JP5631354B2 - 金属酸化物半導体出力回路およびそれを形成する方法 - Google Patents

金属酸化物半導体出力回路およびそれを形成する方法 Download PDF

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JP5631354B2
JP5631354B2 JP2012103853A JP2012103853A JP5631354B2 JP 5631354 B2 JP5631354 B2 JP 5631354B2 JP 2012103853 A JP2012103853 A JP 2012103853A JP 2012103853 A JP2012103853 A JP 2012103853A JP 5631354 B2 JP5631354 B2 JP 5631354B2
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mos transistor
gate
electrically connected
source
drain
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JP2012253326A (ja
JP2012253326A5 (enExample
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ドノバン コルム
ドノバン コルム
アー． サルセド ハビエル
アー． サルセド ハビエル
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アナログ デバイシス， インコーポレイテッド
アナログ デバイシス， インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/819—Bias arrangements for gate electrodes of FETs, e.g. RC networks or voltage partitioning circuits

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
JP2012103853A 2011-06-03 2012-04-27 金属酸化物半導体出力回路およびそれを形成する方法 Active JP5631354B2 (ja)

Applications Claiming Priority (2)

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US13/152,867 2011-06-03
US13/152,867 US8564065B2 (en) 2011-06-03 2011-06-03 Circuit architecture for metal oxide semiconductor (MOS) output driver electrical overstress self-protection

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JP2012253326A JP2012253326A (ja) 2012-12-20
JP2012253326A5 JP2012253326A5 (enExample) 2014-06-26
JP5631354B2 true JP5631354B2 (ja) 2014-11-26

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US (1) US8564065B2 (enExample)
EP (1) EP2530713B1 (enExample)
JP (1) JP5631354B2 (enExample)
CN (1) CN102810539B (enExample)

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US10158029B2 (en) 2016-02-23 2018-12-18 Analog Devices, Inc. Apparatus and methods for robust overstress protection in compound semiconductor circuit applications
US10199369B2 (en) 2016-03-04 2019-02-05 Analog Devices, Inc. Apparatus and methods for actively-controlled transient overstress protection with false condition shutdown
US10177566B2 (en) 2016-06-21 2019-01-08 Analog Devices, Inc. Apparatus and methods for actively-controlled trigger and latch release thyristor
US10734806B2 (en) 2016-07-21 2020-08-04 Analog Devices, Inc. High voltage clamps with transient activation and activation release control
US10861845B2 (en) 2016-12-06 2020-12-08 Analog Devices, Inc. Active interface resistance modulation switch
US10319714B2 (en) 2017-01-24 2019-06-11 Analog Devices, Inc. Drain-extended metal-oxide-semiconductor bipolar switch for electrical overstress protection
US10404059B2 (en) 2017-02-09 2019-09-03 Analog Devices, Inc. Distributed switches to suppress transient electrical overstress-induced latch-up
US10128835B2 (en) * 2017-02-20 2018-11-13 Stmicroelectronics International N.V. Aging tolerant I/O driver
US10608431B2 (en) 2017-10-26 2020-03-31 Analog Devices, Inc. Silicon controlled rectifier dynamic triggering and shutdown via control signal amplification
US10410934B2 (en) * 2017-12-07 2019-09-10 Micron Technology, Inc. Apparatuses having an interconnect extending from an upper conductive structure, through a hole in another conductive structure, and to an underlying structure
US10581423B1 (en) 2018-08-17 2020-03-03 Analog Devices Global Unlimited Company Fault tolerant low leakage switch
US10867104B2 (en) 2018-08-31 2020-12-15 Taiwan Semiconductor Manufacturing Company Ltd. Isolation circuit between power domains
US11387648B2 (en) 2019-01-10 2022-07-12 Analog Devices International Unlimited Company Electrical overstress protection with low leakage current for high voltage tolerant high speed interfaces
US11004849B2 (en) 2019-03-06 2021-05-11 Analog Devices, Inc. Distributed electrical overstress protection for large density and high data rate communication applications
CN111835331B (zh) * 2019-04-16 2024-02-09 中芯国际集成电路制造(上海)有限公司 参考电压驱动器
US11469717B2 (en) 2019-05-03 2022-10-11 Analog Devices International Unlimited Company Microwave amplifiers tolerant to electrical overstress
DE102020111863A1 (de) 2019-05-03 2020-11-05 Analog Devices International Unlimited Company Gegen elektrische Überlastung tolerante Mikrowellenverstärker
US12032014B2 (en) 2019-09-09 2024-07-09 Analog Devices International Unlimited Company Semiconductor device configured for gate dielectric monitoring
DE102020123481A1 (de) 2019-09-09 2021-03-11 Analog Devices International Unlimited Company Halbleitervorrichtung, die zur gate-dielektrikum-überwachung ausgebildet ist
US11552190B2 (en) 2019-12-12 2023-01-10 Analog Devices International Unlimited Company High voltage double-diffused metal oxide semiconductor transistor with isolated parasitic bipolar junction transistor region
US11454668B2 (en) * 2019-12-30 2022-09-27 Taiwan Semiconductor Manufacturing Company, Ltd. Voltage tracking circuit and method of operating the same
US11595036B2 (en) 2020-04-30 2023-02-28 Analog Devices, Inc. FinFET thyristors for protecting high-speed communication interfaces
US11289472B2 (en) 2020-07-30 2022-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit with electrostatic discharge protection
CN113346893B (zh) * 2020-12-24 2022-03-18 澜起电子科技(昆山)有限公司 驱动输出电路、芯片及驱动输出方法
CN113140558A (zh) * 2021-04-28 2021-07-20 上海华虹宏力半导体制造有限公司 一种用于多端口esd保护的器件结构
CN115566015A (zh) * 2021-08-20 2023-01-03 台湾积体电路制造股份有限公司 半导体器件及其制造方法
CN114189136B (zh) * 2021-11-25 2024-02-06 上海华虹宏力半导体制造有限公司 一种放电电路
US11693039B2 (en) * 2021-11-29 2023-07-04 Stmicroelectronics S.R.L. Electrostatic charge sensor with high impedance contact pads
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Also Published As

Publication number Publication date
EP2530713A1 (en) 2012-12-05
EP2530713B1 (en) 2018-10-17
CN102810539B (zh) 2016-03-30
US20120306013A1 (en) 2012-12-06
US8564065B2 (en) 2013-10-22
JP2012253326A (ja) 2012-12-20
CN102810539A (zh) 2012-12-05

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