JP5626339B2 - ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法 - Google Patents

ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法 Download PDF

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Publication number
JP5626339B2
JP5626339B2 JP2012511721A JP2012511721A JP5626339B2 JP 5626339 B2 JP5626339 B2 JP 5626339B2 JP 2012511721 A JP2012511721 A JP 2012511721A JP 2012511721 A JP2012511721 A JP 2012511721A JP 5626339 B2 JP5626339 B2 JP 5626339B2
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Japan
Prior art keywords
diffusion layer
type diffusion
forming composition
layer forming
glass
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Expired - Fee Related
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JP2012511721A
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English (en)
Japanese (ja)
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JPWO2011132779A1 (ja
Inventor
修一郎 足立
修一郎 足立
吉田　誠人
誠人 吉田
野尻　剛
剛 野尻
香 岡庭
香 岡庭
洋一 町井
洋一 町井
岩室　光則
光則 岩室
鉄也 佐藤
鉄也 佐藤
木沢　桂子
桂子 木沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
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Priority to JP2012511721A priority Critical patent/JP5626339B2/ja
Publication of JPWO2011132779A1 publication Critical patent/JPWO2011132779A1/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
JP2012511721A 2010-04-23 2011-04-22 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法 Expired - Fee Related JP5626339B2 (ja)

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JP2012511721A JP5626339B2 (ja) 2010-04-23 2011-04-22 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法

Applications Claiming Priority (4)

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JP2010100224 2010-04-23
JP2010100224 2010-04-23
PCT/JP2011/059971 WO2011132779A1 (ja) 2010-04-23 2011-04-22 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2012511721A JP5626339B2 (ja) 2010-04-23 2011-04-22 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法

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JP5626339B2 true JP5626339B2 (ja) 2014-11-19

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JP2014041961A Expired - Fee Related JP5958485B2 (ja) 2010-04-23 2014-03-04 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法

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JP (2) JP5626339B2 (zh)
KR (2) KR101484833B1 (zh)
CN (1) CN102844841B (zh)
TW (2) TWI499070B (zh)
WO (1) WO2011132779A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103839787A (zh) * 2011-07-05 2014-06-04 日立化成株式会社 n型扩散层形成用组合物、n型扩散层的制造方法以及太阳能电池元件的制造方法
WO2013129002A1 (ja) * 2012-02-29 2013-09-06 日立化成株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
KR20140092489A (ko) * 2012-12-29 2014-07-24 제일모직주식회사 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극
JP2014179360A (ja) * 2013-03-13 2014-09-25 Hitachi Chemical Co Ltd ｎ型拡散層形成組成物、ｎ型拡散層を有する半導体基板の製造方法、及び太陽電池素子の製造方法
JP6379461B2 (ja) * 2013-09-02 2018-08-29 日立化成株式会社 ｐ型拡散層を有するシリコン基板の製造方法、太陽電池素子の製造方法及び太陽電池素子
CN107146757A (zh) * 2016-08-26 2017-09-08 扬州杰盈汽车芯片有限公司 一种喷雾式晶圆附磷工艺

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JP2000294782A (ja) * 1991-08-26 2000-10-20 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2003069056A (ja) * 2001-08-22 2003-03-07 Toyo Aluminium Kk ペースト組成物およびそれを用いた太陽電池
US20090092745A1 (en) * 2007-10-05 2009-04-09 Luca Pavani Dopant material for manufacturing solar cells
WO2009060761A1 (ja) * 2007-11-09 2009-05-14 Nippon Electric Glass Co., Ltd. ドーパントホストおよびその製造方法
JP2009200276A (ja) * 2008-02-22 2009-09-03 Tokyo Ohka Kogyo Co Ltd 電極形成用導電性組成物及び太陽電池の形成方法

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JPH06105696B2 (ja) * 1988-12-15 1994-12-21 シャープ株式会社 半導体装置の製造方法
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JPH04158514A (ja) * 1990-10-22 1992-06-01 Sumitomo Chem Co Ltd 半導体基板への不純物拡散方法
JPH04174517A (ja) * 1990-11-07 1992-06-22 Canon Inc ダイヤモンド半導体の製造方法
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JPS63307719A (ja) * 1987-05-29 1988-12-15 オーエンス−イリノイ・テレビジヨン・プロダクツ・インコーポレーテツド 低温適用のための燐のプラナードーパントソース
JP2000294782A (ja) * 1991-08-26 2000-10-20 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2003069056A (ja) * 2001-08-22 2003-03-07 Toyo Aluminium Kk ペースト組成物およびそれを用いた太陽電池
US20090092745A1 (en) * 2007-10-05 2009-04-09 Luca Pavani Dopant material for manufacturing solar cells
JP2010541282A (ja) * 2007-10-05 2010-12-24 サンパワー コーポレイション 太陽電池の製造に用いられるドーパント材料
WO2009060761A1 (ja) * 2007-11-09 2009-05-14 Nippon Electric Glass Co., Ltd. ドーパントホストおよびその製造方法
JP2009200276A (ja) * 2008-02-22 2009-09-03 Tokyo Ohka Kogyo Co Ltd 電極形成用導電性組成物及び太陽電池の形成方法

Also Published As

Publication number Publication date
KR101484833B1 (ko) 2015-01-21
CN102844841A (zh) 2012-12-26
JP5958485B2 (ja) 2016-08-02
JP2014170939A (ja) 2014-09-18
CN102844841B (zh) 2016-06-15
KR20130066614A (ko) 2013-06-20
TW201508821A (zh) 2015-03-01
JPWO2011132779A1 (ja) 2013-07-18
WO2011132779A1 (ja) 2011-10-27
TWI499070B (zh) 2015-09-01
TW201201400A (en) 2012-01-01
KR20140129375A (ko) 2014-11-06

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