JP5592074B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5592074B2
JP5592074B2 JP2009027598A JP2009027598A JP5592074B2 JP 5592074 B2 JP5592074 B2 JP 5592074B2 JP 2009027598 A JP2009027598 A JP 2009027598A JP 2009027598 A JP2009027598 A JP 2009027598A JP 5592074 B2 JP5592074 B2 JP 5592074B2
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JP
Japan
Prior art keywords
divided
electrode
capacitor
film
capacitors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009027598A
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English (en)
Japanese (ja)
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JP2010183021A (ja
JP2010183021A5 (https=
Inventor
正之 冨留宮
康隆 中柴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009027598A priority Critical patent/JP5592074B2/ja
Priority to US12/704,608 priority patent/US8525269B2/en
Publication of JP2010183021A publication Critical patent/JP2010183021A/ja
Publication of JP2010183021A5 publication Critical patent/JP2010183021A5/ja
Application granted granted Critical
Publication of JP5592074B2 publication Critical patent/JP5592074B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2009027598A 2009-02-09 2009-02-09 半導体装置 Expired - Fee Related JP5592074B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009027598A JP5592074B2 (ja) 2009-02-09 2009-02-09 半導体装置
US12/704,608 US8525269B2 (en) 2009-02-09 2010-02-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009027598A JP5592074B2 (ja) 2009-02-09 2009-02-09 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014139422A Division JP5863892B2 (ja) 2014-07-07 2014-07-07 半導体装置

Publications (3)

Publication Number Publication Date
JP2010183021A JP2010183021A (ja) 2010-08-19
JP2010183021A5 JP2010183021A5 (https=) 2012-03-22
JP5592074B2 true JP5592074B2 (ja) 2014-09-17

Family

ID=42539719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009027598A Expired - Fee Related JP5592074B2 (ja) 2009-02-09 2009-02-09 半導体装置

Country Status (2)

Country Link
US (1) US8525269B2 (https=)
JP (1) JP5592074B2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5621357B2 (ja) * 2010-06-30 2014-11-12 富士通セミコンダクター株式会社 半導体装置
US10134729B2 (en) * 2013-09-27 2018-11-20 Taiwan Semiconductor Manufacturing Co., Ltd. Vertical noise reduction in 3D stacked semiconductor devices
US9524964B2 (en) * 2014-08-14 2016-12-20 Xilinx, Inc. Capacitor structure in an integrated circuit
JP6318975B2 (ja) * 2014-08-20 2018-05-09 株式会社デンソー 半導体装置
JP2017175146A (ja) * 2017-05-02 2017-09-28 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000241762A (ja) 1999-02-24 2000-09-08 Tokin Corp 光アイソレータ
JP3522144B2 (ja) 1999-02-25 2004-04-26 富士通株式会社 容量回路および半導体集積回路装置
JP4220484B2 (ja) * 2005-03-15 2009-02-04 日本バーブラウン株式会社 集積回路抵抗体アレイ
JP2007049309A (ja) 2005-08-08 2007-02-22 Nec Electronics Corp スイッチ回路
US7932993B2 (en) * 2006-09-16 2011-04-26 Wenhui Mei Divided sub-image array scanning and exposing system

Also Published As

Publication number Publication date
US20100200924A1 (en) 2010-08-12
JP2010183021A (ja) 2010-08-19
US8525269B2 (en) 2013-09-03

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