TWI488209B - 具有色散補償的電子光束裝置，及其操作方法 - Google Patents
具有色散補償的電子光束裝置，及其操作方法 Download PDFInfo
- Publication number
- TWI488209B TWI488209B TW100112073A TW100112073A TWI488209B TW I488209 B TWI488209 B TW I488209B TW 100112073 A TW100112073 A TW 100112073A TW 100112073 A TW100112073 A TW 100112073A TW I488209 B TWI488209 B TW I488209B
- Authority
- TW
- Taiwan
- Prior art keywords
- dispersion
- electron beam
- primary
- deflector
- compensating element
- Prior art date
Links
- 239000006185 dispersion Substances 0.000 title claims description 235
- 238000010894 electron beam technology Methods 0.000 title claims description 165
- 238000000034 method Methods 0.000 title claims description 14
- 230000003287 optical effect Effects 0.000 claims description 36
- 238000011144 upstream manufacturing Methods 0.000 claims description 28
- 230000003993 interaction Effects 0.000 description 13
- 230000000694 effects Effects 0.000 description 10
- 230000004075 alteration Effects 0.000 description 8
- 239000002245 particle Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/152—Magnetic means
- H01J2237/1523—Prisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/153—Correcting image defects, e.g. stigmators
- H01J2237/1534—Aberrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Electron Beam Exposure (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP20100162334 EP2385542B1 (en) | 2010-05-07 | 2010-05-07 | Electron beam device with dispersion compensation, and method of operating same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201214497A TW201214497A (en) | 2012-04-01 |
| TWI488209B true TWI488209B (zh) | 2015-06-11 |
Family
ID=42647329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100112073A TWI488209B (zh) | 2010-05-07 | 2011-04-07 | 具有色散補償的電子光束裝置，及其操作方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9048068B2 (enExample) |
| EP (1) | EP2385542B1 (enExample) |
| JP (1) | JP5637929B2 (enExample) |
| KR (1) | KR101556236B1 (enExample) |
| TW (1) | TWI488209B (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5386544B2 (ja) * | 2011-06-07 | 2014-01-15 | 株式会社アドバンテスト | 電子ビーム露光装置及び電子ビーム露光方法 |
| JP6037693B2 (ja) * | 2012-07-23 | 2016-12-07 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| EP2779204A1 (en) * | 2013-03-15 | 2014-09-17 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Electron gun arrangement |
| US9330884B1 (en) * | 2014-11-11 | 2016-05-03 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Dome detection for charged particle beam device |
| US9805908B2 (en) * | 2015-02-18 | 2017-10-31 | Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Signal charged particle deflection device, signal charged particle detection system, charged particle beam device and method of detection of a signal charged particle beam |
| KR20190091577A (ko) * | 2015-07-22 | 2019-08-06 | 에이에스엠엘 네델란즈 비.브이. | 복수의 하전 입자 빔을 이용하는 장치 |
| EP3203493B1 (en) * | 2016-02-02 | 2018-10-03 | FEI Company | Charged-particle microscope with astigmatism compensation and energy-selection |
| US10090131B2 (en) * | 2016-12-07 | 2018-10-02 | Kla-Tencor Corporation | Method and system for aberration correction in an electron beam system |
| JP7135009B2 (ja) * | 2017-07-28 | 2022-09-12 | エーエスエムエル ネザーランズ ビー．ブイ． | マルチビーム装置におけるビームセパレータの分散を補償するためのシステム及び方法 |
| US10504687B2 (en) * | 2018-02-20 | 2019-12-10 | Technische Universiteit Delft | Signal separator for a multi-beam charged particle inspection apparatus |
| JP6919063B2 (ja) * | 2018-03-30 | 2021-08-11 | 株式会社日立ハイテク | 荷電粒子線応用装置 |
| EP3948920A1 (en) * | 2019-03-27 | 2022-02-09 | ASML Netherlands B.V. | System and method for alignment of secondary beams in multi-beam inspection apparatus |
| US11094501B2 (en) * | 2019-11-19 | 2021-08-17 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Secondary charged particle imaging system |
| EP4268257A1 (en) * | 2020-12-22 | 2023-11-01 | ASML Netherlands B.V. | Electron optical column and method for directing a beam of primary electrons onto a sample |
| EP4530236A1 (en) | 2023-09-28 | 2025-04-02 | Canon Kabushiki Kaisha | A print substrate stack handling module for stacking and/or separating substrates |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5422486A (en) * | 1992-05-20 | 1995-06-06 | Ict Integrated Circuit Testing Gesellschaft, Fur Halbleiterpruftechnik Mbh | Scanning electron beam device |
| US20040227081A1 (en) * | 1999-10-29 | 2004-11-18 | Mitsugu Sato | Electron beam apparatus |
| JP2004342341A (ja) * | 2003-05-13 | 2004-12-02 | Hitachi High-Technologies Corp | ミラー電子顕微鏡及びそれを用いたパターン欠陥検査装置 |
| TW200636232A (en) * | 2005-02-17 | 2006-10-16 | Ebara Corp | Electron beam device |
| US20090212213A1 (en) * | 2005-03-03 | 2009-08-27 | Ebara Corporation | Projection electron beam apparatus and defect inspection system using the apparatus |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4703276A (en) * | 1985-04-24 | 1987-10-27 | Elscint Ltd. | Permanent magnet ring assembly for NMR imaging system and method for using such assembly |
| US4743756A (en) * | 1987-08-10 | 1988-05-10 | Gatan Inc. | Parallel-detection electron energy-loss spectrometer |
| KR920003789B1 (ko) * | 1988-02-08 | 1992-05-14 | 니뽄 덴신 덴와 가부시끼가이샤 | 플라즈마 스퍼터링을 이용한 박막 형성 장치 및 이온원 |
| US5378898A (en) * | 1992-09-08 | 1995-01-03 | Zapit Technology, Inc. | Electron beam system |
| US5415754A (en) * | 1993-10-22 | 1995-05-16 | Sierra Applied Sciences, Inc. | Method and apparatus for sputtering magnetic target materials |
| DE69920182T2 (de) * | 1998-12-17 | 2005-02-17 | Fei Co., Hillsboro | Korpuskularstrahloptisches gerät mit auger-elektronendetektion |
| US6476545B1 (en) * | 1999-04-30 | 2002-11-05 | Sarnoff Corporation | Asymmetric, gradient-potential, space-savings cathode ray tube |
| US6710524B2 (en) * | 2000-04-11 | 2004-03-23 | Satis Vacuum Industries Vertrieb Ag | Plasma source |
| US6847168B1 (en) * | 2000-08-01 | 2005-01-25 | Calabazas Creek Research, Inc. | Electron gun for a multiple beam klystron using magnetic focusing with a magnetic field corrector |
| AU2002232395A1 (en) * | 2000-11-03 | 2002-05-15 | Tokyo Electron Limited | Hall effect ion source at high current density |
| DE10061798A1 (de) * | 2000-12-12 | 2002-06-13 | Leo Elektronenmikroskopie Gmbh | Monochromator für geladene Teilchen |
| JPWO2002056332A1 (ja) * | 2001-01-10 | 2004-05-20 | 株式会社荏原製作所 | 電子線による検査装置、検査方法、及びその検査装置を用いたデバイス製造方法 |
| DE10122957B4 (de) * | 2001-05-11 | 2005-06-02 | Akt Electron Beam Technology Gmbh | Teilchenstrahlapparat mit energiekorrigierter Strahlablenkung sowie Vorrichtungund Verfahren zur energiekorrigierten Ablenkung eines Teilchenstrahls |
| JP2003187730A (ja) * | 2001-12-13 | 2003-07-04 | Jeol Ltd | ビームセパレータ及び反射電子顕微鏡 |
| JP3968334B2 (ja) * | 2002-09-11 | 2007-08-29 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置及び荷電粒子線照射方法 |
| JP3867048B2 (ja) * | 2003-01-08 | 2007-01-10 | 株式会社日立ハイテクノロジーズ | モノクロメータ及びそれを用いた走査電子顕微鏡 |
| US7570142B2 (en) * | 2003-02-27 | 2009-08-04 | Hitachi Metals, Ltd. | Permanent magnet for particle beam accelerator and magnetic field generator |
| EP1489641B1 (en) * | 2003-06-18 | 2019-08-14 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle deflecting system |
| EP1657736B1 (en) | 2004-11-15 | 2016-12-14 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | High current density particle beam system |
| US7164139B1 (en) * | 2005-02-01 | 2007-01-16 | Kla-Tencor Technologies Corporation | Wien filter with reduced chromatic aberration |
| US20060232369A1 (en) * | 2005-04-14 | 2006-10-19 | Makrochem, Ltd. | Permanent magnet structure with axial access for spectroscopy applications |
| US8067732B2 (en) * | 2005-07-26 | 2011-11-29 | Ebara Corporation | Electron beam apparatus |
| WO2007077890A1 (ja) * | 2005-12-28 | 2007-07-12 | Takashi Suzuki | スピン分離装置、スピン非対称物質の製造方法、電流源及び信号処理方法 |
| JP4685637B2 (ja) * | 2006-01-05 | 2011-05-18 | 株式会社日立ハイテクノロジーズ | モノクロメータを備えた走査電子顕微鏡 |
| US7348566B2 (en) * | 2006-02-28 | 2008-03-25 | International Business Machines Corporation | Aberration-correcting cathode lens microscopy instrument |
| US7453062B2 (en) * | 2006-02-28 | 2008-11-18 | International Business Machines Corporation | Energy-filtering cathode lens microscopy instrument |
| CN101461026B (zh) * | 2006-06-07 | 2012-01-18 | Fei公司 | 与包含真空室的装置一起使用的滑动轴承 |
| WO2008101714A2 (en) * | 2007-02-22 | 2008-08-28 | Applied Materials Israel, Ltd. | High throughput sem tool |
| EP2132763B1 (en) * | 2007-02-22 | 2014-05-07 | Applied Materials Israel Ltd. | High throughput sem tool |
| US7932495B2 (en) * | 2008-09-02 | 2011-04-26 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Fast wafer inspection system |
| JP5702552B2 (ja) * | 2009-05-28 | 2015-04-15 | エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ | デュアルビームシステムの制御方法 |
-
2010
- 2010-05-07 EP EP20100162334 patent/EP2385542B1/en active Active
- 2010-05-10 US US12/776,980 patent/US9048068B2/en active Active
-
2011
- 2011-04-07 TW TW100112073A patent/TWI488209B/zh active
- 2011-05-02 JP JP2011102799A patent/JP5637929B2/ja not_active Expired - Fee Related
- 2011-05-04 KR KR1020110042489A patent/KR101556236B1/ko active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5422486A (en) * | 1992-05-20 | 1995-06-06 | Ict Integrated Circuit Testing Gesellschaft, Fur Halbleiterpruftechnik Mbh | Scanning electron beam device |
| US20040227081A1 (en) * | 1999-10-29 | 2004-11-18 | Mitsugu Sato | Electron beam apparatus |
| JP2004342341A (ja) * | 2003-05-13 | 2004-12-02 | Hitachi High-Technologies Corp | ミラー電子顕微鏡及びそれを用いたパターン欠陥検査装置 |
| TW200636232A (en) * | 2005-02-17 | 2006-10-16 | Ebara Corp | Electron beam device |
| US20090212213A1 (en) * | 2005-03-03 | 2009-08-27 | Ebara Corporation | Projection electron beam apparatus and defect inspection system using the apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201214497A (en) | 2012-04-01 |
| US20110272577A1 (en) | 2011-11-10 |
| KR101556236B1 (ko) | 2015-09-30 |
| EP2385542A1 (en) | 2011-11-09 |
| EP2385542B1 (en) | 2013-01-02 |
| KR20110123679A (ko) | 2011-11-15 |
| JP2011238612A (ja) | 2011-11-24 |
| US9048068B2 (en) | 2015-06-02 |
| JP5637929B2 (ja) | 2014-12-10 |
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