TWI459502B - Sample station and microwave plasma processing device - Google Patents

Sample station and microwave plasma processing device Download PDF

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Publication number
TWI459502B
TWI459502B TW099135496A TW99135496A TWI459502B TW I459502 B TWI459502 B TW I459502B TW 099135496 A TW099135496 A TW 099135496A TW 99135496 A TW99135496 A TW 99135496A TW I459502 B TWI459502 B TW I459502B
Authority
TW
Taiwan
Prior art keywords
substrate
sample stage
adsorption plate
contact
concave surface
Prior art date
Application number
TW099135496A
Other languages
English (en)
Chinese (zh)
Other versions
TW201133699A (en
Inventor
Wataru Yoshikawa
Kazuki Moyama
Nobuyuki Okayama
Kenji Sudou
Yasuhiro Otsuka
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201133699A publication Critical patent/TW201133699A/zh
Application granted granted Critical
Publication of TWI459502B publication Critical patent/TWI459502B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
TW099135496A 2009-10-20 2010-10-19 Sample station and microwave plasma processing device TWI459502B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009241538A JP5628507B2 (ja) 2009-10-20 2009-10-20 試料台及びマイクロ波プラズマ処理装置

Publications (2)

Publication Number Publication Date
TW201133699A TW201133699A (en) 2011-10-01
TWI459502B true TWI459502B (zh) 2014-11-01

Family

ID=43900155

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099135496A TWI459502B (zh) 2009-10-20 2010-10-19 Sample station and microwave plasma processing device

Country Status (6)

Country Link
US (1) US20120211165A1 (enExample)
JP (1) JP5628507B2 (enExample)
KR (1) KR101324589B1 (enExample)
CN (1) CN102576673B (enExample)
TW (1) TWI459502B (enExample)
WO (1) WO2011048917A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6014143B2 (ja) * 2012-08-06 2016-10-25 パイオニア株式会社 ドライエッチング装置およびドライエッチング方法
JP6741548B2 (ja) * 2016-10-14 2020-08-19 日本碍子株式会社 半導体製造装置用部材及びその製法
US10510512B2 (en) * 2018-01-25 2019-12-17 Tokyo Electron Limited Methods and systems for controlling plasma performance
CN110983298A (zh) * 2019-12-24 2020-04-10 中国科学院半导体研究所 一种用于微波等离子体化学气相沉积装置的样品台结构
KR102841826B1 (ko) 2020-12-16 2025-08-04 삼성전자주식회사 플라즈마 프로세싱을 위한 정전 척을 포함하는 반도체 공정 설비
US20250210319A1 (en) * 2023-12-20 2025-06-26 Applied Materials, Inc. Electrode configurations and magnet configurations for processing chambers, and related methods and apparatus, for semiconductor manufacturing

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6228438B1 (en) * 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
US20060021705A1 (en) * 2004-06-29 2006-02-02 Ngk Insulators, Ltd. Substrate mounting apparatus and control method of substrate temperature
US20080037195A1 (en) * 2006-08-10 2008-02-14 Shinji Himori Electrostatic chuck
JP2008243973A (ja) * 2007-03-26 2008-10-09 Tokyo Electron Ltd プラズマ処理装置用の載置台及びプラズマ処理装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5886863A (en) * 1995-05-09 1999-03-23 Kyocera Corporation Wafer support member
US5761023A (en) * 1996-04-25 1998-06-02 Applied Materials, Inc. Substrate support with pressure zones having reduced contact area and temperature feedback
US6177023B1 (en) * 1997-07-11 2001-01-23 Applied Komatsu Technology, Inc. Method and apparatus for electrostatically maintaining substrate flatness
JP3650025B2 (ja) * 2000-12-04 2005-05-18 シャープ株式会社 プラズマプロセス装置
GB0029570D0 (en) * 2000-12-05 2001-01-17 Trikon Holdings Ltd Electrostatic clamp
JP2004273619A (ja) * 2003-03-06 2004-09-30 Hitachi High-Technologies Corp 真空処理装置用の試料載置装置
US7525787B2 (en) * 2005-09-30 2009-04-28 Lam Research Corporation Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same
US7651571B2 (en) * 2005-12-22 2010-01-26 Kyocera Corporation Susceptor
US8284538B2 (en) * 2006-08-10 2012-10-09 Tokyo Electron Limited Electrostatic chuck device
US20080041312A1 (en) * 2006-08-10 2008-02-21 Shoichiro Matsuyama Stage for plasma processing apparatus, and plasma processing apparatus
JP4943085B2 (ja) * 2006-08-10 2012-05-30 東京エレクトロン株式会社 静電チャック装置及びプラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6228438B1 (en) * 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
US20060021705A1 (en) * 2004-06-29 2006-02-02 Ngk Insulators, Ltd. Substrate mounting apparatus and control method of substrate temperature
US20080037195A1 (en) * 2006-08-10 2008-02-14 Shinji Himori Electrostatic chuck
JP2008243973A (ja) * 2007-03-26 2008-10-09 Tokyo Electron Ltd プラズマ処理装置用の載置台及びプラズマ処理装置

Also Published As

Publication number Publication date
CN102576673B (zh) 2015-08-19
US20120211165A1 (en) 2012-08-23
TW201133699A (en) 2011-10-01
JP5628507B2 (ja) 2014-11-19
KR101324589B1 (ko) 2013-11-01
WO2011048917A1 (ja) 2011-04-28
CN102576673A (zh) 2012-07-11
JP2011091096A (ja) 2011-05-06
KR20120060889A (ko) 2012-06-12

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