JP5615885B2 - 干渉式太陽電池セル - Google Patents
干渉式太陽電池セル Download PDFInfo
- Publication number
- JP5615885B2 JP5615885B2 JP2012226768A JP2012226768A JP5615885B2 JP 5615885 B2 JP5615885 B2 JP 5615885B2 JP 2012226768 A JP2012226768 A JP 2012226768A JP 2012226768 A JP2012226768 A JP 2012226768A JP 5615885 B2 JP5615885 B2 JP 5615885B2
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- JP
- Japan
- Prior art keywords
- layer
- photovoltaic device
- light
- optical cavity
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 230000003287 optical effect Effects 0.000 claims description 398
- 238000010521 absorption reaction Methods 0.000 claims description 212
- 230000005684 electric field Effects 0.000 claims description 73
- 238000001228 spectrum Methods 0.000 claims description 70
- 239000000758 substrate Substances 0.000 claims description 57
- 230000001965 increasing effect Effects 0.000 claims description 56
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- 238000006243 chemical reaction Methods 0.000 claims description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- 239000003989 dielectric material Substances 0.000 claims description 13
- 230000031700 light absorption Effects 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 230000036961 partial effect Effects 0.000 claims description 9
- 238000002310 reflectometry Methods 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 947
- 239000000463 material Substances 0.000 description 80
- 239000006096 absorbing agent Substances 0.000 description 74
- 238000000034 method Methods 0.000 description 56
- 238000010586 diagram Methods 0.000 description 48
- 238000002835 absorbance Methods 0.000 description 38
- 239000010409 thin film Substances 0.000 description 30
- 239000011521 glass Substances 0.000 description 27
- 238000013461 design Methods 0.000 description 25
- 230000003595 spectral effect Effects 0.000 description 21
- 230000035945 sensitivity Effects 0.000 description 19
- 229910004298 SiO 2 Inorganic materials 0.000 description 18
- 239000004020 conductor Substances 0.000 description 18
- 230000008033 biological extinction Effects 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 238000005457 optimization Methods 0.000 description 12
- 239000011149 active material Substances 0.000 description 10
- 230000001427 coherent effect Effects 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- 238000013459 approach Methods 0.000 description 9
- 239000002131 composite material Substances 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 9
- 229910052738 indium Inorganic materials 0.000 description 9
- 239000012811 non-conductive material Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 230000003068 static effect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 230000003667 anti-reflective effect Effects 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000005670 electromagnetic radiation Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 4
- 239000011358 absorbing material Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000003086 colorant Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 239000002803 fossil fuel Substances 0.000 description 4
- 230000001902 propagating effect Effects 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000013598 vector Substances 0.000 description 4
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000010792 warming Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- SPAGIJMPHSUYSE-UHFFFAOYSA-N Magnesium peroxide Chemical compound [Mg+2].[O-][O-] SPAGIJMPHSUYSE-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000012938 design process Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/284—Interference filters of etalon type comprising a resonant cavity other than a thin solid film, e.g. gas, air, solid plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Description
ηabs∝n×k×|E(x)|2
で表される。
103 光線
104 光路
105 光路
106 光路
107 光路
201 上部反射体層
202 底部反射体層
203 光線
204および207 経路
300 干渉変調器スタック
301 ガラス基材
302 電極層
303 吸収体層
304 光空洞共振器
305 Al反射体
400 IMOD
401 光線
402 光線
403 吸収体
403 光線
403a 光線
403b 光線
404 光線
404a 光線
404b 光線
404c 光線
405 透過光線
405a 光線
405b、405c 光線
405d 光線
405e 光線
405f 光線
406 光線
406a 反射光線
406b、406c、406d、406e 光線
407 光線
407a 光線
407f 反射光線
900 太陽電池セル
901 前面電極
901および905 電極層
902 反射防止(AR)コーティング
903 n型層
903および904 PV材料
906 電球
907 外部回路
1000 薄膜PVセル
1001 ガラス基材
1002 第1の透明電極層
1003 PV材料の層
1005 第2の透明電極層
1006 反射体
1101 ITOまたはZnO伝導電極層
1102 CdSを含むn型材料の層
1103 CIGSを含むp型材料の層
1104 Moを含む反射体層
1105 ガラス基材
1106 光空洞共振器
1106a ITO層
1106b SiO2層
1106c エアーギャップ
1107 支柱
1201、1202、1203、1204 層
1203 吸収体層
1204 光空洞共振器
1205 金属導体/反射体
1300 iPVデバイス
1302 開始状態
1304 状態
1306 状態
1308 状態
1310 終了状態
1401 曲線
1402 曲線
1403 曲線
1501 織り目加工されたガラス基材
1502 第1のITO層
1504 領域
1506 第2のITO層
1507 AgまたはAl層
1600 等高線図
1610 吸収
1700 光起電力デバイス
1701 活性領域
1702 ガラス基材
1703 ITOまたはZnO電極層
1706 Cu(In,Ga)Se2(「CIGS」)、p型層
1707 CdS、n型層
1708 MoもしくはAl反射体層
1900A 光起電力デバイス
1901 活性層
1902 ガラス基材
1904 ITOまたはZnO電極層
1906 CIGS、p型層
1907 CdS、n型層
1908 MoもしくはAl反射体層
1910 光空洞共振器
2100 iPVデバイス
2100B 金属電極層
2101 活性領域
2102 ガラス基材
2104 ITO層
2106 CIGS、p型層
2107 CdS、n型層
2108A 第1の金属層
2108a 反射体
2108B 第2の金属層
2108b 電極
2108c 誘電体材料
2110 光空洞共振器
2111A 第1のビア
2111B 第2のビア
2204 上部光共振層
2206 多結晶Cu(In,Ga)Se2(CIGS)、p型層
2300 光起電力デバイス
2302 ガラス基材
2306 CIGS、p型層
2307 CdS、n型層
2308A 第1の金属層
2308B 第2の金属層
2310 エアーギャップ光空洞共振器
2311A 第1のビア
2501 基材
2502 基材
2502 反射体
2502a 電極
2502b 反射体
2503 光空洞共振器
2504 p型CIGS層
2505 n型CDS層
2506 光共振層
2507aおよび2507b ビア
2508 伝導性ITO層
2602 反射体
2603 光空洞共振器
2604 p型CIGS層
2605 n型CdS層
2700 従来の多接合光起電力デバイス
2702 ガラス基材
2704Aおよび2704B 透明電極
2706A、2706B、2706C 活性層
2708 反射体層
2804A 第1の光吸収層
2804B 第2の光空洞共振器
2806A、2806B、および2806C 吸収体/活性層
2902 基材
2904A 光共振層
2904Bおよび2904C 光共振層
2905 光空洞共振器
2906A 接合部
2906A、2906B、2906C 活性層
2908 反射体
3001 基材
3004 光吸収層
3005と3002 透明伝導性酸化物(TCO)層
3007 金属リード
3010 エアーギャップ光空洞共振器
3102 反射体層
3103 空洞共振器
3104 光吸収層
3105 上部電極層
3107 金属リード
3110および3112 電気プローブ
3114 電圧計
3201 基材
3204a、3204b、および3204c 活性または吸収体層
3206 ビア
Claims (33)
- 光起電力デバイスであって、
入射光を受け取り透過するように構成されている透過基材と、
前記基材の後方に配設された活性層であって、前記活性層によって光が吸収された結果として第1導電層と第2導電層との間に電気信号を発生するように構成されている活性層と、
前記活性層を透過した光を反射するように配設されている反射体層と、
前記活性層と前記反射体層との間にある光空洞共振器と、
前記活性層と前記第1導電層との間に電気的接続を設けるように構成されている少なくとも1つのビアと、
を備え、
前記光空洞共振器の厚さが、前記厚さを制御するための制御信号を印加することで調節可能であり、
前記光空洞共振器が、エアーギャップまたは誘電体材料を含み、
前記光空洞共振器が存在することで、前記活性層内の光の平均電界強度が増大し、
前記活性層が、前記光空洞共振器の第1側上に配設され、
前記第1導電層が、前記光空洞共振器の第2側上に配設され、
前記反射体層によって反射された光の一部が、前記基材を透過する、光起電力デバイス。 - 前記活性層が、半導体を含む請求項1に記載の光起電力デバイス。
- 前記活性層が、PN接合またはPIN接合を含む請求項2に記載の光起電力デバイス。
- 前記反射体層が、80%より高い反射率を有する請求項1に記載の光起電力デバイス。
- 前記反射体層が、金属を含む請求項1に記載の光起電力デバイス。
- 前記反射体層が、アルミニウム、モリブデン、銀、及び金からなる群から選択された金属を含む請求項5に記載の光起電力デバイス。
- 前記光起電力デバイスがいくつかの可視波長に対して部分的光透過性を有するような部分的反射性を前記反射体層が有する請求項1に記載の光起電力デバイス。
- 前記光起電力デバイスがいくつかの赤外線または紫外線波長に対して部分的光透過性を有するような部分的反射性を前記反射体層が有する請求項1に記載の光起電力デバイス。
- 前記光空洞共振器が、複数の層を備える請求項1に記載の光起電力デバイス。
- 前記光空洞共振器が、エアーギャップを備える請求項1に記載の光起電力デバイス。
- 前記光空洞共振器が、誘電体材料を備える請求項1に記載の光起電力デバイス。
- 前記光空洞共振器の厚さが、前記活性層内の光吸収を増大するように最適化された請求項1に記載の光起電力デバイス。
- 前記活性層の上に配設された反射防止層をさらに備える請求項1に記載の光起電力デバイス。
- 前記光空洞共振器が、2000nm未満の厚さを有する請求項1に記載の光起電力デバイス。
- 前記活性層が、太陽スペクトル中の波長に対しある吸収効率を有し、前記太陽スペクトル中の前記波長にわたって積分された前記吸収効率が、前記光空洞共振器の存在下で少なくとも5%だけ増大する請求項1に記載の光起電力デバイス。
- 太陽スペクトル中の波長に対しある総合変換効率を有し、前記太陽スペクトル中の前記波長にわたって積分された前記総合変換効率が、前記光空洞共振器の存在下で少なくとも15%だけ増大する請求項1に記載の光起電力デバイス。
- 前記太陽スペクトル中の前記波長にわたって積分された前記総合変換効率が、前記光空洞共振器の存在下で少なくとも20%だけ増大する請求項16に記載の光起電力デバイス。
- 前記太陽スペクトル中の前記波長にわたって積分された前記総合変換効率が、前記光空洞共振器の存在下で少なくとも25%だけ増大する請求項16に記載の光起電力デバイス。
- 前記光空洞共振器が存在することで、前記光起電力デバイスが太陽スペクトルに曝された場合に前記活性層内の平均電界強度が少なくとも20%だけ増大する請求項1に記載の光起電力デバイス。
- 前記光空洞共振器が存在することで、前記光起電力デバイスが太陽スペクトルに曝された場合に前記活性層内の平均電界強度が少なくとも25%だけ増大する請求項1に記載の光起電力デバイス。
- 前記光空洞共振器が存在することで、前記光起電力デバイスが太陽スペクトルに曝された場合に前記活性層内の平均電界強度が少なくとも30%だけ増大する請求項1に記載の光起電力デバイス。
- 前記光起電力デバイスが0.7より大きい太陽スペクトルにわたって積分された総合変換効率を有するような厚さを前記光空洞共振器が有する請求項1に記載の光起電力デバイス。
- 前記光起電力デバイスが0.8より大きい太陽スペクトルにわたって積分された総合変換効率を有するような厚さを前記光空洞共振器が有する請求項1に記載の光起電力デバイス。
- 前記光起電力デバイスが0.9より大きい太陽スペクトルにわたって積分された総合変換効率を有するような厚さを前記光空洞共振器が有する請求項1に記載の光起電力デバイス。
- 前記光起電力デバイスが0.95より大きい太陽スペクトルにわたって積分された総合変換効率を有するような厚さを前記光空洞共振器が有する請求項1に記載の光起電力デバイス。
- 少なくとも1つの追加の活性層と前記活性層を互いに分離する少なくとも1つの不活性層とをさらに備える請求項1に記載の光起電力デバイス。
- 前記少なくとも1つの不活性層が、少なくとも1つの光共振層を含む請求項26に記載の光起電力デバイス。
- 少なくとも1つの追加の光共振層をさらに備える請求項1に記載の光起電力デバイス。
- 前記少なくとも1つの追加の光共振層が、前記活性層と前記反射体層との間に少なくとも1つの光空洞共振器を備える請求項28に記載の光起電力デバイス。
- 前記光空洞共振器が存在することで、前記活性層の周りを囲む1つまたは複数の層内に吸収される光の量が減少する請求項1に記載の光起電力デバイス。
- 前記光空洞共振器が存在することで、前記活性層内に電界共振が発生する請求項1に記載の光起電力デバイス。
- 前記光空洞共振器の存在によりもたらされる、前記活性層について太陽スペクトルにわたって積分された平均電界強度の増加が、前記光起電力デバイス内の他の層について前記太陽スペクトルにわたって積分された平均電界強度の増加に比べて大きい請求項1に記載の光起電力デバイス。
- 前記光空洞共振器が存在することで、前記反射体層の前方にあり、前記活性層の周りを囲む1つまたは複数の層内に吸収される光の量が減少する請求項1に記載の光起電力デバイス。
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EP2183623A1 (en) * | 2007-07-31 | 2010-05-12 | Qualcomm Mems Technologies, Inc. | Devices for enhancing colour shift of interferometric modulators |
US7847999B2 (en) * | 2007-09-14 | 2010-12-07 | Qualcomm Mems Technologies, Inc. | Interferometric modulator display devices |
CN101802678B (zh) * | 2007-09-17 | 2014-03-12 | 高通Mems科技公司 | 半透明/透射反射型发光干涉式调制器装置 |
US20090078316A1 (en) * | 2007-09-24 | 2009-03-26 | Qualcomm Incorporated | Interferometric photovoltaic cell |
US20090293955A1 (en) * | 2007-11-07 | 2009-12-03 | Qualcomm Incorporated | Photovoltaics with interferometric masks |
-
2007
- 2007-12-03 US US11/949,699 patent/US20090078316A1/en not_active Abandoned
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2008
- 2008-03-31 EP EP08153697.1A patent/EP2040304B1/en not_active Not-in-force
- 2008-09-18 CN CN200880108464.7A patent/CN101809755B/zh not_active Expired - Fee Related
- 2008-09-18 KR KR1020107008989A patent/KR20100074223A/ko not_active Application Discontinuation
- 2008-09-18 JP JP2010525980A patent/JP5600593B2/ja not_active Expired - Fee Related
- 2008-09-18 RU RU2010109930/28A patent/RU2010109930A/ru not_active Application Discontinuation
- 2008-09-18 CN CN201410380015.5A patent/CN104167456A/zh active Pending
- 2008-09-18 WO PCT/US2008/076901 patent/WO2009042497A2/en active Application Filing
- 2008-09-18 CA CA2700479A patent/CA2700479A1/en not_active Abandoned
- 2008-09-18 BR BRPI0817957-3A patent/BRPI0817957A2/pt not_active IP Right Cessation
- 2008-09-24 TW TW097136647A patent/TW200937647A/zh unknown
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2010
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2012
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2014
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11901473B2 (en) | 2020-04-16 | 2024-02-13 | The Regents Of The University Of Michigan | Thermophotovoltaic cells with integrated air-bridge for improved efficiency |
Also Published As
Publication number | Publication date |
---|---|
US20090078316A1 (en) | 2009-03-26 |
CN101809755B (zh) | 2014-09-03 |
EP2040304B1 (en) | 2014-03-26 |
JP2010541211A (ja) | 2010-12-24 |
WO2009042497A8 (en) | 2009-08-20 |
CN101809755A (zh) | 2010-08-18 |
EP2040304A1 (en) | 2009-03-25 |
US20140332075A1 (en) | 2014-11-13 |
RU2010109930A (ru) | 2011-11-10 |
KR20100074223A (ko) | 2010-07-01 |
BRPI0817957A2 (pt) | 2015-05-05 |
CN104167456A (zh) | 2014-11-26 |
TW200937647A (en) | 2009-09-01 |
JP2015008326A (ja) | 2015-01-15 |
JP2013051426A (ja) | 2013-03-14 |
JP5600593B2 (ja) | 2014-10-01 |
US20100236624A1 (en) | 2010-09-23 |
WO2009042497A2 (en) | 2009-04-02 |
CA2700479A1 (en) | 2009-04-02 |
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