JP5642317B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP5642317B2 JP5642317B2 JP2014506190A JP2014506190A JP5642317B2 JP 5642317 B2 JP5642317 B2 JP 5642317B2 JP 2014506190 A JP2014506190 A JP 2014506190A JP 2014506190 A JP2014506190 A JP 2014506190A JP 5642317 B2 JP5642317 B2 JP 5642317B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- manufacturing
- solution
- insulating substrate
- base plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 83
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- 239000010949 copper Substances 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 19
- 239000003153 chemical reaction reagent Substances 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- 238000003825 pressing Methods 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 238000005304 joining Methods 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 125000000524 functional group Chemical group 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 6
- 230000001603 reducing effect Effects 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 238000002791 soaking Methods 0.000 claims 6
- 238000007598 dipping method Methods 0.000 claims 2
- 239000013545 self-assembled monolayer Substances 0.000 description 40
- 239000002094 self assembled monolayer Substances 0.000 description 39
- 239000010410 layer Substances 0.000 description 36
- 230000015572 biosynthetic process Effects 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 238000007654 immersion Methods 0.000 description 5
- 101100390805 Mus musculus Fkbp8 gene Proteins 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 239000007790 solid phase Substances 0.000 description 4
- 238000005219 brazing Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 150000003573 thiols Chemical class 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000005232 molecular self-assembly Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- UGZAJZLUKVKCBM-UHFFFAOYSA-N 6-sulfanylhexan-1-ol Chemical compound OCCCCCCS UGZAJZLUKVKCBM-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910002482 Cu–Ni Inorganic materials 0.000 description 1
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020830 Sn-Bi Inorganic materials 0.000 description 1
- 229910020935 Sn-Sb Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910018728 Sn—Bi Inorganic materials 0.000 description 1
- 229910008757 Sn—Sb Inorganic materials 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29075—Plural core members
- H01L2224/2908—Plural core members being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
- H01L2224/83002—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a removable or sacrificial coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/8301—Cleaning the layer connector, e.g. oxide removal step, desmearing
- H01L2224/83011—Chemical cleaning, e.g. etching, flux
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83193—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83447—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/8382—Diffusion bonding
- H01L2224/8383—Solid-solid interdiffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Die Bonding (AREA)
Description
図1は、本発明に関わる半導体装置の全体図を示している。半導体装置100は、ベース板8、半導体素子9、電極付絶縁基板10などから構成されている。ベース板8の上には電極付絶縁基板10が、電極付絶縁基板10の上には半導体素子9が、それぞれ直接接合されている。半導体素子9は、半導体チップ1、金属シリサイド層2、第1金属層(Ni)3及び、第2金属層(Cu)4から構成されている。電極付絶縁基板10は、電極5a、ろう材6、絶縁基板7、電極5bから構成されている。第1金属層3と第2金属層4は所定の回路パターンが形成されていてもよい。半導体素子9と電極付絶縁基板10はエポキシ樹脂などによって封止されている。
チオール系
(CH)nSHの分子;n=2〜16
OH(CH)nSHの分子;n=2〜11
HS(CH)nSHの分子;n=2〜16
アミン系
(CH)nNH2の分子;n=2〜16
OH(CH)nNH2の分子;n=2〜11
NH2(CH)nNH2の分子;n=2〜16
チオール+アミン系
SH(CH)nNH2の分子;n=2〜16
図3は、実施の形態2にかかわる半導体装置の製造方法を説明するための、断面外略図である。電極付絶縁基板10は、60mm角の絶縁基板(0.32mmt)を、58mm角の銅板(0.4mmt)で両側から挟んだ構造を有している。ベース板8には、100mm角の銅板(3.0mmt)を使用した。第2金属層4、電極5a、電極5bおよびベース板8の表面は、機械研磨により、±10nm程度の平坦度、3nm以下の表面粗さ(Rz)になるように仕上げた。
実施の形態1に基づいて作成された半導体装置と、SAMを形成しないで作成された半導体装置との密着強度を比較する実験を行った。比較サンプルの作製方法を説明する。半導体素子9と電極付絶縁基板10は、前記した方法で作成した。SAM形成を行っていない電極付絶縁基板10、ベース板8及び半導体素子9を用いて、前記と同様の方法で加熱加圧接合した。各半導体装置は、3個ずつ作製した。接合装置は、アスリートFA株式会社製造の加熱加圧ユニットを用いた。
Claims (9)
- 還元性官能基を有する高分子試薬が有機溶媒に溶解している溶液を準備する工程と、
金属製のベース板を前記溶液に浸漬する工程と、
両面に金属層が形成されている絶縁基板を前記溶液に浸漬する工程と、
前記浸漬する工程を経たベース板と前記浸漬する工程を経た絶縁基板を、接触させ、加圧しながら加熱し、前記ベース板と前記絶縁基板との接合体を作成する工程と、
前記接合体を前記溶液に浸漬する工程と、
片面に金属層が形成されている半導体チップを前記溶液に浸漬する工程と、
前記浸漬する工程を経た接合体と前記浸漬する工程を経た半導体チップを、接触させ、加圧しながら加熱し、接合する工程とを備えていることを特徴とする半導体装置の製造方法。 - 還元性官能基を有する高分子試薬が有機溶媒に溶解している溶液を準備する工程と、
両面に金属層が形成されている絶縁基板を前記溶液に浸漬する工程と、
片面に金属層が形成されている半導体チップを前記溶液に浸漬する工程と、
前記浸漬する工程を経た絶縁基板と前記浸漬する工程を経た半導体チップを、接触させ、加圧しながら加熱し、前記絶縁基板と前記半導体チップとの接合体を作成する工程とを備えていることを特徴とする半導体装置の製造方法。 - 前記接合体を前記溶液に浸漬する工程と、
金属製のベース板を前記溶液に浸漬する工程と、
前記浸漬する工程を経た接合体と前記浸漬する工程を経たベース板を接触させ、加圧しながら加熱し、接合する工程とを備えていることを特徴とする請求項2に記載の半導体装置の製造方法。 - 前記金属層および前記ベース板は、銅またはニッケルを含むことを特徴とする請求項1または3に記載の半導体装置の製造方法。
- 前記高分子試薬は、還元性官能基としてチオール基を有することを特徴とする特徴とす
る請求項1または2に記載の半導体装置の製造方法。 - 前記高分子試薬は、直鎖状の分子構造を有することを特徴とする特徴とする請求項1または2に記載の半導体装置の製造方法。
- 前記高分子試薬の分子構造中の炭素原子の数は、16以下であることを特徴とする請求項6に記載の半導体装置の製造方法。
- 前記半導体チップの少なくとも一部がワイドバンドギャップ半導体により形成されていることを特徴とする請求項1乃至7のいずれか1項に記載の半導体装置の製造方法。
- 前記ワイドバンドギャップ半導体は、炭化珪素、窒化ガリウム系材料、ダイヤモンドのいずれかの半導体であることを特徴とする請求項8に記載の半導体装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014506190A JP5642317B2 (ja) | 2012-03-19 | 2013-03-15 | 半導体装置の製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012061502 | 2012-03-19 | ||
JP2012061502 | 2012-03-19 | ||
JP2014506190A JP5642317B2 (ja) | 2012-03-19 | 2013-03-15 | 半導体装置の製造方法 |
PCT/JP2013/057366 WO2013141149A1 (ja) | 2012-03-19 | 2013-03-15 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP5642317B2 true JP5642317B2 (ja) | 2014-12-17 |
JPWO2013141149A1 JPWO2013141149A1 (ja) | 2015-08-03 |
Family
ID=49222608
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014506190A Active JP5642317B2 (ja) | 2012-03-19 | 2013-03-15 | 半導体装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5642317B2 (ja) |
DE (1) | DE112013001555B4 (ja) |
WO (1) | WO2013141149A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104150436A (zh) * | 2014-09-09 | 2014-11-19 | 哈尔滨工业大学 | 基于聚合物材质微流控芯片的有机溶剂混溶溶液浸泡键合方法 |
US10316406B2 (en) | 2015-10-21 | 2019-06-11 | Ultratech, Inc. | Methods of forming an ALD-inhibiting layer using a self-assembled monolayer |
CN108122823B (zh) * | 2016-11-30 | 2020-11-03 | 中芯国际集成电路制造(上海)有限公司 | 晶圆键合方法及晶圆键合结构 |
WO2018154870A1 (ja) * | 2017-02-27 | 2018-08-30 | 三菱電機株式会社 | 金属接合方法、半導体装置の製造方法、及び半導体装置 |
US11011440B2 (en) * | 2017-03-23 | 2021-05-18 | Mitsubishi Electric Corporation | Semiconductor element bonding body, semiconductor device, and method of manufacturing semiconductor element bonding body |
WO2021130989A1 (ja) * | 2019-12-26 | 2021-07-01 | 三菱電機株式会社 | パワーモジュールおよび電力変換装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001168317A (ja) * | 1999-12-13 | 2001-06-22 | Nec Corp | 金属微粒子秩序構造形成方法 |
US20100187002A1 (en) * | 2009-01-29 | 2010-07-29 | Seung Seoup Lee | Method of attaching die using self-assembling monolayer and package substrate including die attached thereto using self-assembling monolayer |
WO2012081144A1 (ja) * | 2010-12-15 | 2012-06-21 | パナソニック株式会社 | 半導体装置及びその製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5897341A (en) * | 1998-07-02 | 1999-04-27 | Fujitsu Limited | Diffusion bonded interconnect |
US20110192445A1 (en) * | 2008-03-13 | 2011-08-11 | Florian Solzbacher | High precision, high speed solar cell arrangement to a concentrator lens array and methods of making the same |
-
2013
- 2013-03-15 DE DE112013001555.2T patent/DE112013001555B4/de active Active
- 2013-03-15 WO PCT/JP2013/057366 patent/WO2013141149A1/ja active Application Filing
- 2013-03-15 JP JP2014506190A patent/JP5642317B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001168317A (ja) * | 1999-12-13 | 2001-06-22 | Nec Corp | 金属微粒子秩序構造形成方法 |
US20100187002A1 (en) * | 2009-01-29 | 2010-07-29 | Seung Seoup Lee | Method of attaching die using self-assembling monolayer and package substrate including die attached thereto using self-assembling monolayer |
WO2012081144A1 (ja) * | 2010-12-15 | 2012-06-21 | パナソニック株式会社 | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2013141149A1 (ja) | 2015-08-03 |
DE112013001555B4 (de) | 2017-11-30 |
DE112013001555T5 (de) | 2015-02-19 |
WO2013141149A1 (ja) | 2013-09-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5642317B2 (ja) | 半導体装置の製造方法 | |
TWI335850B (en) | Joints and method for forming the same | |
Kisiel et al. | Die-attachment solutions for SiC power devices | |
JP5523680B2 (ja) | 接合体、半導体装置および接合体の製造方法 | |
KR20160051766A (ko) | 금속 소결 필름 조성물 | |
JP2006202938A (ja) | 半導体装置及びその製造方法 | |
JP2016105452A (ja) | 接合体の製造方法、多層接合体の製造方法、パワーモジュール用基板の製造方法、ヒートシンク付パワーモジュール用基板の製造方法及び積層体の製造装置 | |
JP5938390B2 (ja) | パワーモジュール | |
US20130001803A1 (en) | Method for attaching a metal surface to a carrier, a method for attaching a chip to a chip carrier, a chip-packaging module and a packaging module | |
JP2013038330A (ja) | 半導体装置の製造方法及び半導体装置 | |
JP5936407B2 (ja) | パワーモジュール製造方法 | |
Lee et al. | Advances in bonding technology for electronic packaging | |
JP2010524831A (ja) | メタライズされたセラミックボディを有するコンポーネント | |
JP2013209720A (ja) | 金属体の接合方法 | |
JP2021107569A (ja) | 銅焼結基板ナノ銀含浸型接合シート、製法及び接合方法 | |
JP5526336B2 (ja) | 半田層及びそれを用いたデバイス接合用基板並びにその製造方法 | |
JP4136844B2 (ja) | 電子部品の実装方法 | |
JP5828352B2 (ja) | 銅/セラミックス接合体、及び、パワーモジュール用基板 | |
JP5825380B2 (ja) | 銅/セラミックス接合体、及び、パワーモジュール用基板 | |
JP2016041434A (ja) | 接合体の製造方法、パワーモジュール用基板の製造方法、及び、ヒートシンク付パワーモジュール用基板の製造方法 | |
Larsson et al. | A review of eutectic Au-Ge solder joints | |
JP6020496B2 (ja) | 接合構造体およびその製造方法 | |
JP6269116B2 (ja) | 下地層付き金属部材、絶縁回路基板、半導体装置、ヒートシンク付き絶縁回路基板、及び、下地層付き金属部材の製造方法 | |
JP2009039769A (ja) | 接合シート | |
JP5733466B2 (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140930 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141028 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5642317 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |