JP5637929B2 - 分散補償電子ビーム装置および方法 - Google Patents

分散補償電子ビーム装置および方法 Download PDF

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Publication number
JP5637929B2
JP5637929B2 JP2011102799A JP2011102799A JP5637929B2 JP 5637929 B2 JP5637929 B2 JP 5637929B2 JP 2011102799 A JP2011102799 A JP 2011102799A JP 2011102799 A JP2011102799 A JP 2011102799A JP 5637929 B2 JP5637929 B2 JP 5637929B2
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Prior art keywords
dispersion
electron beam
primary
electron
deflector
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JP2011238612A5 (enExample
JP2011238612A (ja
Inventor
ラニオ ステファン
ラニオ ステファン
ショーネッカー ジェラルド
ショーネッカー ジェラルド
Original Assignee
アイシーティー インテグレーテッド サーキット テスティング ゲゼルシャフト フィーア ハルプライタープリーフテヒニック エム ベー ハー
アイシーティー インテグレーテッド サーキット テスティング ゲゼルシャフト フィーア ハルプライタープリーフテヒニック エム ベー ハー
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Publication of JP2011238612A publication Critical patent/JP2011238612A/ja
Publication of JP2011238612A5 publication Critical patent/JP2011238612A5/ja
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06Electron sources; Electron guns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1471Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1478Beam tilting means, i.e. for stereoscopy or for beam channelling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15Means for deflecting or directing discharge
    • H01J2237/152Magnetic means
    • H01J2237/1523Prisms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153Correcting image defects, e.g. stigmators
    • H01J2237/1534Aberrations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2011102799A 2010-05-07 2011-05-02 分散補償電子ビーム装置および方法 Expired - Fee Related JP5637929B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP10162334.6 2010-05-07
EP20100162334 EP2385542B1 (en) 2010-05-07 2010-05-07 Electron beam device with dispersion compensation, and method of operating same

Publications (3)

Publication Number Publication Date
JP2011238612A JP2011238612A (ja) 2011-11-24
JP2011238612A5 JP2011238612A5 (enExample) 2014-06-19
JP5637929B2 true JP5637929B2 (ja) 2014-12-10

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JP2011102799A Expired - Fee Related JP5637929B2 (ja) 2010-05-07 2011-05-02 分散補償電子ビーム装置および方法

Country Status (5)

Country Link
US (1) US9048068B2 (enExample)
EP (1) EP2385542B1 (enExample)
JP (1) JP5637929B2 (enExample)
KR (1) KR101556236B1 (enExample)
TW (1) TWI488209B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5386544B2 (ja) * 2011-06-07 2014-01-15 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム露光方法
JP6037693B2 (ja) * 2012-07-23 2016-12-07 株式会社日立ハイテクノロジーズ 荷電粒子線装置
EP2779204A1 (en) * 2013-03-15 2014-09-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Electron gun arrangement
US9330884B1 (en) * 2014-11-11 2016-05-03 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Dome detection for charged particle beam device
US9805908B2 (en) * 2015-02-18 2017-10-31 Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Signal charged particle deflection device, signal charged particle detection system, charged particle beam device and method of detection of a signal charged particle beam
KR20190091577A (ko) * 2015-07-22 2019-08-06 에이에스엠엘 네델란즈 비.브이. 복수의 하전 입자 빔을 이용하는 장치
EP3203493B1 (en) * 2016-02-02 2018-10-03 FEI Company Charged-particle microscope with astigmatism compensation and energy-selection
US10090131B2 (en) * 2016-12-07 2018-10-02 Kla-Tencor Corporation Method and system for aberration correction in an electron beam system
JP7135009B2 (ja) * 2017-07-28 2022-09-12 エーエスエムエル ネザーランズ ビー.ブイ. マルチビーム装置におけるビームセパレータの分散を補償するためのシステム及び方法
US10504687B2 (en) * 2018-02-20 2019-12-10 Technische Universiteit Delft Signal separator for a multi-beam charged particle inspection apparatus
JP6919063B2 (ja) * 2018-03-30 2021-08-11 株式会社日立ハイテク 荷電粒子線応用装置
EP3948920A1 (en) * 2019-03-27 2022-02-09 ASML Netherlands B.V. System and method for alignment of secondary beams in multi-beam inspection apparatus
US11094501B2 (en) * 2019-11-19 2021-08-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Secondary charged particle imaging system
EP4268257A1 (en) * 2020-12-22 2023-11-01 ASML Netherlands B.V. Electron optical column and method for directing a beam of primary electrons onto a sample
EP4530236A1 (en) 2023-09-28 2025-04-02 Canon Kabushiki Kaisha A print substrate stack handling module for stacking and/or separating substrates

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4703276A (en) * 1985-04-24 1987-10-27 Elscint Ltd. Permanent magnet ring assembly for NMR imaging system and method for using such assembly
US4743756A (en) * 1987-08-10 1988-05-10 Gatan Inc. Parallel-detection electron energy-loss spectrometer
KR920003789B1 (ko) * 1988-02-08 1992-05-14 니뽄 덴신 덴와 가부시끼가이샤 플라즈마 스퍼터링을 이용한 박막 형성 장치 및 이온원
DE4216730C2 (de) * 1992-05-20 2003-07-24 Advantest Corp Rasterelektronenstrahlgerät
US5378898A (en) * 1992-09-08 1995-01-03 Zapit Technology, Inc. Electron beam system
US5415754A (en) * 1993-10-22 1995-05-16 Sierra Applied Sciences, Inc. Method and apparatus for sputtering magnetic target materials
DE69920182T2 (de) * 1998-12-17 2005-02-17 Fei Co., Hillsboro Korpuskularstrahloptisches gerät mit auger-elektronendetektion
US6476545B1 (en) * 1999-04-30 2002-11-05 Sarnoff Corporation Asymmetric, gradient-potential, space-savings cathode ray tube
EP1235251B1 (en) * 1999-10-29 2011-02-16 Hitachi, Ltd. Electron beam apparatus
US6710524B2 (en) * 2000-04-11 2004-03-23 Satis Vacuum Industries Vertrieb Ag Plasma source
US6847168B1 (en) * 2000-08-01 2005-01-25 Calabazas Creek Research, Inc. Electron gun for a multiple beam klystron using magnetic focusing with a magnetic field corrector
AU2002232395A1 (en) * 2000-11-03 2002-05-15 Tokyo Electron Limited Hall effect ion source at high current density
DE10061798A1 (de) * 2000-12-12 2002-06-13 Leo Elektronenmikroskopie Gmbh Monochromator für geladene Teilchen
JPWO2002056332A1 (ja) * 2001-01-10 2004-05-20 株式会社荏原製作所 電子線による検査装置、検査方法、及びその検査装置を用いたデバイス製造方法
DE10122957B4 (de) * 2001-05-11 2005-06-02 Akt Electron Beam Technology Gmbh Teilchenstrahlapparat mit energiekorrigierter Strahlablenkung sowie Vorrichtungund Verfahren zur energiekorrigierten Ablenkung eines Teilchenstrahls
JP2003187730A (ja) * 2001-12-13 2003-07-04 Jeol Ltd ビームセパレータ及び反射電子顕微鏡
JP3968334B2 (ja) * 2002-09-11 2007-08-29 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び荷電粒子線照射方法
JP3867048B2 (ja) * 2003-01-08 2007-01-10 株式会社日立ハイテクノロジーズ モノクロメータ及びそれを用いた走査電子顕微鏡
US7570142B2 (en) * 2003-02-27 2009-08-04 Hitachi Metals, Ltd. Permanent magnet for particle beam accelerator and magnetic field generator
JP2004342341A (ja) * 2003-05-13 2004-12-02 Hitachi High-Technologies Corp ミラー電子顕微鏡及びそれを用いたパターン欠陥検査装置
EP1489641B1 (en) * 2003-06-18 2019-08-14 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle deflecting system
EP1657736B1 (en) 2004-11-15 2016-12-14 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH High current density particle beam system
US7164139B1 (en) * 2005-02-01 2007-01-16 Kla-Tencor Technologies Corporation Wien filter with reduced chromatic aberration
KR101377106B1 (ko) * 2005-02-17 2014-03-25 가부시키가이샤 에바라 세이사꾸쇼 전자선장치
TW200703409A (en) * 2005-03-03 2007-01-16 Ebara Corp Mapping projection type electron beam apparatus and defects inspection system using such apparatus
US20060232369A1 (en) * 2005-04-14 2006-10-19 Makrochem, Ltd. Permanent magnet structure with axial access for spectroscopy applications
US8067732B2 (en) * 2005-07-26 2011-11-29 Ebara Corporation Electron beam apparatus
WO2007077890A1 (ja) * 2005-12-28 2007-07-12 Takashi Suzuki スピン分離装置、スピン非対称物質の製造方法、電流源及び信号処理方法
JP4685637B2 (ja) * 2006-01-05 2011-05-18 株式会社日立ハイテクノロジーズ モノクロメータを備えた走査電子顕微鏡
US7348566B2 (en) * 2006-02-28 2008-03-25 International Business Machines Corporation Aberration-correcting cathode lens microscopy instrument
US7453062B2 (en) * 2006-02-28 2008-11-18 International Business Machines Corporation Energy-filtering cathode lens microscopy instrument
CN101461026B (zh) * 2006-06-07 2012-01-18 Fei公司 与包含真空室的装置一起使用的滑动轴承
WO2008101714A2 (en) * 2007-02-22 2008-08-28 Applied Materials Israel, Ltd. High throughput sem tool
EP2132763B1 (en) * 2007-02-22 2014-05-07 Applied Materials Israel Ltd. High throughput sem tool
US7932495B2 (en) * 2008-09-02 2011-04-26 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Fast wafer inspection system
JP5702552B2 (ja) * 2009-05-28 2015-04-15 エフ イー アイ カンパニFei Company デュアルビームシステムの制御方法

Also Published As

Publication number Publication date
TW201214497A (en) 2012-04-01
US20110272577A1 (en) 2011-11-10
KR101556236B1 (ko) 2015-09-30
EP2385542A1 (en) 2011-11-09
EP2385542B1 (en) 2013-01-02
KR20110123679A (ko) 2011-11-15
JP2011238612A (ja) 2011-11-24
US9048068B2 (en) 2015-06-02
TWI488209B (zh) 2015-06-11

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