EP2545412A4 - Composition de résine sensible à un rayonnement ou aux rayons actiniques et film de réserve et procédé de formation de motifs l'utilisant - Google Patents

Composition de résine sensible à un rayonnement ou aux rayons actiniques et film de réserve et procédé de formation de motifs l'utilisant

Info

Publication number
EP2545412A4
EP2545412A4 EP11753463.6A EP11753463A EP2545412A4 EP 2545412 A4 EP2545412 A4 EP 2545412A4 EP 11753463 A EP11753463 A EP 11753463A EP 2545412 A4 EP2545412 A4 EP 2545412A4
Authority
EP
European Patent Office
Prior art keywords
sensitive
radiation
resin composition
forming method
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11753463.6A
Other languages
German (de)
English (en)
Other versions
EP2545412A1 (fr
Inventor
Kana Fujii
Takamitsu Tomiga
Toru Fujimori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of EP2545412A1 publication Critical patent/EP2545412A1/fr
Publication of EP2545412A4 publication Critical patent/EP2545412A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
EP11753463.6A 2010-03-10 2011-03-04 Composition de résine sensible à un rayonnement ou aux rayons actiniques et film de réserve et procédé de formation de motifs l'utilisant Withdrawn EP2545412A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010053844A JP5639772B2 (ja) 2010-03-10 2010-03-10 感活性光線性又は感放射線性樹脂組成物、並びに、それを用いたレジスト膜及びパターン形成方法
PCT/JP2011/055717 WO2011111805A1 (fr) 2010-03-10 2011-03-04 Composition de résine sensible à un rayonnement ou aux rayons actiniques et film de réserve et procédé de formation de motifs l'utilisant

Publications (2)

Publication Number Publication Date
EP2545412A1 EP2545412A1 (fr) 2013-01-16
EP2545412A4 true EP2545412A4 (fr) 2013-11-13

Family

ID=44563603

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11753463.6A Withdrawn EP2545412A4 (fr) 2010-03-10 2011-03-04 Composition de résine sensible à un rayonnement ou aux rayons actiniques et film de réserve et procédé de formation de motifs l'utilisant

Country Status (6)

Country Link
US (1) US8795945B2 (fr)
EP (1) EP2545412A4 (fr)
JP (1) JP5639772B2 (fr)
KR (1) KR20130016214A (fr)
TW (1) TWI505021B (fr)
WO (1) WO2011111805A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5286236B2 (ja) * 2009-11-30 2013-09-11 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、それを用いて形成した膜及びそれを用いたパターン形成方法
US9274423B2 (en) * 2011-08-04 2016-03-01 Lg Chem, Ltd. Fluorine-based resins and photosensitive resin composition comprising the same
US9261786B2 (en) 2012-04-02 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Photosensitive material and method of photolithography
US9213234B2 (en) 2012-06-01 2015-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Photosensitive material and method of lithography
US9146469B2 (en) 2013-03-14 2015-09-29 Taiwan Semiconductor Manufacturing Company, Ltd. Middle layer composition for trilayer patterning stack
JP6818888B2 (ja) * 2016-08-09 2021-01-20 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ 環境的に安定した厚膜化学増幅レジスト
JP6813326B2 (ja) * 2016-10-06 2021-01-13 東京応化工業株式会社 レジストパターンのラフネスを低減させるために用いられる被覆剤、及びラフネスが低減されたレジストパターンの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0803775A1 (fr) * 1996-04-25 1997-10-29 Fuji Photo Film Co., Ltd. Composition photosensible de type positif
US20080153036A1 (en) * 2006-11-29 2008-06-26 Sumitomo Chemical Company, Limited Chemically amplified positive resist compostion

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3525651B2 (ja) * 1996-10-15 2004-05-10 信越化学工業株式会社 三環式芳香族骨格を有するカルボン酸誘導体
JP3206740B2 (ja) * 1998-07-30 2001-09-10 日本電気株式会社 化学増幅系レジスト
TWI277830B (en) * 1999-01-28 2007-04-01 Sumitomo Chemical Co Resist composition
JP4480835B2 (ja) 1999-02-12 2010-06-16 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ポジ型感放射線性樹脂組成物
JP4025074B2 (ja) * 2001-09-19 2007-12-19 富士フイルム株式会社 ポジ型レジスト組成物
JP2004102264A (ja) * 2002-08-19 2004-04-02 Fuji Photo Film Co Ltd 化学増幅型レジスト組成物及びそれを用いたパターン形成方法
US6830871B2 (en) * 2002-08-19 2004-12-14 Fuji Photo Film Co., Ltd. Chemical amplification type resist composition
JP4109085B2 (ja) 2002-11-06 2008-06-25 富士フイルム株式会社 電子ビーム描画方法
ATE446530T1 (de) * 2003-03-31 2009-11-15 Fujifilm Corp Positiv arbeitende resistzusammensetzung
JP2008162101A (ja) 2006-12-27 2008-07-17 Fujifilm Corp モールド構造体の製造方法
JP2009288344A (ja) * 2008-05-27 2009-12-10 Fujifilm Corp ポジ型レジスト組成物、及び該組成物を用いたパターン形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0803775A1 (fr) * 1996-04-25 1997-10-29 Fuji Photo Film Co., Ltd. Composition photosensible de type positif
US20080153036A1 (en) * 2006-11-29 2008-06-26 Sumitomo Chemical Company, Limited Chemically amplified positive resist compostion

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2011111805A1 *

Also Published As

Publication number Publication date
US20120301831A1 (en) 2012-11-29
JP2011186340A (ja) 2011-09-22
EP2545412A1 (fr) 2013-01-16
TWI505021B (zh) 2015-10-21
KR20130016214A (ko) 2013-02-14
US8795945B2 (en) 2014-08-05
JP5639772B2 (ja) 2014-12-10
WO2011111805A1 (fr) 2011-09-15
TW201133136A (en) 2011-10-01

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