CN102576673B - 试样台和微波等离子体处理装置 - Google Patents

试样台和微波等离子体处理装置 Download PDF

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Publication number
CN102576673B
CN102576673B CN201080047610.7A CN201080047610A CN102576673B CN 102576673 B CN102576673 B CN 102576673B CN 201080047610 A CN201080047610 A CN 201080047610A CN 102576673 B CN102576673 B CN 102576673B
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China
Prior art keywords
sample stage
substrate
adsorption plate
contact
concave surface
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Active
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CN201080047610.7A
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English (en)
Chinese (zh)
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CN102576673A (zh
Inventor
吉川弥
茂山和基
冈山信幸
周藤贤治
大塚康弘
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
CN201080047610.7A 2009-10-20 2010-09-29 试样台和微波等离子体处理装置 Active CN102576673B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009241538A JP5628507B2 (ja) 2009-10-20 2009-10-20 試料台及びマイクロ波プラズマ処理装置
JP2009-241538 2009-10-20
PCT/JP2010/066910 WO2011048917A1 (ja) 2009-10-20 2010-09-29 試料台及びマイクロ波プラズマ処理装置

Publications (2)

Publication Number Publication Date
CN102576673A CN102576673A (zh) 2012-07-11
CN102576673B true CN102576673B (zh) 2015-08-19

Family

ID=43900155

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080047610.7A Active CN102576673B (zh) 2009-10-20 2010-09-29 试样台和微波等离子体处理装置

Country Status (6)

Country Link
US (1) US20120211165A1 (enExample)
JP (1) JP5628507B2 (enExample)
KR (1) KR101324589B1 (enExample)
CN (1) CN102576673B (enExample)
TW (1) TWI459502B (enExample)
WO (1) WO2011048917A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6014143B2 (ja) * 2012-08-06 2016-10-25 パイオニア株式会社 ドライエッチング装置およびドライエッチング方法
JP6741548B2 (ja) * 2016-10-14 2020-08-19 日本碍子株式会社 半導体製造装置用部材及びその製法
US10510512B2 (en) * 2018-01-25 2019-12-17 Tokyo Electron Limited Methods and systems for controlling plasma performance
CN110983298A (zh) * 2019-12-24 2020-04-10 中国科学院半导体研究所 一种用于微波等离子体化学气相沉积装置的样品台结构
KR102841826B1 (ko) 2020-12-16 2025-08-04 삼성전자주식회사 플라즈마 프로세싱을 위한 정전 척을 포함하는 반도체 공정 설비
US20250210319A1 (en) * 2023-12-20 2025-06-26 Applied Materials, Inc. Electrode configurations and magnet configurations for processing chambers, and related methods and apparatus, for semiconductor manufacturing

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1363718A (zh) * 2000-12-04 2002-08-14 夏普株式会社 等离子体加工设备
JP2004273619A (ja) * 2003-03-06 2004-09-30 Hitachi High-Technologies Corp 真空処理装置用の試料載置装置
US20060021705A1 (en) * 2004-06-29 2006-02-02 Ngk Insulators, Ltd. Substrate mounting apparatus and control method of substrate temperature
CN101278368A (zh) * 2005-09-30 2008-10-01 朗姆研究公司 具有变化厚度、轮廓和/或形状的介电材料和/或空腔的静电卡盘组件、其使用方法及结合有其的装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5886863A (en) * 1995-05-09 1999-03-23 Kyocera Corporation Wafer support member
US5761023A (en) * 1996-04-25 1998-06-02 Applied Materials, Inc. Substrate support with pressure zones having reduced contact area and temperature feedback
US6177023B1 (en) * 1997-07-11 2001-01-23 Applied Komatsu Technology, Inc. Method and apparatus for electrostatically maintaining substrate flatness
US6228438B1 (en) * 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
GB0029570D0 (en) * 2000-12-05 2001-01-17 Trikon Holdings Ltd Electrostatic clamp
US7651571B2 (en) * 2005-12-22 2010-01-26 Kyocera Corporation Susceptor
US8284538B2 (en) * 2006-08-10 2012-10-09 Tokyo Electron Limited Electrostatic chuck device
US7619870B2 (en) * 2006-08-10 2009-11-17 Tokyo Electron Limited Electrostatic chuck
US20080041312A1 (en) * 2006-08-10 2008-02-21 Shoichiro Matsuyama Stage for plasma processing apparatus, and plasma processing apparatus
JP4943085B2 (ja) * 2006-08-10 2012-05-30 東京エレクトロン株式会社 静電チャック装置及びプラズマ処理装置
JP5029089B2 (ja) * 2007-03-26 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置用の載置台及びプラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1363718A (zh) * 2000-12-04 2002-08-14 夏普株式会社 等离子体加工设备
JP2004273619A (ja) * 2003-03-06 2004-09-30 Hitachi High-Technologies Corp 真空処理装置用の試料載置装置
US20060021705A1 (en) * 2004-06-29 2006-02-02 Ngk Insulators, Ltd. Substrate mounting apparatus and control method of substrate temperature
CN101278368A (zh) * 2005-09-30 2008-10-01 朗姆研究公司 具有变化厚度、轮廓和/或形状的介电材料和/或空腔的静电卡盘组件、其使用方法及结合有其的装置

Also Published As

Publication number Publication date
US20120211165A1 (en) 2012-08-23
TW201133699A (en) 2011-10-01
JP5628507B2 (ja) 2014-11-19
KR101324589B1 (ko) 2013-11-01
WO2011048917A1 (ja) 2011-04-28
CN102576673A (zh) 2012-07-11
TWI459502B (zh) 2014-11-01
JP2011091096A (ja) 2011-05-06
KR20120060889A (ko) 2012-06-12

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