JP5607760B2 - Cvd装置及びcvd方法 - Google Patents
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- 229910052799 carbon Inorganic materials 0.000 claims description 13
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- 238000005268 plasma chemical vapour deposition Methods 0.000 description 18
- 238000009826 distribution Methods 0.000 description 9
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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Description
図1乃至図3及び図5を参照して、本実施形態に係る真空処理装置を説明する。
本実施形態に係る真空処理装置は、真空排気されるロードロック室11とプロセス室21を有している。ロードロック室11及びプロセス室21はゲートバルブ31によって空間的に分離できる構成となっている。真空処理装置は、大気開放したロードロック室11内に基板2を投入し、真空に排気する。その後、真空排気されたロードロック室11と真空保管されたプロセス室21の間のゲートバルブ31を開放し、スライダー3によってプロセス室21に基板を搬送する。プロセス室21において、搬送された基板2に対して所定の処理が行われる。このような装置構成であることで、基板の交換のたびにプロセス室21を大気開放する必要がなくなる利点がある。なお、本実施形態に係る真空処理装置は、上述のようにロードロック室11とプロセス室21とを各1つずつ備えて構成されているが、処理工程によっては複数のプロセス室を備える構成であってもよい。
本実施形態では、一例として基板2に対してDLCの成膜を行う。基板2へのDLCの成膜においては、基板2が加熱された状態で成膜される事が望ましい。このため、基板2の加熱処理を成膜に先立って行う。まず、プロセス室21に不活性ガスを導入する。次に、電圧印加用シリンダー23を駆動することによって、ホルダ1と電圧印加手段を電気的に接触させる。電圧印加手段で印加される高電圧は、好ましくは、直流電圧(DC)もしくはパルスDCであり、基板2に電圧が印加されプロセス室21にプラズマが形成される。直流電圧は交流電圧に比べて一定の電圧が印加されるため、所望の膜特性を得やすい。また、直流電源により電圧を印加してプラズマ室21にプラズマを形成する場合、高周波電源を用いる必要が無い。このため、整合器や耐圧を考慮した設計が不要となるため、従来の装置に比べ安価に装置を作製可能である。このプラズマによるイオン衝撃により、基板2の温度が上昇する。このとき、磁場によって、プラズマが基板2近傍に閉じ込められているため、基板2を速やかに加熱することができる。
よって、本実施形態に係るプラズマCVD装置によれば、プロセス室21の内壁への膜の付着がシールド28により低減され、さらにシールド28への膜の付着も抑制することができるため、クリーニングを行う頻度が少なくなり、生産性の向上が望める。
本実施形態に係るプラズマCVD装置を用いて、基板2に対してDLC膜を成膜する場合の実施例を以下に示す。
cc/min)で導入した。該Arガスの導入により、プロセス室21内の圧力を20Paとした。
上述のように、第1の実施形態では、磁場形成手段29により、磁場を形成し、プラズマを基板2側に閉じ込めていた。このとき、磁場形成手段29により、プロセス室21に形成される磁場の強度を変化させることで、プラズマ密度の分布を変化させることが可能となる。これにより、基板2の温度及び成膜速度を制御することが可能となる。
Claims (13)
- 真空容器と、
前記真空容器内に磁場を形成するための磁場形成手段と、
前記真空容器内にプラズマを発生させるためのプラズマ発生手段と、
前記真空容器内に基板を保持するための基板ホルダと、
前記真空容器内において前記基板ホルダに対向する位置に設けられたシールドと、
を備え、
前記真空容器の内壁と前記シールドとの間に前記磁場形成手段が配置されており、
前記シールドは接地されており、
前記プラズマ発生手段が、前記基板ホルダ内に設けられる電極と、前記電極に電圧を印加する電源とを有する
ことを特徴とするCVD装置。 - 前記電源は前記電極に直流電圧を印加する直流電源であることを特徴とする請求項1に記載のCVD装置。
- 前記磁場形成手段を、前記磁場形成手段と前記基板ホルダとの間の空間の体積が増減する方向に移動させる移動手段を有することを特徴とする請求項1または2に記載のCVD装置。
- 前記磁場形成手段と前記シールドの間に放熱シートが設けられていることを特徴とする請求項1に記載のCVD装置。
- 前記プラズマは炭化水素ガスのプラズマであり、前記炭化水素ガスのプラズマにより前記基板上にカーボン膜が成膜されることを特徴とする請求項1に記載のCVD装置。
- 真空容器と、
前記真空容器内に磁場を形成するための磁場形成手段と、
内部に電極を有し、前記真空容器内に基板を保持するための基板ホルダと、
前記電極に前記真空容器内にプラズマを発生させるための電圧を印加する電源と、
前記真空容器内において前記基板ホルダに対向する位置に設けられたシールドと、
を備え、
前記真空容器の内壁と前記シールドとの間に前記磁場形成手段が配置されており、
前記シールドは接地されており、
前記基板ホルダと対向する側に前記電源に接続された電極が設けられていない
ことを特徴とするCVD装置。 - 前記電源は前記電極に直流電圧を印加する直流電源であることを特徴とする請求項8に記載のCVD装置。
- 基板を保持している基板ホルダと、磁場を形成している磁場形成手段と、前記基板ホルダに対向する位置に設けられ接地されているシールドと、を内部に有する真空容器であって、前記磁場形成手段が前記真空容器の内壁と前記シールドとの間に配置されている真空容器において、前記基板上に成膜処理を行うCVD方法であって、
前記磁場形成手段と前記基板ホルダとの間の空間に原料ガスを導入するステップと、
前記基板ホルダに電圧を印加させることで前記原料ガスのプラズマを形成するステップと、
前記原料ガスのプラズマにより前記基板上に成膜を行うステップと、
を備えるCVD方法。 - 前記原料ガスを導入するステップの前に、
前記磁場形成手段と前記基板ホルダとの間の前記空間に不活性ガスを導入するステップと、
前記基板ホルダに電圧を印加させることで前記不活性ガスのプラズマを形成するステップと、
前記不活性ガスのプラズマにより前記基板の加熱を行うステップと、
をさらに備える請求項10に記載のCVD方法。 - 前記電圧は直流電圧であることを特徴とする請求項10に記載のCVD方法。
- 前記原料ガスのプラズマは前記磁場によって前記基板近傍に閉じ込められることを特徴とする請求項10に記載のCVD方法。
- 前記磁場形成手段を、前記磁場形成手段と前記基板ホルダとの間の前記空間の体積が増減するように移動させることによって、前記磁場を変化させることを特徴とする請求項10に記載のCVD方法。
- 前記原料ガスは炭化水素ガスであり、前記炭化水素ガスのプラズマにより前記基板上にカーボン膜が成膜されることを特徴とする請求項10に記載のCVD方法。
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JP5720624B2 (ja) * | 2012-05-14 | 2015-05-20 | トヨタ自動車株式会社 | 成膜装置 |
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JPWO2012090421A1 (ja) | 2014-06-05 |
US20130269607A1 (en) | 2013-10-17 |
WO2012090420A1 (ja) | 2012-07-05 |
JPWO2012090420A1 (ja) | 2014-06-05 |
US20130264194A1 (en) | 2013-10-10 |
JP5612707B2 (ja) | 2014-10-22 |
JPWO2012090484A1 (ja) | 2014-06-05 |
US20130273263A1 (en) | 2013-10-17 |
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WO2012090484A1 (ja) | 2012-07-05 |
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