JP5623463B2 - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
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- JP5623463B2 JP5623463B2 JP2012141616A JP2012141616A JP5623463B2 JP 5623463 B2 JP5623463 B2 JP 5623463B2 JP 2012141616 A JP2012141616 A JP 2012141616A JP 2012141616 A JP2012141616 A JP 2012141616A JP 5623463 B2 JP5623463 B2 JP 5623463B2
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
- H05K7/20509—Multiple-component heat spreaders; Multi-component heat-conducting support plates; Multi-component non-closed heat-conducting structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Thermal Sciences (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
<構成>
図1(a),(b)に、本実施の形態における半導体モジュール10の断面図と底面図をそれぞれ示す。図1(a)に示すように、本実施の形態における半導体モジュール10はヒートシンク5に取り付けられて使用される。なお、半導体モジュール10とヒートシンク5の隙間6には、熱伝導グリスが挟持される。
本実施の形態における半導体モジュール10は、ヒートシンク5に取り付け可能な半導体モジュール10であって、半導体モジュール10の構成要素を収納するケース2と、一端がケース2に嵌合し、他端がヒートシンク5に当接する弾性部材1とを備え、弾性部材1によって、ケース2とヒートシンク5との間にグリスを挟持するための隙間6が設けられることを特徴とする。
図2(a),(b)に、本実施の形態における半導体モジュール10の断面図と底面図をそれぞれ示す。本実施の形態における半導体モジュール10において、弾性部材1の嵌合部はT字形状である。その他の構成は実施の形態1(図1(a),(b))と同じであるため、説明を省略する。なお、図2(a),(b)においても、図1(a),(b)と同様にx方向を下方向とする。
本実施の形態における半導体モジュール10に備わる弾性部材1において、ケース2と嵌合する部分がT字形状になっていることを特徴とする。
図3(a),(b)に、本実施の形態における半導体モジュール10の断面図と底面図をそれぞれ示す。図3(a),(b)において、x方向を下方向とする。
本実施の形態における半導体モジュール10に備わる弾性部材1は、ケース2の1辺のみに配置されることを特徴とする。
図4に、本実施の形態における半導体モジュール10の底面図を示す。断面図は、実施の形態2(図2(a))と同じである。図4に示すように、本実施の形態における半導体モジュール10に備わる弾性部材1は、ケース2の底面の周囲に沿って配置される。それ以外の構成は実施の形態2と同じであるため、説明を省略する。
本実施の形態における半導体モジュール10に備わる弾性部材1は、ケース2の周囲に沿って配置されることを特徴とする。
Claims (5)
- ヒートシンクに取り付け可能な半導体モジュールであって、
前記半導体モジュールの構成要素を収納するケースと、
一端が前記ケースに嵌合し、他端が前記ヒートシンクに当接する弾性部材と、
を備え、
前記弾性部材によって、前記ケースと前記ヒートシンクとの間に熱伝導グリスを挟持するための隙間が設けられることを特徴とする、
半導体モジュール。 - 前記弾性部材において、前記ケースと嵌合する部分がH字形状になっていることを特徴とする、
請求項1に記載の半導体モジュール。 - 前記弾性部材において、前記ケースと嵌合する部分がT字形状になっていることを特徴とする、
請求項1に記載の半導体モジュール。 - 前記弾性部材は、前記ケースの1辺のみに配置されることを特徴とする、
請求項1〜3のいずれかに記載の半導体モジュール。 - 前記弾性部材は、前記ケースの周囲に沿って配置されることを特徴とする、
請求項1〜3のいずれかに記載の半導体モジュール。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012141616A JP5623463B2 (ja) | 2012-06-25 | 2012-06-25 | 半導体モジュール |
CN201310056639.7A CN103515338B (zh) | 2012-06-25 | 2013-02-22 | 半导体模块 |
US13/784,733 US9357678B2 (en) | 2012-06-25 | 2013-03-04 | Semiconductor module |
DE102013207552.9A DE102013207552B4 (de) | 2012-06-25 | 2013-04-25 | Halbleitermodul |
Applications Claiming Priority (1)
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---|---|---|---|
JP2012141616A JP5623463B2 (ja) | 2012-06-25 | 2012-06-25 | 半導体モジュール |
Publications (2)
Publication Number | Publication Date |
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JP2014007267A JP2014007267A (ja) | 2014-01-16 |
JP5623463B2 true JP5623463B2 (ja) | 2014-11-12 |
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JP2012141616A Active JP5623463B2 (ja) | 2012-06-25 | 2012-06-25 | 半導体モジュール |
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US (1) | US9357678B2 (ja) |
JP (1) | JP5623463B2 (ja) |
CN (1) | CN103515338B (ja) |
DE (1) | DE102013207552B4 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US9357670B2 (en) * | 2014-02-18 | 2016-05-31 | Lockheed Martin Corporation | Efficient heat transfer from conduction-cooled circuit cards |
JP6308682B2 (ja) * | 2015-03-20 | 2018-04-11 | オートリブ日信ブレーキシステムジャパン株式会社 | 車両用制御装置および車両用ブレーキシステム |
JP2024006810A (ja) * | 2022-07-04 | 2024-01-17 | 日立Astemo株式会社 | 電気回路体および電力変換装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
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US5378924A (en) * | 1992-09-10 | 1995-01-03 | Vlsi Technology, Inc. | Apparatus for thermally coupling a heat sink to a lead frame |
JP2000220973A (ja) * | 1999-01-29 | 2000-08-08 | Fujikura Ltd | ヒートパイプの固定構造および固定方法 |
US7369411B2 (en) * | 2000-02-25 | 2008-05-06 | Thermagon, Inc. | Thermal interface assembly and method for forming a thermal interface between a microelectronic component package and heat sink |
JP3644428B2 (ja) * | 2001-11-30 | 2005-04-27 | 株式会社デンソー | パワーモジュールの実装構造 |
US6785137B2 (en) * | 2002-07-26 | 2004-08-31 | Stmicroelectronics, Inc. | Method and system for removing heat from an active area of an integrated circuit device |
DE20309244U1 (de) | 2003-06-16 | 2003-08-14 | Uniwill Comp Corp | Struktur zur Abschottung eines thermischen Zwischenmaterials |
JP4150324B2 (ja) * | 2003-10-30 | 2008-09-17 | 三菱電機株式会社 | パワー半導体モジュール |
JP2006196576A (ja) * | 2005-01-12 | 2006-07-27 | Toyota Motor Corp | パワーモジュールの実装構造およびパワーモジュール |
JP4367376B2 (ja) * | 2005-05-30 | 2009-11-18 | 株式会社日立製作所 | 電力半導体装置 |
US7486516B2 (en) * | 2005-08-11 | 2009-02-03 | International Business Machines Corporation | Mounting a heat sink in thermal contact with an electronic component |
US7508067B2 (en) * | 2005-10-13 | 2009-03-24 | Denso Corporation | Semiconductor insulation structure |
US7336485B2 (en) * | 2005-10-31 | 2008-02-26 | Hewlett-Packard Development Company, L.P. | Heat sink detection |
US20070097648A1 (en) | 2005-11-01 | 2007-05-03 | Kevin Xu | Method and apparatus for establishing optimal thermal contact between opposing surfaces |
JP4710735B2 (ja) * | 2006-06-22 | 2011-06-29 | 株式会社デンソー | 電子装置の製造方法 |
US7777329B2 (en) * | 2006-07-27 | 2010-08-17 | International Business Machines Corporation | Heatsink apparatus for applying a specified compressive force to an integrated circuit device |
DE102008033852B3 (de) | 2008-07-19 | 2009-09-10 | Semikron Elektronik Gmbh & Co. Kg | Anordnung mit einem Leistungshalbleitermodul und Verfahren zu deren Herstellung |
JP2011155118A (ja) * | 2010-01-27 | 2011-08-11 | Hitachi Ltd | ヒートシンク取付体およびヒートシンク取付け方法 |
-
2012
- 2012-06-25 JP JP2012141616A patent/JP5623463B2/ja active Active
-
2013
- 2013-02-22 CN CN201310056639.7A patent/CN103515338B/zh active Active
- 2013-03-04 US US13/784,733 patent/US9357678B2/en active Active
- 2013-04-25 DE DE102013207552.9A patent/DE102013207552B4/de active Active
Also Published As
Publication number | Publication date |
---|---|
CN103515338A (zh) | 2014-01-15 |
US9357678B2 (en) | 2016-05-31 |
JP2014007267A (ja) | 2014-01-16 |
DE102013207552B4 (de) | 2019-06-06 |
US20130342999A1 (en) | 2013-12-26 |
CN103515338B (zh) | 2016-12-28 |
DE102013207552A1 (de) | 2014-01-02 |
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