CN103515338B - 半导体模块 - Google Patents

半导体模块 Download PDF

Info

Publication number
CN103515338B
CN103515338B CN201310056639.7A CN201310056639A CN103515338B CN 103515338 B CN103515338 B CN 103515338B CN 201310056639 A CN201310056639 A CN 201310056639A CN 103515338 B CN103515338 B CN 103515338B
Authority
CN
China
Prior art keywords
semiconductor module
elastic component
radiator
housing
thermal grease
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201310056639.7A
Other languages
English (en)
Other versions
CN103515338A (zh
Inventor
周磊杰
冈部浩之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN103515338A publication Critical patent/CN103515338A/zh
Application granted granted Critical
Publication of CN103515338B publication Critical patent/CN103515338B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00Constructional details common to different types of electric apparatus
    • H05K7/20Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2039Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
    • H05K7/20509Multiple-component heat spreaders; Multi-component heat-conducting support plates; Multi-component non-closed heat-conducting structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/049Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

本发明涉及半导体模块。本发明的目的在于,提供一种能对夹持在半导体模块和散热器之间的导热脂的流出进行抑制的半导体模块。本发明的半导体模块(10)是能装配于散热器(5)的半导体模块(10),其特征在于,具备:壳体(2),收容半导体模块(10)的结构要素;以及弹性构件(1),一端嵌合于壳体(2),另一端抵接于散热器(5),利用弹性构件(1)在壳体(2)和散热器(5)之间设置有用于夹持导热脂的间隙(6)。

Description

半导体模块
技术领域
本发明涉及半导体模块,特别涉及能装配于散热器(heat sink)的半导体模块。
背景技术
关于半导体模块、特别是应对大功率的半导体模块,为了对工作时产生的热进行散热,一般装配于散热器来进行使用。此外,为了将半导体模块的热有效地传至散热器,在半导体模块和散热器之间涂敷有导热脂(grease)(例如,参照专利文献1)。
以往,在半导体模块的底面粘接地配置有弹性构件,利用粘接剂粘接该弹性构件和散热器,由此将半导体模块装配于散热器。
此外,通过在夹持于半导体模块和散热器之间的导热脂周围配置该弹性构件,从而还起到防止导热脂流出的作用。
现有技术文献
专利文献
专利文献1:日本特开2008–4745号公报。
发明要解决的课题
在上述的现有技术中,用粘接剂粘接弹性构件与半导体模块的底面以及散热器。因而,当粘接部分由于半导体模块的发热等的影响而劣化时,导热脂从劣化部位流出,无法妥当地进行半导体模块的散热,存在半导体模块的性能下降的问题。
此外,在粘接部分的劣化进一步加重的情况下,还存在半导体模块从散热器脱落的问题。
特别是在半导体模块的装配角度相对于地面不是水平的情况下容易产生以上的问题。
发明内容
本发明是为了解决以上的课题而完成的,其目的在于提供一种能对夹持在半导体模块和散热器之间的导热脂的流出进行抑制的半导体模块。
用于解决课题的方案
本发明的半导体模块是能装配于散热器的半导体模块,其特征在于,具备:壳体,收容半导体模块的结构要素;以及弹性构件,一端嵌合于壳体,另一端抵接于散热器,利用该弹性构件在壳体和散热器之间设置有用于夹持导热脂的间隙。
发明效果
根据本发明,由于弹性构件嵌合于壳体而被固定,所以在壳体和散热器之间的间隙夹持有导热脂的情况下,能抑制由弹性构件从壳体脱离造成的导热脂的流出。此外,能抑制由弹性构件从壳体脱离造成的半导体模块主体的脱落。因而,能实现半导体模块的长期使用。
附图说明
图1是实施方式1的半导体模块的截面图和底面图。
图2是实施方式2的半导体模块的截面图和底面图。
图3是实施方式3的半导体模块的截面图和底面图。
图4是实施方式4的半导体模块的底面图。
具体实施方式
<实施方式1>
<结构>
在图1(a)、(b)中分别示出本实施方式的半导体模块10的截面图和底面图。如图1(a)所示,将本实施方式的半导体模块10装配于散热器5来进行使用。再有,在半导体模块10和散热器5的间隙6夹持有导热脂。
在本实施方式中,考虑半导体模块10的装配角度相对于地面不是水平的情况,例如,考虑装配角度与地面垂直的情况。在图1(a)、(b)中将x方向设为下方向。
半导体模块10如以下那样构成。在金属基板4上,经由绝缘基板(未图示)配置有例如IGBT(Insulated Gate Bipolar Transister:绝缘栅双极晶体管)、续流二极管等半导体元件3a。在各半导体元件3a的电极和主电极3c之间用例如铝线3b等设置有布线。以上所述的半导体模块10的结构要素被收容于壳体2中。此外,为了密闭壳体2,在壳体2上部装配有盖子3d。
在壳体2的底面配置有弹性构件1。弹性构件1的一端与壳体2的底面嵌合,嵌合部分为H字形状。此外,弹性构件1的另一端抵接于散热器5。
如图1(b)所示,弹性构件1沿着壳体2底面的下方向侧的边和与下方向侧的边相向的边进行配置。特别是沿着壳体2底面的下方向侧的边配置弹性构件1,由此能抑制导热脂由于重力而流出。
再有,弹性构件1例如是橡胶类树脂。此外,散热器5的材质是铝、铜等。此外,为了效率良好地进行散热,也可以在散热器5形成有散热片(fin)。
在将半导体模块10固定于散热器5的情况下,利用粘接剂将弹性构件1的另一端和散热器5粘接来进行固定。或者,也可以对壳体2和散热器5进行螺丝固定,由此将弹性构件1压接于散热器5来进行固定。在该情况下,因为弹性构件1预先被嵌合于壳体2,所以容易进行螺丝固定的操作。
通过经由弹性构件1将壳体2固定于散热器5,从而在半导体模块10和散热器5之间设置有间隙6。为了将由半导体模块10产生的热有效地传至散热器5,在该间隙6夹持有导热脂。在此,导热脂是一般的导热脂,例如是以硅为主要成分的导热脂。
<效果>
本实施方式的半导体模块10是能装配于散热器5的半导体模块10,其特征在于,具备:壳体2,收容半导体模块10的结构要素;以及弹性构件1,一端嵌合于壳体2,另一端抵接于散热器5,利用弹性构件1在壳体2和散热器5之间设置有用于夹持导热脂的间隙6。
因此,由于弹性构件1与壳体2嵌合而被固定,所以在壳体2和散热器5之间的间隙6夹持有导热脂的情况下,能抑制由弹性构件1从壳体2脱离造成的导热脂的流出。此外,能抑制由弹性构件1从壳体2脱离造成的半导体模块10主体的脱落。因而,能实现半导体模块10的长期使用。
此外,本实施方式的半导体模块10所具备的弹性构件1的特征在于,与壳体2嵌合的部分为H字形状。
因此,通过使弹性构件的嵌合部分为H字形状,从而能将弹性构件1可靠地固定于壳体2。进而,通过使嵌合部分为H字形状,从而能较大地获得弹性构件1的与散热器5抵接的部分的面积,在将半导体模块10装配于散热器5时,能更可靠地将弹性构件1与散热器5粘接或压接。因而,能抑制导热脂从壳体2和散热器5之间的间隙6流出。
<实施方式2>
在图2(a)、(b)中分别示出本实施方式的半导体模块10的截面图和底面图。在本实施方式的半导体模块10中,弹性构件1的嵌合部为T字形状。由于其它结构与实施方式1(图1(a)、(b))相同,所以省略说明。再有,在图2(a)、(b)中也与图1(a)、(b)同样地将x方向设为下方向。
<效果>
本实施方式的半导体模块10所具备的弹性构件1的特征在于,与壳体2嵌合的部分为T字形状。
因此,与实施方式1同样地,能抑制导热脂从壳体2与弹性构件1的连接部分流出。此外,能抑制由弹性构件1从壳体2脱离造成的半导体模块10主体从散热器的脱落。
进而,通过使弹性构件1的嵌合部为T字形状,从而与实施方式1比较,能实现弹性构件1的小型化。因而,能削减弹性构件1的材料使用量,因此能减少制造成本。
<实施方式3>
在图3(a)、(b)中分别示出本实施方式的半导体模块10的截面图和底面图。在图3(a)、(b)中,将x方向设为下方向。
如图3(b)所示,在本实施方式的半导体模块10中,仅在壳体2的底面的x方向侧的一边配置有弹性构件1。由于其它结构与实施方式2(图2(a)、(b))相同,所以省略说明。
即使在夹持于半导体模块10和散热器5之间的间隙6的导热脂由于重力而向下方向流动的情况下,只要至少在下方向侧即x方向侧的一边配置弹性构件1,就会对防止导热脂的流出是有效的。此外,能利用弹性构件1将半导体模块10固定于散热器5。
<效果>
本实施方式的半导体模块10所具备的弹性构件1的特征在于,仅配置在壳体2的一边。
因此,只要仅在壳体2的下方向侧的一边配置弹性构件1,就能得到与实施方式2相同的效果并且进一步削减弹性构件1的使用量、实现制造成本的进一步削减。
<实施方式4>
在图4中示出本实施方式的半导体模块10的底面图。截面图与实施方式2(图2(a))相同。如图4所示,本实施方式的半导体模块10所具备的弹性构件1沿着壳体2的底面的周围进行配置。由于除此之外的结构与实施方式2相同,所以省略说明。
<效果>
本实施方式的半导体模块10所具备的弹性构件1的特征在于,沿着壳体2的周围进行配置。
因此,在将半导体模块10装配于散热器5的情况下,夹持在半导体模块10和散热器5之间的间隙6的导热脂被弹性构件1包围,因此本实施方式的半导体模块10能更可靠地防止导热脂的流出。
再有,本发明能在其发明范围内对各实施方式自由地进行组合、或者对各实施方式适当地进行变形、省略。
附图标记的说明:
1 弹性构件、2 壳体、3a 半导体元件、3b 铝线、3c 主电极、3d 盖子、4 金属基板、5 散热器、6 间隙、10 半导体模块。

Claims (4)

1.一种半导体模块,能装配于散热器,其特征在于,具备:
壳体,收容所述半导体模块的结构要素;以及
弹性构件,一端埋入所述壳体的底面,另一端抵接于所述散热器,
利用所述弹性构件在所述壳体和所述散热器之间设置有用于夹持导热脂的间隙,
所述弹性构件仅配置在所述壳体的重力方向侧的一边。
2.根据权利要求1所述的半导体模块,其特征在于,
在所述弹性构件中,所述一端为H字形状。
3.根据权利要求1所述的半导体模块,其特征在于,
在所述弹性构件中,所述一端为T字形状。
4.根据权利要求1~3的任一项所述的半导体模块,其特征在于,
所述弹性构件沿着所述壳体的周围进行配置。
CN201310056639.7A 2012-06-25 2013-02-22 半导体模块 Active CN103515338B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012141616A JP5623463B2 (ja) 2012-06-25 2012-06-25 半導体モジュール
JP2012-141616 2012-06-25

Publications (2)

Publication Number Publication Date
CN103515338A CN103515338A (zh) 2014-01-15
CN103515338B true CN103515338B (zh) 2016-12-28

Family

ID=49754292

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310056639.7A Active CN103515338B (zh) 2012-06-25 2013-02-22 半导体模块

Country Status (4)

Country Link
US (1) US9357678B2 (zh)
JP (1) JP5623463B2 (zh)
CN (1) CN103515338B (zh)
DE (1) DE102013207552B4 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9357670B2 (en) * 2014-02-18 2016-05-31 Lockheed Martin Corporation Efficient heat transfer from conduction-cooled circuit cards
JP6308682B2 (ja) * 2015-03-20 2018-04-11 オートリブ日信ブレーキシステムジャパン株式会社 車両用制御装置および車両用ブレーキシステム
JP2024006810A (ja) * 2022-07-04 2024-01-17 日立Astemo株式会社 電気回路体および電力変換装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101484991A (zh) * 2006-07-27 2009-07-15 国际商业机器公司 集成电路散热装置
TWI316170B (en) * 2005-11-01 2009-10-21 Nanoconduction Inc Method and apparatus for establishing optimal thermal contact between opposing surfaces

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5387554A (en) * 1992-09-10 1995-02-07 Vlsi Technology, Inc. Apparatus and method for thermally coupling a heat sink to a lead frame
JP2000220973A (ja) * 1999-01-29 2000-08-08 Fujikura Ltd ヒートパイプの固定構造および固定方法
US7369411B2 (en) * 2000-02-25 2008-05-06 Thermagon, Inc. Thermal interface assembly and method for forming a thermal interface between a microelectronic component package and heat sink
JP3644428B2 (ja) * 2001-11-30 2005-04-27 株式会社デンソー パワーモジュールの実装構造
US6785137B2 (en) * 2002-07-26 2004-08-31 Stmicroelectronics, Inc. Method and system for removing heat from an active area of an integrated circuit device
DE20309244U1 (de) 2003-06-16 2003-08-14 Uniwill Computer Corp., Chung Li, Tao Yuan Struktur zur Abschottung eines thermischen Zwischenmaterials
JP4150324B2 (ja) * 2003-10-30 2008-09-17 三菱電機株式会社 パワー半導体モジュール
JP2006196576A (ja) * 2005-01-12 2006-07-27 Toyota Motor Corp パワーモジュールの実装構造およびパワーモジュール
JP4367376B2 (ja) * 2005-05-30 2009-11-18 株式会社日立製作所 電力半導体装置
US7486516B2 (en) * 2005-08-11 2009-02-03 International Business Machines Corporation Mounting a heat sink in thermal contact with an electronic component
US7508067B2 (en) * 2005-10-13 2009-03-24 Denso Corporation Semiconductor insulation structure
US7336485B2 (en) * 2005-10-31 2008-02-26 Hewlett-Packard Development Company, L.P. Heat sink detection
JP4710735B2 (ja) * 2006-06-22 2011-06-29 株式会社デンソー 電子装置の製造方法
DE102008033852B3 (de) 2008-07-19 2009-09-10 Semikron Elektronik Gmbh & Co. Kg Anordnung mit einem Leistungshalbleitermodul und Verfahren zu deren Herstellung
JP2011155118A (ja) * 2010-01-27 2011-08-11 Hitachi Ltd ヒートシンク取付体およびヒートシンク取付け方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI316170B (en) * 2005-11-01 2009-10-21 Nanoconduction Inc Method and apparatus for establishing optimal thermal contact between opposing surfaces
CN101484991A (zh) * 2006-07-27 2009-07-15 国际商业机器公司 集成电路散热装置

Also Published As

Publication number Publication date
US9357678B2 (en) 2016-05-31
JP5623463B2 (ja) 2014-11-12
DE102013207552A1 (de) 2014-01-02
US20130342999A1 (en) 2013-12-26
CN103515338A (zh) 2014-01-15
DE102013207552B4 (de) 2019-06-06
JP2014007267A (ja) 2014-01-16

Similar Documents

Publication Publication Date Title
US11166396B2 (en) Box-type vehicle-mounted control device
JP5574170B2 (ja) 半導体モジュール実装構造
JP4710735B2 (ja) 電子装置の製造方法
CN103515338B (zh) 半导体模块
US10820406B2 (en) Circuit structure and electrical junction box
JP2008270297A (ja) パワーユニットおよび放熱容器
WO2016203764A1 (ja) 半導体装置及びモジュール部品
JP2010087002A (ja) 発熱部品冷却構造
US9478477B2 (en) Semiconductor device
JP2011129797A (ja) 制御装置
JP5556531B2 (ja) 電子モジュールの取付構造
US10373919B2 (en) Semiconductor device and method of manufacturing semiconductor device
JP6316434B2 (ja) 半導体装置
US10157815B2 (en) Semiconductor device
JP6003109B2 (ja) パワーモジュール
JP4860442B2 (ja) 半導体装置
WO2015186305A1 (ja) 半導体装置
KR101704257B1 (ko) 열전모듈
JP5348121B2 (ja) 電子装置
JP5834758B2 (ja) 半導体モジュール
US20210183726A1 (en) Semiconductor device
JP2018067596A (ja) 半導体モジュール、駆動装置、電動パワーステアリング装置、車両及び半導体モジュールの製造方法
CN109362174A (zh) Mos管的散热结构及汽车电动助力转向系统
JP2018067588A (ja) 半導体モジュール、駆動装置、電動パワーステアリング装置、車両及び半導体モジュールの製造方法
JP2009188192A (ja) 回路装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant