JP5611499B2 - マルチレベルメモリ素子およびこれをプログラムし読出す方法 - Google Patents
マルチレベルメモリ素子およびこれをプログラムし読出す方法 Download PDFInfo
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- JP5611499B2 JP5611499B2 JP2004138733A JP2004138733A JP5611499B2 JP 5611499 B2 JP5611499 B2 JP 5611499B2 JP 2004138733 A JP2004138733 A JP 2004138733A JP 2004138733 A JP2004138733 A JP 2004138733A JP 5611499 B2 JP5611499 B2 JP 5611499B2
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- level memory
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- 238000000034 method Methods 0.000 title claims description 36
- 239000000463 material Substances 0.000 claims description 29
- 150000004770 chalcogenides Chemical class 0.000 claims description 21
- 238000010586 diagram Methods 0.000 description 8
- 238000001514 detection method Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 2
- 238000013500 data storage Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Description
104 トランジスタ素子
106 カルコゲン化物素子
108a,108b ワード線
110a,110b ビット線
112 メモリアレイ部
Claims (18)
- ワード線と、
ビット線と、
ワード線およびビット線に電気的に接続されたコアセルであって、このコアセルはしき値変化材料としてのカルコゲン化物材料を備えており、当該カルコゲン化物材料はプログラムされて記憶用の少なくとも4つのレベルが設定されるのであり、記憶用の前記レベルの各々は対応する少なくとも4つのしきい値電圧に関連づけられているコアセルを有するマルチレベルメモリ素子を備え、
マルチレベルメモリ素子に読出し電圧を印加する手段と、
読出し電圧に付随する電流の状態を判定する手段と、
この電流に基づいてマルチレベルメモリ素子のアクセス状態を判定する手段と、
マルチレベルメモリ素子に読出し電圧を印加する操作が、読出し電圧に付随する電流の状態がオン状態である際にはマルチレベルメモリ素子に異なる値の読出し電圧を印加する手段と、
を備えているマルチレベルメモリ。 - 前記コアセルに電気的に接続された切換え(steering)要素を更に備えている請求項1に記載のマルチレベルメモリ。
- 前記切換え要素がアクセストランジスタである請求項2に記載のマルチレベルメモリ。
- 前記切換え要素がアクセスP−Nダイオードである請求項2に記載のマルチレベルメモリ。
- 前記切換え要素がアクセスバイポーラジャンクショントランジスタ(BJT:bipolar junction transistor)である請求項2に記載のマルチレベルメモリ。
- 前記対応するしきい値電圧の各々が互いに異なっている請求項1に記載のマルチレベルメモリ。
- 前記対応するしきい値電圧の各々が、対応する電流に関連づけられている請求項1に記載のマルチレベルメモリ。
- 前記マルチレベルメモリコアの各レベルが記憶用の所定の状態を規定し、この状態が電流の差によって検出される請求項1に記載のマルチレベルメモリ。
- 前記マルチレベルメモリコアが不揮発性ランダムアクセスメモリである請求項1に記載のマルチレベルメモリ。
- ワード線およびビット線に電気的に接続されたコアセルがしきい値変化材料としてのカルコゲン化物材料を備えており、当該カルコゲン化物材料はプログラムされて記憶用の少なくとも4つのレベルが設定され、記憶用の前記レベルの各々は対応する少なくとも4つのしきい値電圧に関連づけられているコアセルを有するマルチレベルメモリ素子を読出す方法であって、
マルチレベルメモリ素子に読出し電圧を印加することと、
読出し電圧に付随する電流の状態を判定することと、
この電流に基づいてマルチレベルメモリ素子のアクセス状態を判定することと、
マルチレベルメモリ素子に読出し電圧を印加する操作が、読出し電圧に付随する電流の状態がオン状態である際にはマルチレベルメモリ素子に異なる値の読出し電圧を印加すること、
を備えているマルチレベルメモリ素子を読出す方法。 - 前記読出し電圧が、隣接する少なくとも4つのしきい値電圧の間にある請求項10に記載の方法。
- マルチレベルメモリ素子をプログラムすることを更に備えている請求項10に記載の方法。
- マルチレベルメモリ素子を前記プログラムすることが、
0.1Vと20Vとの間の電圧を印加することを備えている請求項12に記載の方法。 - 0.1Vと20Vとの間の電圧を前記印加することが、
1nsと1,000nsとの間だけ電圧を印加することを備えている請求項13に記載の方法。 - 前記マルチレベルメモリ素子が不揮発性メモリ素子である請求項10に記載の方法。
- マルチレベルメモリ素子を前記プログラムすることが、
切換えトランジスタを動作させることを備えている請求項12に記載の方法。 - ワード線およびビット線に電気的に接続されたコアセルがしきい値変化材料としてのカルコゲン化物材料を備えており、当該カルコゲン化物材料はプログラムされて記憶用の少なくとも4つのレベルが設定され、記憶用の前記レベルの各々は対応する少なくとも4つのしきい値電圧に関連づけられているコアセルを有するマルチレベルメモリ素子の各レベルを読出す方法であって、
マルチレベルメモリ素子のカルコゲン化物材料に読出し電圧を印加することと、
この電圧に関連する電流を検出して、前記レベルの各々を互いに判別することと、
マルチレベルメモリ素子に読出し電圧を印加する操作が、読出し電圧に付随する電流の状態がオン状態である際にはマルチレベルメモリ素子に異なる値の読出し電圧を印加することと、
を備えているマルチレベルメモリ素子の各レベルを読出す方法。 - マルチレベルメモリ素子のカルコゲン化物材料に別の電圧を印加することと、
この別の電圧に関連する電流を検出することと、
この別の電圧に関連する電流のレベルを判定することと、を更に備えている請求項17に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/465,012 US7180767B2 (en) | 2003-06-18 | 2003-06-18 | Multi-level memory device and methods for programming and reading the same |
US10/465,012 | 2003-06-18 |
Publications (2)
Publication Number | Publication Date |
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JP2005012186A JP2005012186A (ja) | 2005-01-13 |
JP5611499B2 true JP5611499B2 (ja) | 2014-10-22 |
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JP2004138733A Expired - Lifetime JP5611499B2 (ja) | 2003-06-18 | 2004-05-07 | マルチレベルメモリ素子およびこれをプログラムし読出す方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7180767B2 (ja) |
EP (1) | EP1489623B1 (ja) |
JP (1) | JP5611499B2 (ja) |
CN (1) | CN100578668C (ja) |
DE (1) | DE60324117D1 (ja) |
TW (1) | TWI223258B (ja) |
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KR100684908B1 (ko) * | 2006-01-09 | 2007-02-22 | 삼성전자주식회사 | 다수 저항 상태를 갖는 저항 메모리 요소, 저항 메모리 셀및 그 동작 방법 그리고 상기 저항 메모리 요소를 적용한데이터 처리 시스템 |
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2003
- 2003-06-18 US US10/465,012 patent/US7180767B2/en not_active Expired - Lifetime
- 2003-11-13 TW TW092131759A patent/TWI223258B/zh not_active IP Right Cessation
- 2003-11-19 EP EP03026610A patent/EP1489623B1/en not_active Expired - Lifetime
- 2003-11-19 DE DE60324117T patent/DE60324117D1/de not_active Expired - Lifetime
-
2004
- 2004-02-25 CN CN200410006005A patent/CN100578668C/zh not_active Expired - Lifetime
- 2004-05-07 JP JP2004138733A patent/JP5611499B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
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US7180767B2 (en) | 2007-02-20 |
CN100578668C (zh) | 2010-01-06 |
DE60324117D1 (de) | 2008-11-27 |
EP1489623B1 (en) | 2008-10-15 |
TW200501160A (en) | 2005-01-01 |
JP2005012186A (ja) | 2005-01-13 |
TWI223258B (en) | 2004-11-01 |
US20040257854A1 (en) | 2004-12-23 |
CN1574091A (zh) | 2005-02-02 |
EP1489623A1 (en) | 2004-12-22 |
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