JP5605169B2 - 保護膜および該保護膜を備えた磁気記録媒体 - Google Patents
保護膜および該保護膜を備えた磁気記録媒体 Download PDFInfo
- Publication number
- JP5605169B2 JP5605169B2 JP2010246358A JP2010246358A JP5605169B2 JP 5605169 B2 JP5605169 B2 JP 5605169B2 JP 2010246358 A JP2010246358 A JP 2010246358A JP 2010246358 A JP2010246358 A JP 2010246358A JP 5605169 B2 JP5605169 B2 JP 5605169B2
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- film
- nitrogen
- fluorine
- magnetic recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000001681 protective effect Effects 0.000 title claims description 111
- 230000005291 magnetic effect Effects 0.000 title claims description 59
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 81
- 239000007789 gas Substances 0.000 claims description 47
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 46
- 229910052731 fluorine Inorganic materials 0.000 claims description 46
- 239000011737 fluorine Substances 0.000 claims description 46
- 230000001050 lubricating effect Effects 0.000 claims description 37
- 229910052757 nitrogen Inorganic materials 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 191
- 239000010410 layer Substances 0.000 description 42
- 230000007797 corrosion Effects 0.000 description 19
- 238000005260 corrosion Methods 0.000 description 19
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 15
- 238000009832 plasma treatment Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 12
- 238000010828 elution Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 6
- 239000005977 Ethylene Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 5
- 239000010687 lubricating oil Substances 0.000 description 5
- 239000010702 perfluoropolyether Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 238000003682 fluorination reaction Methods 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000004876 x-ray fluorescence Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910003321 CoFe Inorganic materials 0.000 description 1
- 229910019233 CoFeNi Inorganic materials 0.000 description 1
- 229910002441 CoNi Inorganic materials 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 description 1
- UCNNJGDEJXIUCC-UHFFFAOYSA-L hydroxy(oxo)iron;iron Chemical compound [Fe].O[Fe]=O.O[Fe]=O UCNNJGDEJXIUCC-UHFFFAOYSA-L 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000007885 magnetic separation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical compound C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 description 1
- 239000013080 microcrystalline material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910000702 sendust Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/72—Protective coatings, e.g. anti-static or antifriction
- G11B5/725—Protective coatings, e.g. anti-static or antifriction containing a lubricant, e.g. organic compounds
- G11B5/7253—Fluorocarbon lubricant
- G11B5/7257—Perfluoropolyether lubricant
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/72—Protective coatings, e.g. anti-static or antifriction
- G11B5/726—Two or more protective coatings
- G11B5/7262—Inorganic protective coating
- G11B5/7264—Inorganic carbon protective coating, e.g. graphite, diamond like carbon or doped carbon
- G11B5/7266—Inorganic carbon protective coating, e.g. graphite, diamond like carbon or doped carbon comprising a lubricant over the inorganic carbon coating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/72—Protective coatings, e.g. anti-static or antifriction
- G11B5/726—Two or more protective coatings
- G11B5/7262—Inorganic protective coating
- G11B5/7264—Inorganic carbon protective coating, e.g. graphite, diamond like carbon or doped carbon
- G11B5/7268—Inorganic carbon protective coating, e.g. graphite, diamond like carbon or doped carbon comprising elemental nitrogen in the inorganic carbon coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Description
最初に、直径95mm、厚さ1.75mmのアルミニウム基体上に、下地層、中間層、および磁気記録層を順次積層して被成膜基板を形成した。下地層は、CoZrNbから形成されており、膜厚は40nmであった。中間層は、Ruから形成されており、膜厚は15nmであった。磁気記録層は、CoCrPt−SiO2から形成されており、膜厚は15nmであった。
実施例1と同様にして膜厚2.2nmの保護膜を形成した。DLC膜の表面の窒化処理およびフッ化処理も実施例1と同じとした。この保護膜の上に、パーフルオロポリエーテルを主体とする液体潤滑剤をディップ法の引き抜き速度を調整して塗布し、膜厚0.8nmの潤滑膜と、膜厚0.7nmの潤滑膜を形成した。
実施例1と同様の方法により、成膜時間を調整し、膜厚2.0nmのDLC膜と、膜厚1.8nmのDLC膜を形成した。DLC膜の表面の窒化処理およびフッ化処理も実施例1と同じとした。フッ素の添加量は10at.%であり、窒素の添加量は10at.%であった。
実施例1と同様の方法により、テトラフルオロメタンガス流量を0sccm、窒素ガス流量を50sccmとしてサンプルを作製した。DLC膜の膜厚は2.2nm、潤滑膜の膜厚は0.9nmであった。
比較例1と同様にして形成した膜厚2.2nmの保護膜の上に、パーフルオロポリエーテルを主体とする液体潤滑剤をディップ法の引き抜き速度を調整して塗布し、膜厚0.8nmの潤滑膜と、膜厚0.7nmの潤滑膜を形成した。
比較例1と同様の方法により、成膜時間を調整し、膜厚2.0nmのDLC膜と、膜厚1.8nmのDLC膜を形成した。窒素の添加量は13at.%であった。
潤滑膜の膜厚を1.2nmとしたことを除いて、比較例1の手順を繰り返してサンプルを作製した。保護膜の膜厚は、2.2nmであった。
DLC膜の膜厚を2.5nmとしたことを除いて、比較例1の手順を繰り返してサンプルを作製した。潤滑膜の膜厚は、0.9nmであった。窒素の添加量は13at.%であった。
実施例1と同様の方法により、窒素ガス流量を0sccm、テトラフルオロメタンガス流量を40sccm、処理時間を1.0sとしてDLC膜の表面にフッ化処理のみ施したサンプルを作製した。DLC膜の膜厚は2.2nm、潤滑膜の膜厚は0.9nmである。フッ素添加量は13at.%であった。
潤滑膜の膜厚を1.2nmとしたことを除いて、実施例1の手順を繰り返してサンプルを作製した。保護膜の膜厚は、2.2nmであった。
DLC膜の膜厚を2.5nmとしたことを除いて、実施例1の手順を繰り返してサンプルを作製した。潤滑膜の膜厚は、0.9nmであった。フッ素の添加量は10at.%であり、窒素の添加量は10at.%であった。
Claims (6)
- 磁気記録媒体のための保護膜であって、該保護膜がフッ素と窒素とを含んでおり、
該保護膜が、非晶質炭素から形成されており、
該フッ素が、該保護膜の表面から0.5nmの深さまでの領域に存在し、かつ、
該窒素が、該保護膜の表面から0.5nmの深さまでの領域に存在することを特徴とする保護膜。 - 該保護膜の膜厚が、1.7nm以上2.3nm以下であることを特徴とする請求項1に記載の保護膜。
- フッ素の添加量および窒素の添加量が、いずれも5〜20at.%であることを特徴とする請求項1または2に記載の保護膜。
- 基体と、該基体上に位置する金属膜層と、該金属膜層上に位置する保護膜とを備えた磁気記録媒体であって、該保護膜が、請求項1から3のいずれかに記載の保護膜であることを特徴とする磁気記録媒体。
- 該保護膜上に潤滑膜が位置しており、該潤滑膜の膜厚が0.6nm以上1.0nm以下であることを特徴とする請求項4に記載の磁気記録媒体。
- 磁気記録媒体のための保護膜を製造する方法であって、基体と該基体上に形成される金属膜層とを含む積層体の上に該保護膜を形成する工程と、フッ素含有ガスおよび窒素含有ガス中で該保護膜をプラズマ処理する工程とを含み、
該保護膜が、非晶質炭素から形成されており、
該フッ素が、該保護膜の表面から0.5nmの深さまでの領域に存在し、かつ、
該窒素が、該保護膜の表面から0.5nmの深さまでの領域に存在することを特徴とする方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010246358A JP5605169B2 (ja) | 2010-11-02 | 2010-11-02 | 保護膜および該保護膜を備えた磁気記録媒体 |
MYPI2013000393A MY160350A (en) | 2010-11-02 | 2011-02-23 | Protective film and magnetic recording medium provided with the protective film |
SG2013008990A SG187734A1 (en) | 2010-11-02 | 2011-02-23 | Protective film, and magnetic recording medium having protective film |
CN201180039194.0A CN103069485B (zh) | 2010-11-02 | 2011-02-23 | 保护性膜、具有该保护性膜的磁性记录介质、以及保护性膜的制备方法 |
PCT/JP2011/001045 WO2012060023A1 (ja) | 2010-11-02 | 2011-02-23 | 保護膜および該保護膜を備えた磁気記録媒体、保護膜を製造する方法 |
US13/816,257 US8980448B2 (en) | 2010-11-02 | 2011-02-23 | Magnetic recording medium including an amorphous carbon protective film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010246358A JP5605169B2 (ja) | 2010-11-02 | 2010-11-02 | 保護膜および該保護膜を備えた磁気記録媒体 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012099180A JP2012099180A (ja) | 2012-05-24 |
JP5605169B2 true JP5605169B2 (ja) | 2014-10-15 |
Family
ID=46024152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010246358A Active JP5605169B2 (ja) | 2010-11-02 | 2010-11-02 | 保護膜および該保護膜を備えた磁気記録媒体 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8980448B2 (ja) |
JP (1) | JP5605169B2 (ja) |
CN (1) | CN103069485B (ja) |
MY (1) | MY160350A (ja) |
SG (1) | SG187734A1 (ja) |
WO (1) | WO2012060023A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014002806A (ja) * | 2012-06-15 | 2014-01-09 | Fuji Electric Co Ltd | 磁気記録媒体およびその製造方法 |
JP6083154B2 (ja) * | 2012-08-30 | 2017-02-22 | 富士電機株式会社 | 磁気記録媒体 |
JP6186500B2 (ja) * | 2013-11-14 | 2017-08-23 | フジ エレクトリック (マレーシア) エスディーエヌ ビーエイチディー | カーボン系保護膜の製造方法 |
CN106796816B (zh) * | 2014-09-26 | 2021-12-14 | 英特尔公司 | 在psttm mtj结构中的磁性扩散阻挡层和过滤层 |
US11183390B2 (en) * | 2017-08-15 | 2021-11-23 | Nokomis, Inc. | Method of enhancing a DLC coated surface for enhanced multipaction resistance |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6378328A (ja) * | 1986-09-19 | 1988-04-08 | Matsushita Electric Ind Co Ltd | 磁気記録媒体 |
JPH06301969A (ja) | 1993-02-22 | 1994-10-28 | Hitachi Ltd | 磁気記録媒体並びにその製造方法及び磁気ディスク装置 |
US5773124A (en) | 1993-02-22 | 1998-06-30 | Hitachi, Ltd. | Magnetic recording medium comprising a protective layer having specified electrical resistivity and density |
JP3687117B2 (ja) | 1994-10-31 | 2005-08-24 | ソニー株式会社 | 磁気記録媒体及びその製造方法 |
JPH0944844A (ja) * | 1995-07-27 | 1997-02-14 | Hitachi Ltd | 磁気記録媒体の製造方法 |
JP3606416B2 (ja) * | 1996-12-27 | 2005-01-05 | ソニー株式会社 | 磁気記録媒体の製造方法及びその製造装置 |
JP2001195723A (ja) * | 2000-01-14 | 2001-07-19 | Matsushita Electric Ind Co Ltd | 磁気記録媒体および磁気記録媒体の製造方法 |
US6764757B1 (en) * | 2000-07-10 | 2004-07-20 | Seagate Technology Llc | Recording medium with a lubricating layer having increased thermal stability |
US20070127158A1 (en) * | 2005-12-05 | 2007-06-07 | Imation Corp. | Magnetic recording medium with diamond-like carbon lubricant |
JP2007265586A (ja) * | 2006-03-30 | 2007-10-11 | Hoya Corp | 磁気ディスク及びその製造方法 |
JP2009211765A (ja) * | 2008-03-04 | 2009-09-17 | Hoya Corp | 磁気ディスク |
JP2010020832A (ja) * | 2008-07-10 | 2010-01-28 | Panasonic Corp | 磁気記録媒体 |
JP5093686B2 (ja) | 2008-08-27 | 2012-12-12 | 富士電機株式会社 | 磁気記録媒体用保護膜の形成方法 |
-
2010
- 2010-11-02 JP JP2010246358A patent/JP5605169B2/ja active Active
-
2011
- 2011-02-23 WO PCT/JP2011/001045 patent/WO2012060023A1/ja active Application Filing
- 2011-02-23 MY MYPI2013000393A patent/MY160350A/en unknown
- 2011-02-23 CN CN201180039194.0A patent/CN103069485B/zh not_active Expired - Fee Related
- 2011-02-23 SG SG2013008990A patent/SG187734A1/en unknown
- 2011-02-23 US US13/816,257 patent/US8980448B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20130196177A1 (en) | 2013-08-01 |
US8980448B2 (en) | 2015-03-17 |
SG187734A1 (en) | 2013-03-28 |
MY160350A (en) | 2017-02-28 |
JP2012099180A (ja) | 2012-05-24 |
WO2012060023A1 (ja) | 2012-05-10 |
CN103069485A (zh) | 2013-04-24 |
CN103069485B (zh) | 2016-09-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5093686B2 (ja) | 磁気記録媒体用保護膜の形成方法 | |
US8888966B2 (en) | Protective film mainly composed of a tetrahedral amorphous carbon film and a magnetic recording medium having the protective film | |
JP5605169B2 (ja) | 保護膜および該保護膜を備えた磁気記録媒体 | |
JP4839723B2 (ja) | 保護膜形成方法およびその保護膜を備えた磁気記録媒体 | |
US20130337194A1 (en) | Covalently bound monolayer for a protective carbon overcoat | |
Akita et al. | Comparison of deposition methods for ultra thin DLC overcoat film for MR head | |
JP5811672B2 (ja) | 垂直磁気記録媒体およびその製造方法 | |
US8334028B2 (en) | Method of forming a protective film | |
JP6186500B2 (ja) | カーボン系保護膜の製造方法 | |
JP5808511B2 (ja) | 磁気記録媒体及びその保護膜の製造方法 | |
US20080318085A1 (en) | Method of forming a protective film and a magnetic recording medium having a protective film | |
JP6089740B2 (ja) | 磁気記録媒体の記録再生方法 | |
JP4639477B2 (ja) | 磁気記録媒体の製造方法 | |
JP5720311B2 (ja) | Dlc膜の製造方法および製造装置 | |
JP2019508834A (ja) | 磁気記録媒体およびその製造方法 | |
JP2010092563A (ja) | 磁気ディスクの製造方法及び磁気ディスク | |
JP2003346322A (ja) | 磁気記録媒体及びその製造方法 | |
JP2010092564A (ja) | 磁気ディスクの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130514 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140212 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140327 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140729 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140811 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5605169 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |