KR101324589B1 - 시료대 및 마이크로파 플라즈마 처리 장치 - Google Patents

시료대 및 마이크로파 플라즈마 처리 장치 Download PDF

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Publication number
KR101324589B1
KR101324589B1 KR1020127010099A KR20127010099A KR101324589B1 KR 101324589 B1 KR101324589 B1 KR 101324589B1 KR 1020127010099 A KR1020127010099 A KR 1020127010099A KR 20127010099 A KR20127010099 A KR 20127010099A KR 101324589 B1 KR101324589 B1 KR 101324589B1
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South Korea
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substrate
semiconductor wafer
concave surface
contact surface
support substrate
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English (en)
Korean (ko)
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KR20120060889A (ko
Inventor
와타루 요시카와
카즈키 모야마
노부유키 오카야마
켄지 스도우
야스히로 오츠카
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
KR1020127010099A 2009-10-20 2010-09-29 시료대 및 마이크로파 플라즈마 처리 장치 Active KR101324589B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2009-241538 2009-10-20
JP2009241538A JP5628507B2 (ja) 2009-10-20 2009-10-20 試料台及びマイクロ波プラズマ処理装置
PCT/JP2010/066910 WO2011048917A1 (ja) 2009-10-20 2010-09-29 試料台及びマイクロ波プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20120060889A KR20120060889A (ko) 2012-06-12
KR101324589B1 true KR101324589B1 (ko) 2013-11-01

Family

ID=43900155

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127010099A Active KR101324589B1 (ko) 2009-10-20 2010-09-29 시료대 및 마이크로파 플라즈마 처리 장치

Country Status (6)

Country Link
US (1) US20120211165A1 (enExample)
JP (1) JP5628507B2 (enExample)
KR (1) KR101324589B1 (enExample)
CN (1) CN102576673B (enExample)
TW (1) TWI459502B (enExample)
WO (1) WO2011048917A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6014143B2 (ja) * 2012-08-06 2016-10-25 パイオニア株式会社 ドライエッチング装置およびドライエッチング方法
JP6741548B2 (ja) * 2016-10-14 2020-08-19 日本碍子株式会社 半導体製造装置用部材及びその製法
US10510512B2 (en) * 2018-01-25 2019-12-17 Tokyo Electron Limited Methods and systems for controlling plasma performance
CN110983298A (zh) * 2019-12-24 2020-04-10 中国科学院半导体研究所 一种用于微波等离子体化学气相沉积装置的样品台结构
KR102841826B1 (ko) 2020-12-16 2025-08-04 삼성전자주식회사 플라즈마 프로세싱을 위한 정전 척을 포함하는 반도체 공정 설비
US20250210319A1 (en) * 2023-12-20 2025-06-26 Applied Materials, Inc. Electrode configurations and magnet configurations for processing chambers, and related methods and apparatus, for semiconductor manufacturing

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004273619A (ja) * 2003-03-06 2004-09-30 Hitachi High-Technologies Corp 真空処理装置用の試料載置装置
JP2006013302A (ja) * 2004-06-29 2006-01-12 Ngk Insulators Ltd 基板載置装置及び基板温度調整方法
JP2009510774A (ja) * 2005-09-30 2009-03-12 ラム リサーチ コーポレーション 変化する厚さ、プロファルおよび／または形状を有する誘電材料および／または空洞を備える静電チャックアセンブリ、その使用方法、ならびにそれを組み込む装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5886863A (en) * 1995-05-09 1999-03-23 Kyocera Corporation Wafer support member
US5761023A (en) * 1996-04-25 1998-06-02 Applied Materials, Inc. Substrate support with pressure zones having reduced contact area and temperature feedback
US6177023B1 (en) * 1997-07-11 2001-01-23 Applied Komatsu Technology, Inc. Method and apparatus for electrostatically maintaining substrate flatness
US6228438B1 (en) * 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
JP3650025B2 (ja) * 2000-12-04 2005-05-18 シャープ株式会社 プラズマプロセス装置
GB0029570D0 (en) * 2000-12-05 2001-01-17 Trikon Holdings Ltd Electrostatic clamp
US7651571B2 (en) * 2005-12-22 2010-01-26 Kyocera Corporation Susceptor
US8284538B2 (en) * 2006-08-10 2012-10-09 Tokyo Electron Limited Electrostatic chuck device
US7619870B2 (en) * 2006-08-10 2009-11-17 Tokyo Electron Limited Electrostatic chuck
US20080041312A1 (en) * 2006-08-10 2008-02-21 Shoichiro Matsuyama Stage for plasma processing apparatus, and plasma processing apparatus
JP4943085B2 (ja) * 2006-08-10 2012-05-30 東京エレクトロン株式会社 静電チャック装置及びプラズマ処理装置
JP5029089B2 (ja) * 2007-03-26 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置用の載置台及びプラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004273619A (ja) * 2003-03-06 2004-09-30 Hitachi High-Technologies Corp 真空処理装置用の試料載置装置
JP2006013302A (ja) * 2004-06-29 2006-01-12 Ngk Insulators Ltd 基板載置装置及び基板温度調整方法
JP2009510774A (ja) * 2005-09-30 2009-03-12 ラム リサーチ コーポレーション 変化する厚さ、プロファルおよび／または形状を有する誘電材料および／または空洞を備える静電チャックアセンブリ、その使用方法、ならびにそれを組み込む装置

Also Published As

Publication number Publication date
CN102576673B (zh) 2015-08-19
US20120211165A1 (en) 2012-08-23
TW201133699A (en) 2011-10-01
JP5628507B2 (ja) 2014-11-19
WO2011048917A1 (ja) 2011-04-28
CN102576673A (zh) 2012-07-11
TWI459502B (zh) 2014-11-01
JP2011091096A (ja) 2011-05-06
KR20120060889A (ko) 2012-06-12

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