KR101556236B1 - 분산 보상을 갖는 전자 빔 디바이스, 및 이의 동작 방법 - Google Patents

분산 보상을 갖는 전자 빔 디바이스, 및 이의 동작 방법 Download PDF

Info

Publication number
KR101556236B1
KR101556236B1 KR1020110042489A KR20110042489A KR101556236B1 KR 101556236 B1 KR101556236 B1 KR 101556236B1 KR 1020110042489 A KR1020110042489 A KR 1020110042489A KR 20110042489 A KR20110042489 A KR 20110042489A KR 101556236 B1 KR101556236 B1 KR 101556236B1
Authority
KR
South Korea
Prior art keywords
dispersion
electron beam
primary
electron
compensating element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020110042489A
Other languages
English (en)
Korean (ko)
Other versions
KR20110123679A (ko
Inventor
슈테판 라니오
제랄드 쇄네커
Original Assignee
아이씨티 인티그레이티드 써킷 테스팅 게젤샤프트 퓌어 할프라이터프뤼프테크닉 엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아이씨티 인티그레이티드 써킷 테스팅 게젤샤프트 퓌어 할프라이터프뤼프테크닉 엠베하 filed Critical 아이씨티 인티그레이티드 써킷 테스팅 게젤샤프트 퓌어 할프라이터프뤼프테크닉 엠베하
Publication of KR20110123679A publication Critical patent/KR20110123679A/ko
Application granted granted Critical
Publication of KR101556236B1 publication Critical patent/KR101556236B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/152—Magnetic means
    • H01J2237/1523—Prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
KR1020110042489A 2010-05-07 2011-05-04 분산 보상을 갖는 전자 빔 디바이스, 및 이의 동작 방법 Active KR101556236B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP10162334.6 2010-05-07
EP20100162334 EP2385542B1 (en) 2010-05-07 2010-05-07 Electron beam device with dispersion compensation, and method of operating same

Publications (2)

Publication Number Publication Date
KR20110123679A KR20110123679A (ko) 2011-11-15
KR101556236B1 true KR101556236B1 (ko) 2015-09-30

Family

ID=42647329

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110042489A Active KR101556236B1 (ko) 2010-05-07 2011-05-04 분산 보상을 갖는 전자 빔 디바이스, 및 이의 동작 방법

Country Status (5)

Country Link
US (1) US9048068B2 (enExample)
EP (1) EP2385542B1 (enExample)
JP (1) JP5637929B2 (enExample)
KR (1) KR101556236B1 (enExample)
TW (1) TWI488209B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5386544B2 (ja) * 2011-06-07 2014-01-15 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム露光方法
JP6037693B2 (ja) * 2012-07-23 2016-12-07 株式会社日立ハイテクノロジーズ 荷電粒子線装置
EP2779204A1 (en) * 2013-03-15 2014-09-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Electron gun arrangement
US9330884B1 (en) * 2014-11-11 2016-05-03 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Dome detection for charged particle beam device
US9805908B2 (en) * 2015-02-18 2017-10-31 Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Signal charged particle deflection device, signal charged particle detection system, charged particle beam device and method of detection of a signal charged particle beam
KR20190091577A (ko) * 2015-07-22 2019-08-06 에이에스엠엘 네델란즈 비.브이. 복수의 하전 입자 빔을 이용하는 장치
EP3203493B1 (en) * 2016-02-02 2018-10-03 FEI Company Charged-particle microscope with astigmatism compensation and energy-selection
US10090131B2 (en) * 2016-12-07 2018-10-02 Kla-Tencor Corporation Method and system for aberration correction in an electron beam system
JP7135009B2 (ja) * 2017-07-28 2022-09-12 エーエスエムエル ネザーランズ ビー．ブイ． マルチビーム装置におけるビームセパレータの分散を補償するためのシステム及び方法
US10504687B2 (en) * 2018-02-20 2019-12-10 Technische Universiteit Delft Signal separator for a multi-beam charged particle inspection apparatus
JP6919063B2 (ja) * 2018-03-30 2021-08-11 株式会社日立ハイテク 荷電粒子線応用装置
EP3948920A1 (en) * 2019-03-27 2022-02-09 ASML Netherlands B.V. System and method for alignment of secondary beams in multi-beam inspection apparatus
US11094501B2 (en) * 2019-11-19 2021-08-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Secondary charged particle imaging system
EP4268257A1 (en) * 2020-12-22 2023-11-01 ASML Netherlands B.V. Electron optical column and method for directing a beam of primary electrons onto a sample
EP4530236A1 (en) 2023-09-28 2025-04-02 Canon Kabushiki Kaisha A print substrate stack handling module for stacking and/or separating substrates

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060016992A1 (en) * 1999-10-29 2006-01-26 Mitsugu Sato Electron beam apparatus
US20060118719A1 (en) 2001-01-10 2006-06-08 Ebara Corporation Electron beam inspection system and inspection method and method of manufacturing devices using the system
US20060151711A1 (en) * 2004-11-15 2006-07-13 Juergen Frosien High current density particle beam system
US20090218506A1 (en) * 2005-07-26 2009-09-03 Ebara Corporation Electron beam apparatus

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4703276A (en) * 1985-04-24 1987-10-27 Elscint Ltd. Permanent magnet ring assembly for NMR imaging system and method for using such assembly
US4743756A (en) * 1987-08-10 1988-05-10 Gatan Inc. Parallel-detection electron energy-loss spectrometer
KR920003789B1 (ko) * 1988-02-08 1992-05-14 니뽄 덴신 덴와 가부시끼가이샤 플라즈마 스퍼터링을 이용한 박막 형성 장치 및 이온원
DE4216730C2 (de) * 1992-05-20 2003-07-24 Advantest Corp Rasterelektronenstrahlgerät
US5378898A (en) * 1992-09-08 1995-01-03 Zapit Technology, Inc. Electron beam system
US5415754A (en) * 1993-10-22 1995-05-16 Sierra Applied Sciences, Inc. Method and apparatus for sputtering magnetic target materials
DE69920182T2 (de) * 1998-12-17 2005-02-17 Fei Co., Hillsboro Korpuskularstrahloptisches gerät mit auger-elektronendetektion
US6476545B1 (en) * 1999-04-30 2002-11-05 Sarnoff Corporation Asymmetric, gradient-potential, space-savings cathode ray tube
US6710524B2 (en) * 2000-04-11 2004-03-23 Satis Vacuum Industries Vertrieb Ag Plasma source
US6847168B1 (en) * 2000-08-01 2005-01-25 Calabazas Creek Research, Inc. Electron gun for a multiple beam klystron using magnetic focusing with a magnetic field corrector
AU2002232395A1 (en) * 2000-11-03 2002-05-15 Tokyo Electron Limited Hall effect ion source at high current density
DE10061798A1 (de) * 2000-12-12 2002-06-13 Leo Elektronenmikroskopie Gmbh Monochromator für geladene Teilchen
DE10122957B4 (de) * 2001-05-11 2005-06-02 Akt Electron Beam Technology Gmbh Teilchenstrahlapparat mit energiekorrigierter Strahlablenkung sowie Vorrichtungund Verfahren zur energiekorrigierten Ablenkung eines Teilchenstrahls
JP2003187730A (ja) * 2001-12-13 2003-07-04 Jeol Ltd ビームセパレータ及び反射電子顕微鏡
JP3968334B2 (ja) * 2002-09-11 2007-08-29 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び荷電粒子線照射方法
JP3867048B2 (ja) * 2003-01-08 2007-01-10 株式会社日立ハイテクノロジーズ モノクロメータ及びそれを用いた走査電子顕微鏡
US7570142B2 (en) * 2003-02-27 2009-08-04 Hitachi Metals, Ltd. Permanent magnet for particle beam accelerator and magnetic field generator
JP2004342341A (ja) * 2003-05-13 2004-12-02 Hitachi High-Technologies Corp ミラー電子顕微鏡及びそれを用いたパターン欠陥検査装置
EP1489641B1 (en) * 2003-06-18 2019-08-14 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle deflecting system
US7164139B1 (en) * 2005-02-01 2007-01-16 Kla-Tencor Technologies Corporation Wien filter with reduced chromatic aberration
KR101377106B1 (ko) * 2005-02-17 2014-03-25 가부시키가이샤 에바라 세이사꾸쇼 전자선장치
TW200703409A (en) * 2005-03-03 2007-01-16 Ebara Corp Mapping projection type electron beam apparatus and defects inspection system using such apparatus
US20060232369A1 (en) * 2005-04-14 2006-10-19 Makrochem, Ltd. Permanent magnet structure with axial access for spectroscopy applications
WO2007077890A1 (ja) * 2005-12-28 2007-07-12 Takashi Suzuki スピン分離装置、スピン非対称物質の製造方法、電流源及び信号処理方法
JP4685637B2 (ja) * 2006-01-05 2011-05-18 株式会社日立ハイテクノロジーズ モノクロメータを備えた走査電子顕微鏡
US7348566B2 (en) * 2006-02-28 2008-03-25 International Business Machines Corporation Aberration-correcting cathode lens microscopy instrument
US7453062B2 (en) * 2006-02-28 2008-11-18 International Business Machines Corporation Energy-filtering cathode lens microscopy instrument
CN101461026B (zh) * 2006-06-07 2012-01-18 Fei公司 与包含真空室的装置一起使用的滑动轴承
WO2008101714A2 (en) * 2007-02-22 2008-08-28 Applied Materials Israel, Ltd. High throughput sem tool
EP2132763B1 (en) * 2007-02-22 2014-05-07 Applied Materials Israel Ltd. High throughput sem tool
US7932495B2 (en) * 2008-09-02 2011-04-26 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Fast wafer inspection system
JP5702552B2 (ja) * 2009-05-28 2015-04-15 エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ デュアルビームシステムの制御方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060016992A1 (en) * 1999-10-29 2006-01-26 Mitsugu Sato Electron beam apparatus
US20060118719A1 (en) 2001-01-10 2006-06-08 Ebara Corporation Electron beam inspection system and inspection method and method of manufacturing devices using the system
US20060151711A1 (en) * 2004-11-15 2006-07-13 Juergen Frosien High current density particle beam system
US20090218506A1 (en) * 2005-07-26 2009-09-03 Ebara Corporation Electron beam apparatus

Also Published As

Publication number Publication date
TW201214497A (en) 2012-04-01
US20110272577A1 (en) 2011-11-10
EP2385542A1 (en) 2011-11-09
EP2385542B1 (en) 2013-01-02
KR20110123679A (ko) 2011-11-15
JP2011238612A (ja) 2011-11-24
US9048068B2 (en) 2015-06-02
TWI488209B (zh) 2015-06-11
JP5637929B2 (ja) 2014-12-10

Similar Documents

Publication Publication Date Title
KR101556236B1 (ko) 분산 보상을 갖는 전자 빔 디바이스, 및 이의 동작 방법
US11239053B2 (en) Charged particle beam system and method
NL2029294B1 (en) Multiple particle beam microscope and associated method with fast autofocus around an adjustable working distance
JP6989658B2 (ja) 複数の荷電粒子ビームの装置
US11562880B2 (en) Particle beam system for adjusting the current of individual particle beams
US9953805B2 (en) System for imaging a secondary charged particle beam with adaptive secondary charged particle optics
KR102207766B1 (ko) 이차 전자 광학계 ＆ 검출 디바이스
US20160155603A1 (en) Particle-Optical Systems and Arrangements and Particle-Optical Components for such Systems and Arrangements
CN109427524A (zh) 带电粒子束装置、用于带电粒子束装置的孔布置和用于操作带电粒子束装置的方法
WO2018172186A1 (en) Charged particle beam system and method
TW201833968A (zh) 用於檢查試樣之方法以及帶電粒子多束裝置
NL2031161B1 (en) Multiple particle beam microscope and associated method with fast autofocus with special embodiments
US8866102B2 (en) Electron beam device with tilting and dispersion compensation, and method of operating same
US12494343B2 (en) Multiple particle beam microscope and associated method with fast autofocus around an adjustable working distance
JP4527289B2 (ja) オージェ電子の検出を含む粒子光学装置
KR20230157977A (ko) 플러드 컬럼 및 하전 입자 장치

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20110504

PG1501 Laying open of application
A201 Request for examination
A302 Request for accelerated examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20150327

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20110504

Comment text: Patent Application

PA0302 Request for accelerated examination

Patent event date: 20150327

Patent event code: PA03022R01D

Comment text: Request for Accelerated Examination

Patent event date: 20110504

Patent event code: PA03021R01I

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20150407

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20150706

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20150922

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20150923

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20200901

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20210820

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20220822

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20230828

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20240826

Start annual number: 10

End annual number: 10