JP5639147B2 - 両面研削機における極薄被加工物の材料除去機械加工方法 - Google Patents
両面研削機における極薄被加工物の材料除去機械加工方法 Download PDFInfo
- Publication number
- JP5639147B2 JP5639147B2 JP2012502511A JP2012502511A JP5639147B2 JP 5639147 B2 JP5639147 B2 JP 5639147B2 JP 2012502511 A JP2012502511 A JP 2012502511A JP 2012502511 A JP2012502511 A JP 2012502511A JP 5639147 B2 JP5639147 B2 JP 5639147B2
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- carrier
- machining
- processing
- disk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/10—Single-purpose machines or devices
- B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
- B24B7/17—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009015878A DE102009015878A1 (de) | 2009-04-01 | 2009-04-01 | Verfahren zum materialabtragenden Bearbeiten von flachen Werkstücken |
| DE102009015878.2 | 2009-04-01 | ||
| PCT/EP2010/002090 WO2010112225A1 (de) | 2009-04-01 | 2010-04-01 | Verfahren zum materialabtragenden bearbeiten von sehr dünnen werkstücken in einer doppelseitenschleifmaschine |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012522649A JP2012522649A (ja) | 2012-09-27 |
| JP2012522649A5 JP2012522649A5 (enExample) | 2014-08-07 |
| JP5639147B2 true JP5639147B2 (ja) | 2014-12-10 |
Family
ID=42269533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012502511A Active JP5639147B2 (ja) | 2009-04-01 | 2010-04-01 | 両面研削機における極薄被加工物の材料除去機械加工方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20120052771A1 (enExample) |
| EP (1) | EP2414133B1 (enExample) |
| JP (1) | JP5639147B2 (enExample) |
| KR (1) | KR101760355B1 (enExample) |
| CN (1) | CN102378668A (enExample) |
| DE (1) | DE102009015878A1 (enExample) |
| SG (1) | SG174365A1 (enExample) |
| WO (1) | WO2010112225A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103158054B (zh) * | 2011-12-19 | 2016-02-03 | 张卫兴 | 两种在双面研抛机上实现的单面抛光方法 |
| US9427841B2 (en) * | 2013-03-15 | 2016-08-30 | Ii-Vi Incorporated | Double-sided polishing of hard substrate materials |
| WO2015080295A1 (ja) * | 2013-11-29 | 2015-06-04 | Hoya株式会社 | 研磨処理用キャリア、研磨処理用キャリアの製造方法、及び磁気ディスク用基板の製造方法 |
| DE102014106100A1 (de) * | 2014-04-30 | 2015-11-05 | Ev Group E. Thallner Gmbh | Verfahren und Vorrichtung zum Vergleichmäßigen eines Substratstapels |
| CN106625065A (zh) * | 2017-01-17 | 2017-05-10 | 宜兴市科兴合金材料有限公司 | 一种能够回收碎屑的钼圆片打磨装置 |
| CN108188931A (zh) * | 2017-12-22 | 2018-06-22 | 华侨大学 | 双面行星磨削/研磨加工中工件破碎的在线控制系统 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5894964A (ja) * | 1981-11-27 | 1983-06-06 | Toshiba Corp | 研摩装置 |
| JPS62264864A (ja) * | 1986-05-10 | 1987-11-17 | Sony Corp | 基体の研摩方法 |
| JPS6362673A (ja) * | 1986-09-01 | 1988-03-18 | Speedfam Co Ltd | 定寸機構付き平面研磨装置 |
| DE3929484A1 (de) * | 1989-09-05 | 1991-03-14 | Wacker Chemitronic | Verfahren zum zweiseitigen chemomechanischen polieren von halbleiterscheiben, sowie vorrichtung zu seiner durchfuehrung und dadurch erhaeltliche halbleiterscheiben |
| DE4131752A1 (de) * | 1991-09-24 | 1993-03-25 | Wolters Peter Fa | Verfahren zum einseitigen flaechenbearbeiten von werkstuecken |
| US5538460A (en) | 1992-01-16 | 1996-07-23 | System Seiko Co., Ltd. | Apparatus for grinding hard disk substrates |
| JPH07227756A (ja) * | 1994-02-21 | 1995-08-29 | Speedfam Co Ltd | ワークの研磨方法及び装置 |
| JPH09270401A (ja) * | 1996-01-31 | 1997-10-14 | Shin Etsu Handotai Co Ltd | 半導体ウェーハの研磨方法 |
| JP3327175B2 (ja) * | 1997-07-18 | 2002-09-24 | 株式会社ニコン | 検知部及びこの検知部を具えたウェハ研磨装置 |
| US5975998A (en) | 1997-09-26 | 1999-11-02 | Memc Electronic Materials , Inc. | Wafer processing apparatus |
| US6080042A (en) * | 1997-10-31 | 2000-06-27 | Virginia Semiconductor, Inc. | Flatness and throughput of single side polishing of wafers |
| JPH11189500A (ja) * | 1997-12-26 | 1999-07-13 | Toshiba Corp | 酸化物単結晶基板の製造方法 |
| JP2000317815A (ja) * | 1998-06-26 | 2000-11-21 | Yoshiaki Nagaura | 圧電素子およびその加工方法 |
| WO2001082354A1 (en) * | 2000-04-24 | 2001-11-01 | Sumitomo Mitsubishi Silicon Corporation | Method of manufacturing semiconductor wafer |
| JP2001347447A (ja) * | 2000-06-08 | 2001-12-18 | Fujikoshi Mach Corp | テープ研磨装置 |
| DE102004063870A1 (de) * | 2004-12-30 | 2006-07-13 | Supfina Grieshaber Gmbh & Co.Kg | Werkstückdickenmessung mit Ultra- oder Megaschall |
| JP2007281067A (ja) * | 2006-04-04 | 2007-10-25 | Nitto Denko Corp | 半導体装置の製造方法、及びそれに用いる半導体ウェハ加工用の粘着シート |
| JP2008004648A (ja) * | 2006-06-21 | 2008-01-10 | Matsushita Electric Ind Co Ltd | 研磨装置及び研磨方法 |
| DE102006032455A1 (de) * | 2006-07-13 | 2008-04-10 | Siltronic Ag | Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben sowie Halbleierscheibe mit hervorragender Ebenheit |
| DE102007056628B4 (de) * | 2007-03-19 | 2019-03-14 | Siltronic Ag | Verfahren und Vorrichtung zum gleichzeitigen Schleifen mehrerer Halbleiterscheiben |
| EP2137757B1 (en) * | 2007-04-17 | 2015-09-02 | Imec | Method for reducing the thickness of substrates |
| ITBO20070504A1 (it) * | 2007-07-20 | 2009-01-21 | Marposs Spa | Apparecchiatura e metodo per il controllo dello spessore di un elemento in lavorazione |
-
2009
- 2009-04-01 DE DE102009015878A patent/DE102009015878A1/de not_active Ceased
-
2010
- 2010-04-01 KR KR1020117023576A patent/KR101760355B1/ko active Active
- 2010-04-01 US US13/262,596 patent/US20120052771A1/en not_active Abandoned
- 2010-04-01 JP JP2012502511A patent/JP5639147B2/ja active Active
- 2010-04-01 CN CN2010800147754A patent/CN102378668A/zh active Pending
- 2010-04-01 WO PCT/EP2010/002090 patent/WO2010112225A1/de not_active Ceased
- 2010-04-01 EP EP10712902.5A patent/EP2414133B1/de active Active
- 2010-04-01 SG SG2011065844A patent/SG174365A1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN102378668A (zh) | 2012-03-14 |
| DE102009015878A1 (de) | 2010-10-07 |
| WO2010112225A1 (de) | 2010-10-07 |
| EP2414133A1 (de) | 2012-02-08 |
| EP2414133B1 (de) | 2016-11-23 |
| KR20110135401A (ko) | 2011-12-16 |
| JP2012522649A (ja) | 2012-09-27 |
| KR101760355B1 (ko) | 2017-07-21 |
| US20120052771A1 (en) | 2012-03-01 |
| SG174365A1 (en) | 2011-10-28 |
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