JP5628507B2 - 試料台及びマイクロ波プラズマ処理装置 - Google Patents

試料台及びマイクロ波プラズマ処理装置 Download PDF

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Publication number
JP5628507B2
JP5628507B2 JP2009241538A JP2009241538A JP5628507B2 JP 5628507 B2 JP5628507 B2 JP 5628507B2 JP 2009241538 A JP2009241538 A JP 2009241538A JP 2009241538 A JP2009241538 A JP 2009241538A JP 5628507 B2 JP5628507 B2 JP 5628507B2
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Japan
Prior art keywords
sample stage
suction plate
concave
substrate
processed
Prior art date
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Active
Application number
JP2009241538A
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English (en)
Japanese (ja)
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JP2011091096A5 (enExample
JP2011091096A (ja
Inventor
弥 ▲吉▼川
弥 ▲吉▼川
和基 茂山
和基 茂山
信幸 岡山
信幸 岡山
賢治 周藤
賢治 周藤
康弘 大塚
康弘 大塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2009241538A priority Critical patent/JP5628507B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020127010099A priority patent/KR101324589B1/ko
Priority to US13/502,829 priority patent/US20120211165A1/en
Priority to PCT/JP2010/066910 priority patent/WO2011048917A1/ja
Priority to CN201080047610.7A priority patent/CN102576673B/zh
Priority to TW099135496A priority patent/TWI459502B/zh
Publication of JP2011091096A publication Critical patent/JP2011091096A/ja
Publication of JP2011091096A5 publication Critical patent/JP2011091096A5/ja
Application granted granted Critical
Publication of JP5628507B2 publication Critical patent/JP5628507B2/ja
Priority to US15/966,506 priority patent/US10896842B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2009241538A 2009-10-20 2009-10-20 試料台及びマイクロ波プラズマ処理装置 Active JP5628507B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2009241538A JP5628507B2 (ja) 2009-10-20 2009-10-20 試料台及びマイクロ波プラズマ処理装置
US13/502,829 US20120211165A1 (en) 2009-10-20 2010-09-29 Sample table and microwave plasma processing apparatus
PCT/JP2010/066910 WO2011048917A1 (ja) 2009-10-20 2010-09-29 試料台及びマイクロ波プラズマ処理装置
CN201080047610.7A CN102576673B (zh) 2009-10-20 2010-09-29 试样台和微波等离子体处理装置
KR1020127010099A KR101324589B1 (ko) 2009-10-20 2010-09-29 시료대 및 마이크로파 플라즈마 처리 장치
TW099135496A TWI459502B (zh) 2009-10-20 2010-10-19 Sample station and microwave plasma processing device
US15/966,506 US10896842B2 (en) 2009-10-20 2018-04-30 Manufacturing method of sample table

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009241538A JP5628507B2 (ja) 2009-10-20 2009-10-20 試料台及びマイクロ波プラズマ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014203863A Division JP5927260B2 (ja) 2014-10-02 2014-10-02 試料台及びマイクロ波プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2011091096A JP2011091096A (ja) 2011-05-06
JP2011091096A5 JP2011091096A5 (enExample) 2012-12-06
JP5628507B2 true JP5628507B2 (ja) 2014-11-19

Family

ID=43900155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009241538A Active JP5628507B2 (ja) 2009-10-20 2009-10-20 試料台及びマイクロ波プラズマ処理装置

Country Status (6)

Country Link
US (1) US20120211165A1 (enExample)
JP (1) JP5628507B2 (enExample)
KR (1) KR101324589B1 (enExample)
CN (1) CN102576673B (enExample)
TW (1) TWI459502B (enExample)
WO (1) WO2011048917A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11205584B2 (en) 2016-10-14 2021-12-21 Ngk Insulators, Ltd. Member for semiconductor manufacturing apparatus and method for producing the same

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6014143B2 (ja) * 2012-08-06 2016-10-25 パイオニア株式会社 ドライエッチング装置およびドライエッチング方法
US10510512B2 (en) * 2018-01-25 2019-12-17 Tokyo Electron Limited Methods and systems for controlling plasma performance
CN110983298A (zh) * 2019-12-24 2020-04-10 中国科学院半导体研究所 一种用于微波等离子体化学气相沉积装置的样品台结构
KR102841826B1 (ko) 2020-12-16 2025-08-04 삼성전자주식회사 플라즈마 프로세싱을 위한 정전 척을 포함하는 반도체 공정 설비
US20250210319A1 (en) * 2023-12-20 2025-06-26 Applied Materials, Inc. Electrode configurations and magnet configurations for processing chambers, and related methods and apparatus, for semiconductor manufacturing

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5886863A (en) * 1995-05-09 1999-03-23 Kyocera Corporation Wafer support member
US5761023A (en) * 1996-04-25 1998-06-02 Applied Materials, Inc. Substrate support with pressure zones having reduced contact area and temperature feedback
US6177023B1 (en) * 1997-07-11 2001-01-23 Applied Komatsu Technology, Inc. Method and apparatus for electrostatically maintaining substrate flatness
US6228438B1 (en) * 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
JP3650025B2 (ja) * 2000-12-04 2005-05-18 シャープ株式会社 プラズマプロセス装置
GB0029570D0 (en) * 2000-12-05 2001-01-17 Trikon Holdings Ltd Electrostatic clamp
JP2004273619A (ja) * 2003-03-06 2004-09-30 Hitachi High-Technologies Corp 真空処理装置用の試料載置装置
JP4409373B2 (ja) * 2004-06-29 2010-02-03 日本碍子株式会社 基板載置装置及び基板温度調整方法
US7525787B2 (en) * 2005-09-30 2009-04-28 Lam Research Corporation Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same
US7651571B2 (en) * 2005-12-22 2010-01-26 Kyocera Corporation Susceptor
US8284538B2 (en) * 2006-08-10 2012-10-09 Tokyo Electron Limited Electrostatic chuck device
US7619870B2 (en) * 2006-08-10 2009-11-17 Tokyo Electron Limited Electrostatic chuck
US20080041312A1 (en) * 2006-08-10 2008-02-21 Shoichiro Matsuyama Stage for plasma processing apparatus, and plasma processing apparatus
JP4943085B2 (ja) * 2006-08-10 2012-05-30 東京エレクトロン株式会社 静電チャック装置及びプラズマ処理装置
JP5029089B2 (ja) * 2007-03-26 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置用の載置台及びプラズマ処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11205584B2 (en) 2016-10-14 2021-12-21 Ngk Insulators, Ltd. Member for semiconductor manufacturing apparatus and method for producing the same

Also Published As

Publication number Publication date
CN102576673B (zh) 2015-08-19
US20120211165A1 (en) 2012-08-23
TW201133699A (en) 2011-10-01
KR101324589B1 (ko) 2013-11-01
WO2011048917A1 (ja) 2011-04-28
CN102576673A (zh) 2012-07-11
TWI459502B (zh) 2014-11-01
JP2011091096A (ja) 2011-05-06
KR20120060889A (ko) 2012-06-12

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