JP5639772B2 - 感活性光線性又は感放射線性樹脂組成物、並びに、それを用いたレジスト膜及びパターン形成方法 - Google Patents
感活性光線性又は感放射線性樹脂組成物、並びに、それを用いたレジスト膜及びパターン形成方法 Download PDFInfo
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- JP5639772B2 JP5639772B2 JP2010053844A JP2010053844A JP5639772B2 JP 5639772 B2 JP5639772 B2 JP 5639772B2 JP 2010053844 A JP2010053844 A JP 2010053844A JP 2010053844 A JP2010053844 A JP 2010053844A JP 5639772 B2 JP5639772 B2 JP 5639772B2
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Classifications
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010053844A JP5639772B2 (ja) | 2010-03-10 | 2010-03-10 | 感活性光線性又は感放射線性樹脂組成物、並びに、それを用いたレジスト膜及びパターン形成方法 |
| PCT/JP2011/055717 WO2011111805A1 (fr) | 2010-03-10 | 2011-03-04 | Composition de résine sensible à un rayonnement ou aux rayons actiniques et film de réserve et procédé de formation de motifs l'utilisant |
| KR1020127023524A KR20130016214A (ko) | 2010-03-10 | 2011-03-04 | 감활성광선성 또는 감방사선성 수지 조성물, 이것을 사용한 레지스트 막 및 패턴형성방법 |
| EP11753463.6A EP2545412A4 (fr) | 2010-03-10 | 2011-03-04 | Composition de résine sensible à un rayonnement ou aux rayons actiniques et film de réserve et procédé de formation de motifs l'utilisant |
| US13/521,332 US8795945B2 (en) | 2010-03-10 | 2011-03-04 | Actinic ray-sensitive or radiation-sensitive resin composition, and resist film and pattern forming method using the same |
| TW100107936A TWI505021B (zh) | 2010-03-10 | 2011-03-09 | 感光化射線性或感放射線性樹脂組合物及使用其的光阻膜及圖案形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010053844A JP5639772B2 (ja) | 2010-03-10 | 2010-03-10 | 感活性光線性又は感放射線性樹脂組成物、並びに、それを用いたレジスト膜及びパターン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011186340A JP2011186340A (ja) | 2011-09-22 |
| JP5639772B2 true JP5639772B2 (ja) | 2014-12-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| JP2010053844A Active JP5639772B2 (ja) | 2010-03-10 | 2010-03-10 | 感活性光線性又は感放射線性樹脂組成物、並びに、それを用いたレジスト膜及びパターン形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8795945B2 (fr) |
| EP (1) | EP2545412A4 (fr) |
| JP (1) | JP5639772B2 (fr) |
| KR (1) | KR20130016214A (fr) |
| TW (1) | TWI505021B (fr) |
| WO (1) | WO2011111805A1 (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5286236B2 (ja) * | 2009-11-30 | 2013-09-11 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、それを用いて形成した膜及びそれを用いたパターン形成方法 |
| US9274423B2 (en) * | 2011-08-04 | 2016-03-01 | Lg Chem, Ltd. | Fluorine-based resins and photosensitive resin composition comprising the same |
| US9261786B2 (en) | 2012-04-02 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photosensitive material and method of photolithography |
| US9213234B2 (en) * | 2012-06-01 | 2015-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photosensitive material and method of lithography |
| US9146469B2 (en) | 2013-03-14 | 2015-09-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Middle layer composition for trilayer patterning stack |
| US11385543B2 (en) | 2016-08-09 | 2022-07-12 | Merck Patent Gmbh | Enviromentally stable, thick film, chemically amplified resist |
| JP6813326B2 (ja) * | 2016-10-06 | 2021-01-13 | 東京応化工業株式会社 | レジストパターンのラフネスを低減させるために用いられる被覆剤、及びラフネスが低減されたレジストパターンの製造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69714502D1 (de) * | 1996-04-25 | 2002-09-12 | Fuji Photo Film Co Ltd | Positiv-arbeitende lichtempfindliche Zusammensetzung |
| JP3525651B2 (ja) * | 1996-10-15 | 2004-05-10 | 信越化学工業株式会社 | 三環式芳香族骨格を有するカルボン酸誘導体 |
| JP3206740B2 (ja) * | 1998-07-30 | 2001-09-10 | 日本電気株式会社 | 化学増幅系レジスト |
| TWI277830B (en) * | 1999-01-28 | 2007-04-01 | Sumitomo Chemical Co | Resist composition |
| JP4480835B2 (ja) | 1999-02-12 | 2010-06-16 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | ポジ型感放射線性樹脂組成物 |
| JP4025074B2 (ja) * | 2001-09-19 | 2007-12-19 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
| JP2004102264A (ja) * | 2002-08-19 | 2004-04-02 | Fuji Photo Film Co Ltd | 化学増幅型レジスト組成物及びそれを用いたパターン形成方法 |
| US6830871B2 (en) | 2002-08-19 | 2004-12-14 | Fuji Photo Film Co., Ltd. | Chemical amplification type resist composition |
| JP4109085B2 (ja) | 2002-11-06 | 2008-06-25 | 富士フイルム株式会社 | 電子ビーム描画方法 |
| US7232640B1 (en) * | 2003-03-31 | 2007-06-19 | Fujifilm Corporation | Positive resist composition |
| JP4893270B2 (ja) * | 2006-11-29 | 2012-03-07 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
| JP2008162101A (ja) | 2006-12-27 | 2008-07-17 | Fujifilm Corp | モールド構造体の製造方法 |
| JP2009288344A (ja) * | 2008-05-27 | 2009-12-10 | Fujifilm Corp | ポジ型レジスト組成物、及び該組成物を用いたパターン形成方法 |
-
2010
- 2010-03-10 JP JP2010053844A patent/JP5639772B2/ja active Active
-
2011
- 2011-03-04 WO PCT/JP2011/055717 patent/WO2011111805A1/fr active Application Filing
- 2011-03-04 US US13/521,332 patent/US8795945B2/en active Active
- 2011-03-04 KR KR1020127023524A patent/KR20130016214A/ko not_active Application Discontinuation
- 2011-03-04 EP EP11753463.6A patent/EP2545412A4/fr not_active Withdrawn
- 2011-03-09 TW TW100107936A patent/TWI505021B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP2545412A1 (fr) | 2013-01-16 |
| KR20130016214A (ko) | 2013-02-14 |
| TW201133136A (en) | 2011-10-01 |
| US20120301831A1 (en) | 2012-11-29 |
| TWI505021B (zh) | 2015-10-21 |
| EP2545412A4 (fr) | 2013-11-13 |
| US8795945B2 (en) | 2014-08-05 |
| WO2011111805A1 (fr) | 2011-09-15 |
| JP2011186340A (ja) | 2011-09-22 |
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