical patent/JP5645500B2/ja
Priority to US13/806,344 priority patent/US9059343B2/en
Priority to PCT/JP2011/003342 priority patent/WO2011161897A1/en
Publication of JP2012007948A publication Critical patent/JP2012007948A/ja
Publication of JP2012007948A5 publication Critical patent/JP2012007948A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Measurement Of Radiation (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
JP2010142950A 2010-06-23 2010-06-23 放射線撮像装置、放射線撮像システム及び放射線撮像装置の製造方法 Expired - Fee Related JP5645500B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010142950A JP5645500B2 (ja) 2010-06-23 2010-06-23 放射線撮像装置、放射線撮像システム及び放射線撮像装置の製造方法
US13/806,344 US9059343B2 (en) 2010-06-23 2011-06-13 Radiation image pickup apparatus, radiation image pickup system, and method for manufacturing radiation image pickup apparatus
PCT/JP2011/003342 WO2011161897A1 (en) 2010-06-23 2011-06-13 Radiation image pickup apparatus, radiation image pickup system, and method for manufacturing radiation image pickup apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010142950A JP5645500B2 (ja) 2010-06-23 2010-06-23 放射線撮像装置、放射線撮像システム及び放射線撮像装置の製造方法

Publications (3)

Publication Number Publication Date
JP2012007948A JP2012007948A (ja) 2012-01-12
JP2012007948A5 JP2012007948A5 (enExample) 2013-07-25
JP5645500B2 true JP5645500B2 (ja) 2014-12-24

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JP2010142950A Expired - Fee Related JP5645500B2 (ja) 2010-06-23 2010-06-23 放射線撮像装置、放射線撮像システム及び放射線撮像装置の製造方法

Country Status (3)

Country Link
US (1) US9059343B2 (enExample)
JP (1) JP5645500B2 (enExample)
WO (1) WO2011161897A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013029384A (ja) * 2011-07-27 2013-02-07 Canon Inc 放射線検出装置、その製造方法および放射線検出システム
JP6071041B2 (ja) * 2012-03-30 2017-02-01 日立金属株式会社 シンチレータアレイの製造方法及び放射線検出器の製造方法
JP6270450B2 (ja) * 2013-12-13 2018-01-31 キヤノン株式会社 放射線検出装置、放射線検出システム、及び、放射線検出装置の製造方法
JP6576064B2 (ja) * 2015-03-18 2019-09-18 キヤノン株式会社 放射線検出装置、放射線撮像システム及び放射線検出装置の製造方法
US10267926B2 (en) * 2015-05-12 2019-04-23 Shimadzu Corporation Radiation detector, and radiation tomography device provided with same
JP2017092335A (ja) * 2015-11-13 2017-05-25 日東電工株式会社 半導体パッケージの製造方法
JP2017088782A (ja) * 2015-11-13 2017-05-25 日東電工株式会社 積層体および合同体・組み合わせの回収方法・半導体装置の製造方法
JP6646002B2 (ja) * 2017-03-22 2020-02-14 富士フイルム株式会社 放射線検出器及び放射線画像撮影装置
JP6707130B2 (ja) * 2017-03-22 2020-06-10 富士フイルム株式会社 放射線検出器及び放射線画像撮影装置
US10739514B2 (en) * 2017-07-21 2020-08-11 Japan Display Inc. Light source device, backlight device comprising the same and liquid crystal display device
JP6659182B2 (ja) 2018-07-23 2020-03-04 キヤノン株式会社 放射線撮像装置、その製造方法及び放射線撮像システム

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2898480B2 (ja) * 1992-09-14 1999-06-02 日東電工株式会社 加熱剥離性接着剤及び粘着部材
US6800857B2 (en) 2000-08-10 2004-10-05 Canon Kabushiki Kaisha Large-area fiber plate, radiation image pickup apparatus utilizing the same and producing method therefor
JP2008144116A (ja) * 2006-12-13 2008-06-26 Nitto Denko Corp 両面粘着シートおよび液晶表示装置
FR2916575B1 (fr) * 2007-05-23 2009-09-18 Trixell Sas Soc Par Actions Si Procede de realisation d'un detecteur de rayonnement
US8525132B2 (en) * 2007-09-06 2013-09-03 Konica Minolta Medical & Graphic, Inc. Flat panel detector
JP5142943B2 (ja) * 2007-11-05 2013-02-13 キヤノン株式会社 放射線検出装置の製造方法、放射線検出装置及び放射線撮像システム
US20100108893A1 (en) * 2008-11-04 2010-05-06 Array Optronix, Inc. Devices and Methods for Ultra Thin Photodiode Arrays on Bonded Supports
JP5441400B2 (ja) * 2008-12-19 2014-03-12 キヤノン株式会社 撮像装置、放射線撮像装置及びその製造方法
JP5597039B2 (ja) * 2010-06-23 2014-10-01 キヤノン株式会社 放射線撮像装置、放射線撮像システム及び放射線撮像装置の製造方法

Also Published As

Publication number Publication date
WO2011161897A1 (en) 2011-12-29
US9059343B2 (en) 2015-06-16
US20130099344A1 (en) 2013-04-25
JP2012007948A (ja) 2012-01-12

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